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81. 发明授权

US5178370A Conductivity modulated insulated gate semiconductor device 失效
标题翻译：电导率调制绝缘栅半导体器件
公开(公告)号：US5178370A
公开(公告)日：1993-01-12
申请号：US740267
申请日：1991-08-05
申请人： Lowell E. Clark , Robert B. Davies
发明人： Lowell E. Clark , Robert B. Davies
IPC分类号： H01L21/331 , H01L29/08 , H01L29/739
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/6634 , H01L29/7395 , H01L29/7396
摘要： A vertical conducting insulating gate bipolar transistor having an emitter region formed in a base region wherein the base region is not shorted to the emitter is provided. The emitter and base regions are formed in an upper portion of a lightly doped semiconductor drift region and an anode region is formed in a bottom portion of the drift region. During forward conduction, minority carriers are injected from the anode into the base region, biasing the base region sufficiently to inject minority carriers into the upper surface of the drift region. The injected minority carriers improve conductivity in the upper portion of the drift region.
摘要翻译：提供了一种垂直导电绝缘栅双极晶体管，其具有形成在基极区域中的发射极区域，其中基极区域未与发射极短路。发射极和基极区形成在轻掺杂半导体漂移区的上部，阳极区形成在漂移区的底部。在正向传导期间，少数载流子从阳极注入基极区域，充分偏置基极区域以将少数载流子注入漂移区域的上表面。注入的少数载流子改善漂移区上部的导电性。

82. 发明授权

US5155563A Semiconductor device having low source inductance 失效
标题翻译：具有低源电感的半导体器件
公开(公告)号：US5155563A
公开(公告)日：1992-10-13
申请号：US670654
申请日：1991-03-18
申请人： Robert B. Davies , Robert J. Johnsen , Francine Y. Robb
发明人： Robert B. Davies , Robert J. Johnsen , Francine Y. Robb
IPC分类号： H01L29/78 , H01L21/74 , H01L29/10 , H01L29/417
CPC分类号： H01L29/4175 , H01L21/743 , H01L29/1087 , H01L29/7835
摘要： A semiconductor device having a low source inductance are fabricated by having a maximum of two sources each in contact with a region which makes contact to a substrate or back side of the device. The back side source contact also allows the device to be mounted directly to a grounded heatsink.
摘要翻译：具有低源电感的半导体器件通过具有最多两个源来制造，每个源与与器件的衬底或背面接触的区域接触。背面源触点也允许器件直接安装在接地散热器上。

83. 发明授权

US5008736A Thermal protection method for a power device 失效
标题翻译：电力设备的热保护方法
公开(公告)号：US5008736A
公开(公告)日：1991-04-16
申请号：US438382
申请日：1989-11-20
申请人： Robert B. Davies , Robert B. Jarrett
发明人： Robert B. Davies , Robert B. Jarrett
IPC分类号： H01L29/78 , H02H5/04
CPC分类号： H02H5/044 , H01L2224/4847 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/13034 , H01L2924/1305 , H01L2924/13091 , H01L2924/3011
摘要： A thermally protected power transistor comprising a first chip which includes a power transistor and a second chip which includes protection circuitry. The second chip has a plurality of metallic bumps formed thereon which are coupled to various portions of the protection circuitry, wherein at least one metallic bump serves as a thermal couple. The protection circuitry chip is mounted upside down on the power transistor chip and coupled to the power transistor chip by the metallic bumps. The metallic bumps serve to provide electrical power for the protection circuitry, to couple control signals between the protection circuitry and the power transistor, and to couple thermal information from the power transistor to the protection circuitry.

84. 发明授权

US4967336A High voltage bridge interface 失效
标题翻译：高压桥接口
公开(公告)号：US4967336A
公开(公告)日：1990-10-30
申请号：US484946
申请日：1990-02-26
申请人： Robert B. Davies , Warren J. Schultz , James J. Stipanuk
发明人： Robert B. Davies , Warren J. Schultz , James J. Stipanuk
IPC分类号： H02P27/06 , H02M7/5387 , H03K17/0412
CPC分类号： H02M7/5387 , H03K17/04123
摘要： A high voltage bridge interface circuit is provided for AC and brushless DC motor control having a high voltage isolation circuit and drive circuits which simplify the high voltage interface and reduce the total system integration effort. The isolation circuit provides the high voltage unilateral isolation between the control circuit and the high voltage power supply conductors, while the drive circuits improve the noise immunity at the gate termimals of the power MOSFET bridge. The high voltage bridge interface circuit is partitioned by providing the high voltage interface within one IC thereby permitting the integration of the discrete components of the power MOSFET drive circuits and simplifying the overall system integration.

85. 发明授权

US4554464A Propagation delay generator 失效
标题翻译：传播延迟发生器
公开(公告)号：US4554464A
公开(公告)日：1985-11-19
申请号：US413051
申请日：1982-08-30
申请人： Robert B. Davies , Ira Miller , Robert N. Dotson
发明人： Robert B. Davies , Ira Miller , Robert N. Dotson
IPC分类号： H03K5/13 , H03K17/28 , H03K3/017 , H03K5/04 , H03K17/56
CPC分类号： H03K17/28 , H03K5/13
摘要： A propagation delay generator is provided for controlling the duration of a bubble generate waveform of a bubble memory system. A first means is responsive to a digital input signal and provides an initializing signal to a current source. A capacitor is charged, responsive to an R-C time constant, by an increased voltage level prompted by the initializing signal. A second means is responsive to the charging signal in excess of that required to charge the capacitor. The second means thereby provides a digital output that is delayed from the digital input signal.
摘要翻译：提供传播延迟发生器用于控制气泡存储系统的气泡产生波形的持续时间。第一装置响应于数字输入信号并且向当前源提供初始化信号。响应于R-C时间常数，电容器被由初始化信号提示的增加的电压电平充电。第二装置响应于超过对电容器充电所需的充电信号。因此，第二装置提供从数字输入信号延迟的数字输出。

86. 发明授权

US4514648A Current sense circuit for a bubble memory voltage booster 失效
标题翻译：用于气泡存储器电压增强器的电流检测电路
公开(公告)号：US4514648A
公开(公告)日：1985-04-30
申请号：US412057
申请日：1982-08-27
申请人： Robert N. Dotson , Robert B. Davies , Ira Miller
发明人： Robert N. Dotson , Robert B. Davies , Ira Miller
IPC分类号： H03K17/082 , H03K17/64 , H03K5/153 , H03K5/24 , H03K17/08
CPC分类号： H03K17/0826 , H03K17/64
摘要： In a voltage boost circuit for use in conjunction with a bubble memory operational driver, an output transistor is alternately turned on and off. When turned on, current flows through an inductor. When turned off, a high voltage is built up across the inductor which causes charge to be transferred to and stored in a capacitor. When the output transistor is turned on so as to permit current to flow through the inductor, a .DELTA.V.sub.BE /R current representative of the current flowing through the output transistor is compared with a .DELTA.V.sub.BE /R reference current. When the first current reaches and exceeds the reference current, the output transistor is turned off.
摘要翻译：在与气泡存储器操作驱动器一起使用的升压电路中，输出晶体管交替地导通和截止。导通时，电流流经电感。当关闭时，在电感器上建立高电压，这将导致电荷被转移并存储在电容器中。当输出晶体管导通以允许电流流过电感器时，将代表流过输出晶体管的电流的DELTA VBE / R电流与DELTA VBE / R参考电流进行比较。当第一电流达到并超过参考电流时，输出晶体管截止。

87. 发明授权

US4504928A Current ramp generator 失效
标题翻译：电流斜坡发生器
公开(公告)号：US4504928A
公开(公告)日：1985-03-12
申请号：US413050
申请日：1982-08-30
申请人： Robert B. Davies , Ira Miller , Robert N. Dotson
发明人： Robert B. Davies , Ira Miller , Robert N. Dotson
IPC分类号： G11C19/08 , H03K4/08
CPC分类号： G11C19/0858
摘要： A current ramp generator is provided for controlling the fall time of a bubble generate waveform of a bubble memory system. Gate circuitry is responsive to a digital input signal and provides an initializing signal to a current source. The current source charges a capacitor and thereby provides an increasing signal to a current mirror whose output sinks current from a control amplifier of the bubble memory system.
摘要翻译：提供电流斜坡发生器用于控制气泡存储系统的气泡产生波形的下降时间。门电路响应于数字输入信号并向电流源提供初始化信号。电流源对电容器充电，从而向电流镜提供增加的信号，电流镜的输出从气泡存储器系统的控制放大器吸收电流。

88. 发明授权

US4306246A Method for trimming active semiconductor devices 失效
标题翻译：用于修整有源半导体器件的方法
公开(公告)号：US4306246A
公开(公告)日：1981-12-15
申请号：US163038
申请日：1980-06-26
申请人： Robert B. Davies , Robert L. Vyne
发明人： Robert B. Davies , Robert L. Vyne
IPC分类号： H01L23/525 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/808 , H03F1/30 , H01L29/72 , H01L23/48 , H01L29/44
CPC分类号： H01L29/0813 , H01L23/525 , H01L29/0843 , H01L29/0847 , H01L29/1058 , H01L29/41708 , H01L29/41725 , H01L29/808 , H03F1/302 , H01L2924/0002 , H01L2924/3011
摘要： A method for achieving active devices with closely matched characteristics for use in high performance monolithic integrated circuits. The method comprises providing active devices with appropriately segmented junction regions connected in parallel by their metallic links and severing one or more of the links in order to achieve matching of both the static and dynamic characteristics of two or more active devices.
摘要翻译：一种用于实现具有紧密匹配特性的有源器件用于高性能单片集成电路的方法。该方法包括通过它们的金属链路提供主动装置并联连接并切断一个或多个链路的有源装置，以实现两个或多个有源装置的静态和动态特性的匹配。

89. 发明授权

US4227157A Frequency compensated high frequency amplifiers 失效
标题翻译：频率补偿高频放大器
公开(公告)号：US4227157A
公开(公告)日：1980-10-07
申请号：US001088
申请日：1979-01-05
申请人： Robert B. Davies , Don W. Zobel
发明人： Robert B. Davies , Don W. Zobel
IPC分类号： H03F1/08 , H03F3/30 , H03F3/213
CPC分类号： H03F3/3071 , H03F1/083
摘要： The disclosed amplifier includes first and second gain stages and first and second frequency compensating capacitors. The second gain stage has a first high impedance node coupled to the first gain stage, a second high impedance node, a first circuit coupled between the first and second high impedance nodes, a third high impedance node, and a second circuit coupled between the second and third high impedance nodes. The impedances at the first, second and third high impedance nodes are a function of frequency and the impedance at the second high impedance node is lower at any given frequency than the impedances at the first and third high impedance nodes. The first frequency compensating capacitor is coupled between the first and third nodes and the second frequency compensating capacitor is coupled between the third and second nodes.
摘要翻译：所公开的放大器包括第一和第二增益级以及第一和第二频率补偿电容器。第二增益级具有耦合到第一增益级的第一高阻抗节点，第二高阻抗节点，耦合在第一和第二高阻抗节点之间的第一电路，第三高阻抗节点和耦合在第二高阻抗节点之间的第二电路和第三高阻抗节点。第一，第二和第三高阻抗节点处的阻抗是频率的函数，并且第二高阻抗节点处的阻抗在任何给定频率下比在第一和第三高阻抗节点处的阻抗更低。第一频率补偿电容器耦合在第一和第三节点之间，第二频率补偿电容器耦合在第三和第二节点之间。

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