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1. 发明申请

US20090181493A1 VERTICAL ORGANIC FET AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：垂直有机FET及其制造方法
公开(公告)号：US20090181493A1
公开(公告)日：2009-07-16
申请号：US12393531
申请日：2009-02-26
申请人： Akihito MIYAMOTO
发明人： Akihito MIYAMOTO
IPC分类号： H01L51/30
CPC分类号： H01L51/0508 , H01L51/0078 , H01L51/057
摘要： The present invention provides a vertical organic FET with increased carrier mobility and suppressed molecular orientation of an active layer composed of an organic semiconductor. The present invention relates to a vertical organic FET having a structure in which at least a source electrode layer, a drain electrode layer, a gate electrode, and an active layer are provided on a substrate, and the source electrode layer, the active layer, and the drain electrode layer are laminated in that order, wherein (1) the source electrode layer and the drain electrode layer are disposed substantially parallel to the substrate plane, (2) the source electrode layer and the drain electrode layer are electroconductive members, (3) the active layer is substantially constituted by a phthalocyanine compound that has a tetravalent or hexavalent element as its central atom and in which ligands X1 and X2 coordinate up and down, respectively, from the molecular plane, and (4) the compound is layered such that the molecular plane of each molecule of the compound is in a substantially parallel state with respect to the source electrode layer and/or the drain electrode layer.
摘要翻译：本发明提供了具有增加的载流子迁移率和抑制由有机半导体构成的有源层的分子取向的垂直有机FET。本发明涉及一种垂直有机FET，其具有在基板上至少设置有源极电极层，漏极电极层，栅电极和有源层的构造，源电极层，有源层，和漏极电极层按顺序层叠，其中（1）源电极层和漏极电极层基本平行于基板平面设置，（2）源电极层和漏电极层是导电构件（ 3）活性层基本上由具有四价或六价元素作为其中心原子并且其中配体X1和X2分别从分子平面上下配位的酞菁化合物构成，和（4）化合物层叠使得化合物的每个分子的分子平面相对于源电极层和/或漏电极层处于基本上平行的状态。

2. 发明授权

US07394090B2 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07394090B2
公开(公告)日：2008-07-01
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

3. 发明申请

US20070210362A1 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20070210362A1
公开(公告)日：2007-09-13
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L27/11
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

4. 发明授权

US06316146B1 Carbon materials for negative electrode of secondary battery and manufacturing process 有权
标题翻译：二次电池负极碳材料及其制造工艺
公开(公告)号：US06316146B1
公开(公告)日：2001-11-13
申请号：US09227807
申请日：1999-01-11
申请人： Kazuhiro Watanabe , Norishige Nanai , Katsuhiro Nichogi , Akihito Miyamoto , Soji Tsuchiya
发明人： Kazuhiro Watanabe , Norishige Nanai , Katsuhiro Nichogi , Akihito Miyamoto , Soji Tsuchiya
IPC分类号： H01M458
CPC分类号： H01M4/583 , H01M4/133 , H01M4/366 , H01M10/0525
摘要： A carbon material for negative electrode of a secondary battery, in particular lithium-ion secondary battery, is prepared by pyrolysis in an inert gas atmosphere or in a vacuum of a composite resin obtained by dissolving pitch in a pitch-soluble resin such as a nobolac phenol resin as it is, or a resin solidified by curing treatment in a state in which the above composite resin is dispersed in a resin solidified by curing treatment or in an uncured resin having a phenol hydroxyl radical such as resol type phenol resin, followed by pulverization in an inert gas, and further heat treatment in an inert gas atmosphere or in a vacuum. Also, a negative electrode material with which irreversible capacity is small, initial discharge capacity is large, and capacity decrease due to cycles is small can be provided by pyrolyzing in an inert gas atmosphere or in a vacuum powder of a resin such as a resol type phenol resin the primary chain of which containing an aromatic compound, or pyrolyzing in an inert gas atmosphere or in a vacuum in a first step, followed by heat treatment in a vacuum in a second step. By employing these negative electrode materials, it is possible to achieve a higher capacity in lithium-ion secondary batteries.
摘要翻译：二次电池用负极碳材料，特别是锂离子二次电池，是通过在惰性气体气氛中或在通过将沥青溶解在树脂中的沥青溶解沥青而得到的复合树脂的真空中进行热解而制备的或者在将上述复合树脂分散在通过固化处理固化的树脂中的固化处理固化的树脂中，或者在具有酚羟基的未固化树脂如甲阶酚醛树脂型酚醛树脂中固化的树脂，其次是在惰性气体中粉碎，并在惰性气体气氛或真空中进一步热处理。此外，可以通过在惰性气体气氛中或在例如甲阶型树脂的真空粉末中热解而提供不可逆容量小的初始放电容量大，循环容量降低小的负极材料酚醛树脂，其主链含有芳族化合物，或在惰性气体气氛中或在第一步骤的真空中热解，然后在第二步骤中在真空中进行热处理。通过使用这些负极材料，可以实现锂离子二次电池的高容量化。

5. 发明授权

US08916863B2 Organic thin-film transistor and method of manufacturing organic thin-film transistor 有权
标题翻译：有机薄膜晶体管及制造有机薄膜晶体管的方法
公开(公告)号：US08916863B2
公开(公告)日：2014-12-23
申请号：US14006776
申请日：2012-09-05
申请人： Takaaki Ukeda , Akihito Miyamoto
发明人： Takaaki Ukeda , Akihito Miyamoto
IPC分类号： H01L51/10 , H01L51/40 , H01L51/05
CPC分类号： H01L51/0545 , H01L51/0558 , H01L51/102
摘要： A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.
摘要翻译：晶体管制造方法包括：在基板上形成栅电极; 在栅电极上形成栅极绝缘体; 在栅极绝缘体上形成源极和漏极; 在源极和漏极上形成牺牲层; 在所述牺牲层上形成隔壁层; 通过图案化分隔壁层以部分地暴露牺牲层来形成开口; 去除牺牲层以暴露源极和漏极; 以及形成有机半导体层以覆盖源电极和漏电极以及栅极绝缘体，其中源电极和漏电极占开口表面积的50％或更多，源电极和漏电极间隔较小比晶体的平均颗粒直径至少部分地位于源极或漏极之上。

6. 发明申请

US20140048883A1 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20140048883A1
公开(公告)日：2014-02-20
申请号：US14113971
申请日：2011-10-20
申请人： Takaaki Ukeda , Akihito Miyamoto
发明人： Takaaki Ukeda , Akihito Miyamoto
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/786 , H01L27/1255 , H01L27/283 , H01L29/6675 , H01L29/66772 , H01L51/0078 , H01L51/0529
摘要： The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.
摘要翻译：根据本发明的有机薄膜晶体管包括：第一区域中的衬底上的栅极电极线：第二区域中的第一信号线层; 覆盖所述栅电极线和所述第一信号线层的栅极绝缘膜; 栅极绝缘膜上的堤层; 在第一信号线上的堤层上的第二信号线层; 漏极电极和源电极线，其位于所述堤层和所述第一区域中的所述堤层之间的至少一个开口中; 至少位于开口中并由堤层，漏电极和源极线排列的半导体层; 以及覆盖半导体层的保护膜。

7. 发明授权

US09018704B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09018704B2
公开(公告)日：2015-04-28
申请号：US14113971
申请日：2011-10-20
申请人： Takaaki Ukeda , Akihito Miyamoto
发明人： Takaaki Ukeda , Akihito Miyamoto
IPC分类号： H01L27/32 , H01L29/786 , H01L51/05 , H01L27/28 , H01L29/66 , H01L27/12 , H01L51/00
CPC分类号： H01L29/786 , H01L27/1255 , H01L27/283 , H01L29/6675 , H01L29/66772 , H01L51/0078 , H01L51/0529
摘要： The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.
摘要翻译：根据本发明的有机薄膜晶体管包括：第一区域中的衬底上的栅极电极线：第二区域中的第一信号线层; 覆盖所述栅电极线和所述第一信号线层的栅极绝缘膜; 栅极绝缘膜上的堤层; 在第一信号线上的堤层上的第二信号线层; 漏极电极和源电极线，其位于所述堤层和所述第一区域中的所述堤层之间的至少一个开口中; 至少位于开口中并由堤层，漏电极和源极线排列的半导体层; 以及覆盖半导体层的保护膜。

8. 发明申请

US20060078799A1 Nonaqueous secondary battery, constituent elements of battery, and materials thereof 审中-公开
标题翻译：非水二次电池，电池的构成要素及其材料
公开(公告)号：US20060078799A1
公开(公告)日：2006-04-13
申请号：US11281088
申请日：2005-11-17
申请人： Kazuhiro Watanabe , Katsuhiro Nichogi , Norishige Nanai , Akihito Miyamoto , Soji Tsuchiya
发明人： Kazuhiro Watanabe , Katsuhiro Nichogi , Norishige Nanai , Akihito Miyamoto , Soji Tsuchiya
IPC分类号： C01B31/04 , H01M4/66
CPC分类号： H01M10/0525 , C01B32/20 , C01G31/00 , C04B35/495 , C04B2235/3203 , C04B2235/3239 , C04B2235/3256 , C04B2235/3281 , H01M4/0404 , H01M4/0414 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/136 , H01M4/1391 , H01M4/1393 , H01M4/1397 , H01M4/485 , H01M4/525 , H01M4/5825 , H01M4/587 , H01M4/663 , H01M10/052 , H01M10/054 , H01M10/0565 , H01M10/0568 , H01M2004/027 , H01M2300/0082 , H01M2300/0085 , Y02E60/122 , Y02T10/7011
摘要： To realize constituent elements for realizing a nonaqueous secondary battery having high energy density and high repeating stability, and a nonaqueous secondary battery using the same. To present also a lithium ion secondary battery of light weight and high energy density to be used in various electronic appliances and power source of electric vehicle or the like. By using vanadium oxide expressed as M2+xV4O11, where x is 0 or more to 1 or less, and M is a monovalent metal ion such as Cu and Li, as positive electrode, a nonaqueous secondary battery having high energy density and high repeating stability is obtained. Moreover, by using the carbon obtained by heating a cured resin by adding an aromatic compound of 2 to 10 rings to a high polymer before curing, as negative electrode, a nonaqueous secondary battery of high energy density is obtained. By composing an electrochemical element by using a gel or solid ion conductor having an iron containing an organic cationic structure including quaternary nitrogen or its derivative and different cations at least as coexistent ions, a nonaqueous secondary battery of high energy density is obtained. As the current collector of the battery, by using a graphite sheet obtained by baking a high polymer film, a lithium ion secondary battery of light weight, excellent cycle characteristics and high energy density is presented.
摘要翻译：实现用于实现高能量密度和高重复稳定性的非水二次电池的构成要素，以及使用该非水系二次电池的非水二次电池。还提出了用于电动车辆等的各种电子设备和动力源中的重量轻，能量密度高的锂离子二次电池。通过使用表示为M 2 + x V 4 O 11 N的氧化钒，其中x为0以上至1以下，M为可以得到Cu，Li等单价金属离子作为正极，能量密度高，重复稳定性高的非水系二次电池。此外，通过使用通过在固化前将高分子量的2〜10个环的芳香族化合物加成固化树脂而得到的碳作为负极，得到高能量密度的非水系二次电池。通过使用具有包含季氮或其衍生物的有机阳离子结构的铁的凝胶或固体离子导体和至少具有共存离子的不同阳离子组成电化学元件，获得了高能量密度的非水二次电池。作为电池的集电体，通过使用通过烘焙高分子膜得到的石墨片，提出了重量轻，循环特性优异，能量密度高的锂离子二次电池。

9. 发明授权

US06413486B2 Nonaqueous secondary battery, constituent elements of battery, and materials thereof 失效
标题翻译：非水二次电池，电池的构成要素及其材料
公开(公告)号：US06413486B2
公开(公告)日：2002-07-02
申请号：US09327070
申请日：1999-06-07
申请人： Kazuhiro Watanabe , Katsuhiro Nichogi , Norishige Nanai , Akihito Miyamoto , Soji Tsuchiya
发明人： Kazuhiro Watanabe , Katsuhiro Nichogi , Norishige Nanai , Akihito Miyamoto , Soji Tsuchiya
IPC分类号： C01B3102
CPC分类号： H01M4/131 , C01G31/00 , H01M4/485 , H01M4/587 , H01M4/663 , H01M10/0525 , H01M10/054 , H01M10/0565 , H01M10/0568 , H01M2004/027 , H01M2300/0082 , H01M2300/0085 , Y02E60/122 , Y02T10/7011
摘要： To realize constituent elements for realizing a nonaqueous secondary battery having high energy density and high repeating stability, and a nonaqueous secondary battery using the same. To present also a lithium ion secondary battery of light weight and high energy density to be used in various electronic appliances and power source of electric vehicle or the like. By using vanadium oxide expressed as M2+xV4O11, where x is 0 or more to 1 or less, and M is a monovalent metal ion such as Cu and Li, as positive electrode, a nonaqueous secondary battery having high energy density and high repeating stability is obtained. Moreover, by using the carbon obtained by heating a cured resin by adding an aromatic compound of 2 to 10 rings to a high polymer before curing, as negative electrode, a nonaqueous secondary battery of high energy density is obtained. By composing an electrochemical element by using a gel or solid ion conductor having an iron containing an organic cationic structure including quaternary nitrogen or its derivative and different cations at least as coexistent ions, a nonaqueous secondary battery of high energy density is obtained. As the current collector of the battery, by using a graphite sheet obtained by baking a high polymer film, a lithium ion secondary battery of light weight, excellent cycle characteristics and high energy density is presented.
摘要翻译：为了实现具有高能量密度和高重复稳定性的非水系二次电池的构成要素，以及使用该非水系二次电池的非水系二次电池。另外，还可以使用重量轻，能量密度高的锂离子二次电池，用于各种电子设备电动车辆的动力源等。通过使用表示为M2 + xV4O11的氧化钒，其中x为0以上至1以下，M为Cu，Li等一价金属离子作为正极，作为非水系获得具有高能量密度和高重复稳定性的二次电池。此外，通过使用通过在固化前将高分子量的2〜10个环的芳香族化合物加成固化树脂而得到的碳作为负极，得到高能量密度的非水系二次电池。通过使用具有包含季氮或其衍生物的有机阳离子结构的铁的凝胶或固体离子导体和至少具有共存离子的不同阳离子构成电化学元件，获得高能量密度的非水二次电池。作为电流电池的集电体，通过使用通过烘焙高分子膜获得的石墨片，提供重量轻，优异的循环特性和高能量密度的锂离子二次电池。

10. 发明授权

US5717271A Brush holder device and method of molding same 失效
标题翻译：刷架装置及其成型方法
公开(公告)号：US5717271A
公开(公告)日：1998-02-10
申请号：US570669
申请日：1995-12-11
申请人： Susumu Aoki , Hideki Furuuchi , Akihito Miyamoto
发明人： Susumu Aoki , Hideki Furuuchi , Akihito Miyamoto
IPC分类号： H01R39/38 , H01R39/40 , H01R43/18 , H01R43/24 , H02K5/14 , H02K5/22 , H02K15/14 , H02K13/00
CPC分类号： H01R39/40 , H01R39/38 , H02K5/148 , H01R43/18 , H01R43/24 , H02K15/14 , H02K5/225
摘要： Deformation absorbing grooves 16a are recessedly provided on the inner surfaces of both side walls 15a of a main body 15 of a brush holder made of resin in the sliding direction of a brush 44, and brush holding surface portions 16b holding both end edge portions of the outer surfaces of the brush are formed at edge portions of the grooves 16a on the inner surfaces of the side walls 15a. A pair of first reinforcing ribs 16c are projectingly provided at closing end sides of cutaway portions 18 and 19 on the outer surfaces of the both side walls 15a in the sliding direction of the brush, a pair of second reinforcing ribs 16d are projectingly provided at both top sides of the outer surface of a top side wall 15d for closing an end surface across the tops of the both side walls in the sliding direction of the brush, and an end portion 46a on the reaction side of a torsion spring 46 is engaged with an engageable portion 21A projectingly provided on the first reinforcing rib 16c.
摘要翻译：变形吸收槽16a凹陷地设置在电刷44的滑动方向上由树脂制的电刷架的主体15的两个侧壁15a的内表面上，以及保持两个端部边缘部分的刷保持表面部分16b 刷子的外表面形成在侧壁15a的内表面上的凹槽16a的边缘部分。一对第一加强筋16c在刷子的滑动方向上突出地设置在两侧壁15a的外表面上的切口部分18和19的闭合端侧，一对第二加强肋16d突出地设置在两个在顶侧壁15d的外表面的顶侧，用于在刷子的滑动方向上跨过两个侧壁的顶部封闭端面，并且扭簧46的反作用侧上的端部46a与突出地设置在第一加强筋16c上的可接合部分21A。

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