专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4996132A Heat-resistant photosensitive resin composition 失效
标题翻译：耐热感光性树脂组合物
公开(公告)号：US4996132A
公开(公告)日：1991-02-26
申请号：US159622
申请日：1988-02-23
申请人： Kenji Tazawa , Akira Iwata , Tomoki Horigome , Hiroyuki Tohda
发明人： Kenji Tazawa , Akira Iwata , Tomoki Horigome , Hiroyuki Tohda
IPC分类号： C08F299/02 , C08F2/44 , C08F2/48 , C08F290/00 , C08G59/08 , C08G59/17 , G03F7/027 , G03F7/032 , G03F7/033
CPC分类号： G03F7/032
摘要： The photosensitive resin composition comprises (a) a ternary copolymer of an ethylenically unsaturated amide, carboxyl-containing monomer and third monomer, (b) an esterified resin by the reaction of an unsaturated carboxylic acid and a novolactype epoxy resin, (c) a photopolymerizable monomer, (d) a photopolymerization initiator and (e) a powder such as a finely divided silica filler. The resist layer formed from the composition is capable of being developed with an alkaline aqueous solution and has excellent heat resistance in addition to other desirable properties when the patterned resist layer by the pattern-wise exposure to ultraviolet light and development is subjected to a heat treatment to effect thermal curing.

2. 发明授权

US09405200B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09405200B2
公开(公告)日：2016-08-02
申请号：US13624639
申请日：2012-09-21
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/004 , G03F7/38 , G03F7/20 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中通过涂覆抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中表现出增加的溶解度的碱性组分（A），光产生剂组分（C），酸性供给成分（Z）和含有选自氟原子和硅原子中的至少一种的化合物（F），并且不含显示出极性增加的酸分解基团通过酸在基底上的作用; 其中抗蚀剂膜被曝光的步骤（2）; 步骤（3），其中在步骤（2）之后进行烘烤; 以及步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案，以及在步骤（1）中使用的抗蚀剂组合物。

3. 发明授权

US07129018B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US07129018B2
公开(公告)日：2006-10-31
申请号：US11258274
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

4. 发明申请

US20050112498A1 Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：化学放大型正型抗蚀剂组合物，抗蚀剂层压材料，抗蚀剂图案形成方法和制造半导体器件的方法
公开(公告)号：US20050112498A1
公开(公告)日：2005-05-26
申请号：US11028456
申请日：2005-01-03
申请人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
发明人： Kazuyuki Nitta , Takeyoshi Mimura , Satoshi Shimatani , Waki Okubo , Tatsuya Matsumi
IPC分类号： G03F7/039 , G03F7/11 , G03C1/76
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).
摘要翻译：本发明提供了一种抗蚀剂组合物，其包含（A）聚羟基苯乙烯，其中羟基的至少一部分氢原子被酸解离的溶解抑制基团取代，并且当所述多羟基苯乙烯的碱溶液中的溶解度增加时，通过酸的作用除去可离解的溶解抑制基团，和（B）通过辐射照射产生酸的成分，其中解离后的成分（A）的酸解离溶解抑制基团的保留率使用盐酸的试验为40％以下，并且还提供了含有聚羟基苯乙烯的化学扩增型正性抗蚀剂组合物，其中羟基的至少一部分氢原子被具有直链的低级烷氧基 - 烷基取代，支链烷氧基，并且当聚羟基苯乙烯的碱溶液中的溶解度增加时低级烷氧基 - 烷基通过酸的作用代替组分（A）而被除去。

5. 发明授权

US10394122B2 Resist composition, method for forming resist pattern, compound, and acid generator 有权
公开(公告)号：US10394122B2
公开(公告)日：2019-08-27
申请号：US15631592
申请日：2017-06-23
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Issei Suzuki , Masahito Yahagi , Yuki Fukumura , Kazuaki Ebisawa , Yoshitaka Komuro , Toshikazu Takayama , Takashi Kamizono , Tatsuya Fujii
IPC分类号： G03F7/004 , G03F7/38 , C08F220/22 , C08F220/18 , C08F220/20 , C08F220/30 , C07C381/12 , H01L21/027 , C08L51/08 , C08L53/00 , C08L67/04 , C08L87/00 , G03F7/039
摘要： A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(═O)—O— or —O—C(═O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation. Rb1—Yb1—Vb1—CF2—SO3−(Mm+)1/m (b1)

6. 发明授权

US07063934B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 失效
公开(公告)号：US07063934B2
公开(公告)日：2006-06-20
申请号：US10147984
申请日：2002-05-20
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038 , G03F7/11 , G03F7/40 , G03F7/023
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式