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    • 82. 发明申请
    • ELECTRIC POWER STEERING CONTROL APPARATUS
    • 电动转向控制装置
    • US20090000857A1
    • 2009-01-01
    • US12132209
    • 2008-06-03
    • Akinobu SugiyamaTakanori MatsunagaHideyuki TanakaHiroyuki Kozuki
    • Akinobu SugiyamaTakanori MatsunagaHideyuki TanakaHiroyuki Kozuki
    • B62D5/04
    • B62D5/0463B62D5/0472
    • An electric power steering control apparatus can reduce a steering vibration such as shimmy vibration generated due to the structure of a vehicle without adding new mechanism elements. The apparatus includes a torque sensor for detecting steering torque generated by a driver, a torque controller for calculating an assist torque current for assisting the steering torque based on the detected steering torque, a vehicle speed detector for detecting the speed of the vehicle, a specific frequency detector for detecting a specific frequency from the detected vehicle speed, a motor angular velocity calculator for calculating a motor angular velocity from a motor angle detected by an angle detector, a phase compensator for converting a vibration frequency of the motor angular velocity, and a vibration suppression current calculator for calculating a vibration suppression current to suppress the steering vibration from respective output signals of the phase compensator and the specific frequency detector.
    • 电动助力转向控制装置可以减少由于车辆结构而产生的振动振动的转向振动,而不增加新的机构元件。 该装置包括用于检测由驾驶员产生的转向转矩的转矩传感器,用于基于检测到的转向转矩计算用于辅助转向转矩的辅助转矩电流的转矩控制器,用于检测车辆速度的车速检测器, 频率检测器,用于从检测到的车速检测特定频率;马达角速度计算器,用于从由角度检测器检测的马达角度计算马达角速度,用于转换马达角速度的振动频率的相位补偿器,以及 振动抑制电流计算器,用于计算振动抑制电流,以抑制来自相位补偿器和特定频率检测器的各个输出信号的转向振动。
    • 86. 发明授权
    • Non-volatile memory and the fabrication method
    • 非易失性存储器及其制造方法
    • US07394090B2
    • 2008-07-01
    • US11798364
    • 2007-05-14
    • Kiyoyuki MoritaNoboru YamadaAkihito MiyamotoTakashi OhtsukaHideyuki Tanaka
    • Kiyoyuki MoritaNoboru YamadaAkihito MiyamotoTakashi OhtsukaHideyuki Tanaka
    • H01L47/00
    • G11C13/0004G11C14/009H01L27/1104H01L27/24H01L45/04H01L45/145
    • A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
    • 一种非易失性存储器,包括:第一基板(100)和第二基板(110),所述第一基板(100)具有布置成矩阵的多个开关元件(4),并且多个第一电极(18)被连接 至所述开关元件(4),所述第二基板(110)具有导电膜(32)以及其电阻值通过施加电脉冲而改变的记录层(34),其中所述多个第一电极(18)为 由记录层(34)整体覆盖,记录层(34)由此保持在多个第一电极(18)和导电膜(32)之间; 所述第一基板(100)还包括第二电极(22),所述第二电极(22)电连接到所述导电膜(32),其电压保持在设定电平,同时向所述记录层施加电流( 34)。 这种非易失性存储器以低成本实现高集成度。
    • 88. 发明申请
    • Non-volatile memory and the fabrication method
    • 非易失性存储器及其制造方法
    • US20070210362A1
    • 2007-09-13
    • US11798364
    • 2007-05-14
    • Kiyoyuki MoritaNoboru YamadaAkihito MiyamotoTakashi OhtsukaHideyuki Tanaka
    • Kiyoyuki MoritaNoboru YamadaAkihito MiyamotoTakashi OhtsukaHideyuki Tanaka
    • H01L27/11
    • G11C13/0004G11C14/009H01L27/1104H01L27/24H01L45/04H01L45/145
    • A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
    • 一种非易失性存储器,包括:第一基板(100)和第二基板(110),所述第一基板(100)具有布置成矩阵的多个开关元件(4),并且多个第一电极(18)被连接 至所述开关元件(4),所述第二基板(110)具有导电膜(32)以及其电阻值通过施加电脉冲而改变的记录层(34),其中所述多个第一电极(18)为 由记录层(34)整体覆盖,记录层(34)由此保持在多个第一电极(18)和导电膜(32)之间; 所述第一基板(100)还包括第二电极(22),所述第二电极(22)电连接到所述导电膜(32),其电压保持在设定电平,同时向所述记录层施加电流( 34)。 这种非易失性存储器以低成本实现高集成度。
    • 90. 发明授权
    • Non-volatile flip flop
    • 非易失性触发器
    • US07206217B2
    • 2007-04-17
    • US10754058
    • 2004-01-09
    • Takashi OhtsukaHideyuki Tanaka
    • Takashi OhtsukaHideyuki Tanaka
    • G11C11/40
    • G11C14/0072G11C8/16G11C13/0004G11C14/009H01L21/28291H01L27/101H01L27/11H03K3/356008
    • A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).
    • 根据本发明的非易失性触发器包括:触发器部分(4),具有用于存储一对反逻辑数据元素的一对存储器节点(5,6); 以及一对非易失性电阻变化元件(11,12),它们分别通过开关元件(9,10)连接到一对存储器节点(5,6),并且其电阻变化以便保持, 其特征在于,在存储操作中,所述一对非易失性电阻变化元件(11,12)的电阻可以根据所述一对存储器节点(5,6)的各自的电位而变化,并且在回调操作中, 可以根据所述一对非易失性电阻变化元件(11,12)之间的电阻差分别将所述一对存储器节点(5,6)置于电位上。