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1. 发明申请

WO2015000769A1 BORON DOPED DIAMOND BASED ELECTROCHEMICAL SENSORS 审中-公开
标题翻译：基于钻石的钻石电化学传感器
公开(公告)号：WO2015000769A1
公开(公告)日：2015-01-08
申请号：PCT/EP2014/063439
申请日：2014-06-25
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： MACPHERSON, Julie, Victoria , NEWTON, Mark, Edward , UNWIN, Patrick, Robert , BITZIOU, Eleni , PALMER, Nicola, Louise
IPC分类号： G01N27/30
CPC分类号： G01N27/302 , G01N27/308
摘要： A diamond electrochemical sensor comprising: a sensing electrode formed of boron-doped diamond material; and a pH changing electrode formed of boron-doped diamond material; wherein the sensing electrode and the pH changing electrode are configured such that when placed in an aqueous solution of pH 7 the pH changing electrode can generate H + and OH - allowing a reversible pH change over the sensing electrode across a pH range of at least 3 to 9.
摘要翻译：一种金刚石电化学传感器，包括：由硼掺杂的金刚石材料形成的感测电极; 和由硼掺杂的金刚石材料形成的pH变化电极; 其中感测电极和pH变化电极被配置为使得当放置在pH7的水溶液中时，pH变化电极可以产生H +和OH-，从而允许在感测电极上的可逆pH在pH范围内至少3至 9。

2. 发明申请

WO2015144572A1 DIAMOND BASED ELECTROCHEMICAL SENSOR HEADS 审中-公开
标题翻译：基于金刚石的电化学传感器头
公开(公告)号：WO2015144572A1
公开(公告)日：2015-10-01
申请号：PCT/EP2015/055874
申请日：2015-03-20
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： JOSEPH, Maxim , BITZIOU, Eleni , PALMER, Nicola, Louise , MOLLART, Timothy , NEWTON, Mark, Edward , MACPHERSON, Julie, Victoria
IPC分类号： G01N27/30
CPC分类号： G01N27/308
摘要： A diamond electrochemical sensor head comprising: a planar sensing surface; a rear surface through which electrical connections are provided; one or more boron doped diamond electrodes which are disposed within trenches in an electrically insulating diamond support matrix at the planar sensing surface, the one or more boron doped diamond electrodes extending partially through the electrically insulating diamond support matrix from the planar sensing surface towards the rear surface of the electrically insulating diamond support matrix; one or more vias extending from the rear surface of the electrically insulating diamond support matrix to a rear surface of the one or more boron doped diamond electrodes within the electrically insulating diamond support matrix; one or more ohmic contacts disposed on the rear surface of the one or more boron doped diamond electrodes within the vias in the electrically insulating diamond support matrix; and one or more electrical connectors extending through the one or more vias to the one or more ohmic contacts disposed on the rear surface of the one or more boron doped diamond electrodes within the vias in the electrically insulating diamond support matrix, wherein the diamond electrochemical sensor head has a thickness from the planar sensing surface in which the one or more boron doped diamond electrodes are disposed to the rear surface of the electrically insulating diamond support matrix in a range 50 micrometres to 1.5millimetres, wherein the one or more boron doped diamond electrodes extend through the electrically insulating diamond support matrix from the planar sensing surface towards the rear surface of the electrically insulating diamond support matrix with a depth in a range 20 micrometres to 500 micrometres, and wherein the one or more ohmic contacts within the one or more vias on the rear surface of the one or more boron doped diamond electrodes each have a resistance which is sufficiently low that an ohmic drop in a faradaic electrochemical experiment is no greater than 10 mV, where the ohmic drop is defined by I x R with I being current and R being total resistance.
摘要翻译：一种金刚石电化学传感器头，包括：平面感测表面; 提供电连接的后表面; 一个或多个硼掺杂的金刚石电极，其设置在平面感测表面处的电绝缘金刚石支撑矩阵的沟槽内，所述一个或多个硼掺杂金刚石电极部分地延伸穿过电绝缘金刚石支撑矩阵从平面感测表面朝向后方电绝缘金刚石支撑基体的表面; 从电绝缘金刚石支撑基体的后表面延伸到电绝缘金刚石支撑基体内的一个或多个硼掺杂金刚石电极的后表面的一个或多个通孔; 一个或多个欧姆接触件，设置在电绝缘金刚石支撑基体中的通孔内的一个或多个硼掺杂金刚石电极的后表面上; 以及一个或多个电连接器，其延伸穿过所述一个或多个通孔到设置在所述电绝缘金刚石支撑基体中的所述通孔内的所述一个或多个硼掺杂金刚石电极的后表面上的所述一个或多个欧姆触点，其中所述金刚石电化学传感器头部具有来自平面感测表面的厚度，其中一个或多个掺杂硼的金刚石电极以50微米至1.5毫米的范围设置在电绝缘金刚石支撑体的背面，其中一个或多个硼掺杂金刚石电极通过电绝缘金刚石支撑基体从平面感测表面延伸到电绝缘金刚石支撑基体的后表面，深度在20微米至500微米的范围内，并且其中一个或多个通孔内的一个或多个欧姆接触在一个或多个掺杂硼的金刚石电极的后表面上各自具有电阻其足够低，使得法拉第电化学实验中的欧姆下降不大于10mV，其中欧姆下降由I x R定义，其中I为电流，R为总电阻。

3. 发明授权

EP2825872B1 SYNTHETIC DIAMOND MATERIALS FOR ELECTROCHEMICAL SENSING APPLICATIONS 有权
公开(公告)号：EP2825872B1
公开(公告)日：2019-05-08
申请号：EP13712177.8
申请日：2013-03-13
申请人： Element Six Technologies Limited
发明人： BITZIOU, Eleni , HUTTON, Laura Anne , MACPHERSON, Julie Victoria , NEWTON, Mark Edward , UNWIN, Patrick Robert , PALMER, Nicola Louise , MOLLART, Timothy Peter , DODSON, Joseph Michael
IPC分类号： G01N27/30

4. 发明公开

EP2825872A1 SYNTHETIC DIAMOND MATERIALS FOR ELECTROCHEMICAL SENSING APPLICATIONS 有权
标题翻译： SYNTHETISCHE DIAMANTMATERIALIENFÜRELEKTROCHEMISCHE MESSANWENDUNGEN
公开(公告)号：EP2825872A1
公开(公告)日：2015-01-21
申请号：EP13712177.8
申请日：2013-03-13
申请人： Element Six Technologies Limited
发明人： BITZIOU, Eleni , HUTTON, Laura Anne , MACPHERSON, Julie Victoria , NEWTON, Mark Edward , UNWIN, Patrick Robert , PALMER, Nicola Louise , MOLLART, Timothy Peter , DODSON, Joseph Michael
IPC分类号： G01N27/30
CPC分类号： H01B1/04 , G01N27/308
摘要： A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionised water and 0.1 M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm−2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm−2; a peak-to-peak separation &Dgr;Ep (for a macroelectrode) or a quartile potential &Dgr;E3/4—1/4 (for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV s−1 with respect to a saturated calomel reference electrode in a solution containing only deionised water, 0.1 M KNO3 supporting electrolyte, and 1 mM of FcTMA+ or Ru(NH3)63+ at pH 6; and a capacitance of no more than 10 μF cm−2 as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and −70 mV in a solution containing only deionised water and 0.1 M KNO3 supporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm2) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs−1) to give a value for capacitance in F cm−2.
摘要翻译：具有以下特征的硼掺杂合成金刚石材料：溶剂窗口满足以下标准中的一个或两个，其通过在仅含有去离子水的溶液中相对于饱和甘汞参比电极扫掠硼掺杂合成金刚石材料的电位而测量水和0.1M KNO 3作为pH6下的支持电解质：溶剂窗口在至少4.1V的电位范围内延伸，其中溶剂窗口的电位范围的端点定义为在硼掺杂时测量的阳极和阴极电流密度合成金刚石材料达到38 mA cm-2; 并且溶剂窗口在至少3.3V的电位范围上延伸，其中在硼掺杂的合成金刚石材料处测量的阳极和阴极电流密度达到0.4mA cm -2时，限定溶剂窗口的电位范围的端点; 通过扫描硼掺杂合成物的电位测量的峰 - 峰分离＆Dgr; Ep（用于大电极）或四分位电位＆Dgr; E3 / 4-1 / 4（对于微电极）不超过70mV 在仅含有去离子水，0.1M KNO 3负载电解质和1mM FcTMA +或Ru（NH 3）63+的溶液中，在pH6下，相对于饱和甘汞参比电极以100mV s -1的速率加入金刚石材料; 并且通过在仅含有去离子水和0.1M的溶液中将硼掺杂的合成金刚石材料的电位相对于饱和甘汞参比电极在70mV和-70mV之间扫过，测得的电容不超过10μFcm-2 KNO3在pH6时支持电解质，测量合成电流，当向正电位扫描时，从0 V时的电流值向负电位扫描时减去0 V时的电流值，将减法电流值除以2，然后将结果除以硼掺杂合成金刚石材料的面积（cm2）和电势扫描速率（Vs-1），以给出Fcm-2中的电容值。

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