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81. 发明授权

US5605576A High frequency magnetron plasma apparatus 失效
标题翻译：高频磁控管等离子设备
公开(公告)号：US5605576A
公开(公告)日：1997-02-25
申请号：US336631
申请日：1994-11-09
申请人： Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Tadahiro Ohmi
发明人： Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Tadahiro Ohmi
IPC分类号： H05H1/46 , C23C14/35 , C23C14/40 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/34 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/3441 , C23C14/35 , C23C16/509 , H01J37/3405
摘要： An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.
摘要翻译：本发明的目的是提高等离子体装置的能量效率，并提供可以精确控制等离子体的高频磁控管等离子体装置。等离子体装置具有基座电极，等离子体激励电极，安装在等离子体激励电极上的磁体和设置在等离子体激励电极周围的磁屏蔽，所有这些都设置在真空室中。磁屏蔽对高频具有高阻抗。磁屏蔽优选用直流电接地，更优选通过电感接地。

82. 发明授权

US5115512A Optical waveguide device and method of making the same 失效
标题翻译：光波导装置及其制造方法
公开(公告)号：US5115512A
公开(公告)日：1992-05-19
申请号：US592976
申请日：1990-10-04
申请人： Takumi Fujiwara , Hiroshi Mori , Takemi Kawazoe
发明人： Takumi Fujiwara , Hiroshi Mori , Takemi Kawazoe
IPC分类号： G02B6/122 , C23C14/40 , G02B6/13 , G02B6/134
CPC分类号： G02B6/1342
摘要： The optical waveguide device comprises an optical waveguide formed as a region having a high index of refraction on a surface or in an interior including the surface of a base plate made of a ferroelectric crystal, and a film covering the surface of said optical waveguide in the direction along the c axis of said crystal phase plate and having electrical conductance higher than that of the optical waveguide. The optical waveguide is formed by thermal diffusion or a chemical reaction. This optical waveguide device is affected little by the optical damage and can be manufactured easily.

83. 发明授权

US4894742A Thin-film laminated magnetic heads of Fe-Si-Al alloy 失效
标题翻译： Fe-Si-Al合金薄膜层压磁头
公开(公告)号：US4894742A
公开(公告)日：1990-01-16
申请号：US915299
申请日：1986-10-03
申请人： Kazuhiro Saito , Taiichi Mori
发明人： Kazuhiro Saito , Taiichi Mori
IPC分类号： C22C38/00 , C22C38/06 , C23C14/40 , G11B5/147 , G11B5/31 , H01F10/14 , H01F41/18
CPC分类号： G11B5/313 , G11B5/147 , G11B5/3163 , H01F10/145 , H01F10/265 , H01F41/18 , Y10T29/49043 , Y10T29/49055
摘要： A magnetic film of Fe-Si-Al alloy comprises a substrate and an Fe-Si-Al alloy film in which argon is entrapped. A thin-film laminated magnetic head comprises a pair of opposed substrates, and alternately laminated Fe-Si-Al alloy films entrapping argon therein and non-magnetic insulating films between the substrates. In the magnetic film and the head the substrates have a thermal expansion coefficient lower than that of the Fe-Si-Al alloy films and the amount of argon entrapped in the alloy films is controlled within the range of about 0.01 to about 0.3 wt. % so that internal stresses in the alloy films are substantially zeroed.

84. 发明授权

US4846948A Method of producing magnetic films of Fe-Si-Al alloy 失效
标题翻译：制备Fe-Si-Al合金磁膜的方法
公开(公告)号：US4846948A
公开(公告)日：1989-07-11
申请号：US117584
申请日：1987-11-05
申请人： Kazuhiro Saito , Taiichi Mori
发明人： Kazuhiro Saito , Taiichi Mori
IPC分类号： C22C38/00 , C22C38/06 , C23C14/40 , G11B5/147 , G11B5/31 , H01F10/14 , H01F41/18
CPC分类号： G11B5/313 , G11B5/147 , G11B5/3163 , H01F10/145 , H01F10/265 , H01F41/18 , Y10T29/49043 , Y10T29/49055
摘要： A method of producing a magnetic film of Fe-Si-Al alloy in which argon is entrapped, by using a DC magnetron sputtering apparatus to apply RF bias to a substrate thereby depositing a Fe-Si-Al alloy film on the substrate. The alloy film produced has a thermal expansion coefficient of 110.times.10.sup.-7 to 170.times.10.sup.-7 .degree. C..sup.-1 and the substrate has a thermal expansion coefficient of 100.times.10.sup.-7 to 135.times.10.sup.-7 .degree. C..sup.-1. The amount of argon entrapped in the alloy film is controlled within the range of 0.01 o 0.3 weight percent so as to substantially zero the internal stresses in the alloy film.
摘要翻译：通过使用DC磁控溅射装置对基板施加RF偏压来制造其中氩被截留的Fe-Si-Al合金的磁膜的方法，从而在基板上沉积Fe-Si-Al合金膜。所制造的合金膜的热膨胀系数为110×10 -7〜170×10 -7℃-1，基板的热膨胀系数为100×10 -7〜135×10 -7℃-1。将合金膜中夹带的氩的量控制在0.01〜0.3重量％的范围内，以使合金膜中的内应力基本为零。

85. 发明授权

US3635811A Method of applying a coating 失效
标题翻译：涂布方法
公开(公告)号：US3635811A
公开(公告)日：1972-01-18
申请号：US3635811D
申请日：1967-11-06
申请人： WARNER LAMBERT CO
发明人： LANE GEORGE C
IPC分类号： C23C14/40 , B05D1/00 , B05D5/08 , B05D7/24 , B26B20060101 , B26B19/00 , B26B21/54 , C23C14/12 , C23C14/34 , C23C14/50 , H01J37/34 , C23C15/00
CPC分类号： B05D5/083 , B05D1/62 , B26B21/54 , C23C14/12 , C23C14/34 , C23C14/505 , H01J37/34
摘要： An apparatus for applying a coating material to a substrate such as a razor blade, comprising a drum unit having a plurality of driven hub assemblies, each of which supports carrier means for carrying a large number of razor blades, and in which the hubs are driven, for example, by an epicyclic gear or chain mechanism, so as to expose the desired portions of the carriers, in a desired timed relation, to a coating material which is caused to emanate from a fixed source. The source comprises a so-called sputtering module including housing having, at the top part thereof, a pair of angled target plates from which the coating material is taken, and, at the bottom thereof, an opening past which the carriers are moved by the drum. By ''''sputtering'''' as used herein, is meant the slow disintegration of a target under the bombardment of ionized gas molecules, and, more particularly, the disintegration of a coating material which is placed on the target and transferred to a substrate after being ''''sputtered'''' from the target. The coating material is moved from the target plates to the substrate by a so-called ''''RF induced plasma sputtering,'''' process. In this process, with the apparatus and materials in a very high vacuum, a high radio frequency, (''''R.F.'''') is impressed across two electrode plates, each of which is disposed immediately behind the target plates, and each of which attains a high negative space charge. Thereafter, a normally inert gas, such as argon is introduced to the area between the plates, ionized, by bombardment with high velocity electrons, and theresulting plasma particles strike the target plates containing the coating material, freeing or ''''sputtering'''' it therefrom, in atomic or molecular sized particles, which are then attracted to the grounded potential substrate and are received and firmly bound thereon to form a coating of extreme smoothness and adhesion. In one embodiment, a metal coating is sputtered onto the edge portions of razor blades, and in other embodiments, organic polymers or other high-molecular weight coatings are transferred to a substrate, in some cases with simultaneous partial chemical breakdown, rearrangement, or other chemical or physical reaction during the sputtering process, and in still further embodiments, metal oxides, alloys, or other metal compounds are transferred, or simultaneously formed and transferred.

86. 发明公开

KR1019980086497A 스퍼터링장치 失效
公开(公告)号：KR1019980086497A
公开(公告)日：1998-12-05
申请号：KR1019980003965
申请日：1998-02-11
申请人： 캐논 아네르바 가부시키가이샤
发明人： 고바야시마사히코 , 누마자와요이치로
IPC分类号： C23C14/24 , C23C14/40
摘要： 애스펙트트비 4 이상의 홀의 내면에 보텀 커버리지율 좋게 성막을 행할 수 있도록 한다.
티탄 등의 금속제의 타겟(2)을 스퍼터하여 기판(50)에 소정의 박막을 작성하는 스퍼터챔버내에 소정의 가스를 도입하는 가스도입수단(4)은 타겟(2)으로부터 방출되는 스퍼터입자에 반응하여 홀(500)의 측면(501)에 대한 부착성이 스퍼터입자 단체의 경우보다도 보다 낮고 또한 홀(500)의 저면(502)에서 해리가능한 화합물을 생성하는 수소 등의 반응성 가스를 도입하는 것이 가능하다. 좁은 홀(500)의 저면(502)까지 효율적으로 스퍼터입자가 도달할 수 있기 때문에, 홀(500)의 저면(502)에서의 막퇴적이 촉진되어 보텀 커버리지율이 향상된다.

87. 发明授权

US08492182B2 Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip 有权
标题翻译：用于制造发光半导体芯片的方法，用于制造转换晶片和发光半导体芯片的方法
公开(公告)号：US08492182B2
公开(公告)日：2013-07-23
申请号：US13098240
申请日：2011-04-29
申请人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
发明人： Norwin Von Malm , Madis Raukas , Darshan Kundaliya
IPC分类号： H01L33/50 , C23C14/40
CPC分类号： H05B33/10 , H01L27/156 , H01L2933/0041
摘要： A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 μm. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.
摘要翻译：提供了一种发光半导体芯片，所述半导体芯片包括具有至少两个电隔离子区域的像素区域的半导体本体，每个子区域包括有源层，其在操作期间产生第一波长范围的电磁辐射，在至少一个子区域的辐射发射区域上分开制造的陶瓷转换管芯，所述转换管芯被配置为将第一波长范围的辐射转换成第二波长范围的电磁辐射，其中转换管芯的宽度不超过100个妈妈。此外，提供了一种制造发光半导体芯片的方法和用于制造转换晶片的方法。

88. 发明申请

US20090242392A1 Stress adjustment in reactive sputtering 有权
公开(公告)号：US20090242392A1
公开(公告)日：2009-10-01
申请号：US12411301
申请日：2009-03-25
申请人： Pavel N. Laptev , Valery Felmetsger
发明人： Pavel N. Laptev , Valery Felmetsger
IPC分类号： C23C14/40
CPC分类号： C23C14/352 , C23C14/0617 , C23C14/54
摘要： In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.

89. 发明申请

US20050115827A1 Multi-cathode ionized physical vapor deposition system 审中-公开
标题翻译：多阴极电离物理气相沉积系统
公开(公告)号：US20050115827A1
公开(公告)日：2005-06-02
申请号：US10949335
申请日：2004-09-27
申请人： Sunil Wickramanayaka , Naoki Watanabe
发明人： Sunil Wickramanayaka , Naoki Watanabe
IPC分类号： C23C14/34 , C23C14/04 , C23C14/22 , C23C14/35 , C23C14/40 , H01J37/34 , H01L21/285 , H01L21/31 , C23C14/32
CPC分类号： C23C14/345 , C23C14/046 , C23C14/225 , C23C14/352 , H01J37/3402 , H01J37/3429
摘要： A multi-cathode ionized physical vapor deposition system includes a reactor in which a wafer holder is arranged at a bottom wall, and at least two angled cathodes opposite a wafer are arranged at a top wall, each of the cathodes is supplied with a RF current via a matching circuit, and a pressure control mechanism including gas inlets and a gas outlet. In the system, an inner pressure of the reactor is controlled to be relatively high pressure by the pressure control mechanism. Thus, the system can form better side-wall and bottom coverage in patterned holes or trenches on the wafer surface using the atoms sputtered on each of the angled multi-cathodes.
摘要翻译：多阴极电离物理气相沉积系统包括反应器，其中晶片保持器布置在底壁处，并且至少两个与晶片相对的成角度的阴极布置在顶壁处，每个阴极被提供有RF电流通过匹配电路和包括气体入口和气体出口的压力控制机构。在该系统中，通过压力控制机构将反应器的内部压力控制为相对较高的压力。因此，使用溅射在每个倾斜多阴极上的原子，系统可以在晶片表面上的图案化的孔或沟槽中形成更好的侧壁和底部覆盖。

90. 发明授权

US6077402A Central coil design for ionized metal plasma deposition 失效
标题翻译：用于电离金属等离子体沉积的中心线圈设计
公开(公告)号：US6077402A
公开(公告)日：2000-06-20
申请号：US857719
申请日：1997-05-16
申请人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
发明人： Liubo Hong , Hougong Wang , Gongda Yao , Zheng Xu
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
摘要翻译：在等离子体发生装置中，线圈位于靶和工件之间，以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘工件。因此，已经发现可以提高沉积的均匀性。在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

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