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1. 发明申请

US20070262364A1 METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR 失效
标题翻译：制造背面照明彩色图像传感器的波形结构的方法
公开(公告)号：US20070262364A1
公开(公告)日：2007-11-15
申请号：US11626664
申请日：2007-01-24
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。传感器还包括形成在半导体衬底的后表面内的多个吸收深度。多个吸收深度中的每一个根据多个像素中的每一个排列。用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素之下。

2. 发明授权

US08525286B2 Method of making wafer structure for backside illuminated color image sensor 有权
标题翻译：制造背面照明彩色图像传感器的晶圆结构的方法
公开(公告)号：US08525286B2
公开(公告)日：2013-09-03
申请号：US12537167
申请日：2009-08-06
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.
摘要翻译：提供集成电路装置。集成电路器件可以包括衬底; 设置在所述基板的第一部分上的第一辐射感测元件; 以及设置在所述基板的第二部分上的第二辐射感测元件。第一部分包括第一辐射吸收特性，第二部分包括与第一辐射吸收特性不同的第二辐射吸收特性。

3. 发明授权

US07638852B2 Method of making wafer structure for backside illuminated color image sensor 失效
标题翻译：制造背面照明彩色图像传感器的晶圆结构的方法
公开(公告)号：US07638852B2
公开(公告)日：2009-12-29
申请号：US11626664
申请日：2007-01-24
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.
摘要翻译：背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。传感器还包括形成在半导体衬底的后表面内的多个吸收深度。多个吸收深度中的每一个根据多个像素中的每一个排列。用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素的下方。

4. 发明申请

US20090294886A1 METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR 有权
标题翻译：制造背面照明彩色图像传感器的波形结构的方法
公开(公告)号：US20090294886A1
公开(公告)日：2009-12-03
申请号：US12537167
申请日：2009-08-06
申请人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
发明人： Tzu-Hsuan Hsu , Chris Hsieh , Dun-Nian Yaung , Chung-Yi Yu
IPC分类号： H01L31/0216
CPC分类号： H01L31/18 , H01L27/1203 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.
摘要翻译：提供集成电路装置。集成电路器件可以包括衬底; 设置在所述基板的第一部分上的第一辐射感测元件; 以及设置在所述基板的第二部分上的第二辐射感测元件。第一部分包括第一辐射吸收特性，第二部分包括与第一辐射吸收特性不同的第二辐射吸收特性。

5. 发明授权

US06531413B2 Method for depositing an undoped silicate glass layer 有权
标题翻译：沉积未掺杂硅酸盐玻璃层的方法
公开(公告)号：US06531413B2
公开(公告)日：2003-03-11
申请号：US09730127
申请日：2000-12-05
申请人： Chris Hsieh , Kevin Luo
发明人： Chris Hsieh , Kevin Luo
IPC分类号： H01L2131
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/31612 , H01L21/76224
摘要： A method for depositing an undoped silicate glass layer. An undoped silicon glass layer is formed to fill a recessed region in a semiconductor substrate by performing at least three chemical vapor depositions. The recessed region is a trench of a shallow trench isolation, or a gap between a plurality of polysilicon or conductive layers. At each pass, under deposition conditions that are as conventionally defined, this method comprises increasing the number of times of deposition performed on the substrate and decreasing the time of each deposition inside a reaction chamber in order to have the thickness of the undoped silicate glass thinner. In this manner, the gap filling ability is enhanced and void formation is prevented. This method also includes, before each deposition is performed, rotating the semiconductor substrate a given angle in a clockwise or counter-clockwise direction so that by the last deposition, the semiconductor substrate has rotated a total of 360° or a multiple of 360°. This method allows having the undoped silicate glass deposit uniformly upon the substrate.
摘要翻译：一种沉积未掺杂的硅酸盐玻璃层的方法。形成未掺杂的硅玻璃层，以通过进行至少三个化学气相沉积来填充半导体衬底中的凹陷区域。凹陷区域是浅沟槽隔离的沟槽，或多个多晶硅或导电层之间的间隙。在每次通过时，在常规定义的沉积条件下，该方法包括增加在衬底上进行的沉积次数，并减少反应室内每次沉积的时间，以使未掺杂的硅酸盐玻璃的厚度变薄。以这种方式，间隙填充能力得到提高，防止形成空隙。该方法还包括在执行每次沉积之前，以顺时针或逆时针方向旋转半导体衬底给定的角度，使得通过最后的沉积，半导体衬底已经旋转了360度或360度的倍数。该方法允许将未掺杂的硅酸盐玻璃均匀地沉积在基底上。

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