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81. 发明申请

US20120313860A1 Metallic Nanoparticle Pressure Sensor 有权
标题翻译：金属纳米粒子压力传感器
公开(公告)号：US20120313860A1
公开(公告)日：2012-12-13
申请号：US13157206
申请日：2011-06-09
申请人： Akinori Hashimura , Liang Tang , Apostolos T. Voutsas
发明人： Akinori Hashimura , Liang Tang , Apostolos T. Voutsas
IPC分类号： G06F3/041 , G01L1/10 , B82Y35/00
CPC分类号： B82Y15/00 , G01L1/20 , G06F3/045
摘要： An electrical pressure sensor is provided with a method for measuring pressure applied to a sensor surface. The method provides an electrical pressure sensor including a sealed chamber with a top surface, first electrode, second electrode, an elastic polymer medium, and metallic nanoparticles distributed in the elastic polymer medium. When the top surface of the sensor is deformed in response to an applied pressure, the elastic polymer medium is compressed. In response to decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance between metallic nanoparticles, the electrical resistance is decreased between the first and second electrodes through the elastic polymer medium.
摘要翻译：电压传感器设置有用于测量施加到传感器表面的压力的方法。该方法提供一种电压传感器，其包括具有顶表面的密封室，第一电极，第二电极，弹性聚合物介质和分布在弹性聚合物介质中的金属纳米颗粒。当传感器的顶表面响应于施加的压力而变形时，弹性聚合物介质被压缩。响应于减少金属纳米粒子与金属纳米粒子之间的金属纳米粒子的平均距离，通过弹性聚合物介质在第一和第二电极之间的电阻降低。

82. 发明授权

US08270066B2 Optical spectrum splitting for black color display 有权
标题翻译：用于黑色显示的光谱分割
公开(公告)号：US08270066B2
公开(公告)日：2012-09-18
申请号：US12873138
申请日：2010-08-31
申请人： Liang Tang , Akinori Hashimura , Apostolos T. Voutsas
发明人： Liang Tang , Akinori Hashimura , Apostolos T. Voutsas
IPC分类号： G02B26/00 , G02F1/1335
CPC分类号： G02F1/139 , B82Y20/00 , G02B6/005 , G02B6/1225 , G02B6/1226 , G02F1/134309 , G02F1/19 , G02F2201/02 , G02F2201/122 , G02F2202/32 , G02F2202/36 , G02F2203/10 , G02F2203/34 , G02F2203/62
摘要： A display device is provided for reflecting a black color, as enabled by an optical splitting photonic liquid crystal waveguide. Sets of top and bottom electrodes are formed in a periodic pattern. A first dielectric layer overlies the set of bottom electrodes, made from a liquid crystal (LC) material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the sets of top and bottom electrodes, and is in contact with the first dielectric layer. A voltage potential is applied between the top and bottom electrodes, generating an electric field. Dipole local orientation and non-orientation regions are created in the liquid crystal molecules in response to the electric field, and a wavelength of light outside the visible spectrum is reflected in response to optical spectrum splitting of the incident light.
摘要翻译：提供用于反射黑色的显示装置，如通过光分裂光子液晶波导所实现的。顶部和底部电极组以周期性图案形成。第一电介质层覆盖由具有对电场响应的偶极子的分子的液晶（LC）材料制成的一组底部电极。包括多个离散等离子体激元的等离子体激元层插入在顶部和底部电极组之间，并与第一介电层接触。在顶部和底部电极之间施加电压电位，产生电场。响应于电场在液晶分子中产生偶极局部取向和非取向区域，并且响应于入射光的光谱分解而反射可见光谱外的光的波长。

83. 发明申请

US20120050646A1 Scattering Tunable Display Using Reflective and Transmissive Modes of Illumination 审中-公开
标题翻译：使用反射和透射照明模式散射可调谐显示
公开(公告)号：US20120050646A1
公开(公告)日：2012-03-01
申请号：US12877017
申请日：2010-09-07
申请人： Jiandong Huang , Apostolos T. Voutsas
发明人： Jiandong Huang , Apostolos T. Voutsas
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/1334 , G02F1/133615 , G02F2001/133626 , G02F2201/58 , G09G3/3473 , G09G3/36 , G09G2300/0456 , G09G2300/046 , G09G2360/144
摘要： A scattering tunable display is provided that uses reflection and edge-lit waveguide transmission modes of illumination. A front panel is provided with an array of selectable display pixels arranged in a plurality of sequences. A backlight panel includes a plurality of edge-coupled waveguide pipes formed in a plurality of rows. Each waveguide pipe has an optical input connected to a corresponding light emitting diode (LED), and an optical output index-matched to a corresponding sequence of display pixels. A display pixel is enabled and ambient visible spectrum illumination is measured. In response to the measured ambient illumination being above a first minimum threshold, the display pixel is operated in a reflective illumination mode. In response to the measured ambient illumination being below the first minimum threshold, the display pixel is operated in a transmissive illumination mode.
摘要翻译：提供了一种使用反射和边缘照明的波导传输模式的散射可调显示器。前面板设置有以多个序列排列的可选显示像素阵列。背光面板包括形成为多行的多个边缘耦合波导管。每个波导管具有连接到相应的发光二极管（LED）的光学输入和与相应的显示像素序列相匹配的光学输出。启用显示像素并测量环境可见光谱照明。响应于所测量的环境照度高于第一最小阈值，显示像素以反射照明模式操作。响应于所测量的环境照度低于第一最小阈值，显示像素以透射照明模式操作。

84. 发明授权

US07999995B2 Full color range interferometric modulation 有权
标题翻译：全色范围干涉调制
公开(公告)号：US07999995B2
公开(公告)日：2011-08-16
申请号：US12568522
申请日：2009-09-28
申请人： Akinori Hashimura , Douglas J. Tweet , Apostolos T. Voutsas
发明人： Akinori Hashimura , Douglas J. Tweet , Apostolos T. Voutsas
IPC分类号： G02B26/00
CPC分类号： G02B26/001
摘要： A full color range analog controlled interferometric modulation device is provided. The device includes a transparent substrate, and a transparent fixed-position electrically conductive electrode with a bottom surface overlying the substrate. A transparent spacer overlies the fixed-position electrode, and an induced absorber overlies the spacer. An optically reflective electrically conductive moveable membrane overlies the induced absorber. A cavity is formed between the induced absorber and the moveable membrane having a maximum air gap dimension less than the spacer thickness. In one aspect, the distance from the top surface of the fixed-position electrode to a cavity lower surface is at least twice as great as the cavity maximum air gap dimension. In another aspect, at least one anti-reflective coating (ARC) layer is interposed between the substrate and the fixed-position electrode, and at least one ARC layer is interposed between the fixed-position electrode and the spacer.
摘要翻译：提供全彩色范围的模拟控制干涉式调制装置。该器件包括透明衬底和具有覆盖衬底的底表面的透明固定位置导电电极。透明间隔物覆盖固定位置电极，诱导吸收体覆盖在间隔物上。光反射导电的可移动膜覆盖在诱导的吸收体上。在诱导的吸收体和具有小于间隔物厚度的最大气隙尺寸的可移动膜之间形成空腔。在一个方面，从固定位置电极的顶表面到腔下表面的距离至少是腔最大气隙尺寸的两倍。另一方面，在基板和固定位置电极之间插入至少一个抗反射涂层（ARC）层，并且在固定位置电极和间隔物之间插入至少一个ARC层。

85. 发明申请

US20110109659A1 Plasmonic Electronic Skin 有权
标题翻译：等离子体电子皮肤
公开(公告)号：US20110109659A1
公开(公告)日：2011-05-12
申请号：US12836121
申请日：2010-07-14
申请人： Liang Tang , Akinori Hashimura , Apostolos T. Voutsas
发明人： Liang Tang , Akinori Hashimura , Apostolos T. Voutsas
IPC分类号： G09G5/10 , G02F1/1333
CPC分类号： G02F1/1334 , G02F1/23 , G02F2203/10 , G02F2203/34
摘要： A method is provided for color tuning a plasmonic device with a color tunable electronic skin. A plasmonic electronic skin is used, including a first substrate, a plasmonic structure, an electrically conductive transparent first electrode layer, an electrically conductive transparent second electrode layer, and a polymer-networked liquid crystal (PNLC) layer interposed between the first and second transparent electrode layers. In response to receiving a color tuning voltage, a full visible spectrum incident light, and a PNLC switch voltage, the plasmonic structure generates a first primary color. A primary color exhibits a single wavelength peak with a spectral full width at half magnitudes (FWHMs) in the visible spectrum of light. In response to receiving the PNLC switch voltage between the first and second electrode layers, the PNLC layer passes incident light.
摘要翻译：提供了一种用于颜色调节具有颜色可调电子皮肤的等离子体激元装置的方法。使用等离子体激元电子皮肤，包括第一衬底，等离子体激元结构，导电透明第一电极层，导电透明第二电极层和介于第一和第二透明第二电极层之间的聚合物网状液晶（PNLC）层电极层。响应于接收到调色电压，完全可见光入射光和PNLC开关电压，等离子体激元结构产生第一原色。原色在光的可见光谱中表现出具有半幅度的光谱全宽（FWHM）的单个波长峰。响应于在第一和第二电极层之间接收PNLC开关电压，PNLC层通过入射光。

86. 发明授权

US07902088B2 High quantum efficiency silicon nanoparticle embedded SiOXNY luminescence device 失效
标题翻译：高量子效率硅纳米颗粒嵌入式SiOXNY发光器件
公开(公告)号：US07902088B2
公开(公告)日：2011-03-08
申请号：US12249911
申请日：2008-10-11
申请人： Pooran Chandra Joshi , Jiandong Huang , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Jiandong Huang , Apostolos T. Voutsas
IPC分类号： H01L21/31 , H01L21/469 , H01J1/62 , H01J63/04
CPC分类号： C23C16/308 , B82Y20/00 , C23C16/28 , C23C16/505 , H01L31/0352 , H01L31/035236
摘要： A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.
摘要翻译：提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。

87. 发明申请

US20100151152A1 Non-Stoichiometric SiOxNy Optical Filter Fabrication 审中-公开
标题翻译：非化学计量的SiOxNy光学滤波器制造
公开(公告)号：US20100151152A1
公开(公告)日：2010-06-17
申请号：US12700395
申请日：2010-02-04
申请人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： C23C16/34 , C23C16/42 , B05D5/06
CPC分类号： G02B5/286 , Y10T428/259
摘要： A non-stoichiometric SiOXNY thin-film optical filter is provided. The filter is formed from a substrate and a first non-stoichiometric SiOX1NY1 thin-film overlying the substrate, where (X1+Y1 0). The first non-stoichiometric SiOX1NY1 thin-film has a refractive index (n1) in the range of about 1.46 to 3, and complex refractive index (N1=n1+ik1), where k1 is an extinction coefficient in a range of about 0 to 0.5. The first non-stoichiometric SiOX1NY1 thin-film may be either intrinsic or doped. In one aspect, the first non-stoichiometric SiOX1NY1 thin-film has nanoparticles with a size in the range of about 1 to 10 nm. A second non-stoichiometric SiOX2NY2 thin-film may overlie the first non-stoichiometric SiOX1NY1 thin-film, where Y1≠Y2. The second non-stoichiometric SiOX1NY1 thin-film may be intrinsic and doped. In another variation, a stoichiometric SiOX2NY2 thin-film, intrinsic or doped, overlies the first non-stoichiometric SiOX1NY1 thin-film.
摘要翻译：提供非化学计量的SiOXNY薄膜滤光片。滤光片由衬底和覆盖衬底的第一非化学计量的SiOX1NY1薄膜形成，其中（X1 + Y1 <2和Y1> 0）。第一非化学计量的SiOX1NY1薄膜的折射率（n1）在约1.46至3的范围内，复数折射率（N1 = n1 + ik1），其中k1是约0至 0.5。第一非化学计量的SiOX1NY1薄膜可以是固有的或掺杂的。在一个方面，第一非化学计量的SiOX1NY1薄膜具有尺寸在约1至10nm范围内的纳米颗粒。第二非化学计量的SiOX2NY2薄膜可以覆盖第一非化学计量的SiOX1NY1薄膜，其中Y1≠Y2。第二非化学计量的SiOX1NY1薄膜可以是固有的和掺杂的。在另一个实施方案中，本征或掺杂的化学计量的SiOX2NY2薄膜覆盖在第一非化学计量的SiOX1NY1薄膜上。

88. 发明申请

US20100047476A1 Silicon Nanoparticle Precursor 审中-公开
标题翻译：硅纳米粒子前体
公开(公告)号：US20100047476A1
公开(公告)日：2010-02-25
申请号：US12195673
申请日：2008-08-21
申请人： Jer-Shen Maa , Gregory S. Herman , Apostolos T. Voutsas
发明人： Jer-Shen Maa , Gregory S. Herman , Apostolos T. Voutsas
IPC分类号： B05D5/12 , H01B1/04
CPC分类号： C01B33/021
摘要： A Si nanoparticle precursor, precursor fabrication process, and precursor deposition process are presented. The method for forming a silicon (Si) nanoparticle precursor provides a plurality of nanoparticle classes, including at least one Si nanoparticle class. The nanoparticles in each nanoparticle class are defined as having a predetermined diameter. A predetermined amount of each nanoparticle class is measured and combined. For example, a first Si nanoparticle class may be provided having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). As another example, Si nanoparticle classes may foe provided having a diameter ratio of about 77:32:17.
摘要翻译：提出了Si纳米颗粒前体，前体制备工艺和前体沉积工艺。形成硅（Si）纳米颗粒前体的方法提供多个纳米颗粒类别，包括至少一种Si纳米颗粒类。每个纳米颗粒级中的纳米颗粒被定义为具有预定直径。测量并组合每个纳米粒子类的预定量。例如，可以提供具有最大直径的第一Si纳米颗粒类别和具有等于约（0.43）×（最大直径）的第二大直径的第二Si纳米颗粒类。作为另一个实例，可以提供具有约77:32:17的直径比的Si纳米颗粒类。

89. 发明申请

US20090250791A1 Crystalline Semiconductor Stripes 审中-公开
标题翻译：晶体半导体条纹
公开(公告)号：US20090250791A1
公开(公告)日：2009-10-08
申请号：US12099744
申请日：2008-04-08
申请人： Themistokles Afentakis , Robert S. Sposili , Apostolos T. Voutsas
发明人： Themistokles Afentakis , Robert S. Sposili , Apostolos T. Voutsas
IPC分类号： H01L21/20 , H01L27/12
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02609 , H01L21/02686 , H01L29/78696
摘要： Crystalline semiconductor stripes and an associated fabrication process are provided. The method provides an insulator substrate, and deposits a semiconductor layer overlying the insulator substrate. The semiconductor layer is irradiated using a scanning step-and-repeat laser annealing process, which agglomerates portions of the semiconductor layer. In response to cooling agglomerated semiconductor material, oriented crystalline semiconductor stripes are formed on the insulator substrate. The crystalline semiconductor stripes are aligned approximately with a straight line stripe axis overlying a top surface of the insulating substrate. Each crystalline semiconductor stripe includes a plurality of consecutive ring segments aligned with the stripe axis. The rings segments have a width about equal to the laser annealing process step distance. The crystalline semiconductor stripes typically have a top surface shape of a truncated cylinder or a parabolic cross section.
摘要翻译：提供了晶体半导体条纹和相关联的制造工艺。该方法提供绝缘体衬底，并且沉积覆盖绝缘体衬底的半导体层。使用扫描分步重复激光退火工艺照射半导体层，其使半导体层的部分凝聚。响应于冷却聚集的半导体材料，在绝缘体基板上形成取向的结晶半导体条纹。晶体半导体条纹大约与覆盖在绝缘基板的顶表面上的直线条纹轴对准。每个晶体半导体条纹包括与条纹轴对准的多个连续的环段。环段具有大约等于激光退火工艺步距的宽度。晶体半导体条纹通常具有截顶圆柱体的顶表面形状或抛物线截面。

90. 发明申请

US20090232449A1 Erbium-Doped Silicon Nanocrystalline Embedded Silicon Oxide Waveguide 失效
标题翻译：铒掺杂硅纳米晶体嵌入式氧化硅波导
公开(公告)号：US20090232449A1
公开(公告)日：2009-09-17
申请号：US12112767
申请日：2008-04-30
申请人： Hao Zhang , Pooran Chandra Joshi , Apostolos T. Voutsas
发明人： Hao Zhang , Pooran Chandra Joshi , Apostolos T. Voutsas
IPC分类号： G02B6/26 , B05D5/06 , C23C14/48 , C23C14/16 , C23F1/00
CPC分类号： C23C16/30 , C23C16/56 , H01L21/02156 , H01L21/02164 , H01L21/02274 , H01L21/02321 , H01L21/02362 , H01L21/31608
摘要： An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.
摘要翻译：提出了一种铒（Er）掺杂的硅（Si）纳米晶体嵌入式氧化硅（SiOx）波导及其制造方法。该方法提供底层，并且形成覆盖底层的掺铒Si纳米晶体的包含SiOx的薄膜波导，在约1540纳米（nm）处具有最小的光衰减。然后，形成覆盖Er掺杂的SiOx膜的顶层。通过使用高密度等离子体化学气相沉积（HDPCVD）方法沉积富硅氧化物（SRSO）膜并退火SRSO膜来形成Er掺杂的SiOx膜。在注入Er +离子后，再次对Er掺杂的SiOx膜进行退火。掺铒Si纳米晶SiOx膜的第一折射率（n）在1.46〜2.30的范围内。顶层和底层具有小于第一折射率的第二折射率。

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