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1. 发明申请

US20100085675A1 ELECTRONIC CIRCUIT 失效
标题翻译：电子电路
公开(公告)号：US20100085675A1
公开(公告)日：2010-04-08
申请号：US12441164
申请日：2007-11-21
申请人： Hirokazu Oki
发明人： Hirokazu Oki
IPC分类号： H02H9/02
CPC分类号： H02M1/08 , H02M1/38 , H03K5/1515 , H03K17/162 , H03K19/00361
摘要： Provided is an electronic circuit including an upper control unit and a lower control unit. The upper control unit performs a logic transition of a gate signal so as to off-latch an upper switch by using the fall edge of a drive signal as a trigger and release the off-latch of the upper switch by using the rise edge of a monitor signal as a trigger. The lower control unit performs a logic transition of the gate signal so as to off-latch a lower switch by using the rise edge of the drive signal as a trigger and release the off-latch of the lower switch by using the rise edge of a monitor signal as a trigger.
摘要翻译：提供了一种包括上控制单元和下控制单元的电子电路。上控制单元执行门信号的逻辑转换，以便通过使用驱动信号的下降沿作为触发来解锁锁定上开关，并通过使用上位开关的上升沿来释放上开关的断开监控信号作为触发。下控制单元执行门信号的逻辑转换，以便通过使用驱动信号的上升沿作为触发来使下开关断开闩锁，并且通过使用下行开关的上升沿来释放下开关的断开监控信号作为触发。

2. 发明申请

US20090272992A1 Semiconductor Light-Emitting Device and Process for Producing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090272992A1
公开(公告)日：2009-11-05
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

3. 发明申请

US20060163602A1 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US20060163602A1
公开(公告)日：2006-07-27
申请号：US10559447
申请日：2004-06-07
申请人： Shinji Isokawa
发明人： Shinji Isokawa
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/60 , H01L25/0753 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： An optical semiconductor device (A1) comprises a light reflector (5) and an optical semiconductor chip (3). The reflector (5) includes two first reflecting surfaces (50a) spaced from each other in direction x, and two second reflecting surfaces (50b) spaced from each other in direction y. The chip (3) includes a rectangular upper surface and a rectangular lower surface spaced from each other in direction z perpendicular to both of the directions x and y. The chip (3) further includes at least one light-emitting surface (31) extending between the upper and the lower surfaces. The light-emitting surface (31) faces a corresponding one of the second reflecting surfaces (50b). The light-emitting surface (31) is non-parallel to the corresponding second reflecting surfaces (50b) as viewed in parallel to the direction z.
摘要翻译：光学半导体器件（A 1）包括光反射器（5）和光学半导体芯片（3）。反射器（5）包括在方向x上彼此间隔开的两个第一反射表面（50a）和在y方向上彼此间隔开的两个第二反射表面（50b）。芯片（3）包括矩形上表面和矩形下表面，它们在垂直于两个方向x和y的方向z上彼此间隔开。芯片（3）还包括在上表面和下表面之间延伸的至少一个发光表面（31）。发光面（31）面对相应的一个第二反射面（50b）。与Z方向平行地观察时，发光面（31）不对应于相应的第二反射面（50b）。

4. 发明申请

US20050247954A1 ZnO based compound semiconductor light emitting device and method for manufacturing the same 失效
标题翻译： ZnO系化合物半导体发光元件及其制造方法
公开(公告)号：US20050247954A1
公开(公告)日：2005-11-10
申请号：US11166254
申请日：2005-06-27
申请人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
发明人： Shigeru Niki , Paul Fons , Kakuya Iwata , Tetsuhiro Tanabe , Hidemi Takasu , Ken Nakahara
IPC分类号： H01L21/00 , H01L33/00 , H01L33/28 , H01S5/02 , H01S5/323 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/021 , H01S5/32308 , H01S5/32341 , H01S5/327
摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
摘要翻译：发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体。优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

5. 发明申请

US20120261676A1 SiC FIELD EFFECT TRANSISTOR 有权
标题翻译： SiC场效应晶体管
公开(公告)号：US20120261676A1
公开(公告)日：2012-10-18
申请号：US13518650
申请日：2010-12-24
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/12
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/165 , H01L29/41741 , H01L29/41766 , H01L29/43 , H01L29/47 , H01L29/66068 , H01L29/7803 , H01L29/7806 , H01L29/8618 , H01L29/872
摘要： A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
摘要翻译： SiC场效应晶体管包括：SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构，与源极区域接触的半导体层中的第二导电类型体区域，与体区域接触的半导体层中的第一导电型漂移区域与所述体区相对的栅极电极，其具有插入在所述电极和所述体区之间的栅极绝缘膜，用于在所述体区中形成沟道，以使所述电流在所述漂移区域和所述源极区域之间流动，以及阻挡层形成层与漂移区接触以通过与漂移区的接触而形成结屏障，所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。

6. 发明授权

US08384208B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08384208B2
公开(公告)日：2013-02-26
申请号：US11826093
申请日：2007-07-12
申请人： Yoshinori Shishida , Shinichi Chikaki , Ryotaro Yagi , Kazuo Kohmura , Hirofumi Tanaka
发明人： Yoshinori Shishida , Shinichi Chikaki , Ryotaro Yagi , Kazuo Kohmura , Hirofumi Tanaka
IPC分类号： H01L23/12 , H01L23/053
CPC分类号： H01L21/31138 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/3105 , H01L21/31116 , H01L21/3148 , H01L21/31633 , H01L21/31695 , H01L21/318 , H01L21/76807 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L21/76835 , Y10T428/2495
摘要： A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.
摘要翻译：获得能够提高多孔二氧化硅膜的机械强度同时抑制位于多孔二氧化硅膜的下层上的膜劣化的半导体器件。该半导体装置包括形成在半导体基板上的有机膜，形成在有机膜表面上的由紫外线难以透过的材料构成的紫外线透过抑制膜和形成有第一多孔二氧化硅膜在紫外线透过抑制膜的表面上。

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