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    • 86. 发明申请
    • COMPRESSING IMAGE DATA
    • 压缩图像数据
    • WO2012174636A1
    • 2012-12-27
    • PCT/CA2011/050384
    • 2011-06-22
    • RESEARCH IN MOTION LIMITEDHE, DakeYU, XiangWANG, Jing
    • HE, DakeYU, XiangWANG, Jing
    • G06T9/00H04N7/50
    • H04N19/48H04N19/105H04N19/176H04N19/463H04N19/50
    • Methods, systems, and computer programs for encoding and decoding image are described. In some aspects, an input data block and a prediction data block are accessed. A projection factor is generated based on a projection of the input data block onto the prediction data block. A scaled prediction data block is generated by multiplying the projection factor by the prediction data block. A residual data block is generated based on a difference between the input data block and the scaled prediction data block. In some aspects, a prediction data block, a residual data block, and a projection factor associated with the residual data block are accessed. A scaled prediction data block is generated by multiplying the projection factor by the prediction data block. An output data block is generated by summing the residual data block and the scaled prediction data block.
    • 描述用于编码和解码图像的方法,系统和计算机程序。 在一些方面,访问输入数据块和预测数据块。 基于将输入数据块投影到预测数据块上而产生投影因子。 通过将投影因子乘以预测数据块来生成缩放预测数据块。 基于输入数据块和缩放预测数据块之间的差异生成残留数据块。 在一些方面,访问与残留数据块相关联的预测数据块,残差数据块和投影因子。 通过将投影因子乘以预测数据块来生成缩放预测数据块。 通过对残差数据块和缩放预测数据块求和来生成输出数据块。
    • 90. 发明申请
    • STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
    • 应变导电绝缘体结构及其形成方法
    • WO2012119418A1
    • 2012-09-13
    • PCT/CN2011/078946
    • 2011-08-25
    • TSINGHUA UNIVERSITYWANG, JingXU, JunGUO, Lei
    • WANG, JingXU, JunGUO, Lei
    • H01L21/336H01L21/20
    • H01L21/76283H01L21/76251H01L29/7843H01L29/7846H01L29/7848H01L29/78684
    • A strained Ge-on-insulator structure is provided, comprising: a silicon substrate (1100), in which an oxide insulating layer (1200) is formed on a surface of the silicon substrate (1100); a Ge layer (1300) formed on the oxide insulating layer (1200), in which a first passivation layer (1400) is formed between the Ge layer (1300) and the oxide insulating layer (1200); a gate stack (1600, 1700) formed on the Ge layer (1300), a channel region formed below the gate stack (1600, 1700), and a source (1800) and a drain (1800) formed on sides of the channel region; and a plurality of shallow trench isolation structures (1900) extending into the silicon substrate (1100) and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
    • 提供了一种应变绝缘体上的结构,包括:在硅衬底(1100)的表面上形成氧化物绝缘层(1200)的硅衬底(1100); 形成在氧化物绝缘层(1200)上的Ge层(1300),其中在Ge层(1300)和氧化物绝缘层(1200)之间形成第一钝化层(1400); 形成在Ge层(1300)上的栅极堆叠(1600,1700),形成在栅极叠层(1600,1700)下方的沟道区域,以及形成在沟道区域侧面上的源极(1800)和漏极(1800) ; 以及多个浅沟槽隔离结构(1900),其延伸到硅衬底(1100)中并且填充有绝缘介电材料以在沟道区域中产生应变。 此外,还提供了用于形成应变的绝缘体上Ge的结构的方法。