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81. 发明授权

US4853785A Electronic camera including electronic signal storage cartridge 失效
标题翻译：电子相机包括电子信号存储盒
公开(公告)号：US4853785A
公开(公告)日：1989-08-01
申请号：US197353
申请日：1988-05-23
申请人： Stanford R. Ovshinsky , Lawrence G. Norris
发明人： Stanford R. Ovshinsky , Lawrence G. Norris
IPC分类号： H01L27/146 , H01L27/148 , H04N5/225 , H04N5/372
CPC分类号： H01L27/14665 , H04N5/225 , H04N5/335
摘要： An electronic camera system, which system comprises the combination of an image digitizer media and a digital signal storage media. The camera includes an x-y matrix formed of a thin film photosensor array of small area photosensitive elements capable of providing high resolution digitized electrical signal corresponding to an image projected thereon. The storage media is preferably formed as a layer of phase change optical memory material deposited upon an elongated tape or disc-like number and disposed in a cartridge-like housing which is removably positioned in the camera adjacent a writing mechanism such as a multi-headed laser. By utilizing multiple lasers, it is possible to simultaneously write on the entire width of the tape or disc for increasing processing speed.
摘要翻译：一种电子照相机系统，该系统包括图像数字转换器介质和数字信号存储介质的组合。照相机包括由能够提供与投射在其上的图像相对应的高分辨率数字化电信号的小面积感光元件的薄膜光电传感器阵列形成的x-y矩阵。存储介质优选地形成为沉积在细长带或盘状数字上的相变光学存储材料层，并且设置在盒状壳体中，该壳体壳体可移除地定位在相机中的写入机构（例如多头激光。通过利用多个激光器，可以在带或盘的整个宽度上同时写入以提高处理速度。

82. 发明授权

US4816082A Thin film solar cell including a spatially modulated intrinsic layer 失效
标题翻译：薄膜太阳能电池包括空间调制的本征层
公开(公告)号：US4816082A
公开(公告)日：1989-03-28
申请号：US87264
申请日：1987-08-19
申请人： Subhendu Guha , Chi-Chung Yang , Stanford R. Ovshinsky
发明人： Subhendu Guha , Chi-Chung Yang , Stanford R. Ovshinsky
IPC分类号： H01L31/04 , H01L31/065 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , H01L31/065 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

83. 发明授权

US4788594A Solid state electronic camera including thin film matrix of photosensors 失效
标题翻译：固态电子照相机包括光电传感器的薄膜矩阵
公开(公告)号：US4788594A
公开(公告)日：1988-11-29
申请号：US918952
申请日：1986-10-15
申请人： Stanford R. Ovshinsky , Lawrence G. Norris
发明人： Stanford R. Ovshinsky , Lawrence G. Norris
IPC分类号： H01L27/146 , H04N5/225 , H04N3/14
CPC分类号： H04N5/335 , H01L27/14665 , H04N5/225
摘要： A thin film photosensor array for an electronic camera, said array adapted to provide an electrical signal corresponding to an image projected thereon. The photosensor array is preferably fabricated as a large area matrix of thin film, small area photosensitive elements capable of providing high resolution output in response to input from conventional camera optical systems. The photosensor array can be specifically tailored to provide color output or particular spectral sensitivity.
摘要翻译：一种用于电子照相机的薄膜光电传感器阵列，所述阵列适于提供对应于投射在其上的图像的电信号。优选地，光传感器阵列被制造为能够响应于常规照相机光学系统的输入而提供高分辨率输出的薄膜薄片小面积感光元件的大面积矩阵。可以专门设计光传感器阵列以提供颜色输出或特定的光谱灵敏度。

84. 发明授权

US4696758A Gas mixtures for the vapor deposition of semiconductor material 失效
公开(公告)号：US4696758A
公开(公告)日：1987-09-29
申请号：US897236
申请日：1986-10-06
申请人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi Chung Yang , Jeffrey Fournier , James Kulman
发明人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi Chung Yang , Jeffrey Fournier , James Kulman
IPC分类号： H01L31/04 , H01L21/205 , C09K11/07
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

85. 发明授权

US4624902A Coatings for electrochemical electrodes and methods of making the same 失效
标题翻译：电化学电极用涂料及其制造方法
公开(公告)号：US4624902A
公开(公告)日：1986-11-25
申请号：US769857
申请日：1985-08-26
申请人： John P. deNeufville , Dalbir Rajoria , Stanford R. Ovshinsky
发明人： John P. deNeufville , Dalbir Rajoria , Stanford R. Ovshinsky
IPC分类号： H01M2/16 , H01M4/02 , H01M4/24 , H01M4/36 , H01M4/38 , H01M4/66 , H01M6/14 , H01M10/36
CPC分类号： H01M4/13 , H01M10/36 , H01M4/242 , H01M4/364 , H01M6/14 , H01M2/1673 , H01M2004/027 , H01M2300/0002 , H01M2300/0005 , H01M2300/0014 , H01M2300/0017 , H01M2300/002 , H01M2300/0025 , H01M2300/0048 , H01M4/383 , H01M4/661 , H01M4/663 , H01M4/669
摘要： The present invention provides a coating for electrodes for use in electrochemical cells having an electrochemically active species and an electrolyte. The coating includes a selectively permeable material which allows for the diffusion of the active species through the coating during operation of the cell while providing a substantially impervious barrier to the electrolyte. Electrodes utilizing the coatings described herein may be used in primary and secondary cells over a wide range of operating temperatures to deliver better electrochemical performance even at room temperature. Methods of making the coating and an apparatus for performing these methods on a continuous basis are included in the present invention. A novel composition of matter also is contemplated containing lithium, silicon, fluorine prepared by exposing lithium metal to SiF.sub.4.
摘要翻译：本发明提供一种用于具有电化学活性物质和电解质的电化学电池的电极用涂层。涂层包括选择性渗透材料，其允许活性物质在细胞操作期间通过涂层扩散，同时为电解质提供基本上不可渗透的屏障。使用本文所述的涂层的电极可以在宽的工作温度范围内用于初级和次级电池中，以便甚至在室温下也能提供更好的电化学性能。制造涂层的方法和连续进行这些方法的装置包括在本发明中。还考虑了一种新颖的物质组合物，其包含通过将锂金属暴露于SiF 4而制备的锂，硅，氟。

86. 发明授权

US4597162A Method for making, parallel preprogramming or field programming of electronic matrix arrays 失效
标题翻译：电子矩阵阵列的制作，并行预编程或现场编程的方法
公开(公告)号：US4597162A
公开(公告)日：1986-07-01
申请号：US785367
申请日：1985-10-07
申请人： Robert R. Johnson , Stanford R. Ovshinsky
发明人： Robert R. Johnson , Stanford R. Ovshinsky
IPC分类号： H01L27/24 , H01L45/00 , H01L21/46
CPC分类号： H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1213 , H01L45/1233 , H01L45/144
摘要： A method of making a parallel programmed electronic matrix array including the steps of forming at least one layer of a phase changeable material on a conductive substrate, wherein the phase changeable material has a substantially nonconductive state and a comparatively high conductive state. The layer is formed in one of the states. The method also includes irradiating selected areas of the layer to simultaneously convert the selected areas of the layer to the other one of the states to form selected substantially nonconductive layer portions and selected comparatively high conductive layer portions. Thereafter, in a preprogrammed embodiment, first and second sets of electrically conductive address lines are formed on respective opposite sides of the layer. The address lines of the first and second sets are formed for crossing at an angle to form a plurality of crossover points with the selected substantially nonconductive layer portions and the selected comparatively high conductive layer portions therebetween. In a field programmable array, the areas are irradiated through one set of lines.
摘要翻译：一种制造并行编程电子矩阵阵列的方法，包括以下步骤：在导电基底上形成至少一层相变材料，其中所述相变材料具有基本非导电状态和较高导电状态。该层形成于其中一个状态。该方法还包括照射层的选定区域以同时将层的选定区域转换为另一种状态，以形成选定的基本上非导电层部分和选择的相对较高的导电层部分。此后，在预编程实施例中，第一组和第二组导电地址线形成在该层的相应相对侧上。第一组和第二组的地址线形成为以一定角度交叉以形成多个具有所选择的基本上非导电层部分的交叉点和其间选择的相对较高的导电层部分。在现场可编程阵列中，通过一组线照射这些区域。

87. 发明授权

US4487818A Fuel cell anode based on a disordered catalytic material 失效
标题翻译：基于无序催化材料的燃料电池阳极
公开(公告)号：US4487818A
公开(公告)日：1984-12-11
申请号：US399876
申请日：1982-07-19
申请人： Stanford R. Ovshinsky , Krishna Sapru , Arie Reger
发明人： Stanford R. Ovshinsky , Krishna Sapru , Arie Reger
IPC分类号： B01J23/00 , H01M4/86 , H01M4/90
CPC分类号： H01M4/9041 , H01M4/8621 , H01M4/90 , H01M2004/8684
摘要： An anode for hydrogen oxidation in a fuel cell is formed from a host matrix including at least one transition element which is structurally modified by the incorporation of at least one modifier element to improve its catalytic properties. The catalytic body is based on a disordered non-equilibrium material designed to have a high density of catalytically active sites, resistance to poisoning, and long operating life. Modifier elements, including Ti, Mo, Zr, Mg, V, Si or Al, structurally modify the local chemical environments of a nickel or other transition element host matrix to form the catalytic materials of the anode. The improved low overvoltage catalytic materials of the anode of the present invention increase the operating efficiencies of fuel cells employing such anodes. The catalytic materials can be deposited as a layer on the surface of porous electrode substrates to form a gas diffusion anode or can be formed as a gas diffusion electrode.
摘要翻译：在燃料电池中用于氢氧化的阳极由包含至少一个过渡元素的主体基质形成，所述过渡元素通过结合至少一种改性剂元素进行结构改性以改善其催化性能。催化体基于无定形非平衡材料，其设计具有高密度的催化活性位点，耐中毒性和长使用寿命。包括Ti，Mo，Zr，Mg，V，Si或Al的改性元素在结构上改变镍或其它过渡元素主体基质的局部化学环境以形成阳极的催化材料。本发明阳极改进的低过电压催化材料增加了采用这种阳极的燃料电池的运行效率。催化材料可以作为多孔电极基板的表面上的层来形成气体扩散阳极，或者可以形成为气体扩散电极。

88. 发明授权

US4409605A Amorphous semiconductors equivalent to crystalline semiconductors 失效
公开(公告)号：US4409605A
公开(公告)日：1983-10-11
申请号：US427688
申请日：1982-09-29
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrogen, both of which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. The silicon and/or other elements of the host matrix film are deposited by the glow discharge decomposition of gaseous compounds preferably with fluorine as one element of a compound, the hydrogen and other compensating and altering material being preferably a molecular gas or an element of a compound of silicon or other host matrix element.

89. 发明授权

US4379943A Current enhanced photovoltaic device 失效
标题翻译：电流增强型光伏器件
公开(公告)号：US4379943A
公开(公告)日：1983-04-12
申请号：US330571
申请日：1981-12-14
申请人： Chi C. Yang , Arun Madan , Stanford R. Ovshinsky , David Adler
发明人： Chi C. Yang , Arun Madan , Stanford R. Ovshinsky , David Adler
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06 , H01L31/18
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.
摘要翻译：本公开涉及具有增强的短路电流和效率的光伏器件。这些器件通过在先前沉积的掺杂非晶半导体合金层上沉积本体非晶半导体合金制成，该本体非晶半导体合金包括由非蚀刻起始材料的沉积和不同的第二本征层形成的与掺杂层相邻的第一本征层在第一本征层的组成中。第二本征层优选包括硅和氟，而第一本征非晶合金层不包括氟。第一本征层可以由单独的硅烷气体的辉光放电分解形成。第一本征层和第二本征层的厚度被调整以使其相应的电位滴与第二本征层相比第一本征层相对较薄。

90. 发明授权

US4178415A Modified amorphous semiconductors and method of making the same 失效
标题翻译：改性非晶半导体及其制造方法
公开(公告)号：US4178415A
公开(公告)日：1979-12-11
申请号：US888915
申请日：1978-03-22
申请人： Stanford R. Ovshinsky , Krishna Sapru
发明人： Stanford R. Ovshinsky , Krishna Sapru
IPC分类号： H01L29/73 , H01L21/203 , H01L21/205 , H01L21/331 , H01L29/04 , H01L29/167 , H01L29/30 , H01L31/04 , H01L35/14 , H01L35/22 , H01B1/02
CPC分类号： H01L21/02532 , H01L21/02631 , H01L29/04 , H01L29/167 , H01L35/22
摘要： An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.
摘要翻译：非晶半导体膜包括诸如硅或硅和氧的非晶半导体主体基质，以及包含碱金属（例如锂）的改性材料，其通过其共沉积合并在其中。掺入无定形主体基质中的改性剂材料控制膜的导电性和与其相关的其它现象。

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