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81. 发明授权

US4551742A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4551742A
公开(公告)日：1985-11-05
申请号：US640570
申请日：1984-08-14
申请人： Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
发明人： Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
IPC分类号： H01L27/14 , H01L27/146 , H01L31/14 , H04N5/335 , H04N5/359 , H04N5/374 , H04N9/07
CPC分类号： H01L27/14654
摘要： A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.
摘要翻译：固态成像装置具有由光电转换元件和MOS晶体管作为开关元件构成并以矩阵形式配置的像素。扫描机构顺序地扫描像素以顺序地读出光电转换信号。为了消除污迹并降低寄生电容，在用于隔离元件的绝缘体层上形成用作构成像素的MOS晶体管的输出端的高杂质浓度扩散层。

82. 发明授权

US4456929A Solid state image pick-up apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US4456929A
公开(公告)日：1984-06-26
申请号：US385005
申请日：1982-06-04
申请人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Iwao Takemoto
发明人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Iwao Takemoto
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/365 , H04N5/374 , H04N3/15
CPC分类号： H04N3/1568
摘要： In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second semiconductor layer including a horizontal shift register for selecting the horizontal switching elements, a third semiconductor layer including a vertical shift register for selecting the vertical switching elements, the first, second and third semiconductor layers are insulated from each other, and gate voltage V.sub.SMOS.L impressed upon a gate electrode of a not selected horizontal switching element is made to satisfy a relation V.sub.SMOS.L .gtoreq.V.sub.WPD +F.sub.FB where V.sub.WPD represents a potential of the first semiconductor layer, and V.sub.FB a flat band voltage beneath gate electrodes of the horizontal switching elements.
摘要翻译：在包括包括光电转换元件阵列的第一半导体层和适于选择光电转换元件的垂直和水平开关元件的类型的固态图像拾取装置中，包括水平移位寄存器的第二半导体层，水平开关元件，包括用于选择垂直开关元件的垂直移位寄存器的第三半导体层，第一，第二和第三半导体层彼此绝缘，并且栅极电压VSMOS.L施加在未选择的水平的栅电极使开关元件满足VSMOS.L> / = VWPD + FFB的关系，其中VWPD表示第一半导体层的电位，VFB是水平开关元件的栅电极下方的平带电压。

83. 发明授权

US4349743A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4349743A
公开(公告)日：1982-09-14
申请号：US206865
申请日：1980-11-14
申请人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
发明人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
IPC分类号： H01L27/14 , H01L27/146 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14643 , H04N3/1512 , H04N3/1568
摘要： A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.
摘要翻译：一种固态成像装置，其中MOS传感器用于光电传感器部分，CTD移位寄存器用于读出电路，第一和第二传输门连接在垂直信号输出线和CTD之间，复位门连接在第一和第二传输门的接合点与复位电压线之间。采用在水平消隐期间将多行的信号输出传送到CTD的方法，并且在水平扫描期间同时读出多行的信号。在信号传输中，偏置电荷从CTD倾倒到垂直信号输出线路中，由偏置电荷和信号电荷组成的混合电荷转移到CTD。此后，读出信号。

84. 发明授权

US4295055A Circuit for generating scanning pulses 失效
标题翻译：用于产生扫描脉冲的电路
公开(公告)号：US4295055A
公开(公告)日：1981-10-13
申请号：US46028
申请日：1979-06-06
申请人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
IPC分类号： G11C19/00 , G11C19/18 , G11C19/28 , H01L27/146 , H01L31/10 , H03K5/15 , H04N3/14
CPC分类号： H03K5/15093 , G11C19/184 , G11C19/28
摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译：一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

85. 发明授权

US4267469A Solid-state imaging device having a clamping circuit for drawing out excess charge 失效
标题翻译：具有用于抽出多余电荷的钳位电路的固态成像装置
公开(公告)号：US4267469A
公开(公告)日：1981-05-12
申请号：US066880
申请日：1979-08-16
申请人： Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Masaharu Kubo
发明人： Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Masaharu Kubo
IPC分类号： H01L27/146 , H03K3/42 , H01L27/14 , H01L29/78 , H01L31/00
CPC分类号： H04N5/335 , H01L27/14654 , H04N5/3591
摘要： In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizontal scanning circuits which provide scanning pulses for controlling the operations of the vertical and horizontal switching MOSFETs; the improvement therein comprising a clamping circuit which is made up of a diode, a MOSFET or the like and which is disposed between the photodiode and a vertical scanning line of the succeeding stage, so that excess charges overflowing the photodiode are drawn out from the vertical scanning line through the clamping circuit, whereby the blooming can be prevented.
摘要翻译：在具有相同半导体衬底的固态成像器件中，排列有二维排列的多个光电二极管，选择光电二极管的位置的垂直和水平开关MOSFET以及提供扫描脉冲的垂直和水平扫描电路，用于控制垂直和水平开关MOSFET的工作; 其改进在于包括由二极管，MOSFET等组成并且设置在光电二极管和后级的垂直扫描线之间的钳位电路，使得溢出光电二极管的过量电荷从垂直线扫描线通过钳位电路，从而可以防止起霜。

86. 发明授权

US4223330A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4223330A
公开(公告)日：1980-09-16
申请号：US5567
申请日：1979-01-22
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/374 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14654
摘要： In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.
摘要翻译：在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中，垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路，其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管未选择的位置被置于更深的截止状态，即，对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

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