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1. 发明专利

AU2729201A Hot wire chemical vapor deposition method and apparatus using graphite hot rods 未知
公开(公告)号：AU2729201A
公开(公告)日：2002-07-01
申请号：AU2729201
申请日：2000-12-18
申请人： ARUN MADAN
发明人： MORRISON SCOTT , XI JIANPING
IPC分类号： C23C16/00 , C23C16/24

2. 发明专利

AU6803300A Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette 未知
公开(公告)号：AU6803300A
公开(公告)日：2001-01-22
申请号：AU6803300
申请日：2000-07-05
申请人： ARUN MADAN
发明人： MADAN ARUN , HENG JEFFREY OWEN
IPC分类号： C23C14/56 , C23C16/54 , C23C14/04 , C23C16/04

3. 发明授权

US4839312A Fluorinated precursors from which to fabricate amorphous semiconductor material 失效
标题翻译：用于制造非晶半导体材料的氟化前体
公开(公告)号：US4839312A
公开(公告)日：1989-06-13
申请号：US23756
申请日：1987-03-09
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： A method producing a solid semiconductor film characterized by a low density of defect states in the energy gap thereof by the glow discharge deposition of a precursor gaseous mixture which includes a gas chosen from the group consisting essentially of hydrogen, fluorine, or combinations thereof and a compound chosen from the group consisting essentially of SiH.sub.3 F, SiH.sub.2 F.sub.2, SiHF.sub.3, SiHCl.sub.3, SiH.sub.2 Cl.sub.2, SiH.sub.3 Cl, SiCl.sub.3 F, SiCl.sub.2 F.sub.2, SiClF.sub.3, or combinations thereof.
摘要翻译：一种制造固体半导体膜的方法，其特征在于通过前驱体气体混合物的辉光放电沉积在其能隙中具有低密度的缺陷状态，其包括选自基本上由氢，氟或其组合组成的组的气体，以及选自基本上由SiH 3 F，SiH 2 F 2，SiHF 3，SiHCl 3，SiH 2 Cl 2，SiH 3 Cl，SiCl 3 F，SiCl 2 F 2，SiClF 3或其组合组成的组的化合物。

4. 发明授权

US4703336A Photodetection and current control devices 失效
标题翻译：光电检测和电流控制装置
公开(公告)号：US4703336A
公开(公告)日：1987-10-27
申请号：US853264
申请日：1986-04-17
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L27/14
CPC分类号： H01L29/04 , H01L21/02425 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/20 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photodetection device and a current control device, both including means responsive to the intensity of incident radiation for providing an output signal corresponding thereto. The responsive means includes a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations and an energy gap. At least one compensating element is introduced into that matrix for reducing the density of states in the energy gap thereof.
摘要翻译：光检测装置和电流控制装置都包括响应入射辐射强度的装置，用于提供对应于其的输出信号。响应装置包括薄的半导体膜，其包括具有电子构造和能隙的固体非晶硅或无定形锗主体基质。至少一个补偿元件被引入到该矩阵中以减小其能隙中的状态密度。

5. 发明授权

US4398054A Compensated amorphous silicon solar cell incorporating an insulating layer 失效
标题翻译：补偿绝缘层的非晶硅太阳能电池
公开(公告)号：US4398054A
公开(公告)日：1983-08-09
申请号：US367812
申请日：1982-04-12
申请人： Arun Madan
发明人： Arun Madan
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06 , H01L31/18
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S438/904 , Y10S438/919
摘要： A P-I-N type compensated amorphous silicon solar cell which incorporates an insulating layer adjacent to the compensated intrinsic amorphous silicon layer.
摘要翻译：一种P-I-N型补偿非晶硅太阳能电池，其包含与补偿的本征非晶硅层相邻的绝缘层。

6. 发明申请

US20050150542A1 Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology 审中-公开
标题翻译：使用薄膜硅技术稳定三端和四端太阳能电池和太阳能电池板
公开(公告)号：US20050150542A1
公开(公告)日：2005-07-14
申请号：US10905545
申请日：2005-01-10
申请人： Arun Madan
发明人： Arun Madan
IPC分类号： H01L25/04 , H01L31/00
CPC分类号： H01L31/043 , Y02E10/50
摘要： Three-terminal (3-T) and four-terminal (4-T) thin-film, Si-based, multi-junction solar cells, and solar cell panels wherein multiple solar cells are electrically connected in series, in which current-matching-constraints are released from the two stacked cells that make up each solar cell, wherein the two stacked cells (i.e. a first n-i-p a-Si:H cell considered in the direction of light penetration, and a second stable, low band gap material p-i-n cell, such as a p-i-n nc-Si:H cell considered in the direction of light penetration) are carried by a substrate having a top-disposed and ultra-thin (about 1000 A thick) a-Si:H solar cell where instability is not an issue, the invention having the potential of attaining η>16%. In an embodiment the solar cells and panels are manufactured using a cluster tool manufacturing system wherein a robotic arm transports a reel-to-reel substrate-cassette to selected deposition chambers, the substrate-cassette containing a flexible substrate such as a stainless steel foil or a plastic web. In another embodiment a rigid substrate such as glass or rigid stainless steel is used.
摘要翻译：三端（3T）和四端（4-T）薄膜，Si基，多结太阳能电池和太阳能电池板，其中多个太阳能电池串联电连接，其中电流匹配约束从构成每个太阳能电池的两个堆叠的电池释放，其中两个堆叠的电池（即，在光穿透的方向上考虑的第一压区a-Si：H电池和第二稳定的低带隙材料销电池，例如在光穿透方向上考虑的pin nc-Si：H电池）由具有顶部设置和超薄（约1000A厚）a-Si：H太阳能电池的基板承载，其中不稳定性为不是一个问题，本发明具有达到eta> 16％的潜力。在一个实施例中，使用群集工具制造系统制造太阳能电池和面板，其中机器人手臂将卷对盘衬底盒传送到选定的沉积室，衬底盒包含柔性衬底，例如不锈钢箔或一个塑料网。在另一个实施例中，使用诸如玻璃或刚性不锈钢的刚性基底。

7. 发明授权

US5252140A Solar cell substrate and process for its production 失效
标题翻译：太阳能电池基板及其生产工艺
公开(公告)号：US5252140A
公开(公告)日：1993-10-12
申请号：US477909
申请日：1990-03-29
申请人： Shigeyoshi Kobayashi , Susumu Yaba , Shinya Kikugawa , Stephen Muhl , Arun Madan
发明人： Shigeyoshi Kobayashi , Susumu Yaba , Shinya Kikugawa , Stephen Muhl , Arun Madan
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/20 , H01L31/075 , C03B27/00 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/022466 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A solar cell substrate comprising a glass plate, and a transparent electrically conductive layer formed thereon, wherein said glass plate is tempered.
摘要翻译：一种太阳能电池基板，包括玻璃板和形成在其上的透明导电层，其中所述玻璃板被回火。

8. 发明授权

US5016562A Modular continuous vapor deposition system 失效
标题翻译：模块化连续气相沉积系统
公开(公告)号：US5016562A
公开(公告)日：1991-05-21
申请号：US307836
申请日：1989-02-07
申请人： Arun Madan , Bolko Von Roedern
发明人： Arun Madan , Bolko Von Roedern
IPC分类号： C23C16/54 , H01L21/00 , H01L31/20
CPC分类号： H01L21/67173 , C23C16/54 , H01L21/67207 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A modular continuous vapor deposition system for the fabrication of semiconductor devices having a plurality of deposition modules isolated from each other by isolation modules which prevent the cross contamination of the different processing gases used in the deposition modules. Each of the deposition modules has a flow of a decomposable processing gas therethrough at a desired pressure, and means for generating a continuous glow discharge. The glow discharge decomposes the processing gas to deposit a layer of amorphous semiconductor material on the discrete substrate sheets as they are transported through each of the deposition modules. A plurality of gate valves effectively seal the interfaces between adjacent modules to isolate them from their immediate neighbors and are opened in a predetermined sequence to allow the substrate sheets to be transported from one module to the next. The isolation modules are connected to a vacuum source and a back-fill gas source. A control coordinates the activation of the gate valves, the vacuum source and the back-fill gas source so that the substrate sheets can be uninterruptedly transported through the system while maintaining the glow discharge continuous and gas pressure in each deposition module at the desired pressure.
摘要翻译：一种用于制造半导体器件的模块化连续气相沉积系统，其具有通过隔离模块彼此隔离的多个沉积模块，所述隔离模块防止在沉积模块中使用的不同处理气体的交叉污染。每个沉积模块具有在所需压力下通过其中的可分解处理气体的流动，以及用于产生连续辉光放电的装置。辉光放电分解处理气体，以便在分离的衬底片材上沉积非晶半导体材料层，因为它们被输送通过每个沉积模块。多个闸阀有效地密封相邻模块之间的界面，以将它们与其邻近的邻近物隔离，并以预定的顺序打开以允许基板被从一个模块输送到下一个模块。隔离模块连接到真空源和回填气源。控制器协调闸阀，真空源和回填气源的激活，使得基板可以不间断地传输通过系统，同时保持辉光放电连续，并将每个沉积模块中的气体压力保持在期望的压力。

9. 发明授权

US4710786A Wide band gap semiconductor alloy material 失效
标题翻译：宽带隙半导体合金材料
公开(公告)号：US4710786A
公开(公告)日：1987-12-01
申请号：US872075
申请日：1986-06-09
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： A wide band amorphous semiconductor alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and a plurality of different and complimentary density of states reducing elements.
摘要翻译：一种宽带非晶半导体合金，其包括硅主体基体并且其中包含碳或氮并且具有多个不同且互补的状态的还原元件。

10. 发明授权

US4415760A Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region 失效
标题翻译：在非晶硅本体中结合有绝缘层的非晶硅太阳能电池以及抑制空穴向N型区域的反向扩散的方法
公开(公告)号：US4415760A
公开(公告)日：1983-11-15
申请号：US367815
申请日：1982-04-12
申请人： Arun Madan
发明人： Arun Madan
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06 , H01L31/18
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Hydrogenated amorphous silicon solar cells which incorporate a thin insulating layer between a photoactive layer of intrinsic hydrogenated amorphous silicon and a heavily doped radiation incident N or N.sup.+ -type layer of hydrogenated amorphous silicon.
摘要翻译：氢化非晶硅太阳能电池，其在本征氢化非晶硅的光活性层和重掺杂辐射入射的N或N +型氢化非晶硅层之间结合有薄绝缘层。

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