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    • 86. 发明授权
    • Thin film transistor and fabrication method thereof
    • 薄膜晶体管及其制造方法
    • US07388265B2
    • 2008-06-17
    • US11598844
    • 2006-11-13
    • Shih-Chang ChangDe-Hua DengChun-Hsiang FangYaw-Ming Tsai
    • Shih-Chang ChangDe-Hua DengChun-Hsiang FangYaw-Ming Tsai
    • H01L29/76
    • H01L27/1214H01L27/127H01L29/42384H01L29/66757H01L29/78621H01L29/78645
    • A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
    • 具有自对准轻掺杂区域的薄膜晶体管(TFT)及其制造方法。 有源层具有沟道区,第一掺杂区和第二掺杂区,其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域,屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间,中心区域覆盖沟道区域,屏蔽区域覆盖第一掺杂区域,延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层,覆盖中心区域并使屏蔽区域和延伸区域露出。
    • 89. 发明授权
    • TFT structure and method for manufacturing the same
    • TFT结构及其制造方法
    • US07170146B2
    • 2007-01-30
    • US10834337
    • 2004-04-28
    • Shih-Chang ChangDe-Hua DengYaw-Ming Tsai
    • Shih-Chang ChangDe-Hua DengYaw-Ming Tsai
    • H01L23/58
    • H01L29/78696H01L29/42384H01L29/78621H01L29/78645
    • A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.
    • 薄膜晶体管(TFT)结构包括基板,包括多个沟道区的多晶硅结构,至少一个轻掺杂区和至少一个重掺杂源极/漏极区,多个栅极结构和形成的绝缘层 在栅极结构和多晶硅结构之间。 栅极结构之下和之间的绝缘层的第一部分的厚度大于与第一部分相邻的绝缘层的第二部分的厚度。 至少一个轻掺杂区域形成在绝缘层的第一部分之下,并且通过相同的掺杂程序在绝缘层的第二部分下形成至少一个重掺杂的源极/漏极区域。