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    • 83. 发明申请
    • VEHICLE DETECTION APPARATUS AND METHOD USING MAGNETIC SENSOR
    • 车辆检测装置和使用磁传感器的方法
    • US20130154855A1
    • 2013-06-20
    • US13601370
    • 2012-08-31
    • Jae-Jun YOODo-Hyun KimJong-Hyun ParkKyong-Ho KimJong-Woo Choi
    • Jae-Jun YOODo-Hyun KimJong-Hyun ParkKyong-Ho KimJong-Woo Choi
    • G08G1/042G08G1/056
    • G08G1/042
    • The vehicle detection apparatus includes a communication unit, a magnetic sensing unit, a calibration information generation unit, a vehicle detection unit, and a control unit. The communication unit receives information about movement of a reference vehicle from a central management center. The magnetic sensing unit senses the change in a magnetic field attributable to the movement of a vehicle, and generates a magnetic signal. The calibration information generation unit generates calibration information. The vehicle detection unit calibrates the change in the magnetic signal attributable to movement of an actual vehicle based on the calibration information, and detects the movement of the actual vehicle. The control unit controls the above units, and sets the mode to calibration information generation mode in order to generate the calibration information and to vehicle detection mode in order to sense the movement of the actual vehicle.
    • 车辆检测装置包括通信单元,磁感测单元,校准信息生成单元,车辆检测单元和控制单元。 通信单元从中央管理中心接收关于参考车辆的移动的信息。 磁感测单元感测归因于车辆的移动的磁场的变化,并产生磁信号。 校准信息生成单元生成校准信息。 车辆检测单元基于校准信息来校准归因于实际车辆的移动的磁信号的变化,并且检测实际车辆的移动。 控制单元控制上述单元,并且将模式设置为校准信息生成模式,以便产生校准信息和车辆检测模式,以感测实际车辆的移动。
    • 89. 发明授权
    • Thin film transistor and method of fabricating the same
    • 薄膜晶体管及其制造方法
    • US08288216B2
    • 2012-10-16
    • US12753732
    • 2010-04-02
    • Jin-Hee KangChun-Gi YouSun ParkJong-Hyun ParkYul-Kyu Lee
    • Jin-Hee KangChun-Gi YouSun ParkJong-Hyun ParkYul-Kyu Lee
    • H01L21/00
    • H01L29/78609H01L29/78618
    • A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
    • 公开了一种薄膜晶体管(TFT)及其制造方法。 TFT包括衬底,设置在衬底上的栅电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上方并包括多晶硅(poly-Si)层的半导体层,设置的欧姆接触层 超过半导体层的预定区域,设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层,以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此,当控制底栅型TFT的截止电流时,可以通过简单的处理来防止由漏电流引起的特性的劣化。