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81. 发明申请

US20100259611A1 System, method, and device for controlled user tracking 审中-公开
标题翻译：用于受控用户跟踪的系统，方法和设备
公开(公告)号：US20100259611A1
公开(公告)日：2010-10-14
申请号：US11521279
申请日：2006-09-14
申请人： Abtin Keshavarzian , David Krum , Dhananjay Lal , Bhaskar Srinivasan
发明人： Abtin Keshavarzian , David Krum , Dhananjay Lal , Bhaskar Srinivasan
IPC分类号： G08B1/08 , H04N7/18
CPC分类号： G07C9/00111 , G08B13/19697 , G08B13/2462 , G08B21/0476 , G08B21/0492
摘要： In a system and method for controlled user tracking, a mobile device is provided for transmitting an identification signal, and a reader unit, which is statically located at a location, is provided for receiving the identification signal and transmitting to a surveillance control unit, in response to receipt of the identification signal, either the received identification signal or another signal that identifies the mobile device, for logging by the surveillance control unit of a presence of the mobile device at the location, where the mobile device and/or the reader unit is configured to transmit at least one surveillance control message for control of surveillance at the location.
摘要翻译：在用于受控用户跟踪的系统和方法中，提供了用于发送识别信号的移动设备，并且静态地位于一个位置处的读取器单元被提供用于接收识别信号并且传送到监视控制单元响应于接收到识别信号，接收到的标识信号或识别移动设备的另一个信号，用于由监视控制单元记录在该位置处的移动设备的存在，其中移动设备和/或读取器单元被配置为传送至少一个监控控制消息，以控制在该位置的监视。

82. 发明申请

US20100123122A1 SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME 有权
标题翻译：包括打开体积的选择装置，包括其的记忆装置和系统及其形成方法
公开(公告)号：US20100123122A1
公开(公告)日：2010-05-20
申请号：US12274181
申请日：2008-11-19
申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/88 , H01L21/3205 , H01L27/1021 , Y10S438/957
摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal-insulator-insulator-metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
摘要翻译：公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）装置。可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。存储器件和电子系统包括这样的选择器件。

83. 发明授权

US07328259B2 Systems and methods for policy-based application management 有权
标题翻译：用于基于策略的应用程序管理的系统和方法
公开(公告)号：US07328259B2
公开(公告)日：2008-02-05
申请号：US10703683
申请日：2003-11-07
申请人： Bhaskar Srinivasan , Matthias Eichstaedt , Swami Nathan
发明人： Bhaskar Srinivasan , Matthias Eichstaedt , Swami Nathan
IPC分类号： G06F15/173 , G06F15/16
CPC分类号： G06F9/4856
摘要： Systems and methods are provided for managing a plurality of applications comprising application instances running on a plurality of computer servers. A system for managing application includes an application scheduler. The application scheduler receives at least one policy for managing the applications over the computer servers. The application scheduler also receives usage information indicating performance of the applications and the computer servers. The application scheduler then applies the at least one policy to the usage information to determine whether policy violations exist. The application scheduler then determines and executes a modification action of the applications in response to the policy violation.
摘要翻译：提供了用于管理多个应用的系统和方法，所述应用包括在多个计算机服务器上运行的应用程序实例。用于管理应用的系统包括应用调度器。应用程序调度器通过计算机服务器接收至少一个用于管理应用程序的策略。应用调度器还接收指示应用和计算机服务器的性能的使用信息。应用调度器然后将至少一个策略应用于使用信息以确定是否存在策略违规。然后，应用程序调度器响应于策略违例来确定并执行应用的修改动作。

84. 发明授权

US07307521B2 Secure method and apparatus for retrieving network node identifier in wireless networks 有权
标题翻译：用于在无线网络中检索网络节点标识符的安全方法和装置
公开(公告)号：US07307521B2
公开(公告)日：2007-12-11
申请号：US11077631
申请日：2005-03-10
申请人： Karsten Funk , Bhaskar Srinivasan
发明人： Karsten Funk , Bhaskar Srinivasan
IPC分类号： G08B1/08 , H04Q7/00
CPC分类号： H04L29/12254 , G01N33/0073 , H04B5/0043 , H04B5/02 , H04L29/12783 , H04L61/2038 , H04L61/35 , H04L67/02 , H04L67/04 , H04L69/329
摘要： A sensor node arrangement in a wireless network, includes a sensor to sense information, an RF transceiver to communicate the information to at least one element of the wireless network, and a coil to establish a secondary communications channel with a handheld device via inductive coupling, the secondary communications channel used, for example, to receive, during installation of the sensor node arrangement, a node identifier of the sensor node arrangement.
摘要翻译：无线网络中的传感器节点布置包括感测信息的传感器，将RF信息传送到无线网络的至少一个元件的RF收发器以及通过电感耦合与手持设备建立辅助通信信道的线圈，例如，在安装传感器节点装置期间使用的辅助通信信道是传感器节点装置的节点标识符。

85. 发明申请

US20070111735A1 Hybrid localization in wireless networks 有权
标题翻译：无线网络中的混合本地化
公开(公告)号：US20070111735A1
公开(公告)日：2007-05-17
申请号：US11274584
申请日：2005-11-15
申请人： Bhaskar Srinivasan , Sharmila Ravula
发明人： Bhaskar Srinivasan , Sharmila Ravula
IPC分类号： H04Q7/20
CPC分类号： H04L41/12 , G01S5/0263 , G01S5/0289 , H04W64/00 , H04W84/18
摘要： A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.
摘要翻译：本文公开了执行该方法的混合定位方法和无线网络。在混合定位技术的实施例中，网络中的一个或多个传感器节点根据位置区域条件在不同的定位技术之间切换。该技术为给定的位置区域条件选择最精确的定位技术，因此潜在地为这些条件提供最佳位置精度。一组代表性的模拟和实验验证了利用混合定位技术的实施方案实现的潜在性能改进。

86. 发明申请

US20070076739A1 Method and system for providing acknowledged broadcast and multicast communication 有权
标题翻译：提供确认的广播和组播通信的方法和系统
公开(公告)号：US20070076739A1
公开(公告)日：2007-04-05
申请号：US11240401
申请日：2005-09-30
申请人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan
发明人： Arati Manjeshwar , Lakshmi Venkatraman , Bhaskar Srinivasan
IPC分类号： H04J3/26
CPC分类号： H04L12/1868 , H04L12/1881
摘要： A method and system to acknowledge a multicast message includes informing each node in a network about each multicast group to which it belongs, a relative position in each multicast group to which it belongs, and a group size of each multicast group to which it belongs, transmitting the multicast message, and transmitting, by each node in the multicast group, an acknowledgment in an assigned slot, which is determined by the relative position.
摘要翻译：确认组播消息的方法和系统包括：通知网络中每个组播组所属的每个组播组的每个节点，所属节点的每个组播组中的相对位置以及它所属的每个组播组的组大小，发送多播消息，并且由多播组中的每个节点发送由相对位置确定的分配时隙中的确认。

87. 发明授权

US09349445B2 Select devices for memory cell applications 有权
标题翻译：选择存储器单元应用的器件
公开(公告)号：US09349445B2
公开(公告)日：2016-05-24
申请号：US13234659
申请日：2011-09-16
申请人： David H. Wells , Bhaskar Srinivasan , John K. Zahurak
发明人： David H. Wells , Bhaskar Srinivasan , John K. Zahurak
IPC分类号： G11C13/00 , H01L21/28 , H01L27/102 , H01L29/872 , H01L45/00 , H01L27/24
CPC分类号： G11C13/0007 , G11C13/0004 , G11C13/003 , G11C2213/54 , H01L21/28 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/872 , H01L45/00 , H01L45/04 , H01L45/06 , H01L45/1233
摘要： Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier regions formed between a first metal material and a second metal material, and a third metal material formed between each of the respective at least two tunnel barrier regions. The non-ohmic select device is a two terminal select device that supports bi-directional current flow therethrough.
摘要翻译：本文描述了用于存储器单元应用的选择器件及其形成方法。作为示例，一个或多个非欧姆选择器件可以包括形成在第一金属材料和第二金属材料之间的至少两个隧道势垒区域，以及在相应的至少两个隧道势垒区域中的每一个之间形成的第三金属材料。非欧姆选择器件是支持双向电流流过的两端选择器件。

88. 发明授权

US08993044B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials 有权
标题翻译：形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
公开(公告)号：US08993044B2
公开(公告)日：2015-03-31
申请号：US13550340
申请日：2012-07-16
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
IPC分类号： H01G4/06 , H01G4/12 , H01G4/33 , H01L49/02
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

89. 发明授权

US08581224B2 Memory cells 有权
标题翻译：记忆单元
公开(公告)号：US08581224B2
公开(公告)日：2013-11-12
申请号：US13355382
申请日：2012-01-20
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608
摘要： Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.
摘要翻译：一些实施例包括按顺序包含的存储器单元; 第一电极材料，第一金属氧化物材料，第二金属氧化物材料和第二电极材料。第一金属氧化物材料具有至少两个相对于彼此的氧浓度不同的区域。其中一个地区是第一个地区，另一个是第二个地区。第一区域比第二区域更靠近第一电极材料，并且具有比第二区域更大的氧浓度。第二金属氧化物材料包括与第一金属氧化物材料不同的金属。一些实施例包括形成其中氧基本上不可逆地从金属氧化物材料的区域转移到氧沉降材料的存储单元的方法。氧传递在金属氧化物材料的一个区域内的氧浓度相对于另一个产生差异。

90. 发明授权

US08537599B2 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell 有权
标题翻译：存储器单元，非易失性存储器阵列，操作存储器单元的方法，从存储器单元读取和写入的方法，以及编程存储器单元的方法
公开(公告)号：US08537599B2
公开(公告)日：2013-09-17
申请号：US13612513
申请日：2012-09-12
申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/085 , H01L45/1206
摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
摘要翻译：一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储器单元的编程状态。在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。该材料具有彼此不同组成的第一和第二横向区域。第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。公开了其他方面和实现。

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