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81. 发明授权

US08704277B2 Spectrally efficient photodiode for backside illuminated sensor 有权
标题翻译：背光照明传感器的光谱高效光电二极管
公开(公告)号：US08704277B2
公开(公告)日：2014-04-22
申请号：US11624568
申请日：2007-01-18
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L27/14
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14621 , H01L27/1464
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底以及形成在半导体衬底的前表面上的多个像素。电介质层设置在半导体衬底的前表面之上。传感器还包括根据多个像素布置的多个阵列区域。阵列区域中的至少两个具有彼此不同的辐射响应特性，例如具有比第二阵列区域更大的结深度的第一阵列区域，或者具有比第二阵列区域更大的掺杂剂浓度的第一阵列区域。

82. 发明申请

US20120038017A1 Method for Making Multi-Step Photodiode Junction Structure for Backside Illuminated Sensor 有权
标题翻译：制造背光照明传感器多步光电二极管结结构的方法
公开(公告)号：US20120038017A1
公开(公告)日：2012-02-16
申请号：US13271780
申请日：2011-10-12
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L31/02
CPC分类号： H01L27/14645 , H01L27/1464
摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.
摘要翻译：提供制造背面照明传感器的方法。提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。

83. 发明授权

US07999342B2 Image sensor element for backside-illuminated sensor 有权
标题翻译：用于背面照明传感器的图像传感器元件
公开(公告)号：US07999342B2
公开(公告)日：2011-08-16
申请号：US11859848
申请日：2007-09-24
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
IPC分类号： H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14603 , H01L27/1464
摘要： Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.
摘要翻译：提供了一种背面照明传感器，其包括具有前表面和后表面的半导体基板。多个图像传感器元件形成在半导体衬底的前表面上。图像传感器元件中的至少一个包括传输晶体管和光电检测器。转移晶体管的栅极包括光反射层。包括光反射层的传输晶体管的栅极覆盖在光电检测器上。在一个实施例中，栅极覆盖光电探测器至少5％。

84. 发明授权

US07656000B2 Photodetector for backside-illuminated sensor 有权
标题翻译：背面照明传感器的光电探测器
公开(公告)号：US07656000B2
公开(公告)日：2010-02-02
申请号：US11753480
申请日：2007-05-24
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
IPC分类号： H01L31/00 , H01L31/062
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/1464
摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.
摘要翻译：背面照明传感器，包括半导体衬底。半导体衬底具有前表面和后表面。在半导体衬底的前表面上形成多个像素。至少一个像素包括光栅结构。光门结构具有包括反射层的栅极。

85. 发明申请

US20070262364A1 METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR 失效
标题翻译：制造背面照明彩色图像传感器的波形结构的方法
公开(公告)号：US20070262364A1
公开(公告)日：2007-11-15
申请号：US11626664
申请日：2007-01-24
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。传感器还包括形成在半导体衬底的后表面内的多个吸收深度。多个吸收深度中的每一个根据多个像素中的每一个排列。用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素之下。

86. 发明申请

US20070117253A1 METHOD FOR PROVIDING METAL EXTENSION IN BACKSIDE ILLUMINATED SENSOR FOR WAFER LEVEL TESTING 有权
标题翻译：在背光照明传感器中提供金属扩展用于水平测量的方法
公开(公告)号：US20070117253A1
公开(公告)日：2007-05-24
申请号：US11532674
申请日：2006-09-18
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L21/00 , H01L31/112
CPC分类号： H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L31/0203 , H01L2224/48463 , H01L2924/0002 , H01L2924/00
摘要： A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.
摘要翻译：在本公开中提供了在背面照明图像传感器中提供金属延伸的方法。在一个实施例中，第一组焊盘和第二组焊盘以及金属层设置在背面照明的图像传感器中。第一组焊盘通过金属层电耦合到第二组焊盘，并且第二组焊盘中的焊盘暴露于背面照射的图像传感器的表面用于测试。在替代实施例中，第一组焊盘，至少一个第二焊盘，直接位于第一组焊盘上方，设置在背面照明的图像传感器中。第一组焊盘电耦合到至少一个第二焊盘，并且至少一个第二焊盘暴露于背面照射的图像传感器的表面用于测试。

87. 发明申请

US20130320420A1 CMOS Image Sensors and Methods for Forming the Same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US20130320420A1
公开(公告)日：2013-12-05
申请号：US13615071
申请日：2012-09-13
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
摘要翻译：一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。第一掺杂区域是第一导电类型，并具有第一杂质浓度。第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。第二掺杂区域包围第一掺杂区域。第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

88. 发明申请

US20110294250A1 IMAGE SENSOR ELEMENT FOR BACKSIDE-ILLUMINATED SENSOR 有权
标题翻译：背面照明传感器的图像传感器元件
公开(公告)号：US20110294250A1
公开(公告)日：2011-12-01
申请号：US13206228
申请日：2011-08-09
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
IPC分类号： H01L31/18
CPC分类号： H01L27/14625 , H01L27/14603 , H01L27/1464
摘要： Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.
摘要翻译：提供一种形成和/或使用背面照明传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。传输晶体管和光电检测器形成在前表面上。转移晶体管的栅极包括光反射层。包括光反射层的传输晶体管的栅极覆盖在光电检测器上。入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。可以由光电检测器感测反射的辐射。

89. 发明授权

US07387907B2 Image sensor with optical guard ring and fabrication method thereof 有权
标题翻译：具有光学保护环的图像传感器及其制造方法
公开(公告)号：US07387907B2
公开(公告)日：2008-06-17
申请号：US11517296
申请日：2006-09-08
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Yean-Kuen Fang
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Yean-Kuen Fang
IPC分类号： H01L21/00
CPC分类号： H01L27/1462 , H01L25/167 , H01L27/14625 , H01L27/1463 , H01L27/14687 , H01L27/14689 , H01L27/15 , H01L2924/0002 , H01L2924/00
摘要： An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor.
摘要翻译：一种图像传感器装置及其制造方法，其中提供其中具有至少一个浅沟槽隔离结构的基板。在衬底中形成至少一个光电传感器和至少一个发光元件，例如MOS或LED。光传感器和发光元件通过浅沟槽隔离结构隔离。在浅沟槽隔离结构中形成开口以暴露部分衬底。在开口中形成不透明屏蔽物，以防止来自发光元件的光子撞击光传感器。

90. 发明申请

US20070262354A1 Spectrally Efficient Photodiode For Backside Illuminated Sensor 有权
标题翻译：背光照明传感器的光谱高效光电二极管
公开(公告)号：US20070262354A1
公开(公告)日：2007-11-15
申请号：US11624568
申请日：2007-01-18
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14621 , H01L27/1464
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底以及形成在半导体衬底的前表面上的多个像素。电介质层设置在半导体衬底的前表面之上。传感器还包括根据多个像素布置的多个阵列区域。阵列区域中的至少两个具有彼此不同的辐射响应特性，例如具有比第二阵列区域更大的结深度的第一阵列区域，或者具有比第二阵列区域更大的掺杂剂浓度的第一阵列区域。

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