会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 81. 发明授权
    • Apparatus and method for in-situ cleaning of resist outgassing windows
    • 抗蚀剂除气窗的原位清洗装置及方法
    • US06192897B1
    • 2001-02-27
    • US09238210
    • 1999-01-27
    • Leonard E. KlebanoffSteven J. Haney
    • Leonard E. KlebanoffSteven J. Haney
    • B08B700
    • B08B7/00Y10S134/902
    • An apparatus and method for in-situ cleaning of resist outgassing windows. The apparatus includes a chamber located in a structure, with the chamber having an outgassing window to be cleaned positioned in alignment with a slot in the chamber, whereby radiation energy passes through the window, the chamber, and the slot onto a resist-coated wafer mounted in the structure. The chamber is connected to a gas supply and the structure is connected to a vacuum pump. Within the chamber are two cylindrical sector electrodes and a filament is electrically connected to one sector electrode and a power supply. In a first cleaning method the sector electrodes are maintained at the same voltage, the filament is unheated, the chamber is filled with argon (Ar) gas under pressure, and the window is maintained at a zero voltage, whereby Ar ions are accelerated onto the window surface, sputtering away carbon deposits that build up as a result of resist outgassing. A second cleaning method is similar except oxygen gas (O2) is admitted to the chamber instead of Ar. These two methods can be carried out during lithographic operation. A third method, carried out during a maintenance period, involves admitting CO2 into the chamber, heating the filament to a point of thermionic emission, the sector electrodes are at different voltages, excited CO2 gas molecules are created which impact the carbon contamination on the window, and gasify it, producing CO gaseous products that are pumped away.
    • 一种用于原位清洁抗蚀剂除气窗的设备和方法。 该装置包括位于结构中的腔室,其中腔室具有待清洁的除气窗口,其定位成与腔室中的槽对准,由此辐射能量通过窗口,腔室和狭缝穿过抗蚀剂涂覆的晶片 安装在结构中。 该室连接到气体源,该结构连接到真空泵。 室内有两个圆柱形扇形电极,灯丝与一个扇形电极和一个电源电连接。 在第一清洁方法中,扇形电极被保持在相同的电压,灯丝未被加热,在压力下充满氩(Ar)气体,并且窗口保持在零电压,由此Ar离子被加速到 窗口表面,溅射由于抗蚀剂除气而积聚的碳沉积物。 除了氧气(O2)进入腔室而不是Ar之外,第二种清洁方法是类似的。 这两种方法可以在光刻操作过程中进行。 在维护期间进行的第三种方法是将二氧化碳进入腔室,将灯丝加热到热电子发射点,扇形电极处于不同的电压,产生激发的CO2气体分子,影响窗口上的碳污染 ,并将其气化,产生被抽出的CO气体产物。
    • 82. 发明授权
    • Rear scrub dual drive means for a sugar beet harvester
    • 用于甜菜收获机的后刷双驱动装置
    • US06168671A
    • 2001-01-02
    • US09189729
    • 1998-11-10
    • Gary G. PetersonMichael T. SprengerAdam R. MenzeTravis W. Giffey
    • Gary G. PetersonMichael T. SprengerAdam R. MenzeTravis W. Giffey
    • B08B700
    • A01D17/101
    • A rear scrub dual drive for a sugar beet harvester includes functionally-independent first and second variable speed actuators connected to respective first and second drive shafts of a rear scrub and further includes a fluid supply member, pump, and flow control members for energizing the actuators and controlling the speeds at which they can operate to effectively vary the relative speeds of first and second conveyors which are driven by the respective first and second actuators and which are used to scrub and move the harvested sugar beets. The ability to quickly and conveniently change the speeds of the conveyors on the go without replacing and remounting any parts on the rear scrub on the go allows the user to better match the conditions the user may be presented with while harvesting sugar beets.
    • 一种用于甜菜收割机的后洗涤双驱动器包括连接到后擦洗器的相应的第一和第二驱动轴的功能上独立的第一和第二可变速度致动器,并且还包括流体供应构件,泵和用于激励致动器的流量控制构件 并且控制它们可以操作的速度以有效地改变由相应的第一和第二致动器驱动并用于擦洗和移动收获的甜菜的第一和第二输送机的相对速度。 随时随地更换传送带的速度,无需更换和重新安装后部擦洗物上的任何部件即可快速方便地更改使用者在收获甜菜时更好地匹配用户可能呈现的条件。
    • 83. 发明授权
    • Copper cleaning compositions, processes and products derived therefrom
    • 铜清洗组合物,由其衍生的工艺和产品
    • US06830627B1
    • 2004-12-14
    • US09274935
    • 1999-03-23
    • Kathleen L. CovertJohn M. LaufferPeter A. Moschak
    • Kathleen L. CovertJohn M. LaufferPeter A. Moschak
    • B08B700
    • C11D7/10C11D7/08C11D7/16C11D11/0047C23F1/18C23G1/103H05K1/167H05K3/383H05K2203/0796
    • The present invention is a persulfate microetchant composition especially useful for removing impurities from copper surfaces during fabrication of microelectronic packages. The microetchant formulation is characterized by its ability to selectively clean copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this microetchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate microetchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 100 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.
    • 本发明是一种特别适用于在制造微电子封装期间从铜表面去除杂质的过硫酸盐微蚀剂组合物。 微蚀剂制剂的特征在于其在镍,镍 - 磷和贵金属合金存在下选择性地清洗铜的能力。 此外,在该微蚀刻 - 衬底系统中不会发生有害的电偶蚀刻,因此基本上不会发生铜的底切。 高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装,特别是较高密度电路的设计特征的显着改进。 过硫酸盐微提取剂组合物用酸和磷酸盐稳定,以提供稳定,快速作用,环境可接受,具有高容量的方法,并且可以在室温下进行。 优选的蚀刻剂组合物为100g /升过硫酸钠,3体积%磷酸和0.058摩尔磷酸氢二钠。
    • 85. 发明授权
    • Methods of cleaning vaporization surfaces
    • 清洁蒸发表面的方法
    • US06796313B2
    • 2004-09-28
    • US09935465
    • 2001-08-21
    • Eugene P. Marsh
    • Eugene P. Marsh
    • B08B700
    • B05D1/62C23C16/4405C23C16/4481Y10S438/905
    • In one aspect, the invention encompasses a method of utilizing a vaporization surface as an electrode to form a plasma within a vapor forming device. In another aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma.
    • 一方面,本发明包括利用汽化表面作为电极在蒸汽形成装置内形成等离子体的方法。 另一方面,本发明包括化学气相沉积的方法。 提供蒸发表面并加热。 至少一种材料流过加热表面以蒸发材料。 在蒸发期间在蒸发表面上形成沉积物。 然后将汽化表面用作电极以形成等离子体,并且用等离子体去除沉积物的至少一部分。
    • 87. 发明授权
    • Plasma cleaning method and placement area protector used in the method
    • 方法中使用的等离子体清洁方法和放置区域保护器
    • US06769439B2
    • 2004-08-03
    • US09874325
    • 2001-06-06
    • Takahiro Tamura
    • Takahiro Tamura
    • B08B700
    • H01L21/67069C23C16/4405H01J37/32082H01J37/32862Y10T428/21
    • In a vacuum processing system used in a semiconductor device manufacturing process, a plate-shaped placement area protector made of a dielectric material having a surface of dimensions and shape matching those of a surface of a substrate or an area for substrate placement in a surface of a substrate stage in place of the substrate. An etching gas is introduced into a vacuum vessel by a gas introduction mechanism and predetermined high-frequency electromagnetic wave power is applied to the substrate stage from a stage high-frequency electromagnetic wave power source. Plasma is formed in the proximity of the surface of the substrate stage by the applied high-frequency electromagnetic wave power, and a deposited film on the surface of the substrate stage is removed with the plasma. The placement area protector has the same electrical properties as the deposited film.
    • 在半导体器件制造工艺中使用的真空处理系统中,由电介质材料制成的板状放置区域保护器,其表面的尺寸和形状与基板的表面或基板的表面的面积相匹配, 衬底台代替衬底。 通过气体引入机构将蚀刻气体引入真空容器中,并且从级高频电​​磁波电源将预定的高频电磁波功率施加到衬底台。 通过施加的高频电磁波功率在衬底台的表面附近形成等离子体,并且用等离子体去除衬底载台的表面上的沉积膜。 放置区域保护膜具有与沉积膜相同的电性能。