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1. 发明申请

WO2015071484A1 METHODS OF FABRICATING SYNTHETIC DIAMOND MATERIALS USING MICROWAVE PLASMA ACTIVED CHEMICAL VAPOUR DEPOSITION TECHNIQUES AND PRODUCTS OBTAINED USING SAID METHODS 审中-公开
标题翻译：使用微波等离子体激活化学蒸气沉积技术制备合成金刚石材料的方法和使用方法获得的产品
公开(公告)号：WO2015071484A1
公开(公告)日：2015-05-21
申请号：PCT/EP2014/074864
申请日：2014-11-18
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： KHAN, Rizwan , COE, Steven , WILMAN, Jonathan , TWITCHEN, Daniel , SCARSBROOK, Geoffrey , BRANDON, John , WORT, Christopher , MARKHAM, Matthew , FRIEL, Ian , ROBERTSON, Katharine
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C30B25/105 , C23C16/274 , C23C16/511 , C30B29/04
摘要： A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.
摘要翻译：提供了使用微波等离子体激活化学气相沉积技术制造合成金刚石材料的方法，其利用在大面积上并且延长的时间段施加的高且均匀的微波功率密度。描述了使用这种合成技术制造的产品，其包括具有大面积和低氮浓度的单晶CVD金刚石层以及高纯度，快速生长速率的单晶CVD金刚石材料。

2. 发明申请

WO2014090664A1 METHOD FOR MAKING DIAMOND LAYERS BY CVD 审中-公开
标题翻译：通过CVD制备金刚石层的方法
公开(公告)号：WO2014090664A1
公开(公告)日：2014-06-19
申请号：PCT/EP2013/075576
申请日：2013-12-04
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： PICKLES, Charles Simon James , WORT, Christopher , BRANDON, John , PERKINS, Neil
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C23C16/274 , C23C16/511 , C30B25/105 , C30B25/12 , C30B25/165 , C30B29/04
摘要： A method of coating a non-refractory and/or non-planar substrate (8) with synthetic diamond material using a microwave plasma chemical vapour deposition (CVD) synthesis technique, the method comprising: • forming a composite substrate assembly (1) comprising: • a support substrate (2) comprising an upper surface; • one or more electrically conductive refractory guards (6) disposed over the upper surface of the support substrate and extending to a height h g above the upper surface of the support substrate; and one or more non-refractory and/or non-planar substrates disposed over the upper surface of the support substrate and extending to a height h s above the upper surface of the support substrate, wherein the height h s is less than the height h g , wherein a difference in height h g - h s lies in a range 0.2 mm to 10 mm; • placing the composite substrate assembly within a plasma chamber of a microwave plasma CVD reactor; • feeding process gases into the plasma chamber including a carbon containing gas and a hydrogen containing gas; • feeding microwaves in the plasma chamber to form a microwave plasma at a location over the composite substrate assembly; and • growing synthetic diamond material on the one or more non-refractory and/or non-planar substrates.
摘要翻译：一种使用微波等离子体化学气相沉积（CVD）合成技术用合成金刚石材料涂覆非耐火和/或非平面基底（8）的方法，所述方法包括：•形成复合衬底组件（1），包括： •支撑衬底（2），包括上表面; •一个或多个导电耐火材料保护件（6），其布置在所述支撑基板的上表面上方并延伸到所述支撑基板的上表面上方的高度hg; 以及一个或多个非耐火和/或非平面基底，其设置在支撑基板的上表面上方并且延伸到支撑基板的上表面上方的高度h s，其中高度h s小于高度hg，其中高度差hg-hs在0.2mm至10mm的范围内; •将复合衬底组件放置在微波等离子体CVD反应器的等离子体室内; •将工艺气体进料到等离子体室中，包括含碳气体和含氢气体; •在等离子体室中馈送微波以在复合衬底组件上的位置形成微波等离子体; 以及•在所述一个或多个非耐火材料和/或非平面基材上生长合成金刚石材料。

3. 发明申请

WO2018114642A1 SYNTHETIC DIAMOND PLATES 审中-公开
公开(公告)号：WO2018114642A1
公开(公告)日：2018-06-28
申请号：PCT/EP2017/082962
申请日：2017-12-15
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： ELLIS, Julian , BRANDON, John , REININGER, Francis Mark
IPC分类号： G02B7/00 , C30B29/04 , G02B1/02
摘要： A synthetic diamond plate comprising a polygonal plate formed of synthetic diamond material, the polygonal plate of synthetic diamond material having a thickness in a range 0.4 mm to 1. mm, and rounded corners having a radius of curvature in a range 1 mm to 6 mm. A mounted synthetic diamond plate is also disclosed comprising a polygonal synthetic diamond plate as described and a base to which the polygonal synthetic diamond plate is bonded,wherein the base comprises a cooling channel. An array of mounted synthetic diamond plates is also described, comprising a plurality of mounted synthetic diamond plates described above, wherein the cooling channels of the mounted synthetic diamond plates are linked to form a common cooling channel across the array of mounted synthetic diamond plates.

4. 发明授权

EP2627802B1 A BIPOLAR CELL FOR A REACTOR 有权转让
标题翻译：用于反应器的双极电池
公开(公告)号：EP2627802B1
公开(公告)日：2017-08-02
申请号：EP11773122.4
申请日：2011-10-13
申请人： Element Six Technologies Limited
发明人： BRANDON, John , CULLEN, Paul
IPC分类号： C25B9/06 , C25B11/12 , C02F1/461
CPC分类号： C02F1/46109 , C02F1/46104 , C02F2001/46128 , C02F2001/46133 , C02F2201/004 , C02F2201/4611 , C25B9/063 , C25B11/12

5. 发明公开

EP3559720A1 SYNTHETIC DIAMOND PLATES 审中-公开
公开(公告)号：EP3559720A1
公开(公告)日：2019-10-30
申请号：EP17822246.9
申请日：2017-12-15
申请人： Element Six Technologies Limited
发明人： ELLIS, Julian , BRANDON, John , REININGER, Francis Mark
IPC分类号： G02B7/00 , C30B29/04 , G02B1/02

6. 发明公开

EP2931935A1 METHOD FOR MAKING DIAMOND LAYERS BY CVD 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON DIAMANTSCHICHTEN MITTELS CVD
公开(公告)号：EP2931935A1
公开(公告)日：2015-10-21
申请号：EP13799087.5
申请日：2013-12-04
申请人： Element Six Technologies Limited
发明人： PICKLES, Charles Simon James , WORT, Christopher , BRANDON, John , PERKINS, Neil
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C23C16/274 , C23C16/511 , C30B25/105 , C30B25/12 , C30B25/165 , C30B29/04
摘要： A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.
摘要翻译：描述了使用微波等离子体化学气相沉积（MWCVD）合成技术用合成金刚石材料涂覆非耐火和/或非平面基板2的方法。该方法详细地形成复合衬底组件，其包括：具有上表面4的支撑衬底2和设置在支撑衬底2的上表面4上方的一个或多个导电耐火护板6，延伸到上表面4上方的高度hg 的支撑基板2; 以及设置在支撑基板2的上表面4上方的一个或多个非耐火和/或非平面基板8，其中在支撑基板2的上表面4上方的高度hs，其中高度hs和差异在高度hg hs在0.2-10mm的范围内。复合衬底组件位于微波等离子体CVD反应器的等离子体室内（图5）。工艺气体用微波等离子体送入等离子体室，等离子体形成在复合衬底组件上方的一个位置上，从而在一个或多个非耐火和/或非平面衬底上生长合成金刚石。

7. 发明授权

EP2931935B1 METHOD FOR MAKING DIAMOND LAYERS BY CVD 有权
公开(公告)号：EP2931935B1
公开(公告)日：2018-10-24
申请号：EP13799087.5
申请日：2013-12-04
申请人： Element Six Technologies Limited
发明人： PICKLES, Charles Simon James , WORT, Christopher , BRANDON, John , PERKINS, Neil
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04 , C23C16/511 , C30B25/12 , C30B25/16
CPC分类号： C23C16/274 , C23C16/511 , C30B25/105 , C30B25/12 , C30B25/165 , C30B29/04
摘要： A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.

9. 发明公开

EP3071728A1 METHODS OF FABRICATING SYNTHETIC DIAMOND MATERIALS USING MICROWAVE PLASMA ACTIVED CHEMICAL VAPOUR DEPOSITION TECHNIQUES AND PRODUCTS OBTAINED USING SAID METHODS 有权
标题翻译：方法生产合成金刚石材料用微波等离子体增强的化学气相沉积工艺和采用这种工艺生产的产品
公开(公告)号：EP3071728A1
公开(公告)日：2016-09-28
申请号：EP14799468.5
申请日：2014-11-18
申请人： Element Six Technologies Limited
发明人： KHAN, Rizwan , COE, Steven , WILMAN, Jonathan , TWITCHEN, Daniel , SCARSBROOK, Geoffrey , BRANDON, John , WORT, Christopher , MARKHAM, Matthew , FRIEL, Ian , ROBERTSON, Katharine
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C30B25/105 , C23C16/274 , C23C16/511 , C30B29/04
摘要： A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.
摘要翻译：提供了一种使用微波等离子体活化化学气相沉积技术制造的合成金刚石材料的方法，它利用应用超大面积和高均匀的微波功率密度和延长的时间段。产品采用寻求合成技术中描述了包括单晶CVD金刚石层，其具有大面积和低的氮浓度，和高纯度，几乎单晶生长速率CVD金刚石材料制成。

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