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1. 发明申请

WO2008072751A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译：用于生产III族氮化物化合物半导体晶体的方法
公开(公告)号：WO2008072751A1
公开(公告)日：2008-06-19
申请号：PCT/JP2007/074180
申请日：2007-12-10
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N 2 ) atmosphere at 3.7 MPa and 870°C employing a flux mixture including Ga, Na, and Li at about 870°C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500µm or more, the temperature of the crucible is maintained at 850°C to 880°C, whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2/2））气氛中，在3.7MPa和870℃下，通过助熔剂法将GaN单晶20生长在晶种（GaN层13）的晶体生长表面上，在约870℃下包括Ga，Na和Li的混合物。由于模板10的后表面是蓝宝石基板11的R平面，所以模板10容易从其背面腐蚀或溶解在助熔剂混合物中。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而将整个蓝宝石衬底11溶解在焊剂中混合物。

2. 发明申请

WO2007117033A1 APPARATUS FOR PRODUCING GROUP III NITRIDE BASED COMPOUND SEMICONDUCTOR 审中-公开
标题翻译：用于生产第三类基于氮化物的化合物半导体的装置
公开(公告)号：WO2007117033A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/058024
申请日：2007-04-05
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B9/00 , C30B29/403
摘要： An object of the invention is to prevent, in the flux method, diffusion of substances that constitute the atmosphere of the outer vessel into the reactor. The apparatus for producing a group III nitride based compound semiconductor, the apparatus including a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, and an outer vessel for accommodating the reactor and the heating apparatus, characterized in that diffusion of substances that constitute the atmosphere of the outer vessel into the reactor is prevented.
摘要翻译：本发明的目的是在助焊剂方法中防止构成外容器气氛的物质扩散到反应器中。用于制造III族氮化物基化合物半导体的装置，该装置包括在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置和用于容纳反应器和加热装置，其特征在于防止构成外部容器的气体的物质扩散到反应器中。

3. 发明申请

WO2007105832A1 SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE, OPTICAL DEVICE, AND PRODUCTION METHODS THEREFOR 审中-公开
标题翻译：半导体基板，电子器件，光学器件及其制造方法
公开(公告)号：WO2007105832A1
公开(公告)日：2007-09-20
申请号：PCT/JP2007/055942
申请日：2007-03-15
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/10 , H01L21/208 , H01L33/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

4. 发明申请

WO2007117034A1 PRODUCTION METHODS OF SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：半导体晶体和半导体衬底的生产方法
公开(公告)号：WO2007117034A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/058025
申请日：2007-04-05
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/00 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , H01L33/0075 , Y10T428/265 , Y10T428/266
摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.
摘要翻译：提供适合于制造电子器件或光学器件的高品质的半导体衬底。本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

5. 发明申请

WO1989000731A1 MEMORY DEVICE 审中-公开
标题翻译：内存设备
公开(公告)号：WO1989000731A1
公开(公告)日：1989-01-26
申请号：PCT/JP1988000703
申请日：1988-07-15
申请人： FANUC LTD , KURAKAKE, Mitsuo , KINOSHITA, Jiro , KAWAMURA, Fumio
发明人： FANUC LTD
IPC分类号： G06F12/16
CPC分类号： G06F11/1048
摘要： A RAM for storing only parity bits are combined with data RAMs to provide a memory device that has a parity check capability. Parity bits are derived from RAM data adapted to read and write a plurality of data bits at a time. To support a plurality of data RAMs (20 to 27), a parity RAM (4) for storing these data bits is provided and shared by them. This decreases the number of parity RAMs for the number of data RAMs, thus the chip area.
摘要翻译：用于仅存储奇偶校验位的RAM与数据RAM组合以提供具有奇偶校验能力的存储器件。奇偶校验位是从适合于一次读取和写入多个数据位的RAM数据导出的。为了支持多个数据RAM（20〜27），提供并共享用于存储这些数据位的奇偶校验RAM（4）。这减少了数据RAM数量的奇偶校验RAM数量，从而减少了芯片面积。

6. 发明申请

WO2006022302A3 PROCESS FOR PRODUCING ALUMINUM NITRIDE CRYSTAL AND ALUMINUM NITRIDE CRYSTAL OBTAINED THEREBY 审中-公开
标题翻译：生产氮化钠晶体和获得的氮化铝晶体的方法
公开(公告)号：WO2006022302A3
公开(公告)日：2006-04-20
申请号：PCT/JP2005015366
申请日：2005-08-24
申请人： UNIV OSAKA , KANSAI TECH LICENSING ORG CO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA FUMIO , YOSHIMURA MASASHI , KAWAHARA MINORU , ISOBE HIROAKI
发明人： MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA FUMIO , YOSHIMURA MASASHI , KAWAHARA MINORU , ISOBE HIROAKI
IPC分类号： C30B29/38 , C30B9/10
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： A process in which an aluminum nitride crystal can be produced under moderate pressure and temperature conditions. There is provided a process for producing an aluminum nitride crystal, comprising forming and growing of an aluminum nitride crystal through reaction, in the presence of a nitrogenous gas, of the nitrogen with aluminum in a flux containing the following components (A) and (B) or in a flux containing the following component (B): (A): element(s) of at least either an alkali metal or an alkaline earth metal group, and (B): at least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
摘要翻译：在中等压力和温度条件下可以生产氮化铝晶体的方法。提供了一种生产氮化铝晶体的方法，其包括在含有以下组分（A）和（B）的助熔剂中，在氮气与氮气的存在下，在氮气的存在下，通过反应形成和生长氮化铝晶体）或含有以下组分（B）的助熔剂中：（A）：碱金属或碱土金属组中的至少一种的元素，和（B）：至少一种选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）。

7. 发明申请

WO2007117032A1 METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE BASED COMPOUND SEMICONDUCTOR 审中-公开
标题翻译：用于生产基于III族氮化物的化合物半导体的方法和装置
公开(公告)号：WO2007117032A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/058023
申请日：2007-04-05
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： YAMAZAKI, Shiro , IWAI, Makoto , SHIMODAIRA, Takanao , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na-Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

8. 发明申请

WO1986001012A1 SYSTEM FOR CONTROLLING A PROGRAMMABLE CONTROLLER 审中-公开
标题翻译：用于控制可编程控制器的系统
公开(公告)号：WO1986001012A1
公开(公告)日：1986-02-13
申请号：PCT/JP1985000415
申请日：1985-07-22
申请人： FANUC LTD , NAGAMINE, Tsuyoshi , KAWAMURA, Fumio , TORIYAMA, Shuji
发明人： FANUC LTD
IPC分类号： G05B19/02
CPC分类号： G05B19/056 , G05B2219/13105 , G05B2219/13138 , G05B2219/13142
摘要： A programmable controller of the stored program system which enables even a complex sequence control to be easily executed. A memory (50) stores a first program of the ladder type and a second program described in another programming language such as PASCAL or FORTRAN. First and second setting means (51), (52), respectively, set execution times for processing by the first and second programs. Control means (53) executes the processing according to the first and second programs alternatingly for periods of time set by the first and second setting means (51), (52).

9. 发明专利

JPH0369987A DRAWING TEACHING IMPLEMENT 失效
公开(公告)号：JPH0369987A
公开(公告)日：1991-03-26
申请号：JP20474589
申请日：1989-08-09
申请人： KAWAMURA FUMIO , ALLOY SHOJI KK
发明人： KAWAMURA FUMIO , MORITA YUKICHI , OHARA HIDEO
IPC分类号： G09B23/04
摘要： PURPOSE:To allow the easy understanding of a stereoscopic structure from the standpoint of drawing by connecting flat plate members having the same shapes as the shapes of the figure drawn on a base plate to the base plate at the straight part by means of hinges or flexible members so that the members can be rotated around the straight parts as an axis center. CONSTITUTION:A tetrahedron is adequate at the stereoscopic pattern to indicate the intersection of two straight lines at the time of teaching a figure forming method to know the real angle formed by the two straight lines when the lines intersect in space by RABAT (Act of turning down) method. The two straight lines are shown by AE and AD and the Aa line intersects perpendicularly with the base plate 1. These lines correspond to the bottom plate of the tetrahedron or the base plate 2. Three sheets of the flat plate members 3 to 5 constitute on thin sheet body when the members are folded down and the planes thereof are paralleled with the base plate plane. This shape allows easy carrying and storage by stacking. A learner is able to learn the figure while observing the shape with eyes and since the members are placed on a desk in the same manner as the figure is imaginable in the brain, the effect of learning the drawing is extremely enhanced.

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