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1. 发明授权

US5429070A High density plasma deposition and etching apparatus 失效
标题翻译：高密度等离子体沉积和蚀刻装置
公开(公告)号：US5429070A
公开(公告)日：1995-07-04
申请号：US979574
申请日：1992-11-20
申请人： Gregor A. Campbell , Robert W. Conn , Dan Katz , N. William Parker , Alexis de Chambrier
发明人： Gregor A. Campbell , Robert W. Conn , Dan Katz , N. William Parker , Alexis de Chambrier
IPC分类号： C23C16/50 , C23C16/513 , H01J37/32 , H01L21/00
CPC分类号： H01J37/3244 , C23C16/513 , H01J37/321 , H01J37/3211 , H01J37/32688
摘要： Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.
摘要翻译：提供了等离子体沉积或蚀刻装置，其包括位于衬底处理室上方并且与衬底处理室轴向关系的等离子体源。等离子体源可以包括与含氟的等离子体一起使用的蓝宝石或氧化铝源管。围绕等离子体源的是内部磁性线圈和外部磁性线圈，其布置在与等离子体源和衬底处理室的轴线垂直的同一平面中。优选地，通过内部线圈提供第一电流，并且通过外部线圈提供沿与第一电流的方向相反的方向的第二电流。内部和外部线圈用一薄层导电材料包裹，以将线圈屏蔽由等离子体源产生的RF信号。结果是有利地在处理室中形成磁场，以实现非常均匀的处理，特别是当使用气体馈送线的独特的菱形图案时，其中金刚石布置成在四个位置处大致相切于外围的工件在设备中被处理。

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