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    • 82. 发明授权
    • Micro movable device and interferometer
    • 微动移动装置和干涉仪
    • US08520279B2
    • 2013-08-27
    • US12614903
    • 2009-11-09
    • Norinao KoumaOsamu TsuboiTsuyoshi Matsumoto
    • Norinao KoumaOsamu TsuboiTsuyoshi Matsumoto
    • G02B26/08
    • G02B26/0841G01J3/4535H02N1/006
    • A micro movable device includes a movable member, a stationary portion, and connecting portions each connected to the movable member and the stationary portion. The movable member includes a pair of electrodes. The stationary portion includes a pair of electrodes cooperating with the electrodes of the movable member to generate a driving force for translating the movable member in its thickness direction. The connection points at which the respective connecting portions are connected to the movable member are spaced from each other. The electrodes of the movable member are positioned between two mutually spaced connection points, as viewed along the spacing direction of the two connection points.
    • 微型可移动装置包括可移动部件,固定部分和连接到可移动部件和固定部分的连接部分。 可动构件包括一对电极。 固定部分包括与可动构件的电极配合的一对电极,以产生用于在可移动构件的厚度方向上平移的驱动力。 各连接部分连接到可移动部件的连接点彼此间隔开。 当沿着两个连接点的间隔方向观察时,可动构件的电极位于两个相互间隔的连接点之间。
    • 89. 发明授权
    • Method and apparatus for plasma processing
    • 等离子体处理方法和装置
    • US08057634B2
    • 2011-11-15
    • US10902032
    • 2004-07-30
    • Ryoji NishioTadamitsu KanekiyoYoshiyuki OotaTsuyoshi Matsumoto
    • Ryoji NishioTadamitsu KanekiyoYoshiyuki OotaTsuyoshi Matsumoto
    • H01L21/205H01L21/302
    • G06F17/5081G06F17/5086H01J37/32082H01J37/32642H01J37/32935H01L21/67069H01L21/6875
    • The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
    • 本发明提供一种等离子体处理装置,其能够最小化晶片周边周围的电位分布的不均匀性,并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质,导体或半导体形成的并且施加RF的聚焦环,其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度,表面电压,材料和结构被优化,使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化,建立适当的公差范围来实现结构的优化。
    • 90. 发明授权
    • Plasma processing method and apparatus
    • 等离子体处理方法和装置
    • US08038896B2
    • 2011-10-18
    • US11502416
    • 2006-08-11
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • Eiji IkegamiShoji IkuharaTakeshi ShimadaKenichi KuwabaraTakao AraseTsuyoshi Matsumoto
    • G01L21/30C23F1/00
    • H01J37/32963H01J37/32082H01J37/32091H01J37/321H01J37/3211H01J37/32192H01J37/32917H01J37/32926H01J37/32935H01J37/32981H01J37/3299H01J2237/1825H01J2237/327H01L21/67069H01L21/67242H05H1/46
    • Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
    • 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理,该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极,供给处理用气体供给装置 气体进入处理室,用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上,并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极,以在处理室内产生等离子体,其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料,直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时,确定调味品的结束。