专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07070657B1 Method and apparatus for depositing antireflective coating 失效
标题翻译：用于沉积抗反射涂层的方法和装置
公开(公告)号：US07070657B1
公开(公告)日：2006-07-04
申请号：US09418818
申请日：1999-10-15
申请人： David Cheung , Joe Feng , Judy H. Huang , Wai-Fan Yau
发明人： David Cheung , Joe Feng , Judy H. Huang , Wai-Fan Yau
IPC分类号： C23C16/52 , C23F1/00 , H01L21/306
CPC分类号： G03F7/091
摘要： This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.
摘要翻译：本发明提供一种用于沉积抗反射层的稳定方法。氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。氦也用于稳定工艺，使得可以沉积不同的膜。本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

82. 发明申请

US20060127495A1 Method to treat collagenous connective tissue for implant remodeled by host cells into living tissue 有权
标题翻译：治疗由宿主细胞重建为生物体组织的植入物的胶原结缔组织的方法
公开(公告)号：US20060127495A1
公开(公告)日：2006-06-15
申请号：US11345769
申请日：2006-01-19
申请人： David Cheung
发明人： David Cheung
IPC分类号： A61K35/34
CPC分类号： A01N1/02 , A01N1/0226 , A61K38/39 , A61L27/3604 , A61L27/3687
摘要： The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor, the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution. Following the removal of the residue, the tissue is soaked at a predetermined temperature in a third solution of an anti-inflammatory agent, an anti-thrombic agent, alcohol, and water or sequentially in an anti-inflammatory agent, alcohol, and water solution, and then in an anti-thrombic agent, alcohol and water solution and thereafter stored.
摘要翻译：本发明涉及一种治疗从供体移出的胶原结缔组织的方法，用于植入到受体中，其被宿主细胞重新吸收或重新定植而没有免疫排斥和炎症反应。从供体中取出后，对组织进行修整，然后将其浸泡在温度范围为4至10摄氏度的冷稳定溶液中。然后将组织在预定温度下浸入预定量和浓度的聚二醇，盐，过氧化氢和磷酸盐缓冲液第一溶液中并具有足够的离子强度，以使研磨物质解离，使得胶原纤维保持稳定。然后将组织在预定温度下在醇和水溶液中浸泡足够的时间以除去第一溶液的残余物。除去残留物后，将组织在预定温度下在抗炎剂，抗血栓剂，酒精和水的第三溶液中浸泡，或依次在抗炎剂，酒精和水溶液中浸泡，然后在抗血栓剂，酒精和水溶液中储存。

83. 发明授权

US06743737B2 Method of improving moisture resistance of low dielectric constant films 有权
标题翻译：提高低介电常数膜耐湿性的方法
公开(公告)号：US06743737B2
公开(公告)日：2004-06-01
申请号：US10226717
申请日：2002-08-22
申请人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
发明人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02211 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3125 , H01L21/31633 , H01L21/76807
摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
摘要翻译：用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。氧化硅系膜的耐湿性提高。

84. 发明授权

US06689930B1 Method and apparatus for cleaning an exhaust line in a semiconductor processing system 有权
标题翻译：用于清洁半导体处理系统中的排气管线的方法和装置
公开(公告)号：US06689930B1
公开(公告)日：2004-02-10
申请号：US09608577
申请日：2000-06-30
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

85. 发明授权

US06511909B1 Method of depositing a low K dielectric with organo silane 失效
标题翻译：用有机硅沉积低K电介质的方法
公开(公告)号：US06511909B1
公开(公告)日：2003-01-28
申请号：US09370371
申请日：1999-08-09
申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu
IPC分类号： H01L214763
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
摘要翻译：一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

86. 发明授权

US06358573B1 Mixed frequency CVD process 有权
标题翻译：混合频率CVD工艺
公开(公告)号：US06358573B1
公开(公告)日：2002-03-19
申请号：US09585258
申请日：2000-06-02
申请人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

87. 发明授权

US06287990B1 CVD plasma assisted low dielectric constant films 有权
标题翻译： CVD等离子体辅助低介电常数膜
公开(公告)号：US06287990B1
公开(公告)日：2001-09-11
申请号：US09162915
申请日：1998-09-29
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： C23C16505
CPC分类号： H01L21/76832 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

88. 发明授权

US06245690B1 Method of improving moisture resistance of low dielectric constant films 有权
标题翻译：提高低介电常数膜耐湿性的方法
公开(公告)号：US06245690B1
公开(公告)日：2001-06-12
申请号：US09187460
申请日：1998-11-04
申请人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
发明人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
IPC分类号： C23C1640
CPC分类号： H01L21/02211 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3125 , H01L21/31633 , H01L21/76807
摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
摘要翻译：用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。氧化硅系膜的耐湿性提高。

89. 发明授权

US06209484B1 Method and apparatus for depositing an etch stop layer 有权
标题翻译：沉积蚀刻停止层的方法和装置
公开(公告)号：US06209484B1
公开(公告)日：2001-04-03
申请号：US09551021
申请日：2000-04-17
申请人： Judy H. Huang , Wai-Fan Yau , David Cheung , Chan-Lon Yang
发明人： Judy H. Huang , Wai-Fan Yau , David Cheung , Chan-Lon Yang
IPC分类号： C23C1600
CPC分类号： C23C16/308 , C23C16/345 , C23C16/52 , G03F7/091 , H01L21/0276 , H01L21/31116 , H01L21/76802 , H01L21/76829
摘要： A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.
摘要翻译：一种沉积蚀刻停止层的方法和装置。该方法开始于将工艺气体引入其中设置衬底的处理室中。然后在衬底上沉积蚀刻停止层。然后将上覆层沉积在蚀刻停止层上。蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

90. 发明授权

US06194628B1 Method and apparatus for cleaning a vacuum line in a CVD system 失效
标题翻译：用于在CVD系统中清洁真空管线的方法和装置
公开(公告)号：US06194628B1
公开(公告)日：2001-02-27
申请号：US08533174
申请日：1995-09-25
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从该装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式