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1. 发明专利

JP2005157855A Rental product management system 审中-公开
标题翻译：租赁产品管理系统
公开(公告)号：JP2005157855A
公开(公告)日：2005-06-16
申请号：JP2003397257
申请日：2003-11-27
申请人： Es Toshiba Engineering Kk , Mitsubishi Materials Corp , Toshiba Eng Co Ltd , Toshiba Finance Corp , Toshiba Plant Systems & Services Corp , イーエス東芝エンジニアリング株式会社 , 三菱マテリアル株式会社 , 東芝エンジニアリング株式会社 , 東芝ファイナンス株式会社 , 東芝プラントシステム株式会社
发明人： WAGI SHOZO , ENDO TAKANORI , MORI TOMOHIRO , NOMOTO HIROYUKI , KAN SHIGETOSHI , AOKI YUTAKA , USUI YORIHIRO , KOBAYASHI NOBUYUKI , FUKUMOTO YUJI , TABUCHI ATSUO
IPC分类号： B65G61/00 , G06K17/00 , G06Q30/06 , G06Q50/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a management system for efficiently managing the information of a rental product sufficiently in detail and in a long term. SOLUTION: This system is provided with a server for executing intensive management by using information related with lending and the individual information of a lent product, an IC tag attached with the product in which the information related with lending is stored so as to be read and written in a non-contact state, a reader/writer for reading and writing the information of the IC tag by radio communication and a computer connected through a network to the intensive management server for managing the information related with lending. This system is characterized to execute the unitary management and sharing of the information related with lending in at least two or more processes such as the manufacturing plant, circulation, shipping setting, lending, repair during lending and disposal after lending of the product. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种管理系统，用于有效地对租赁产品的信息进行详细和长期的管理。解决方案：该系统具有服务器，用于通过使用与贷款相关的信息和借出产品的个人信息来执行密集管理，附带有存储与贷款相关的信息的产品的IC标签，以便以非接触状态读取和写入，读/写器，用于通过无线电通信读取和写入IC标签的信息，以及通过网络连接的计算机向密集管理服务器管理与贷款相关的信息。该系统的特点是在产品借出后的至少两个以上过程中执行与贷款相关的信息的单一管理和共享，例如制造工厂，流通，运输设置，贷款，借贷和处置中的修理。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2015049164A 原子炉圧力容器の除染方法及びその除染システム有权
标题翻译：核反应堆压力容器消毒方法和核反应堆压力容器消毒系统
公开(公告)号：JP2015049164A
公开(公告)日：2015-03-16
申请号：JP2013181668
申请日：2013-09-02
申请人：株式会社東芝 , Toshiba Corp , イーエス東芝エンジニアリング株式会社 , Es Toshiba Engineering Kk , 東芝プラントシステム株式会社 , Toshiba Plant Systems & Services Corp
发明人： HIROSE EMIKO , MATSUDA NOBUHISA , AOYAGI TOMOO , KAJINUMA HITOSHI , INAMI ICHIRO
IPC分类号： G21F9/28
摘要：【課題】再循環ポンプを運転せずに、仮設ポンプのみの運転によって高い除染効果を実現する原子炉圧力容器の除染技術を提供する。【解決手段】本実施形態に係る原子炉圧力容器の除染方法は、第一供給ライン26から流入させた除染液を原子炉圧力容器11内の上方から原子炉圧力容器11の内壁面方向に噴出させて、シュラウド12の外側を除染する第一除染ステップと、原子炉圧力容器11の内壁を流下した除染液を前記原子炉圧力容器から流出させ、仮設ポンプ21を用いて循環させる第一循環ステップと、を含む。【選択図】図1
摘要翻译：要解决的问题：提供一种核反应堆压力容器去污技术，其能够仅通过在不操作再循环泵的情况下操作临时泵来实现高净化效果。解决方案：根据本发明实施例的核反应堆压力容器净化方法包括：第一净化步骤，从核反应堆压力容器11内的上部向核反应堆压力容器11的内壁方向注入从第一供给管线26流入的去污液，从而净化护罩12; 以及从核反应堆压力容器11流出从核反应堆压力容器11的内壁向下流动的去污液并使用临时泵21使去污液再循环的第一循环工序。

3. 发明专利

JP2009267208A Semiconductor device, and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009267208A
公开(公告)日：2009-11-12
申请号：JP2008116909
申请日：2008-04-28
申请人： Chubu Toshiba Engineering Kk , Toshiba Corp , 中部東芝エンジニアリング株式会社 , 株式会社東芝
发明人： RYUSENJI AKIHIRO , KAJIMOTO SANETOSHI
IPC分类号： H01L21/8247 , H01L21/76 , H01L21/764 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To suppress interference between neighboring cells by reducing capacitor capacitance between neighboring cells. SOLUTION: A semiconductor device includes: a semiconductor substrate 2; a gate insulating film 8 formed on the semiconductor substrate 2; a floating gate electrode 9 formed on the gate insulating film 8; a device isolating groove 3 formed on a surface of the semiconductor substrate 2; and a device isolating and insulating film 5 constituted of a lower portion embedded in the device isolating groove 3 and an upper portion protruded upward from the surface of the semiconductor substrate 2, wherein, inside the device isolating and insulating film 5, a cavity is formed from the upper portion to the lower portion. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过减小相邻单元之间的电容器电容来抑制相邻单元之间的干扰。解决方案：半导体器件包括：半导体衬底2; 形成在半导体基板2上的栅极绝缘膜8; 形成在栅绝缘膜8上的浮栅电极9; 形成在半导体基板2的表面上的器件隔离槽3; 以及由嵌入在器件绝缘槽3中的下部构成的器件隔离绝缘膜5和从半导体衬底2的表面向上突出的上部，其中在器件隔离绝缘膜5的内部形成空腔从上部到下部。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009253144A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009253144A
公开(公告)日：2009-10-29
申请号：JP2008101379
申请日：2008-04-09
申请人： Chubu Toshiba Engineering Kk , Toshiba Corp , Toshiba Microelectronics Corp , 中部東芝エンジニアリング株式会社 , 東芝マイクロエレクトロニクス株式会社 , 株式会社東芝
发明人： SUZUKI ATSUHIRO , SHIMOIDE KOJI , SHIMANE TAKESHI , ARAI NORIHISA , KAJIMOTO SANETOSHI
IPC分类号： H01L21/8247 , H01L21/76 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/0207 , H01L21/823425 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device such as an NAND type flash memory capable of suppressing drop of a withstand voltage while restraining the depth of an element separation region. SOLUTION: Gate electrodes PG are formed side by side by being separated from one another in the gate length direction through a gate insulation film 11 on active areas AA between element separation films adjacent to each other. A crystal silicon layer 14 constituting the gate electrode PG is provided with: a one end 14a projecting onto the upper surface of the element separation film located on one side of the active area AA; and the other end 14b projecting onto the upper surface of the element separation film located on the opposite side of the active area AA. The length L1 of the one end 14a and the length L2 of the other end 14b are different from each other. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制元件分离区域的深度的同时抑制耐电压降低的NAND型闪存的半导体装置。解决方案：栅电极PG通过在相邻的元件分离膜之间的有源区AA上的栅极绝缘膜11在栅极长度方向上彼此分离而并排形成。构成栅电极PG的晶体硅层14设置有：突出到位于有源区AA一侧的元件分离膜的上表面的一端14a; 并且另一端14b突出到位于有源区域AA的相对侧上的元件分离膜的上表面上。一端14a的长度L1和另一端14b的长度L2彼此不同。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009252820A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009252820A
公开(公告)日：2009-10-29
申请号：JP2008096028
申请日：2008-04-02
申请人： Chubu Toshiba Engineering Kk , Toshiba Corp , 中部東芝エンジニアリング株式会社 , 株式会社東芝
发明人： HAYASHI HIDETOMO , SONODA MASAHISA , YAMAWAKI HIDEYUKI
IPC分类号： H01L21/76 , H01L21/8247 , H01L27/08 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To prevent an oxidant from oxidizing a part below a polysilicon film constituting a floating gate electrode as much as possible in oxidation processing after gate processing.
SOLUTION: A method of manufacturing a semiconductor device includes the stages of: laminating and forming a gate insulating film 5, a polysilicon film 6 and a silicon nitride film 10 on a semiconductor substrate 1; forming a groove 4 for element isolation by dry etching; depositing a first oxide film 9 of high density by HDP-CVD to be buried in the groove 4 for element isolation, namely, depositing the first oxide film 9 to be buried in the groove 4 for element isolation of a memory cell portion such that an upper surface thereof is above an active region 2 of the semiconductor substrate 1 and a part over a trench 4 is not covered; burying a second oxide film 12 having lower density than the first oxide film in the groove 4 for element isolation; flattening the first and second oxide films using the silicon nitride film 10 as a stopper; and removing the second oxide film 12 buried in the groove 4 for element isolation of the memory cell portion.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止氧化剂在门处理后的氧化处理中尽可能多地氧化构成浮栅电极的多晶硅膜以下的部分。解决方案：制造半导体器件的方法包括以下步骤：在半导体衬底1上层压和形成栅极绝缘膜5，多晶硅膜6和氮化硅膜10; 通过干蚀刻形成用于元件隔离的凹槽4; 通过HDP-CVD沉积高密度的第一氧化物膜9以埋入用于元件隔离的槽4中，即将第一氧化膜9沉积在凹槽4中以用于存储单元部分的元件隔离，使得其上表面在半导体衬底1的有源区2之上，并且沟槽4上的部分不被覆盖; 在用于元件隔离的槽4中埋设具有比第一氧化物膜低的密度的第二氧化物膜12; 使用氮化硅膜10作为塞子来平坦化第一和第二氧化物膜; 并且去除埋在槽4中的用于存储单元部分的元件隔离的第二氧化物膜12。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP3905769B2 Safety verification device 有权
公开(公告)号：JP3905769B2
公开(公告)日：2007-04-18
申请号：JP2002037300
申请日：2002-02-14
申请人：イーエス東芝エンジニアリング株式会社 , 東芝プラントシステム株式会社
发明人：卓郎市原 , 宏司松岡
IPC分类号： G08B21/04 , G08B25/04 , G08B25/10 , H04M11/04 , H04Q9/00

7. 发明专利

JP2005286155A Semiconductor storage device and manufacturing method thereof 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：JP2005286155A
公开(公告)日：2005-10-13
申请号：JP2004099062
申请日：2004-03-30
申请人： Chubu Toshiba Engineering Kk , Toshiba Corp , 中部東芝エンジニアリング株式会社 , 株式会社東芝
发明人： OKAJIMA MUTSUMI , HARA TORU
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device where the occurrence of erroneous writing is prevented by suppressing an interference effect between proximal cells in a columnar direction, and to provide a manufacturing method of the semiconductor storage device. SOLUTION: The semiconductor storage device includes a memory cell array in which memory cell transistors having laminated structures (2, 3, 8, 11, 12, 13 and 14) provided with a gate insulation film 2, floating gate electrodes (3 and 8) on this gate insulation film 2, an inter-electrode insulation film 11 on the floating gate electrodes (3 and 8), and control gate electrodes (12, 13, and 14) of the inter-electrode insulation film 11 are plurally arranged in the state of a matrix. The memory cell array is provided with an element separation insulation film 7 inserted between the floating gate electrodes (3 and 8) of the memory cell transistors adjacent in a row direction, and a columnar direction cell separation insulation film inserted between the floating gate electrodes (3 and 8) of the memory cell transistors adjacent in the columnar direction and having a specific inductive capacity smaller than 3.9. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供通过抑制柱状方向上的近端电池之间的干扰效应来防止发生错误写入的半导体存储装置，并提供半导体存储装置的制造方法。解决方案：半导体存储装置包括存储单元阵列，其中具有层叠结构（2,3,8,11,12,13和14）的存储单元晶体管具有栅极绝缘膜2，浮栅电极（3 和8）在该栅极绝缘膜2上，浮栅电极（3和8）上的电极间绝缘膜11和电极间绝缘膜11的控制栅电极（12,13和14）是多个排列成矩阵状态。存储单元阵列设置有插入在与行方向相邻的存储单元晶体管的浮置栅电极（3和8）之间的元件隔离绝缘膜7和插入在浮栅电极之间的柱状方向单元隔离绝缘膜 3和8）的存储单元晶体管在柱状方向上相邻并且具有小于3.9的比容积。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2004234554A Patrol inspection data monitoring device and its monitoring method 审中-公开
标题翻译： PATROL检查数据监控设备及其监控方法
公开(公告)号：JP2004234554A
公开(公告)日：2004-08-19
申请号：JP2003025038
申请日：2003-01-31
申请人： Toshiba Corp , Toshiba Eng Co Ltd , 東芝エンジニアリング株式会社 , 株式会社東芝
发明人： WAKABAYASHI YOSHIAKI , KOTAKE HIKARI
IPC分类号： G06Q50/06 , G05B23/02 , G06Q50/00 , H04B1/3822 , H04B1/40 , H04M11/00 , H04Q9/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a patrol inspection data monitoring device capable of realizing hands-free work on an inspector side and the batch management of check sheets by allowing a processor on a monitoring center side to have a function of inputting voice information on the inspector side to the check sheet provided on the monitoring center side as character string information. SOLUTION: In order to execute the inspection of equipment 11 corresponding to the inspection items of a check list by patrolling the equipment 11, transmit the inspection result to a general monitoring center 12 set at a place different from an inspection spot and manage the inspection result in the general monitoring center 12, the general monitoring center 12 and a portable terminal 41 which transmits the voice information (a) gathered to a head set 42 are connected through a communication network 45. The general monitoring center 12 is provided with a voice transmitter-receiver 21 for receiving the voice information (a), a processor 22 having a function of converting the received voice information (a) to the character string information b, and a display device 23 for displaying the character string information b. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种巡视检查数据监视装置，其能够通过允许监视中心侧的处理器具有输入语音的功能，在检查者侧实现检查页面的免提工作和批量管理检查页面检查员侧的信息作为字符串信息提供给监视中心侧的检查单。
解决方案：为了通过巡视设备11对与检查单的检查项目相对应的设备11进行检查，将检查结果发送到设置在与检查点不同的地方的一般监控中心12并管理一般监视中心12，一般监视中心12以及发送收集到头部组42的语音信息（a）的便携终端41的检查结果通过通信网络45连接。一般监视中心12设置有用于接收语音信息（a）的语音发送器 - 接收器21，具有将接收的语音信息（a）转换为字符串信息b的功能的处理器22以及用于显示字符串信息b的显示装置23。版权所有（C）2004，JPO＆NCIPI

9. 发明专利

JP2004219683A Operation training equipment 审中-公开
标题翻译：操作培训设备
公开(公告)号：JP2004219683A
公开(公告)日：2004-08-05
申请号：JP2003006606
申请日：2003-01-15
申请人： Toshiba Corp , Toshiba Eng Co Ltd , 東芝エンジニアリング株式会社 , 株式会社東芝
发明人： NAKAJIMA KAZUTOO
IPC分类号： G09B9/00 , G21C17/00
摘要： PROBLEM TO BE SOLVED: To provide an operation training equipment with which the state of an operation tool when operation training is being conducted is easily confirmed and positional state of the operation tool is easily switched into the initial state. SOLUTION: Status data of an operation tool 13 inputted from an operation tool state inputting device 14 and a prescribed initial state of the operation tool 13 are compared by an operation processor 11 to determine unequal coincidence. The operation tool 13 determined by the operation processor 11 as an unequal coincidence is informed to an informing device 17. And an operation tool switching device 19 switches, based on the direction of the operation processor 11, the operation tool 13 determined by the operation processor as an unequal coincidence into the prescribed initial state. Thus, switching into the initial state is carried out automatically instead of manually. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种操作训练设备，其可以容易地确认操作训练时的操作工具的状态，并且操作工具的位置状态容易地切换到初始状态。
解决方案：由操作工具状态输入装置14输入的操作工具13的状态数据和操作工具13的规定的初始状态由操作处理器11进行比较，以确定不相等的重合。操作工具切换装置19根据操作处理器11的方向切换由操作处理器11确定的操作工具13，该操作工具13由操作处理器11确定为不相等的重合。作为规定的初始状态的不平等的巧合。因此，切换到初始状态是自动而不是手动执行的。版权所有（C）2004，JPO＆NCIPI

10. 发明专利

JP2004219273A Method for ascertaining pressurized surface/impacted surface 审中-公开
公开(公告)号：JP2004219273A
公开(公告)日：2004-08-05
申请号：JP2003007548
申请日：2003-01-15
申请人： Toshiba Eng Co Ltd , 東芝エンジニアリング株式会社
发明人： OBA TERUYUKI
IPC分类号： G01L5/00
摘要： PROBLEM TO BE SOLVED: To provide a method for ascertaining a pressurized surface/an impacted surface, having a simple constitution and used for various objects.
SOLUTION: This method for ascertaining a pressurized surface/an impacted surface comprises a process for applying a first film exfoliative solution to an objective surface of a measuring object, a process for solidifying the first exfoliative solution, a process for applying a pigment solution onto the solidified first exfoliative solution, a process for solidifying the pigment solution, a process for applying a second film exfoliative solution onto the solidified pigment solution, and a process for solidifying the second exfoliative solution. The state of the objective surface of the measuring object is ascertained by pressurizing or impacting the objective surface of the measuring object to which these solutions are applied.
COPYRIGHT: (C)2004,JPO&NCIPI

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