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81. 发明授权

US5917225A Insulated gate field effect transistor having specific dielectric structures 失效
标题翻译：具有特定电介质结构的绝缘栅场效应晶体管
公开(公告)号：US5917225A
公开(公告)日：1999-06-29
申请号：US721052
申请日：1996-09-26
申请人： Shunpei Yamazaki , Hongyong Zhang , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Yasuhiko Takemura
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786 , H01L31/0392
CPC分类号： H01L29/78636 , H01L27/1218 , H01L29/4908 , H01L29/78603 , H01L29/04
摘要： In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".
摘要翻译：在具有金属栅极的薄膜绝缘栅型场效应晶体管中，栅电极的表面进行阳极氧化，设置氮化硅膜以便插入在栅电极和栅绝缘膜之间，防止可移动离子侵入通道，并且还防止由于栅极电极和沟道区域之间的电位差导致的栅极绝缘膜的击穿。通过用阳极氧化等金属材料如铬等涂覆栅电极的特定部分，然后仅将金属材料如铬等与金属材料的阳极氧化物如铬或形成金属栅极（例如铝）的暴露部分，并且上部布线连接到暴露部分。此外，在栅电极和栅极绝缘膜之间或衬底和衬底上的层之间形成氧化铝或氮化硅作为蚀刻阻挡层，从而可以防止过蚀刻，并且元件的平坦度可以要改进另外，不考虑概念“接触孔”形成接触。

82. 发明授权

US5650636A Active matrix display and electrooptical device 失效
标题翻译：主动矩阵显示和电光装置
公开(公告)号：US5650636A
公开(公告)日：1997-07-22
申请号：US456404
申请日：1995-06-01
申请人： Yasuhiko Takemura , Toshiji Hamatani , Toshimitsu Konuma , Jun Koyama , Yuji Kawasaki , Hongyong Zhang , Shunpei Yamazaki
发明人： Yasuhiko Takemura , Toshiji Hamatani , Toshimitsu Konuma , Jun Koyama , Yuji Kawasaki , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： G02F1/1362 , G09G3/36 , H01L29/786 , H01L29/04
CPC分类号： H01L27/12 , G02F1/13624 , G09G3/3648 , H01L29/78645 , H01L29/78696 , G02F2001/13685 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2320/0214 , H01L27/124 , H01L29/78621
摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.
摘要翻译：一种用于降低有源矩阵显示器的截止电流的结构。在有源矩阵显示器中，多个TFT与每个像素电极串联连接。在串联连接的这些TFT中，除了位于相对端的TFT之外的至少一个TFT保持导通。或者，至少一个电容器连接在串联连接的每个TFT的漏极和源极的接点与AC接地点之间。因此，在TFT的截止期间从辅助电容器释放的电荷量减少。

83. 发明授权

US5485019A Semiconductor device and method for forming the same 失效
标题翻译：半导体装置及其形成方法
公开(公告)号：US5485019A
公开(公告)日：1996-01-16
申请号：US014455
申请日：1993-02-03
申请人： Shunpei Yamazaki , Akira Mase , Masaaki Hiroki , Yasuhiko Takemura , Hongyong Zhang , Hideki Uochi
发明人： Shunpei Yamazaki , Akira Mase , Masaaki Hiroki , Yasuhiko Takemura , Hongyong Zhang , Hideki Uochi
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L33/00 , H01L29/78
CPC分类号： H01L29/66757 , H01L27/1214 , H01L29/4908 , H01L29/78618 , G02F2001/136245 , G09G2300/0823 , Y10S148/161 , Y10S148/163
摘要： A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.
摘要翻译：形成在基板上的布线被氧化，并且氧化物用作用于形成晶体管的源极和漏极杂质区域或用作彼此绝缘布线的材料的掩模，或者用作电容器的电介质。氧化物的厚度根据氧化物的目的而确定。在适于用于有源矩阵液晶显示器的晶体管中，沟道长度或源极区域和漏极区域之间的距离大于沿着栅极电极的纵向取向的栅电极的长度渠道。偏移区域形成在源极和漏极区域的侧面上的沟道区域中。没有或非常弱的电场被施加到来自栅电极的这些偏移区域。

84. 发明授权

US5313076A Thin film transistor and semiconductor device including a laser crystallized semiconductor 失效
标题翻译：薄膜晶体管和包括激光晶体化半导体的半导体器件
公开(公告)号：US5313076A
公开(公告)日：1994-05-17
申请号：US853690
申请日：1992-03-17
申请人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/04 , H01L29/16 , H01L29/78 , H01L29/786 , H01L27/01 , H01L29/12 , H01L31/036
CPC分类号： H01L29/78675 , H01L29/16
摘要： A semiconductor material and a method for forming the same, the semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, the semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译：一种半导体材料及其形成方法，其特征在于，所述半导体材料通过以下步骤制造，所述方法包括：将激光束等效于激光的激光束或高强度光照射到含有碳，氮和氧的非晶硅膜中，浓度为5×1019原子×3或更低，优选为1×1019原子×3或更低，而不熔化非晶硅膜。本发明以优异的再现性提供具有高迁移率的薄膜半导体，该半导体材料可用于制造诸如提高器件特性的薄膜晶体管的薄型薄膜半导体器件。

85. 发明授权

US07622335B2 Method for manufacturing a thin film transistor device 失效
标题翻译：制造薄膜晶体管器件的方法
公开(公告)号：US07622335B2
公开(公告)日：2009-11-24
申请号：US10926059
申请日：2004-08-26
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Takeshi Fukunaga , Yasuhiko Takemura
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , G09G2300/0408 , H01L21/02532 , H01L21/2022 , H01L27/1251 , H01L27/1277 , H01L27/1281 , H01L29/66757
摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
摘要翻译：提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火，。通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得漏电流低的晶体管和迁移率高的晶体管晶体管，然后通过其热结晶。

86. 发明授权

US06875628B1 Semiconductor device and fabrication method of the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06875628B1
公开(公告)日：2005-04-05
申请号：US08811742
申请日：1997-03-06
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L27/1214 , H01L27/1277
摘要： Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
摘要翻译：在非晶硅膜上将镍引入除了像素部分之外的外围电路部分的预定区域以从该区域结晶。在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，照射激光以改善结晶。之后，形成电极/电线。由此，外围电路部的薄膜晶体管（TFT）由结晶硅晶体构成的有源矩阵型液晶显示器，晶体硅膜的晶体沿平行于载流子的方向生长，并且其像素部分中的TFT构成的非晶硅膜。

87. 发明授权

US06756657B1 Method of preparing a semiconductor having controlled crystal orientation 失效
标题翻译：制备具有受控晶体取向的半导体的方法
公开(公告)号：US06756657B1
公开(公告)日：2004-06-29
申请号：US09238579
申请日：1999-01-28
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L31036
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

88. 发明授权

US6037610A Transistor and semiconductor device having columnar crystals 失效
公开(公告)号：US6037610A
公开(公告)日：2000-03-14
申请号：US41516
申请日：1998-03-13
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L29/786 , H01L29/04
CPC分类号： H01L21/2022 , H01L29/78675
摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

89. 发明授权

US5646424A Transistor device employing crystallization catalyst 失效
标题翻译：晶体管器件采用结晶催化剂
公开(公告)号：US5646424A
公开(公告)日：1997-07-08
申请号：US477941
申请日：1995-06-07
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： H01L21/00 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/36 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/786 , H01L29/76 , H01L29/04 , H01L27/01
CPC分类号： H01L21/26506 , H01L21/02532 , H01L21/02672 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78675 , H01L29/78678
摘要： A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduced in the silicon film by adhering a coating containing the catalyst element and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. The catalyst element can also be incorporated into the silicon film by means of ion implantation and the like. Also disclosed is a thin film transistor, which comprises a gate electrode, a gate insulating film, an amorphous silicon film having impurities implanted therein to form source and drain regions as the impurity regions, and a catalyst element introduced into the impurity regions by adhering a coating containing the catalyst element or by means of ion doping and the like, wherein the resulting structure is annealed at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.
摘要翻译：薄膜晶体管包括具有形成在其上的栅绝缘膜和栅电极的结晶非晶硅膜。该装置包括以自对准方式注入的杂质和加速硅膜结晶的催化剂。将催化剂通过粘附含有催化剂元素的涂层并在低于基板的变形温度的温度下退火所得结构而引入到硅膜中，以激活掺杂的杂质。催化剂元件也可以通过离子注入等并入硅膜中。还公开了一种薄膜晶体管，其包括栅极，栅极绝缘膜，注入杂质的非晶硅膜，以形成源极和漏极区域作为杂质区域;以及催化剂元件，通过粘附到杂质区域包含催化剂元素的涂层或通过离子掺杂等方法，其中所得结构在低于衬底的变形温度的温度下退火以活化掺杂的杂质。

90. 发明授权

US5624851A Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized 失效
标题翻译：制造半导体器件的方法，其中非晶硅膜的一部分被热结晶，另一部分被激光结晶
公开(公告)号：US5624851A
公开(公告)日：1997-04-29
申请号：US207173
申请日：1994-03-08
申请人： Toru Takayama , Hongyong Zhang , Yasuhiko Takemura
发明人： Toru Takayama , Hongyong Zhang , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L21/322 , H01L21/324 , H01L21/336
CPC分类号： H01L21/2022 , H01L27/1214 , H01L27/1229 , H01L27/1277
摘要： A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ordinary crystallization temperature of an amorphous silicon film; and then crystallizing the rest of the portions by irradiating thereto laser beam or an intense light having an intensity equivalent thereto. A process similar to the one above, wherein, the catalytic element is incorporated directly into the amorphous silicon film instead of bringing a substance containing the same into contact with the amorphous silicon film.
摘要翻译：一种半导体电路及其制造方法，所述方法包括与非晶硅膜接触，含有催化元素的物质; 通过在比非晶硅膜的普通结晶温度低的温度下对所述膜进行退火，使非晶硅膜的选定部分结晶; 然后通过向其上照射激光束或具有与其强度相当的强度的光来结晶其余部分。类似于上述方法的方法，其中催化元素直接并入非晶硅膜中，而不是使含有该催化剂的物质与非晶硅膜接触。

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