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1. 发明申请

WO2015086419A1 SYNTHETIC DIAMOND OPTICAL MIRRORS 审中-公开
标题翻译：合成金刚石光学镜
公开(公告)号：WO2015086419A1
公开(公告)日：2015-06-18
申请号：PCT/EP2014/076501
申请日：2014-12-04
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： DODSON, Joseph , ANOIKIN, Yevgeny Vasilievich , TWITCHEN, Daniel , MCCLYMONT, Mark Robin
IPC分类号： G02B5/08
CPC分类号： G02B5/0858 , G02B1/02 , G02B5/0891
摘要： A mirror for use in high power optical applications, the mirror comprising: a support plate comprising a synthetic diamond material; and a reflective coating disposed over the support plate, wherein the reflective coating comprises a bonding layer of carbide forming material which bonds the reflective coating to the synthetic diamond material in the support plate, a reflective metal layer disposed over the bonding layer, and one or more layers of dielectric material disposed over the reflective metal layer, wherein the bonding layer and the reflective metal layer together have a total thickness in a range 50 nm to 10 μm with the reflective metal layer having a thickness of no more than 5 μm, and wherein the support plate and the reflective coating are configured such that the mirror has a reflectivity of at least 99% at an operational wavelength of the mirror.
摘要翻译：一种用于大功率光学应用的镜子，所述镜子包括：包括合成金刚石材料的支撑板; 以及设置在所述支撑板上的反射涂层，其中所述反射涂层包括将所述反射涂层粘结到所述支撑板中的所述合成金刚石材料的碳化物形成材料的接合层，设置在所述结合层上的反射金属层，设置在反射金属层上方的多层电介质材料，其中结合层和反射金属层的总厚度在50nm至10μm的范围内，反射金属层的厚度不超过5μm，以及其中所述支撑板和所述反射涂层被构造成使得所述反射镜在所述反射镜的操作波长处具有至少99％的反射率。

2. 发明申请

WO2014095373A1 SUBSTRATES FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件基板
公开(公告)号：WO2014095373A1
公开(公告)日：2014-06-26
申请号：PCT/EP2013/075557
申请日：2013-12-04
申请人： ELEMENT SIX LIMITED
发明人： MOLLART, Timothy , JIANG, Quanzhong , EDWARDS, Michael John , ALLSOPP, Duncan , BOWEN, Christopher Rhys , WANG, Wang Nang
IPC分类号： H01L21/20
CPC分类号： C30B25/18 , C23C16/27 , C30B25/183 , C30B29/04 , C30B29/36 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02376 , H01L21/02428 , H01L21/02433 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness t d , the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness t sc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ΔT ec ; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch ΔT ec , wherein B, t d , t sc , and ΔT ec are selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.
摘要翻译：一种制造复合半导体部件的方法，包括：（i）提供包括具有厚度td的合成金刚石材料晶片的弓形基板，所述弓形基底被弯曲数量B并包括凸面和凹面; （ii）在生长温度T下经由化学气相沉积技术在弓形基板的凸面上生长化合物半导体材料层，以形成包括在凸面上的厚度为tsc的化合物半导体材料层的弓形复合半导体部件的弯曲基底，化合物半导体材料在生长温度T和室温之间具有比合成金刚石材料更高的平均热膨胀系数，提供热膨胀不匹配＆Dgr; Tec; 由于热膨胀不匹配而导致的冷却期间化合物半导体材料层比合成金刚石材料晶圆收缩的程度更高，其中B，td，tsc和＆Dgr; Tec 被选择为使得化合物半导体材料层在弯曲的基板上屈服的弯曲度使冷却收缩，从而将弓形复合半导体部件拉到平坦的构型中，在冷却后具有拉伸应力的化合物半导体材料层小于500MPa。

3. 发明申请

WO2014090664A1 METHOD FOR MAKING DIAMOND LAYERS BY CVD 审中-公开
标题翻译：通过CVD制备金刚石层的方法
公开(公告)号：WO2014090664A1
公开(公告)日：2014-06-19
申请号：PCT/EP2013/075576
申请日：2013-12-04
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： PICKLES, Charles Simon James , WORT, Christopher , BRANDON, John , PERKINS, Neil
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C23C16/274 , C23C16/511 , C30B25/105 , C30B25/12 , C30B25/165 , C30B29/04
摘要： A method of coating a non-refractory and/or non-planar substrate (8) with synthetic diamond material using a microwave plasma chemical vapour deposition (CVD) synthesis technique, the method comprising: • forming a composite substrate assembly (1) comprising: • a support substrate (2) comprising an upper surface; • one or more electrically conductive refractory guards (6) disposed over the upper surface of the support substrate and extending to a height h g above the upper surface of the support substrate; and one or more non-refractory and/or non-planar substrates disposed over the upper surface of the support substrate and extending to a height h s above the upper surface of the support substrate, wherein the height h s is less than the height h g , wherein a difference in height h g - h s lies in a range 0.2 mm to 10 mm; • placing the composite substrate assembly within a plasma chamber of a microwave plasma CVD reactor; • feeding process gases into the plasma chamber including a carbon containing gas and a hydrogen containing gas; • feeding microwaves in the plasma chamber to form a microwave plasma at a location over the composite substrate assembly; and • growing synthetic diamond material on the one or more non-refractory and/or non-planar substrates.
摘要翻译：一种使用微波等离子体化学气相沉积（CVD）合成技术用合成金刚石材料涂覆非耐火和/或非平面基底（8）的方法，所述方法包括：•形成复合衬底组件（1），包括： •支撑衬底（2），包括上表面; •一个或多个导电耐火材料保护件（6），其布置在所述支撑基板的上表面上方并延伸到所述支撑基板的上表面上方的高度hg; 以及一个或多个非耐火和/或非平面基底，其设置在支撑基板的上表面上方并且延伸到支撑基板的上表面上方的高度h s，其中高度h s小于高度hg，其中高度差hg-hs在0.2mm至10mm的范围内; •将复合衬底组件放置在微波等离子体CVD反应器的等离子体室内; •将工艺气体进料到等离子体室中，包括含碳气体和含氢气体; •在等离子体室中馈送微波以在复合衬底组件上的位置形成微波等离子体; 以及•在所述一个或多个非耐火材料和/或非平面基材上生长合成金刚石材料。

4. 发明申请

WO2015096986A1 POST-SYNTHESIS PROCESSING OF DIAMOND AND RELATED SUPER-HARD MATERIALS 审中-公开
标题翻译：金刚石和相关超硬材料的合成加工
公开(公告)号：WO2015096986A1
公开(公告)日：2015-07-02
申请号：PCT/EP2014/077238
申请日：2014-12-10
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： MCCLYMONT, Mark
IPC分类号： B24B9/16 , C30B33/00
CPC分类号： B24B9/16 , C30B29/04 , C30B33/00
摘要： A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm 2 , the method comprising: (a) a first processing step in which a processing surface is moved over a surface of the super-hard material such that an abrasive removes material from the surface of the super-hard material; (b) a measuring step in which a surface profile of either the processing surface or the surface of the super-hard material is measured after performing the first processing step to yield a measured end surface profile of the first processing step; and (c) a second processing step for removing material from the surface of the super-hard material, the second processing step comprising the use of at least two processing sub-steps using different processing surfaces for processing the surface of the super-hard material after the first processing step, the second processing step including the use of a first processing surface which has a first surface profile which is measured to have a larger radius of curvature than said measured end surface profile of the first processing step and a second processing surface which is measured to have a second surface profile which has a smaller radius of curvature than said measured end surface profile of the first processing step.
摘要翻译：一种处理维氏硬度不小于2000kg / mm2的超硬材料的方法，所述方法包括：（a）第一加工步骤，其中处理表面在超硬材料的表面上移动，如研磨剂从超硬材料的表面去除材料; （b）测量步骤，其中在执行所述第一处理步骤之后测量所述超硬材料的所述加工表面或所述表面的表面轮廓以产生所述第一加工步骤的测量的端面轮廓; 以及（c）用于从超硬材料的表面除去材料的第二加工步骤，所述第二加工步骤包括使用不同的加工表面的至少两个加工子步骤来加工超硬材料的表面在第一处理步骤之后，第二处理步骤包括使用具有第一表面轮廓的第一处理表面，该第一处理表面被测量为具有比所述第一处理步骤的测量的端面轮廓更大的曲率半径，以及第二处理表面其被测量为具有比所述第一处理步骤的测量的端面轮廓更小的曲率半径的第二表面轮廓。

5. 发明申请

WO2015086544A1 POST-SYNTHESIS PROCESSING OF DIAMOND AND RELATED SUPER-HARD MATERIALS 审中-公开
标题翻译：金刚石和相关超硬材料的合成加工
公开(公告)号：WO2015086544A1
公开(公告)日：2015-06-18
申请号：PCT/EP2014/076944
申请日：2014-12-08
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： MCCLYMONT, Mark
IPC分类号： B24B37/04 , B24B37/10 , B24B37/005 , B24B53/017 , B24B57/02 , B24B49/16
CPC分类号： B24B37/042 , B24B37/005 , B24B37/102 , B24B49/16 , B24B53/017 , B24B57/02
摘要： A method of processing a super-hard material product (100) having a Vickers hardness of no less than 2000 kg/mm2, the method comprising: mounting the super-hard material product (100) with a surface of the super-hard material product (100) in contact with a surface of a processing wheel (102) with an interface region disposed between the surface of the super-hard product (100) and the surface of the processing wheel (102); loading the super-hard material product (100) such that the super-hard material product (100) is pressed against the surface of the processing wheel (102) with a loading force(106); rotating the processing wheel (102); and feeding an abrasive slurry onto the surface of the processing wheel (102), the abrasive slurry comprising super-hard abrasive grit particles (104) disposed in a carrier fluid, wherein the super-hard abrasive grit particles (104) of the abrasive slurry have an average particle size of at least 1 μm and roll between the surface of the processing wheel (102) and the surface of the super-hard material product (100) within the interface region in order to cause surface micro-cracking of the super-hard material product (100) and removal of material from the surface of the super-hard material product (100), and wherein the method of processing includes at least two processing periods including a first processing period during which the loading force (106) is applied to the super-hard material product (100) in a non-central location of the super-hard material product (100) and a second processing period during which the loading force (106) applied to the super-hard material product (100) is reduced and centralised on the super-hard material product (100) relative to the loading force (160) applied during the first processing period.
摘要翻译：一种处理维氏硬度不小于2000kg / mm2的超硬材料产品（100）的方法，所述方法包括：将超硬材料产品（100）与超硬材料产品（100）与处理轮（102）的表面接触，具有设置在超硬产品（100）的表面和处理轮（102）的表面之间的界面区域; 加载超硬材料产品（100），使得超硬材料产品（100）以加载力（106）压靠处理轮（102）的表面; 旋转所述加工轮（102）; 并且将研磨浆料供给到所述加工轮（102）的表面上，所述磨料浆料包括设置在载体流体中的超硬磨料砂粒（104），其中所述磨料浆料的超硬磨料颗粒（104）具有至少1μm的平均粒径和在界面区域内处理轮102的表面与超硬材料产物（100）的表面之间的滚动，以引起超级表面的表面微裂纹（100）的表面除去材料，并且其中所述处理方法包括至少两个处理周期，所述至少两个处理周期包括加载力（106）的第一加工周期，施加到超硬材料产品（100）的非中心位置处的超硬材料产品（100）和施加到超硬材料产品（100）的加载力（106）的第二处理时段 100）相对于在第一处理期间施加的加载力（160），在超硬材料产品（100）上被减少和集中。

6. 发明申请

WO2015075120A1 POLYCRYSTALLINE CHEMICAL VAPOUR DEPOSITED DIAMOND TOOL PARTS AND METHODS OF FABRICATING, MOUNTING, AND USING THE SAME 审中-公开
标题翻译：多晶化学气相沉积金刚石工具零件及其制造方法，安装和使用方法
公开(公告)号：WO2015075120A1
公开(公告)日：2015-05-28
申请号：PCT/EP2014/075137
申请日：2014-11-20
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： MCCLYMONT, Mark
IPC分类号： C23C16/27 , C30B29/04 , B23B27/20
CPC分类号： B23B27/20 , B23B2226/315 , B23B2228/04 , C23C16/01 , C23C16/27 , C23C16/279 , C30B29/04
摘要： A polycrystalline CVD synthetic diamond work piece for use in a polycrystalline CVD synthetic diamond tool, the polycrystalline CVD synthetic diamond work piece comprising: a working surface; and a rear mounting surface; wherein an average lateral grain size of the rear mounting surface is no less than 10 μm, and wherein the working surface comprises: (a) smaller diamond grains than the rear mounting surface; (b) an average lateral grain size in a range 10 nm to 15 μm; and (c) a Raman signal generated by a laser focused on the working surface which exhibits one or more of the following characteristics: (1) an sp3 carbon peak at 1332 cm -1 having a full width half-maximum of no more than 8.0 cm -1 , (2) an sp2 carbon peak at 1550 cm -1 having a height which is no more than 20% of a height of an sp3 carbon peak at 1332 cm -1 after background subtraction when using a Raman excitation source at 633 nm; and (3) an sp3 carbon peak at 1332 cm -1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm.
摘要翻译：一种用于多晶CVD合成金刚石工具的多晶CVD合成金刚石工件，所述多晶CVD合成金刚石工件包括：工作表面; 和后安装面; 其特征在于，所述后安装面的平均横向晶粒尺寸不小于10μm，并且其中所述工作表面包括：（a）比所述后安装表面小的金刚石晶粒; （b）10nm至15μm范围内的平均横向晶粒尺寸; 和（c）由聚焦在工作表面上的激光产生的拉曼信号，其具有以下一个或多个特征：（1）全宽度半最大值不大于8.0的1332cm -1处的sp3碳峰 cm-1，（2）1535cm -1处的sp2碳峰，当在633nm处使用拉曼激发源时，背景减去后，在1332cm -1处具有不大于sp3碳峰的高度的20％的高度纳米; 和（3）在1332cm -1处的sp3碳峰不大于使用拉曼激发源在785nm的拉曼光谱中局部背景强度的10％。

7. 发明申请

WO2014079836A2 SYNTHETIC DIAMOND HEAT SPREADERS 审中-公开
标题翻译：合成金刚石散热器
公开(公告)号：WO2014079836A2
公开(公告)日：2014-05-30
申请号：PCT/EP2013/074158
申请日：2013-11-19
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： TWITCHEN, Daniel
IPC分类号： H01L23/373
CPC分类号： H01L23/3732 , C23C16/27 , H01L21/02527 , H01L21/0262 , H01L23/36 , H01L23/3677 , H01L23/3735 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A synthetic diamond heat spreader, the synthetic diamond heat spreader comprising: a synthetic diamond material including a surface layer having a 13 C content of less than a natural isotopic abundance (1.1%) and a support layer which is thicker than the surface layer and which has an isotopic abundance of 13 C which is closer to the natural isotopic abundance than the surface layer, wherein at least 50% of a thickness of the synthetic diamond material is formed of the support layer; and a non-diamond thermal transfer layer disposed in contact with the surface layer of the synthetic diamond material for transferring heat into the surface layer.
摘要翻译：一种人造金刚石散热器，该人造金刚石散热器包括：人造金刚石材料，其包括具有小于天然同位素丰度的1.1C含量的表面层（1.1 ％）和比表面层厚并且具有比表面层更接近天然同位素丰度的13 C同位素丰度的支持层，其中至少50％的厚度的人造金刚石材料由支撑层形成; 以及与人造金刚石材料的表面层接触设置的非金刚石热转印层，用于将热量传递到表面层中。

8. 发明申请

WO2015193155A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：WO2015193155A1
公开(公告)日：2015-12-23
申请号：PCT/EP2015/062957
申请日：2015-06-10
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： BRANDON, John, Robert , FRIEL, Ian , COOPER, Michael, Andrew , SCARSBROOK, Geoffrey, Alan , GREEN, Ben, Llewlyn
IPC分类号： H01J37/32 , C30B29/04
CPC分类号： H01J37/32201 , C23C16/274 , C23C16/458 , C23C16/511 , C30B25/105 , C30B25/205 , C30B29/04 , H01J37/32192 , H01J37/3222 , H01J37/32247 , H01J37/32284 , H01J37/32293 , H01J37/32302 , H01J37/3244 , H01J37/32715 , H01J2237/3321 , H01J2237/3323
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Ρτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Ρτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％在初级微波谐振模式频率f中将P P注入到等离子体室中，并且其中多个微波源中的至少一些是固态微波源。

9. 发明申请

WO2015144572A1 DIAMOND BASED ELECTROCHEMICAL SENSOR HEADS 审中-公开
标题翻译：基于金刚石的电化学传感器头
公开(公告)号：WO2015144572A1
公开(公告)日：2015-10-01
申请号：PCT/EP2015/055874
申请日：2015-03-20
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： JOSEPH, Maxim , BITZIOU, Eleni , PALMER, Nicola, Louise , MOLLART, Timothy , NEWTON, Mark, Edward , MACPHERSON, Julie, Victoria
IPC分类号： G01N27/30
CPC分类号： G01N27/308
摘要： A diamond electrochemical sensor head comprising: a planar sensing surface; a rear surface through which electrical connections are provided; one or more boron doped diamond electrodes which are disposed within trenches in an electrically insulating diamond support matrix at the planar sensing surface, the one or more boron doped diamond electrodes extending partially through the electrically insulating diamond support matrix from the planar sensing surface towards the rear surface of the electrically insulating diamond support matrix; one or more vias extending from the rear surface of the electrically insulating diamond support matrix to a rear surface of the one or more boron doped diamond electrodes within the electrically insulating diamond support matrix; one or more ohmic contacts disposed on the rear surface of the one or more boron doped diamond electrodes within the vias in the electrically insulating diamond support matrix; and one or more electrical connectors extending through the one or more vias to the one or more ohmic contacts disposed on the rear surface of the one or more boron doped diamond electrodes within the vias in the electrically insulating diamond support matrix, wherein the diamond electrochemical sensor head has a thickness from the planar sensing surface in which the one or more boron doped diamond electrodes are disposed to the rear surface of the electrically insulating diamond support matrix in a range 50 micrometres to 1.5millimetres, wherein the one or more boron doped diamond electrodes extend through the electrically insulating diamond support matrix from the planar sensing surface towards the rear surface of the electrically insulating diamond support matrix with a depth in a range 20 micrometres to 500 micrometres, and wherein the one or more ohmic contacts within the one or more vias on the rear surface of the one or more boron doped diamond electrodes each have a resistance which is sufficiently low that an ohmic drop in a faradaic electrochemical experiment is no greater than 10 mV, where the ohmic drop is defined by I x R with I being current and R being total resistance.
摘要翻译：一种金刚石电化学传感器头，包括：平面感测表面; 提供电连接的后表面; 一个或多个硼掺杂的金刚石电极，其设置在平面感测表面处的电绝缘金刚石支撑矩阵的沟槽内，所述一个或多个硼掺杂金刚石电极部分地延伸穿过电绝缘金刚石支撑矩阵从平面感测表面朝向后方电绝缘金刚石支撑基体的表面; 从电绝缘金刚石支撑基体的后表面延伸到电绝缘金刚石支撑基体内的一个或多个硼掺杂金刚石电极的后表面的一个或多个通孔; 一个或多个欧姆接触件，设置在电绝缘金刚石支撑基体中的通孔内的一个或多个硼掺杂金刚石电极的后表面上; 以及一个或多个电连接器，其延伸穿过所述一个或多个通孔到设置在所述电绝缘金刚石支撑基体中的所述通孔内的所述一个或多个硼掺杂金刚石电极的后表面上的所述一个或多个欧姆触点，其中所述金刚石电化学传感器头部具有来自平面感测表面的厚度，其中一个或多个掺杂硼的金刚石电极以50微米至1.5毫米的范围设置在电绝缘金刚石支撑体的背面，其中一个或多个硼掺杂金刚石电极通过电绝缘金刚石支撑基体从平面感测表面延伸到电绝缘金刚石支撑基体的后表面，深度在20微米至500微米的范围内，并且其中一个或多个通孔内的一个或多个欧姆接触在一个或多个掺杂硼的金刚石电极的后表面上各自具有电阻其足够低，使得法拉第电化学实验中的欧姆下降不大于10mV，其中欧姆下降由I x R定义，其中I为电流，R为总电阻。

10. 发明申请

WO2015128229A1 MOUNTED DIAMOND COMPONENTS AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：安装的金刚石组件及其制造方法
公开(公告)号：WO2015128229A1
公开(公告)日：2015-09-03
申请号：PCT/EP2015/053357
申请日：2015-02-18
申请人： ELEMENT SIX N.V
发明人： DE WIT, Hendrikus , PELS, Gerrit
IPC分类号： G02B7/00 , G02B7/18 , H01S3/04
CPC分类号： G02B7/008 , G02B1/02 , G02B7/1815
摘要： A mounted diamond component comprising: a diamond component bonded to a mounting component via a bond, wherein the bond comprises a layer of carbide forming metal adhered to the diamond component, a barrier layer disposed over the carbide forming metal layer, and a layer of gold disposed over the barrier layer, wherein the layer of carbide forming metal has a thickness in a range 1 to 100 nm, wherein the barrier layer has a thickness in a range 10 to 200 nm, wherein the layer of gold has a thickness in a range 0.5 to 40 micrometres, wherein the bond has a shear stress in a range 2 to 50 kg/mm2 and a thermal conductivity in a range 50 to 500 W/mK, wherein the layer of gold is formed of two fused layers of gold which form the bonding between the diamond component and the mounting component and wherein the bond does not comprise a metallic solder or braze bond between the layer of gold and the mounting component.
摘要翻译：一种安装的金刚石组件，包括：通过键合结合到安装部件的金刚石部件，其中所述焊接包括粘附到所述金刚石部件的碳化物形成金属层，设置在所述碳化物形成金属层上的阻挡层和金层设置在所述阻挡层上，其中所述碳化物形成金属层的厚度在1至100nm的范围内，其中所述阻挡层的厚度在10至200nm的范围内，其中所述金层的厚度在一定范围内 0.5至40微米，其中该键具有2至50kg / mm 2范围内的剪切应力和50至500W / mK范围内的热导率，其中金层由两个形成金的熔融层形成金刚石部件和安装部件之间的接合，并且其中所述接合在所述金层和所述安装部件之间不包括金属焊料或钎焊接合。

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