专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010082683A1 GAS GENERATOR FOR RESTRAINING DEVICE OF VEHICLE 审中-公开
标题翻译：用于限制车辆装置的气体发生器
公开(公告)号：WO2010082683A1
公开(公告)日：2010-07-22
申请号：PCT/JP2010/050663
申请日：2010-01-14
申请人： DAICEL CHEMICAL INDUSTRIES, LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA , TOYODA GOSEI CO., LTD. , KOBAYASHI, Tomoharu , MATSUDA, Naoki , FUKAWATASE, Osamu , KURATA, Tomoko , NONOYAMA, Yuki , YAMADA, Tadashi , OZAKI, Toru
发明人： KOBAYASHI, Tomoharu , MATSUDA, Naoki , FUKAWATASE, Osamu , KURATA, Tomoko , NONOYAMA, Yuki , YAMADA, Tadashi , OZAKI, Toru
IPC分类号： F42B3/04 , F42B3/24 , F42B3/26 , B60R21/264 , C06D5/06
CPC分类号： B60R21/2644 , B60R2021/26011
摘要： The present invention provides a filterless gas generator (10) including, a housing (11) having closure shell (13), a diffuser shell (12) including a gas discharge ports (14), and a flange portion, an inner tube member (20) defining a combustion chamber in an outside thereof for accommodating a gas generating agent (41), the igniter (31) attached to the closure shell such that the igniter projects inside from a hole formed in the bottom plate (13a) of the closure shell, the annular porous member (50) having a plurality of holes (51) which are smaller than the size of the gas generator, defining a space above the combustion chamber, a total opening area (A1) of the gas discharge ports being smaller than a total opening area (A2) of the gas pathway extending from the combustion chamber to the gas discharge ports (Ai
摘要翻译：本发明提供一种无滤器式气体发生器（10），其包括具有封闭壳体（13）的壳体（11），包括气体排出口（14）的扩散器外壳（12），以及凸缘部分，内管构件 20），在其外部限定燃烧室，用于容纳气体发生剂（41），所述点火器（31）附接到所述封闭壳体，使得所述点火器从形成在所述封闭件的底板（13a）中的孔向内突出壳体，具有多个孔（51）的环形多孔构件（50），其小于气体发生器的尺寸，限定了燃烧室上方的空间，气体排出口的总开口面积（A1）较小比从燃烧室延伸到气体排出口（Ai

2. 发明申请

WO2008013319A1 SILICONE RUBBER COMPOSITION, METHOD FOR PRODUCING THE SAME, HEAT-CURABLE SILICONE RUBBER COMPOSITION, AND RUBBER SEALING PART FOR AUTOMOBILES 审中-公开
标题翻译：硅橡胶组合物，其制造方法，热固性硅橡胶组合物和汽车密封件
公开(公告)号：WO2008013319A1
公开(公告)日：2008-01-31
申请号：PCT/JP2007/065120
申请日：2007-07-26
申请人： DOW CORNING TORAY CO., LTD. , TOYODA GOSEI CO., LTD. , OTA, Kenji , MIZUSHIMA, Takashi , IMAI, Hideyuki , IWATA, Takahiro
发明人： OTA, Kenji , MIZUSHIMA, Takashi , IMAI, Hideyuki , IWATA, Takahiro
IPC分类号： C08L83/08
CPC分类号： C08L83/08 , C08L83/00
摘要： A silicone rubber composition comprising (A-1) a diorganopolysiloxane having at least two silicon atom-bonded alkenyl groups per molecule in which at least 48 % by mole of silicon atom-bonded groups are fluorine atom-substituted alkyl groups, (A-2) a diorganopolysiloxane having at least two silicon atom-bonded alkenyl groups per molecule and having no silicon atom-bonded fluorine atom-substituted alkyl group with the proviso that the weight ratio of component (A-1) to component (A-2) is from 70:30 to 98:2, (B) a dry-process silica of which surface has been hydrophobically treated with a cyclic dimethylsiloxane oligomer, (C) a silanol group-containing organosiloxane oligomer or organosilane. A heat-curable silicone rubber composition comprising the silicone rubber composition and (D) a curing catalyst. A rubber sealing part for automobiles resulting from curing of the heat-curable silicone rubber composition.
摘要翻译：一种硅橡胶组合物，其包含（A-1）每分子具有至少两个硅原子键合的烯基的二有机聚硅氧烷，其中至少48摩尔的硅原子键合基团是氟原子取代的烷基（A-2 ）每分子具有至少两个硅原子键合的烯基并且不具有硅原子键合的氟原子取代的烷基的二有机聚硅氧烷，条件是组分（A-1）与组分（A-2）的重量比为（C）含硅烷醇基的有机硅氧烷低聚物或有机硅烷的干法二氧化硅，其表面已用环状二甲基硅氧烷低聚物进行疏水处理。一种可热固化的硅橡胶组合物，其包含硅橡胶组合物和（D）固化催化剂。一种用于汽车固化的可热固化硅橡胶组合物的橡胶密封件。

3. 发明申请

WO2007139231A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2007139231A1
公开(公告)日：2007-12-06
申请号：PCT/JP2007/061412
申请日：2007-05-30
申请人： TOYODA GOSEI CO., LTD. , RITSUMEIKAN UNIVERSITY , KIKAWA, Junjiro , SUZUKI, Akira , KOSAKI, Masayoshi , HIRATA, Koji
发明人： KIKAWA, Junjiro , SUZUKI, Akira , KOSAKI, Masayoshi , HIRATA, Koji
IPC分类号： H01L21/338 , H01L21/205 , H01L29/201 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7786 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L29/2003
摘要： A semiconductor device having an AlGaN-GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance. As shown in FIG. 1, in a semiconductor device having an AlGaN-GaN heterojunction structure including an AlGaN layer 1 and a GaN layer 2, when the Al molar fraction of AlGaN (x%) and the thickness of the AlGaN layer (y nm) satisfy the relations: x + y
摘要翻译：具有包括AlGaN层和GaN层的AlGaN-GaN异质结结构的半导体器件，该器件在薄层电阻上随时间呈现不变。如图所示。如图1所示，在具有包括AlGaN层1和GaN层2的AlGaN-GaN异质结结构的半导体器件中，当AlGaN的Al摩尔分数（x％）和AlGaN层的厚度（ynm）满足以下关系时： x + y <55,25 = x = 40，y = 10，y小于临界厚度，由此在AlGaN层中不产生裂纹。因此，本发明提供了一种半导体器件，尽管具有高的Al摩尔分数，但其表面电阻实际上几乎没有随时间变化。

4. 发明申请

WO2005122234A1 FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE, A METHOD FOR MANUFACTURING THEM, AND A METHOD OF SEMICONDUCTOR CRYSTAL GROWTH 审中-公开
标题翻译：场效应晶体管，半导体器件，其制造方法和半导体晶体生长方法
公开(公告)号：WO2005122234A1
公开(公告)日：2005-12-22
申请号：PCT/JP2005/011006
申请日：2005-06-09
申请人： TOYODA GOSEI CO., LTD. , HIRATA, Koji , KOSAKI, Masayoshi , SENDA, Masanobu , SHIBATA, Naoki
发明人： HIRATA, Koji , KOSAKI, Masayoshi , SENDA, Masanobu , SHIBATA, Naoki
IPC分类号： H01L21/338
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising a rapid interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述缓冲层和阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构，其包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的快速界面提供层以及构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

5. 发明申请

WO2015145517A1 BATTERY MODULE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电池模块及其制造方法
公开(公告)号：WO2015145517A1
公开(公告)日：2015-10-01
申请号：PCT/JP2014/006489
申请日：2014-12-26
申请人： TOYODA GOSEI CO., LTD.
发明人： TATSUMI, Yoshiaki , KUSABA, Kosuke
IPC分类号： H01M2/10
CPC分类号： H01M2/024 , H01M2/08 , H01M2/1077 , H01M2/206 , H01M2220/20
摘要： A technique for sufficiently filling an adhesive between a battery retaining section of a holder and a battery cell in a battery module configured by the battery cell being inserted and adhered in the aperture-shaped battery retaining section provided in the holder is provided. An adhesive layer that adheres a holder 5 and a battery cells 1 in a battery module is formed in a two-layer structure of a holder-side adhesive layer 45 making contact with an inner circumferential surfaces 51 of a battery retaining sections 50 and a cell-side adhesive layer 41 making contact with an outer circumferential surfaces 11 of the battery cells 1, and different types of adhesives are used for an adhesive configuring the holder-side adhesive layer 45 and an adhesive configuring the cell-side adhesive layer 41.
摘要翻译：提供了一种用于充分填充由电池单元构成的电池模块中的保持器的电池保持部和电池单元之间的粘合剂的技术，该电池模块被插入并粘附在设置在保持器中的开口状电池保持部中。将保持器5和电池单元1粘附在电池模块中的粘合剂层形成为与电池保持部50的内周面51和电池单元接触的保持器侧粘合层45的两层结构与电池单元1的外周面11接触的侧面粘合剂层41，以及构成保持体侧粘合剂层45的粘合剂和构成电池侧粘合剂层41的粘合剂使用不同类型的粘合剂。

6. 发明申请

WO2014203448A1 FRONT DEFROSTER NOZZLE DEVICE 审中-公开
标题翻译：前压缩机喷嘴装置
公开(公告)号：WO2014203448A1
公开(公告)日：2014-12-24
申请号：PCT/JP2014/002603
申请日：2014-05-16
申请人： TOYODA GOSEI CO., LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： TERAI, Nobuhiro , SHIBATA, Minoru , MARUTA, Yasuhiro , SANJO, Shizuo , UNO, Hidenori , SAKIMOTO, Nobuya
IPC分类号： B60H1/34
CPC分类号： B60S1/544 , B60H1/242 , B60H1/3407
摘要： A defrosting performance identical to that in a conventional front defroster nozzle device is exhibited by a simpler structure even in the case of decreasing the overall length of a front defroster nozzle device in the direction of vehicle width. A current of air from a front blow-opening 12 formed on the same side as a windshield 200 is mainly sent to the left and right end portions of the windshield 200 and a current of air from a rear blow-opening 13 adjacent to the front blow-opening 12 and formed further inside the vehicle interior than the front blow-opening 12 is mainly sent to the central portion of the windshield 200. Accordingly, currents of air are inhibited from interfering with each other.
摘要翻译：即使在使前方除霜器喷嘴装置在车宽方向上的总长度减小的情况下，也可以通过更简单的结构表现出与常规的前除霜器喷嘴装置相同的除霜性能。形成在与挡风玻璃200相同侧的前吹风口12的空气的电流主要被传送到挡风玻璃200的左端部和右端部，并且来自后吹风开口13的与前方相邻的空气流吹气开口12并且形成在车辆内部比前吹风口12更远的位置，主要被送到挡风玻璃200的中心部分。因此，防止空气流互相干扰。

7. 发明申请

WO2010082680A1 GAS GENERATOR FOR RESTRAINING DEVICE OF VEHICLE 审中-公开
标题翻译：用于限制车辆装置的气体发生器
公开(公告)号：WO2010082680A1
公开(公告)日：2010-07-22
申请号：PCT/JP2010/050660
申请日：2010-01-14
申请人： DAICEL CHEMICAL INDUSTRIES, LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA , TOYODA GOSEI CO., LTD. , KOBAYASHI, Tomoharu , MATSUDA, Naoki , FUKAWATASE, Osamu , KURATA, Tomoko , NONOYAMA, Yuki , YAMADA, Tadashi , OZAKI, Toru
发明人： KOBAYASHI, Tomoharu , MATSUDA, Naoki , FUKAWATASE, Osamu , KURATA, Tomoko , NONOYAMA, Yuki , YAMADA, Tadashi , OZAKI, Toru
IPC分类号： B60R21/264
CPC分类号： B60R21/2644 , F42B3/04
摘要： The present invention provides a filterless gas generator (10), including a housing having a closure shell (13), a diffuser (12) and a flange portion (12b), an inner tube member (20) accommodating an igniter (31) coaxially with the central axis of the housing, an opening end (29) of the inner tube member located in a bottom plate (13a) of the closure shell and a ventilating portion (27) formed at the opening end (29), the inner tube member fixed to an igniter attaching portion (13c), being a cylindrical portion projecting inwardly in the closure shell, and a passage being formed between the inner tube member and the igniter attaching portion to reach the ventilating portion, an annular porous member (50) disposed and defining a space (60) above the combustion chamber, the space communicating to a gas discharge path (16) between an outer circumference cylindrical member (42) and a side surface of the diffuser shell through a communicating portion (45).
摘要翻译：本发明提供了一种无滤器式气体发生器（10），其包括具有封闭壳体（13），扩散器（12）和凸缘部分（12b）的壳体，同轴地容纳点火器（31）的内管构件与壳体的中心轴线相对，位于封闭壳体的底板（13a）中的内管构件的开口端（29）和形成在开口端（29）的通风部分（27），内管固定在点火器安装部分（13c）上的部件，其是在封闭壳体内向内突出的圆柱形部分，以及形成在内管部件和点火器安装部分之间以到达通风部分的通道;环形多孔部件（50）设置和限定燃烧室上方的空间（60），所述空间通过连通部分（45）与外圆柱形部件（42）和扩散器壳体的侧表面之间的气体排出路径（16）连通。

8. 发明申请

WO2008087993A1 KNEE-PROTECTING AIRBAG APPARATUS 审中-公开
标题翻译：防震保护装置
公开(公告)号：WO2008087993A1
公开(公告)日：2008-07-24
申请号：PCT/JP2008/050470
申请日：2008-01-09
申请人： TOYODA GOSEI CO., LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA , ADACHI, Yuichi , BITO, Kazuaki , FUKAWATASE, Osamu , SANADA, Akiyoshi
发明人： ADACHI, Yuichi , BITO, Kazuaki , FUKAWATASE, Osamu , SANADA, Akiyoshi
IPC分类号： B60R21/237 , B60R21/203
CPC分类号： B60R21/203 , B60R21/206 , B60R21/2338 , B60R21/237 , B60R2021/0051 , B60R2021/23169 , B60R2021/23382
摘要： The knee-protecting airbag apparatus is mounted on a lower region of a column cover covering a steering column of vehicle projecting rearward from an instrument panel. The airbag (47) folded and housed in a housing emerges and spreads in four directions from the housing for deployment in front of knees of a driver when fed with inflation gas from an inflator (41) that is stored inside the airbag (47) and disposed to the rear side of the housing. Folding of the airbag (47) before being stored in the housing is such that left and right areas of a region (50) attached to the housing is folded on the side of the column side wall (49) to reduce the lateral width L2 of the airbag (47) without superimposing the left and right areas of the mounting region (50) on the inflator (41) in the vertical direction and a folded region (63) on the front side of the mounting region (50) is located in parallel with and in front of the inflator (41).
摘要翻译：膝盖保护用气囊装置安装在覆盖从仪表板向后方突出的车辆转向柱的柱盖的下部区域。折叠并容纳在壳体中的安全气囊（47）从壳体四个方向露出并展开，用于在从安全气囊（47）内部储存的充气机（41）供给充气气体的情况下向驾驶员膝盖前方展开，以展开设置在壳体的后侧。在将气囊（47）储存在壳体中之前折叠使得附接到壳体的区域（50）的左右区域在柱侧壁（49）侧折叠以减小横向宽度L2 安全气囊（47）没有将安装区域（50）的左右区域在垂直方向上叠置在充气器（41）上，而在安装区域（50）的前侧上的折叠区域（63）位于与充气机（41）平行并在前面。

9. 发明申请

WO2007117032A1 METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE BASED COMPOUND SEMICONDUCTOR 审中-公开
标题翻译：用于生产基于III族氮化物的化合物半导体的方法和装置
公开(公告)号：WO2007117032A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/058023
申请日：2007-04-05
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na-Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

10. 发明申请

WO2005029595A1 GROUP III-NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基于III-NITRIDE的化合物半导体器件
公开(公告)号：WO2005029595A1
公开(公告)日：2005-03-31
申请号：PCT/JP2004/013082
申请日：2004-09-01
申请人： TOYODA GOSEI CO., LTD. , TAKI, Tetsuya
发明人： TAKI, Tetsuya
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/14
摘要： In a group III-nitride-based compound semiconductor device 100, an intermediate layer 108 is 5 provided between a p-AlGaN layer 107 and a p-GaN layer 109, to each of which an acceptor impurity is added. On this occasion, the intermediate layer 108 is doped with a donor impurity in a concentration, by which holes generated by an acceptor impurity introduced into the intermediate layer 108 during the formation of the p-AlGaN layer 107 are substantially compensated. As a result, the conductivity of the intermediate layer 108 becomes extremely low, and therefore the electrostatic withstand voltage of the group III-nitride-based compound semiconductor device 100 improves significantly.
摘要翻译：在III族氮化物类化合物半导体器件100中，在p-AlGaN层107和p-GaN层109之间设置中间层108，其中添加受主杂质。在这种情况下，中间层108被掺杂有施主杂质，其浓度通过在形成p-AlGaN层107期间由引入到中间层108中的受主杂质产生的空穴被基本上补偿。结果，中间层108的导电性变得非常低，因此III族氮化物系化合物半导体器件100的静电耐受电压显着提高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式