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1. 发明申请

US20050115827A1 Multi-cathode ionized physical vapor deposition system 审中-公开
标题翻译：多阴极电离物理气相沉积系统
公开(公告)号：US20050115827A1
公开(公告)日：2005-06-02
申请号：US10949335
申请日：2004-09-27
申请人： Sunil Wickramanayaka , Naoki Watanabe
发明人： Sunil Wickramanayaka , Naoki Watanabe
IPC分类号： C23C14/34 , C23C14/04 , C23C14/22 , C23C14/35 , C23C14/40 , H01J37/34 , H01L21/285 , H01L21/31 , C23C14/32
CPC分类号： C23C14/345 , C23C14/046 , C23C14/225 , C23C14/352 , H01J37/3402 , H01J37/3429
摘要： A multi-cathode ionized physical vapor deposition system includes a reactor in which a wafer holder is arranged at a bottom wall, and at least two angled cathodes opposite a wafer are arranged at a top wall, each of the cathodes is supplied with a RF current via a matching circuit, and a pressure control mechanism including gas inlets and a gas outlet. In the system, an inner pressure of the reactor is controlled to be relatively high pressure by the pressure control mechanism. Thus, the system can form better side-wall and bottom coverage in patterned holes or trenches on the wafer surface using the atoms sputtered on each of the angled multi-cathodes.
摘要翻译：多阴极电离物理气相沉积系统包括反应器，其中晶片保持器布置在底壁处，并且至少两个与晶片相对的成角度的阴极布置在顶壁处，每个阴极被提供有RF电流通过匹配电路和包括气体入口和气体出口的压力控制机构。在该系统中，通过压力控制机构将反应器的内部压力控制为相对较高的压力。因此，使用溅射在每个倾斜多阴极上的原子，系统可以在晶片表面上的图案化的孔或沟槽中形成更好的侧壁和底部覆盖。

2. 发明申请

US20090178917A1 METHOD OF SPUTTERING A HIGH-K DIELECTRIC MATERIAL 审中-公开
标题翻译：溅射高K电介质材料的方法
公开(公告)号：US20090178917A1
公开(公告)日：2009-07-16
申请号：US12405775
申请日：2009-03-17
申请人： Sunil Wickramanayaka , Naoki Watanabe
发明人： Sunil Wickramanayaka , Naoki Watanabe
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/046 , C23C14/225 , C23C14/352 , H01J37/3402 , H01J37/3429
摘要： A multi-cathode ionized physical vapor deposition system includes a reactor in which a wafer holder is arranged at a bottom wall, and at least two angled cathodes opposite a wafer are arranged at a top wall, each of the cathodes is supplied with a RF current via a matching circuit, and a pressure control mechanism including gas inlets and a gas outlet. In the system, an inner pressure of the reactor is controlled to be relatively high pressure by the pressure control mechanism. Thus, the system can form better side-wall and bottom coverage in patterned holes or trenches on the wafer surface using the atoms sputtered on each of the angled multi-cathodes.
摘要翻译：多阴极电离物理气相沉积系统包括反应器，其中晶片保持器布置在底壁处，并且至少两个与晶片相对的成角度的阴极布置在顶壁处，每个阴极被提供有RF电流通过匹配电路和包括气体入口和气体出口的压力控制机构。在该系统中，通过压力控制机构将反应器的内部压力控制为相对较高的压力。因此，使用溅射在每个倾斜多阴极上的原子，系统可以在晶片表面上的图案化的孔或沟槽中形成更好的侧壁和底部覆盖。

3. 发明授权

US07791857B2 Electrostatic chuck device 有权
公开(公告)号：US07791857B2
公开(公告)日：2010-09-07
申请号：US12318488
申请日：2008-12-30
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/00
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

4. 发明授权

US07623334B2 Electrostatic chuck device 有权
标题翻译：静电吸盘装置
公开(公告)号：US07623334B2
公开(公告)日：2009-11-24
申请号：US10462765
申请日：2003-06-17
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/00
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.
摘要翻译：一种静电吸盘装置，其具有表面压花的电介质板，以给予多个突起，电极和外部电源，其中所述多个突起的基板支撑表面被导体布线覆盖，并且所述导体布线电连接多个突起的基板支撑表面。在基板处理时，当压花突起接触基板的背面时，由于电荷的迁移，基板的背面和导体布线的潜力也相同，因此在基板和与其接触的导体布线被防止，并且防止了两者之间的摩擦状态。由此，静电卡盘装置减少了颗粒的产生，容易且稳定地除去和输送基板，实现了高产率和系统运行速度。

5. 发明授权

US08986522B2 Angled sputtering physical vapor deposition apparatus with wafer holder and wafer holder for an angled sputtering physical vapor deposition apparatus 有权
标题翻译：具有晶片保持架的倾斜溅射物理气相沉积设备和用于倾斜溅射物理气相沉积设备的晶片保持器
公开(公告)号：US08986522B2
公开(公告)日：2015-03-24
申请号：US13169831
申请日：2011-06-27
申请人： Sunil Wickramanayaka
发明人： Sunil Wickramanayaka
IPC分类号： C23C14/34 , H01L21/687 , H01J37/34 , C23C14/50 , C23C14/04 , C23C14/22 , H01L21/67
CPC分类号： H01L21/68735 , C23C14/04 , C23C14/225 , C23C14/50 , C23C14/505 , H01J37/3417 , H01L21/67103 , H01L21/67109
摘要： A wafer holder including a wafer stage and a wafer stage outer-ring surrounding the wafer stage wherein the wafer stage has a diameter smaller than the diameter of a wafer loaded on the wafer stage, the wafer stage outer-ring has an inner diameter at the upper side of the outer-ring which is larger than the diameter of the wafer loaded on the wafer stage, and the upper surface of the outer-ring lies above the upper surface of the wafer loaded on the wafer stage.
摘要翻译：一种晶片保持器，包括晶片台和围绕晶片台的晶片台外环，其中晶片台的直径小于装载在晶片台上的晶片的直径，晶片台外圈的直径在外圈的上侧大于加载在晶片台上的晶片的直径，并且外圈的上表面位于装载在晶片台上的晶片的上表面的上方。

6. 发明授权

US07816283B2 Method of depositing a higher permittivity dielectric film 有权
标题翻译：沉积更高介电常数介电膜的方法
公开(公告)号：US07816283B2
公开(公告)日：2010-10-19
申请号：US11141044
申请日：2005-06-01
申请人： Sunil Wickramanayaka , Naoki Yamada
发明人： Sunil Wickramanayaka , Naoki Yamada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02329 , C23C14/024 , C23C14/0641 , C23C14/225 , C23C14/5853 , H01L21/02181 , H01L21/02266 , H01L21/02326 , H01L21/28185 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L21/823857
摘要： A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (AxNy) on the silicon layer, wherein the specific element (A) and nitrogen (N) in the nitride film (AxNy) have a predetermined fraction relationship between x and y; a second step of oxidizing the nitride film in a oxygen atmosphere to form the dielectric film (AON).
摘要翻译：在晶片的掺杂硅或硅化合物层上沉积高介电常数介电膜的方法。该方法包括对诸如铪Hf的特定元素（A）进行氮化以在硅层上形成氮化物膜（AxNy）的第一步骤，其中氮化物膜（AxNy）中的特定元素（A）和氮（N）在x和y之间具有预定的分数关系; 在氧气氛中氧化氮化物膜以形成电介质膜（AON）的第二步骤。

7. 发明申请

US20090122459A1 Electrostatic chuck device 有权
公开(公告)号：US20090122459A1
公开(公告)日：2009-05-14
申请号：US12318488
申请日：2008-12-30
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01L21/683
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

8. 发明授权

US07848077B2 Electrostatic chuck device 有权
公开(公告)号：US07848077B2
公开(公告)日：2010-12-07
申请号：US12588809
申请日：2009-10-28
申请人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
发明人： Shigeru Mizuno , Masahito Ishihara , Sunil Wickramanayaka , Naoki Miyazaki
IPC分类号： H01T23/00
CPC分类号： H01L21/6875 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

9. 发明授权

US07164571B2 Wafer stage with a magnet 有权
标题翻译：晶圆台带磁铁
公开(公告)号：US07164571B2
公开(公告)日：2007-01-16
申请号：US10906435
申请日：2005-02-19
申请人： Sunil Wickramanayaka , Yoshikazu Nozaki
发明人： Sunil Wickramanayaka , Yoshikazu Nozaki
IPC分类号： H01L21/683 , H01T23/00 , H01L21/00 , H01L21/302 , H01L21/461 , H01L31/306 , C23F1/00
CPC分类号： H01L21/68721 , H01L21/68735 , H01L2924/0002 , H01L2924/00
摘要： A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.
摘要翻译：一种用于将晶片保持在等离子体处理系统的腔室中的晶片台，所述晶片台包括其上放置有晶片的电极，所述电极被供应到所述电极，所述电极的直径大于所述晶片的直径，分别布置在所述电极的最外区域和所述磁体上的多个磁体被布置成使得交替的磁极面向腔室的内部，并且外环设置在所述晶片周围，外环具有磁性金属环下侧

10. 发明申请

US20050185359A1 Wafer Stage 有权
标题翻译：晶圆阶段
公开(公告)号：US20050185359A1
公开(公告)日：2005-08-25
申请号：US10906435
申请日：2005-02-19
申请人： Sunil Wickramanayaka , Yoshikazu Nozaki
发明人： Sunil Wickramanayaka , Yoshikazu Nozaki
IPC分类号： H05H1/46 , G03F7/20 , H01H1/00 , H01L21/3065 , H01L21/311 , H01L21/68 , H01L21/683 , H01L21/687 , H01L23/34 , H02B1/00 , H05F1/00
CPC分类号： H01L21/68721 , H01L21/68735 , H01L2924/0002 , H01L2924/00
摘要： A wafer stage for holding a wafer in a chamber of a plasma processing system, the wafer stage includes an electrode on which a wafer is placed, to which electrical current is supplied, a diameter of the electrode is larger than a diameter of said wafer, a plurality of magnets separately arranged on an outermost region of said electrode and said magnets are arranged such that alternate magnetic poles face towards the inside of the chamber, and an outer-ring placed around said wafer, the outer ring having a magnetic metal ring at a lower side.
摘要翻译：一种用于将晶片保持在等离子体处理系统的腔室中的晶片台，所述晶片台包括其上放置有晶片的电极，所述电极被供应到所述电极，所述电极的直径大于所述晶片的直径，分别布置在所述电极的最外区域和所述磁体上的多个磁体被布置成使得交替的磁极面向腔室的内部，并且外环设置在所述晶片周围，外环具有磁性金属环下侧

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