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    • 81. 发明授权
    • Electron beam lithographic method and apparatus
    • 电子束光刻方法和装置
    • US5451487A
    • 1995-09-19
    • US209360
    • 1994-03-14
    • Takayuki AbeSatoshi Yamasaki
    • Takayuki AbeSatoshi Yamasaki
    • H01L21/027H01J37/302G03F7/20
    • H01J37/3026H01J2237/31769Y10S430/143
    • In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.
    • 在包括基于重影法的校正辐射步骤的电子束光刻方法中,整个校正区域被划分为小的区域,每个区域的尺寸小于电子束的后向散射的扩展,并且大于可以是 画。 当各小区域中的辐射单元图形数量小于将小区域中的期望图案绘制为黑/白反转图案时要执行的辐射次数,则设置代表性图形。 对各小区域的代表性数字设定曝光剂量。 电子束散焦以将光束尺寸增加到与后向散射的扩展大致一致的尺寸,并且以设定的曝光剂量绘制各个小区域中的代表性图形。
    • 82. 发明授权
    • Charged particle litography method and apparatus
    • 带电粒子方法和装置
    • US5305225A
    • 1994-04-19
    • US876426
    • 1992-04-30
    • Toshio YamaguchiSatoshi YamasakiTakayuki Abe
    • Toshio YamaguchiSatoshi YamasakiTakayuki Abe
    • H01J37/302G06F15/46H01J37/304
    • H01J37/3026
    • In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.
    • 在用电子束照射样品以在样品上画出所需图案的电子束光刻方法中,表示基本数字形状的图形数据,表示图形数据的放置信息的放置数据和表示每个 通过划分比电子束的后向散射加宽的绘制区域获得的区域被独立地存储在作为绘图数据的存储器中。 基于图形数据,图形数据被划分为各自具有预定形状且小于预定尺寸的单位图形。 计算每个单位图的表示点,从存在表示点的区域的数据集中获得电子束的剂量,并且将辐射量确定为单位图的剂量。
    • 85. 发明授权
    • Switch
    • 开关
    • US08796574B2
    • 2014-08-05
    • US13256948
    • 2011-03-23
    • Shigenobu KishiYuya KudoTakayuki AbeKenichi AndoHidemi Nakamura
    • Shigenobu KishiYuya KudoTakayuki AbeKenichi AndoHidemi Nakamura
    • H01H5/08
    • H01H5/08H01H5/24H01H13/30H01H13/42
    • A switch includes a movable contact piece having one end as a supporting point of turn and the other end arranged with a movable contact, a turning member having the other end as a supporting point of turn, a coil spring having one end locked to one end of the turning member and the other end locked to an intermediate portion of the movable contact piece, and a push button supported and slidable in an up and down direction. The movable contact piece is inverted by pushing down the one end of the turning member with the push button so as to make the movable contact approach and separate from a fixed contact. The turning member includes a position regulating portion that is brought into contact with the coil spring and brings the movable contact into contact with the fixed contact while maintaining a contact state with the coil spring.
    • 开关包括一端作为支撑点的可动接触片,另一端配置有可动触点,另一端作为支撑点转动的转动构件,一端锁定在一端的螺旋弹簧 并且另一端锁定到可动接触片的中间部分,以及按钮,其在上下方向上被支撑和滑动。 通过用按钮向下推动转动构件的一端来使可动接触件反转,以使可动接点接近并与固定接触件分离。 转动构件包括与螺旋弹簧接触的位置限制部,并且使活动触点与固定触点接触,同时保持与螺旋弹簧的接触状态。
    • 89. 发明授权
    • Method for resizing pattern to be written by lithography technique, and charged particle beam writing method
    • 用于通过光刻技术来调整图案的尺寸的方法,以及带电粒子束写入方法
    • US08429575B2
    • 2013-04-23
    • US13275448
    • 2011-10-18
    • Jun YashimaJunichi SuzukiTakayuki Abe
    • Jun YashimaJunichi SuzukiTakayuki Abe
    • G06F17/50
    • H01J37/3174B82Y10/00B82Y40/00H01J37/3026
    • A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.
    • 通过使用光刻技术来调整要写入的图案的尺寸的方法包括:对通过将目标工件的写入区域进行实际分割而形成的每个小区域,计算用于校正由负载效应引起的尺寸误差的图案的第一维度校正量 基于每个小区域的面积密度预定尺寸的网格,根据要写入每个小区域的图案的线宽度尺寸来计算第二维度校正量,通过使用来校正第一维度校正量 第二维度校正量,并且通过使用校正的第一维度校正量来调整图案的线宽度尺寸,并输出调整大小的结果。
    • 90. 发明授权
    • Method and apparatus for writing
    • 写作方法和装置
    • US08309283B2
    • 2012-11-13
    • US12649846
    • 2009-12-30
    • Yasuo KatoJun YashimaHiroshi MatsumotoTomoo MotosugiTomohiro IijimaTakayuki Abe
    • Yasuo KatoJun YashimaHiroshi MatsumotoTomoo MotosugiTomohiro IijimaTakayuki Abe
    • G03C5/00
    • G03F1/68B82Y10/00B82Y40/00G21K1/025H01J37/3174
    • A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.
    • 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量,对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量,以计算用于校正雾化效果的雾化效果校正剂量 带电粒子束写入,并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度,合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域,并且通过使用基于合成校正剂量的带电粒子束将目标物体上的图案写入。