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81. 发明授权

US06414975B1 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same 失效
标题翻译：具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件
公开(公告)号：US06414975B1
公开(公告)日：2002-07-02
申请号：US09048048
申请日：1998-03-26
申请人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
发明人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
IPC分类号： H01S500
CPC分类号： H01L33/40 , H01L33/28 , H01L33/285
摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
摘要翻译：本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。然后在其上形成Na 2 Se的碱性化合物层。随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。此外，在接触层上形成p侧电极。接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。由于操作功率的降低，设备寿命得到改善。

82. 发明授权

US06383622B1 Slider formed of fiber-reinforced thermoplastic resin 失效
公开(公告)号：US06383622B1
公开(公告)日：2002-05-07
申请号：US09324766
申请日：1999-06-03
申请人： Akira Ishibashi , Mamoru Tanaka , Mutsuo Hirota , Yoshifumi Miyajima
发明人： Akira Ishibashi , Mamoru Tanaka , Mutsuo Hirota , Yoshifumi Miyajima
IPC分类号： A44B1900
CPC分类号： C08J5/10 , A44B19/26 , C08J5/04 , C08J5/041 , C08J5/042 , C08J5/043 , C08K7/02 , C08L67/02 , C08L69/00 , C08L77/00 , Y10T24/25 , Y10T24/2561 , Y10T428/24994 , Y10T428/249945 , Y10T428/249946 , C08L23/00 , C08L27/12
摘要： A formed article of fiber-reinforced thermoplastic resin which has been adapted for use in a sliding member by restoring the wear resistance once degraded by the addition of reinforcing fibers to the normal level is disclosed. This formed article comprises a fiber-reinforced resin material of a thermoplastic resin containing reinforcing fibers and incorporating therein additionally as a sliding property-imparting agent a material having a storage elastic modulus in the range of 3.5×108 Pa to 5.0×108 Pa in a service temperature range of 30° C. to 70° C. The ratio of incorporation of the sliding property-imparting agent is properly in the range of 4 to 10% by weight when the matrix resin is a polyamide-based resin or 4 to 20% by weight when the matrix resin is a thermoplastic resin other than the polyamide-based resin, respectively based on the total weight of the resin and the reinforcing fibers.

83. 发明授权

US06258811B1 Methods for preventing, inhibiting or treating graft rejection reactions in graft-versus-host disease (GVHD) and organ transplantation 失效
标题翻译：在移植物抗宿主病（GVHD）和器官移植中预防，抑制或治疗移植排斥反应的方法
公开(公告)号：US06258811B1
公开(公告)日：2001-07-10
申请号：US09269924
申请日：1999-04-02
申请人： Toshihiko Yamauchi , Akira Ishibashi , Naoki Tokuhara , Mitsuo Nagai
发明人： Toshihiko Yamauchi , Akira Ishibashi , Naoki Tokuhara , Mitsuo Nagai
IPC分类号： A61K3150
CPC分类号： A61K31/498 , A61K31/192 , A61K31/203 , A61K31/4025
摘要： The present invention provides remedies for graft-versus-host disease (GVHD) and graft rejection reactions in organ transplantation which comprise retinoic acid receptor (RAR) agonists as an active ingredient. Main examples thereof include 9-(4-methoxy-2,3,6-trimethylphenyl)-7,8-dimethylnona-2,4,6,8-tetraen-1-oic acid, 4-[(E)-2-(5,6,7,8-tetrahydro-5,5,8,8-tetramethylnaphthalen-2-yl)propenyl]benzoic acid, 4-{2-[5-(4,7-dimethylbenzofuran-2-yl)pyrroyl]}benzoic acid, 4-{2-[5-(5-chloro-7-ethylbenzofuran-2-yl)pyrrolyl]}benzoic acid and 4-{2-[5-(4,7-dimethylbenzothiophen-2-yl)pyrrolyl]}benzoic acid.
摘要翻译：本发明提供了包含视黄酸受体（RAR）激动剂作为活性成分的器官移植中的移植物抗宿主病（GVHD）和移植排斥反应的补救措施。其主要实例包括9-（4-甲氧基-2,3,6-三甲基苯基）-7,8-二甲基 - 2,4,6,8-四烯-1-酸，4 - [（E）-2- （5,6,7,8-四氢-5,5,8,8-四甲基萘-2-基）丙烯基]苯甲酸，4- {2- [5-（4,7-二甲基苯并呋喃-2-基）吡咯基 ]}苯甲酸，4- {2- [5-（5-氯-7-乙基苯并呋喃-2-基）吡咯基]}苯甲酸和4- {2- [5-（4,7-二甲基苯并噻吩-2-基））吡咯基]}苯甲酸。

84. 发明授权

US06177690B1 Semiconductor light emitting device having a p-n or p-i-n junction 有权
标题翻译：具有p-n或p-i-n结的半导体发光器件
公开(公告)号：US06177690B1
公开(公告)日：2001-01-23
申请号：US09190436
申请日：1998-11-13
申请人： Hiroyasu Noguchi , Eisaku Kato , Akira Ishibashi
发明人： Hiroyasu Noguchi , Eisaku Kato , Akira Ishibashi
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , H01L33/0012 , H01S5/305 , H01S5/3086 , H01S5/347
摘要： A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value Pmax is x=0, and the range of x satisfying P(x)>Pmax/e2 is −Ln −Ln is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x
摘要翻译：具有良好特性，高可靠性和长寿命的半导体发光器件包括通过将有源层定位在n型掺杂层或p型掺杂层内的位于与耗尽层之间充分远的位置的pn结或pin结 p型掺杂层和n型掺杂层。当来自有源层垂直于有源层的光的强度分量为P（x）时，其最大值Pmax的x为x = 0，满足P（x）> Pmax / e2的x的范围为-Ln 具有pn结的半导体发光器件中的 nn掺杂的至少一部分的掺杂浓度低于n型掺杂的另一部分的掺杂浓度 p型掺杂层的至少一部分的掺杂浓度，其中x

85. 发明授权

US6031244A Luminescent semiconductor device with antidiffusion layer on active layer surface 失效
标题翻译：在有源层表面具有防扩散层的发光半导体器件
公开(公告)号：US6031244A
公开(公告)日：2000-02-29
申请号：US987105
申请日：1997-12-08
申请人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
发明人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
IPC分类号： H01L33/28 , H01L33/00
CPC分类号： H01L33/28
摘要： A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.
摘要翻译：发光半导体器件包括：由II-VI族半导体器件组成的有源层，其包含选自锌，镁，铍，镉，锰和汞中的至少一种II族元素，以及至少一种VI族元素选自氧，硫，硒和碲。形成所述活性层的II-VI族化合物半导体含有选自镁，铍和镉中的至少一种元素作为第II族元素，碲作为VI族元素。至少一个防扩散层防止这些元件从活性层扩散到活性层的至少一个表面上。

86. 发明授权

US5657336A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5657336A
公开(公告)日：1997-08-12
申请号：US508966
申请日：1995-07-28
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

87. 发明授权

US5617446A Surface-emitting semiconductor light emitting device 失效
标题翻译：表面发射半导体发光器件
公开(公告)号：US5617446A
公开(公告)日：1997-04-01
申请号：US499894
申请日：1995-07-11
申请人： Akira Ishibashi , Norikazu Nakayama , Satoru Kijima
发明人： Akira Ishibashi , Norikazu Nakayama , Satoru Kijima
IPC分类号： H01L33/06 , H01L33/12 , H01L33/28 , H01L33/38 , H01L33/42 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/327 , H01S5/347 , H01S3/19
CPC分类号： H01L33/42 , B82Y20/00 , H01L33/14 , H01L33/28 , H01L33/38 , H01S5/0421 , H01S5/0425 , H01S5/183 , H01S5/327 , H01S5/347
摘要： A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.
摘要翻译：表面发射半导体发光器件包括n型ZnSe缓冲层，n型ZnSSe层，n型ZnMgSSe覆层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型 ZnMgSSe覆层，p型ZnSSe层，p型ZnSe接触层，p型ZnSe / ZnTe MQW层和p型ZnTe接触层，依次层叠在n型GaAs衬底上。在p型ZnTe接触层上设置有形成p侧电极的栅状p侧电极和Au膜。在n型GaAs衬底的背面设有n侧电极。活性层具有单量子阱结构或包含ZnCdSe量子阱层的多量子结构。

88. 发明授权

US5506855A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5506855A
公开(公告)日：1996-04-09
申请号：US338087
申请日：1994-11-09
申请人： Akira Ishibashi , Shoji Kanamaru , Hiroyuki Okuyama , Shunji Imanaga
发明人： Akira Ishibashi , Shoji Kanamaru , Hiroyuki Okuyama , Shunji Imanaga
IPC分类号： H01S5/00 , H01S5/042 , H01S5/327 , H01S3/18
CPC分类号： H01S5/327
摘要： A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y compound semiconductor where 0.ltoreq.x
摘要翻译：公开了使用II-VI化合物半导体并能够发射蓝色至紫外光的半导体激光器。半导体激光器被配置为夹杂由Zn x M 1-x Se y Si 1-y化合物半导体制成的有源层，其中0 / = 1的范围，由相对侧的n型包覆层和p型覆层形成，1.3y-3.9x> / = 1，x> / = 0和y <1。

89. 发明授权

US5412223A Semiconductor device exploiting a quantum interference effect 失效
标题翻译：利用量子干涉效应的半导体器件
公开(公告)号：US5412223A
公开(公告)日：1995-05-02
申请号：US149954
申请日：1993-11-10
申请人： Akira Ishibashi , Masamichi Ogawa
发明人： Akira Ishibashi , Masamichi Ogawa
IPC分类号： H01L29/06 , H01L29/66 , H01L29/68 , H01L29/80 , H01L29/161
CPC分类号： B82Y10/00 , H01L29/66977
摘要： A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a rod-shaped semiconductor portion extending in one direction; a prism-shaped semiconductor portion covering side faces of the rod-shaped semiconductor portion and extending in the one direction; and one or more source electrodes and one or more drain electrodes electrically connected to opposite ends of the prism-shaped semiconductor portion. Channels extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof. Alternatively, the prism-shaped semiconductor portion has a twisted structure about an axis extending in the one direction, and channels each having a twisted structure extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof.
摘要翻译：公开了一种利用量子干涉效应的半导体器件。该装置包括：沿一个方向延伸的杆状半导体部分; 棱柱形半导体部分，其覆盖所述棒状半导体部分的侧面并沿所述一个方向延伸; 以及一个或多个源电极和一个或多个漏电极，电连接到棱柱形半导体部分的相对端。通道沿棱镜状半导体部分的一个方向沿其侧面的多个侧面延伸。或者，棱镜状半导体部分具有围绕在一个方向上延伸的轴线的扭曲结构，并且每个具有扭曲结构的通道沿棱镜形半导体部分的侧面的多个侧面在一个方向上延伸。

90. 发明授权

US5306890A Method of producing corrugated metal sheeting and method of producing honeycomb structure therefrom for carrying catalytic agents used for purifying exhaust gases 失效
标题翻译：生产波纹金属片的方法及其生产蜂窝结构的方法，用于承载用于净化废气的催化剂
公开(公告)号：US5306890A
公开(公告)日：1994-04-26
申请号：US710462
申请日：1991-06-05
申请人： Katsuhiro Minamida , Motoi Kido , Atsushi Sugihashi , Masahi Oikawa , Naoya Hamada , Akira Ishibashi
发明人： Katsuhiro Minamida , Motoi Kido , Atsushi Sugihashi , Masahi Oikawa , Naoya Hamada , Akira Ishibashi
IPC分类号： B21D47/00 , B23K26/08 , F01N3/28 , B23K26/00
CPC分类号： B21D47/00 , B23K26/0846 , F01N3/281 , F01N2330/04 , F01N2330/32
摘要： A method of producing a corrugated metal sheeting including a flat metal sheet and a corrugated metal sheet joined to each other, which sheeting is used to produce a carrier or honeycomb structure for carrying catalytic agents used for purifying exhaust gases from, for example, an internal combustion engine of an automobile. In the method, the flat and corrugated metal sheets are brought together so that corrugations of the corrugated metal sheet are successively brought into contact with the flat metal sheet in such a manner that the corrugated metal sheet is freely movable to thereby release resilient stresses therefrom, and a laser beam is incident on a contact line between the flat metal sheet and each of the corrugations of the corrugated metal sheet, to thereby weld them to each other.
摘要翻译：一种生产包括彼此接合的扁平金属片和波纹金属片的波纹金属片的方法，该片用于制造用于承载用于净化例如内部的废气的催化剂的载体或蜂窝结构汽车内燃机在该方法中，将波形金属板和平坦的波纹状金属板接合在一起，使得波纹状金属板的波纹以与波纹状金属板相接触的方式与波纹状金属板自由移动，从而释放弹性应力，并且激光束入射在平坦金属片与波纹状金属片的每个波纹之间的接触线上，从而将它们彼此焊接。

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