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81. 发明授权

US07923730B2 Thin film transistor and semiconductor device 有权
公开(公告)号：US07923730B2
公开(公告)日：2011-04-12
申请号：US12273027
申请日：2008-11-18
申请人： Hiromichi Godo , Hidekazu Miyairi
发明人： Hiromichi Godo , Hidekazu Miyairi
IPC分类号： H01L29/10
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film formation but in a layer with high crystallinity which is formed later in a microcrystalline semiconductor film. Further, the layer including an impurity element is used as a channel formation region. Furthermore, a layer which does not include an impurity element imparting one conductivity type or a layer which has an impurity element imparting one conductivity type at an extremely lower concentration than other layers, is provided between a pair of semiconductor films including an impurity element functioning as a source region and a drain region and the layer including an impurity element functioning as a channel formation region.

82. 发明申请

US20090020815A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20090020815A1
公开(公告)日：2009-01-22
申请号：US12219027
申请日：2008-07-15
申请人： Hiromichi Godo
发明人： Hiromichi Godo
IPC分类号： H01L29/00 , H01L21/425
CPC分类号： H01L27/1266 , H01L21/84 , H01L27/1214 , H01L29/04 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. The semiconductor device can suppress the punch-through current by forming a semiconductor film in which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted over a substrate having an insulating surface, and forming a channel formation region using a semiconductor film of stacked layers obtained by bonding a single crystal semiconductor film to the semiconductor film by an SOI technique.
摘要翻译：本发明的目的是提供一种半导体器件，其具有不仅可以实现穿通电流的抑制，而且可以实现在使用SOI技术的半导体器件的制造中重新使用用于接合的硅晶片的结构，以及其制造方法。半导体器件可以通过形成半导体膜来抑制穿通电流，其中将具有与源极区和漏极区相反的导电类型的杂质注入到具有绝缘表面的衬底上，并且形成沟道形成区使用通过SOI技术将单晶半导体膜接合到半导体膜而获得的堆叠层的半导体膜。

83. 发明申请

US20080220570A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080220570A1
公开(公告)日：2008-09-11
申请号：US12073618
申请日：2008-03-07
申请人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
发明人： Hideto Ohnuma , Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02675 , H01L21/02691 , H01L27/1281
摘要： A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The THF of the present invention is characterized by its semiconductor layer where the thickness of the source region or the drain region is larger than that of the channel formation region. Manufacture of the TFT is readily achieved by the formation of an amorphous semiconductor layer on a projection portion and a depression portion, which is followed by subjecting the melting process of the semiconductor layer, resulting in the formation of a crystalline semiconductor layer having different thicknesses. Selective addition of impurity to the thick portion of the semiconductor layer provides a semiconductor layer in which the channel formation region is thinner than the source or drain region.
摘要翻译：示出了具有低亚阈值摆动和抑制导通电流下降的高响应性薄膜晶体管（TFT）的半导体器件及其制造方法。本发明的THF的特征在于其源区域或漏极区域的厚度大于沟道形成区域的厚度的半导体层。通过在突起部分和凹陷部分上形成非晶半导体层来容易地实现TFT的制造，随后对半导体层进行熔化处理，形成具有不同厚度的晶体半导体层。选择性地向半导体层的厚部分添加杂质提供了沟道形成区域比源区或漏区更薄的半导体层。

84. 发明申请

US20070210379A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070210379A1
公开(公告)日：2007-09-13
申请号：US11713620
申请日：2007-03-05
申请人： Hiromichi Godo
发明人： Hiromichi Godo
IPC分类号： H01L29/76
CPC分类号： H01L29/66757 , H01L27/1255 , H01L29/78675
摘要： It is an object to reduce the effect of a characteristic of the edge portion of a channel forming region in a semiconductor film, on a transistor characteristic. An island-like semiconductor film is formed over a substrate, and a conductive film forming a gate electrode provided over the island-like semiconductor film with a gate insulating film interposed therebetween, is formed over the semiconductor film. In the semiconductor film, a channel forming region, a first impurity region forming a source or drain region, and a second impurity region are provided. The channel forming region is provided in a region which overlaps with the gate electrode crossing the island-like semiconductor film, the first impurity region is provided so as to be adjacent to the channel forming region, and the second impurity region is provided so as to be adjacent to the channel forming region and the first impurity region. The first impurity region and the second impurity region are provided so as to have different conductivity, and the second impurity region and the channel forming region are made to have different conductivity or to have different concentration of an impurity element contained in the second impurity region and the channel forming region in a case of having the same conductivity.
摘要翻译：本发明的目的是减小半导体膜中的沟道形成区域的边缘部分的特性对晶体管特性的影响。在衬底上形成岛状半导体膜，并且在半导体膜上形成形成设置在岛状半导体膜上的栅极的导电膜，其间插入有栅极绝缘膜。在半导体膜中，设置沟道形成区域，形成源区或漏区的第一杂质区和第二杂质区。通道形成区域设置在与栅极电极交叠的区域中，与岛状半导体膜交叉，第一杂质区域设置成与沟道形成区域相邻，并且第二杂质区域被设置为与沟道形成区域和第一杂质区域相邻。第一杂质区域和第二杂质区域被设置为具有不同的导电性，并且使第二杂质区域和沟道形成区域具有不同的导电性或者使第二杂质区域中包含的杂质元素的浓度不同，以及在具有相同导电性的情况下的沟道形成区域。

85. 发明授权

US09799773B2 Transistor and semiconductor device 有权
公开(公告)号：US09799773B2
公开(公告)日：2017-10-24
申请号：US13358556
申请日：2012-01-26
申请人： Hiromichi Godo , Satoshi Kobayashi , Masashi Tsubuku
发明人： Hiromichi Godo , Satoshi Kobayashi , Masashi Tsubuku
IPC分类号： H01L29/78 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384
摘要： A transistor which withstands a high voltage and controls large electric power can be provided. A transistor is provided which includes a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode, and a source electrode and a drain electrode which are in contact with the oxide semiconductor layer and whose end portions overlap with the gate electrode. The gate insulating layer includes a first region overlapping with the end portion of the drain electrode and a second region adjacent to the first region. The first region has smaller capacitance than the second region.

86. 发明授权

US09202929B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09202929B2
公开(公告)日：2015-12-01
申请号：US12972859
申请日：2010-12-20
申请人： Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
发明人： Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78696 , H01L29/66765 , H01L29/786 , H01L29/78663
摘要： An object is to increase the on-state current of a thin film transistor. A solution is to provide a projection in a back-channel portion of the thin film transistor. The projection is provided so as to be off a tangent in the back-channel portion between a source or a drain and a channel formation region. With the projection, a portion where electric charge is trapped and a path of the on-state current can be apart from each other, so that the on-state current can be increased. The shape of a side surface of the back-channel portion may be curved, or may be represented as straight lines in a cross section. Further, a method for forming such a shape by performing one etching step is provided.
摘要翻译：目的是增加薄膜晶体管的导通电流。解决方案是在薄膜晶体管的后通道部分中提供投影。突起被设置成在源极或漏极之间的后部沟道部分和沟道形成区域之间切断切线。通过投影，电荷被捕获的部分和导通状态电流的路径可以彼此分开，从而可以增加导通电流。背沟道部分的侧表面的形状可以是弯曲的，或者可以在横截面中表示为直线。此外，提供了通过执行一个蚀刻步骤来形成这种形状的方法。

87. 发明授权

US08916866B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08916866B2
公开(公告)日：2014-12-23
申请号：US13279868
申请日：2011-10-24
申请人： Hiromichi Godo , Satoshi Kobayashi
发明人： Hiromichi Godo , Satoshi Kobayashi
IPC分类号： H01L29/786 , H01L21/00
CPC分类号： H01L29/7869 , H01L29/78648
摘要： A semiconductor device includes a first gate electrode; a gate insulating layer covering the first gate electrode; an oxide semiconductor layer that overlaps with the first gate electrode; oxide semiconductor layers having high carrier density covering end portions of the oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layers having high carrier density; an insulating layer covering the source electrode, the drain electrode, and the oxide semiconductor layer; and a second gate electrode that is in contact with the insulating layer. Each of the oxide semiconductor layers is in contact with part of each of an upper surface, a lower surface, and a side surface of one of the end portions of the oxide semiconductor layer and part of an upper surface of the gate insulating layer.
摘要翻译：半导体器件包括第一栅电极; 覆盖所述第一栅电极的栅极绝缘层; 与所述第一栅电极重叠的氧化物半导体层; 具有覆盖氧化物半导体层的端部的高载流子密度的氧化物半导体层; 与具有高载流子密度的氧化物半导体层接触的源电极和漏电极; 覆盖源电极，漏电极和氧化物半导体层的绝缘层; 以及与绝缘层接触的第二栅电极。每个氧化物半导体层与氧化物半导体层的一个端部和栅极绝缘层的上表面的一部分的上表面，下表面和侧表面的一部分接触。

88. 发明授权

US08704267B2 Light-emitting display device 有权
标题翻译：发光显示装置
公开(公告)号：US08704267B2
公开(公告)日：2014-04-22
申请号：US12579486
申请日：2009-10-15
申请人： Hiromichi Godo
发明人： Hiromichi Godo
IPC分类号： H01L33/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： The light-emitting display device comprises first and second thin film transistors. The first thin film transistor includes a first gate electrode; a first oxide semiconductor film; and a first electrode and a second electrode which are electrically connected to the first oxide semiconductor film. The second thin film transistor includes a second gate electrode electrically connected to the second electrode; a second oxide semiconductor film; a third electrode; a light-emitting layer and a fourth electrode over the second oxide semiconductor film. A work function of the second oxide semiconductor film is higher than a work function of the fourth electrode.
摘要翻译：发光显示装置包括第一和第二薄膜晶体管。第一薄膜晶体管包括第一栅电极; 第一氧化物半导体膜; 以及与第一氧化物半导体膜电连接的第一电极和第二电极。第二薄膜晶体管包括与第二电极电连接的第二栅电极; 第二氧化物半导体膜; 第三电极; 第二氧化物半导体膜上的发光层和第四电极。第二氧化物半导体膜的功函数高于第四电极的功函数。

89. 发明授权

US08643009B2 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device 有权
标题翻译：晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法
公开(公告)号：US08643009B2
公开(公告)日：2014-02-04
申请号：US13602393
申请日：2012-09-04
申请人： Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
发明人： Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78669 , H01L29/78696
摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.
摘要翻译：为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层，不提供硅层。

90. 发明授权

US08546810B2 Thin film transistor, display device, and electronic appliance 有权
标题翻译：薄膜晶体管，显示设备和电子设备
公开(公告)号：US08546810B2
公开(公告)日：2013-10-01
申请号：US12788343
申请日：2010-05-27
申请人： Hidekazu Miyairi , Yasuhiro Jinbo , Hiromichi Godo , Takafumi Mizoguchi , Shinobu Furukawa
发明人： Hidekazu Miyairi , Yasuhiro Jinbo , Hiromichi Godo , Takafumi Mizoguchi , Shinobu Furukawa
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66765
摘要： A thin film transistor in which an effect of photo current is small and an On/Off ratio is high is provided. In a bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region overlaps with a gate electrode, a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer. A semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably overlap with each other in a region where they overlap with the gate electrode. The first impurity semiconductor layer and the second impurity semiconductor layer preferably overlap with each other in a region where they do not overlap with the gate electrode.
摘要翻译：提供其中光电流的作用小且开/关比高的薄膜晶体管。在底栅底接触（共面）薄膜晶体管中，沟道形成区域与栅电极重叠，在沟道形成区域和与布线接触的第二杂质半导体层之间设置第一杂质半导体层层。用作沟道形成区域和第一杂质半导体层的半导体层优选在与栅电极重叠的区域中彼此重叠。第一杂质半导体层和第二杂质半导体层优选在不与栅电极重叠的区域中彼此重叠。

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