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1. 发明申请

US20070281478A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20070281478A1
公开(公告)日：2007-12-06
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

2. 发明申请

US20100288195A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100288195A1
公开(公告)日：2010-11-18
申请号：US12846403
申请日：2010-07-29
申请人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

3. 发明授权

US08900401B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08900401B2
公开(公告)日：2014-12-02
申请号：US12846403
申请日：2010-07-29
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

4. 发明授权

US08038896B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08038896B2
公开(公告)日：2011-10-18
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

5. 发明授权

US07112805B2 Vacuum processing apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07112805B2
公开(公告)日：2006-09-26
申请号：US10875231
申请日：2004-06-25
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： G01F23/00 , G01K5/08
CPC分类号： H01L21/67207 , H01L21/67167
摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.
摘要翻译：本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。真空处理装置包括用于对样品进行真空处理的多个真空处理室; 用于将样品进入和离开真空处理室的真空托架; 能够在大气和真空之间切换以将样品进出真空处理室的可切换室; 用于支撑多个盒的盒支撑件和控制器，用于控制样品从盒通过可切换室的携带，真空托架装置进入和离开真空处理室。真空处理室配有蚀刻室和临界尺寸测量室，用于对样品进行临界尺寸检验。

6. 发明申请

US20070023683A1 Vacuum processing apparatus and vacuum processing method 审中-公开
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20070023683A1
公开(公告)日：2007-02-01
申请号：US11518894
申请日：2006-09-12
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： G01F23/00
CPC分类号： H01L21/67207 , H01L21/67167
摘要： A vacuum processing apparatus and method includes a sample taken out from a given cassette placed on a cassette support in atmosphere, the sample is carried into a vacuum processing chamber via a chamber enabling switching between atmosphere and vacuum, the sample is subjected to etching processing in the vacuum processing chamber, and at least one inspection process is carried out in the vacuum either before or after etching of the sample in the vacuum processing chamber. The at least one inspection process in the vacuum is a defect inspection.
摘要翻译：真空处理装置和方法包括从大气中放置在盒支架上的给定盒取出的样品，通过能够在大气和真空之间切换的室将样品运送到真空处理室中，对样品进行蚀刻处理在真空处理室中对样品进行蚀刻之前或之后，在真空中进行至少一次检查处理。真空中的至少一个检查过程是缺陷检查。

7. 发明申请

US20050218337A1 Vacuum processing apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20050218337A1
公开(公告)日：2005-10-06
申请号：US10875231
申请日：2004-06-25
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： H01L21/66 , H01J37/20 , H01L21/00 , H01L21/02 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67207 , H01L21/67167
摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers 3, 4 for subjecting a sample 8 to vacuum processing; a vacuum carriage means 2 for carrying the sample into and out of the vacuum processing chamber; a switchable chamber 5 capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette supporting means 9 for supporting a plurality of cassettes 7 capable of housing samples; a carriage means 6 capable of moving vertically for taking out a sample from a given cassette on the cassette supporting means; and a control means performing carriage control for carrying the sample taken out of the given cassette via the carriage means, the switchable chamber and the vacuum carriage means into the vacuum processing chamber, and for carrying the processed sample out of the vacuum processing chamber; wherein the vacuum processing chamber is equipped with an etching chamber 3 and a defect inspection chamber or CD measurement chamber 4 for inspecting the sample for defects.
摘要翻译：本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。真空处理装置包括用于对样品8进行真空处理的多个真空处理室3,4; 用于将样品进出真空处理室的真空托架装置2; 能够在大气和真空之间切换的可切换室5，用于将样品进出真空处理室; 用于支撑能够容纳样品的多个盒带7的盒支撑装置9; 能够垂直移动以从盒支撑装置上的给定盒带取出样品的托架装置6; 以及控制装置，执行托架控制，用于将从所述给定盒中取出的样品经由所述滑架装置，所述可切换室和所述真空托架装置运送到所述真空处理室中，并将所述经处理的样品运送出所述真空处理室; 其中真空处理室配备有用于检查样品缺陷的蚀刻室3和缺陷检查室或CD测量室4。

8. 发明授权

US08766145B2 Process for producing semiconductive porcelain composition and heater employing semiconductive porcelain composition 失效
标题翻译：采用半导体瓷器组成的半导体陶瓷组合物和加热器的生产方法
公开(公告)号：US08766145B2
公开(公告)日：2014-07-01
申请号：US12920366
申请日：2009-03-12
申请人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
发明人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
IPC分类号： H05B3/10 , H05B3/14 , C04B35/468 , C04B35/64
CPC分类号： H01C7/025 , C04B35/46 , C04B35/4682 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/6583 , C04B2235/663 , H01C17/06533
摘要： To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material.There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.
摘要翻译：改善BaTiO3-（Bi1 / 2Na1 / 2）TiO3材料的跳跃特性。提供一种制备其中一部分Ba被Bi-Na取代的半导体陶瓷组合物的方法，该方法包括制备（BaQ）TiO 3煅烧粉末（其中Q是半导体掺杂剂）的步骤，步骤制备（BiNa）TiO 3煅烧粉末的步骤，将（BaQ）TiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末混合的步骤，对混合的煅烧粉末进行成型和烧结的步骤，以及对获得的烧结体在600℃以下; 以及使用通过上述步骤制备的元件的PCT加热器。

9. 发明授权

US08557724B2 Semiconductor porcelain composition and method of producing the same 失效
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US08557724B2
公开(公告)日：2013-10-15
申请号：US12626700
申请日：2009-11-27
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C04B35/468 , C04B35/46 , H01B1/08 , H01C7/02
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
摘要翻译：通过分别制备（BaR）TiO 3（R为La，Dy，Eu，Gd或Y）的组合物和（BiNa）TiO 3的组合物并在（a）的温度下煅烧（BaR）TiO 3的组成）来制备半导体陶瓷组合物的温度为900℃至1300℃，并在700℃至950℃下煅烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。类似地，通过分别制备（BaM）TiO 3（M为Nb，Ta或Sb）和（BiNa）TiO 3组成的组合物，并在900℃的温度下煅烧（BaM）TiO 3的组成，制备半导体瓷组合物 ℃至1300℃，并在700℃至950℃的温度下焙烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。

10. 发明申请

US20120175361A1 SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, PTC ELEMENT AND HEAT GENERATING MODULE 审中-公开
标题翻译：半导体陶瓷组合物，其制造方法，PTC元件和发热模块
公开(公告)号：US20120175361A1
公开(公告)日：2012-07-12
申请号：US13391949
申请日：2010-10-05
申请人： Kentaro Ino , Takeshi Shimada , Toshiki Kida
发明人： Kentaro Ino , Takeshi Shimada , Toshiki Kida
IPC分类号： B23K13/08 , H01C7/02 , H01B1/08
CPC分类号： C04B35/4682 , C01G29/006 , C01P2002/50 , C01P2006/40 , C04B35/62685 , C04B35/64 , C04B2235/3201 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/5436 , C04B2235/6584 , C04B2235/95 , H01B1/08 , H01C7/025 , H05B3/141 , H05B2203/02
摘要： There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, which exhibits an excellent jump characteristic while reducing room temperature resistivity and which also reduces room temperature resistivity and exhibits small change with time.A semiconductor ceramic composition which is represented by a composition formula of [(Biθ—Naδ)x(Ba1-yRy)1-x]TiO3 (where R is at least one kind of rare earth elements), in which x, y, θ and δ satisfy 0
摘要翻译：提供了一种半导体陶瓷组合物，其中一部分BaTiO 3的Ba被Bi-Na取代，其具有优异的跳跃特性，同时降低室温电阻率，并且还降低室温电阻率并且随时间变化呈现小的变化。由[（Bi＆amp; Naa）x（Ba1-yRy）1-x] TiO3（其中R是至少一种稀土元素）的组成式表示的半导体陶瓷组合物，其中x，y，＆thetas; 并且δ满足0

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