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81. 发明授权

US08791567B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08791567B2
公开(公告)日：2014-07-29
申请号：US13494537
申请日：2012-06-12
申请人： Nobuaki Takahashi , Masahiro Komuro , Satoshi Matsui
发明人： Nobuaki Takahashi , Masahiro Komuro , Satoshi Matsui
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/11 , H01L24/13 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/05684 , H01L2224/13009 , H01L2224/131 , H01L2224/13562 , H01L2224/1357 , H01L2224/13644 , H01L2224/13664 , H01L2224/17181 , H01L2924/00014
摘要： In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r3 from the circumference of the opening pattern to the central axis of the through-hole is smaller than the distance r1 in the through-hole. By providing the opening pattern, the conductive pattern is exposed at the bottom surface of the through-hole. The bump is located on the back surface side of the substrate, and is formed integrally with the through-electrode.
摘要翻译：在该半导体装置中，通孔形成在基板上，位于导电图案的下方。绝缘层位于通孔的底面。导电图案位于基板的一个表面侧。开口图案形成在位于通孔和导电图案之间的绝缘层中，其中从开口图案的周边到通孔的中心轴线的距离r3小于通孔中的距离r1 通孔。通过设置开口图案，导电图案在通孔的底面露出。凸块位于基板的背面侧，与贯通电极一体形成。

82. 发明申请

US20120252147A1 METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENT 有权
标题翻译：制造有机电致发光元件的方法
公开(公告)号：US20120252147A1
公开(公告)日：2012-10-04
申请号：US13514763
申请日：2010-10-01
申请人： Nobuaki Takahashi , Shigetoshi Kawabe , Natsuki Yamamoto
发明人： Nobuaki Takahashi , Shigetoshi Kawabe , Natsuki Yamamoto
IPC分类号： H01L51/56
CPC分类号： H01L51/56 , H01L2251/566
摘要： A method of manufacturing an organic electroluminescence element having on a belt-formed flexible base material, a first electrode, at least one organic functional layer, and a second electrode, includes continuously forming at least one organic functional layer by coating the same on a first electrode which is formed continuously on the flexible base material in the conveying direction thereof, further forming a second electrode on the organic functional layer, so as to make a plurality of organic electroluminescence element structures in the conveying direction, and then cutting the electroluminescence element structures into individual organic electroluminescence elements so as to manufacture organic electroluminescence elements.
摘要翻译：一种制造具有带状柔性基材，第一电极，至少一个有机功能层和第二电极的有机电致发光元件的方法包括：通过在至少一个有机功能层上涂覆第一电极，其在所述柔性基材的输送方向上连续地形成，在所述有机功能层上形成第二电极，以在输送方向上形成多个有机电致发光元件结构体，然后切割所述电致发光元件结构体成为有机电致发光元件，制造有机电致发光元件。

83. 发明授权

US08143716B2 Semiconductor device with plate-shaped component 有权
标题翻译：具有板状部件的半导体器件
公开(公告)号：US08143716B2
公开(公告)日：2012-03-27
申请号：US11088836
申请日：2005-03-25
申请人： Masaya Kawano , Nobuaki Takahashi
发明人： Masaya Kawano , Nobuaki Takahashi
IPC分类号： H01L23/04 , H01L23/02
CPC分类号： H01L25/0657 , H01L23/49816 , H01L24/28 , H01L24/83 , H01L2224/05571 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/73215 , H01L2224/73253 , H01L2224/73265 , H01L2224/838 , H01L2225/0651 , H01L2225/06517 , H01L2225/06572 , H01L2225/06582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/30105 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： The invention provides a semiconductor device including a plurality of stacked semiconductor chips, which offers a higher degree of freedom in selecting a chip size of the semiconductor chip and arranging the routing, and increase of the reliability and speed in signal transmission between the semiconductor chips. The semiconductor device includes a lower semiconductor chip, an upper semiconductor chip and a silicon spacer formed between the lower semiconductor chip and the upper semiconductor chip and including a projecting portion projecting farther outward than an outer periphery of the upper semiconductor chip, and the silicon spacer includes through electrodes and reroutings.
摘要翻译：本发明提供一种半导体器件，其包括多个层叠的半导体芯片，其在选择半导体芯片的芯片尺寸并布置布线时提供更高的自由度，并且增加半导体芯片之间的信号传输中的可靠性和速度。半导体器件包括下半导体芯片，上半导体芯片和形成在下半导体芯片和上半导体芯片之间的硅间隔物，并且包括比上半导体芯片的外周更向外突出的突出部分，并且硅间隔物包括通过电极和重新排列。

84. 发明申请

US20120069114A1 IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD 审中-公开
标题翻译：图像形成装置和图像形成方法
公开(公告)号：US20120069114A1
公开(公告)日：2012-03-22
申请号：US13232756
申请日：2011-09-14
申请人： Yoshiaki Kaneko , Hirofumi Kondo , Satoshi Kaiho , Kazuhiro Hara , Masahiro Doi , Yasushi Kuribayashi , Nobuaki Takahashi
发明人： Yoshiaki Kaneko , Hirofumi Kondo , Satoshi Kaiho , Kazuhiro Hara , Masahiro Doi , Yasushi Kuribayashi , Nobuaki Takahashi
IPC分类号： B41J2/01 , B65H3/14 , B65H5/34 , B65H7/12 , B65H5/26 , B65H3/18 , B65H3/52
CPC分类号： B41J3/60 , B41J13/223 , B41J13/226 , B41J2025/008 , B65H5/12 , B65H2301/44331 , B65H2511/40 , B65H2511/414 , B65H2701/1311 , B65H2701/1313 , B65H2220/01 , B65H2220/02
摘要： According to one embodiment, an image forming apparatus includes a retaining roller, a nipping device, a retaining device, an image forming head, and a controller. The retaining roller retains a recording medium and rotates. The nipping device is capable of operating to open and close and holds the recording medium between the nipping device and the surface of the retaining roller to mechanically retain the recording medium. The retaining device retains the recording medium on the surface of the retaining roller. The controller controls, on the basis of a condition for use of the recording medium, the nipping device to nip the recording medium between the nipping device and the surface of the retaining roller.
摘要翻译：根据一个实施例，图像形成装置包括保持辊，夹持装置，保持装置，成像头和控制器。保持辊保持记录介质并旋转。夹持装置能够操作以打开和关闭并将记录介质保持在夹持装置和保持辊的表面之间以机械地保持记录介质。保持装置将记录介质保持在保持辊的表面上。控制器基于使用记录介质的条件控制夹持装置将记录介质夹在夹持装置和保持辊的表面之间。

85. 发明申请

US20110316913A1 IMAGE FORMING APPARATUS 审中-公开
标题翻译：图像形成装置
公开(公告)号：US20110316913A1
公开(公告)日：2011-12-29
申请号：US13166864
申请日：2011-06-23
申请人： Satoshi Kaiho , Nobuaki Takahashi
发明人： Satoshi Kaiho , Nobuaki Takahashi
IPC分类号： B41J2/01 , B41J29/38
CPC分类号： B41J29/38
摘要： According to one embodiment, an image forming apparatus includes a support table, a printing head, and a cleaner. The support table rotates around an axis. The printing head faces the support table. The cleaner includes a web coming into contact with the support table.
摘要翻译：根据一个实施例，图像形成装置包括支撑台，打印头和清洁器。支撑台绕轴旋转。打印头面向支撑台。清洁器包括与支撑台接触的网。

86. 发明申请

US20110304029A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, WIRING BOARD AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR PACKAGE, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：半导体器件及其制造方法，接线板及其制造方法，半导体封装和电子设备
公开(公告)号：US20110304029A1
公开(公告)日：2011-12-15
申请号：US13216118
申请日：2011-08-23
申请人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
IPC分类号： H01L23/58
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/132 , H01L2224/133 , H01L2224/1358 , H01L2224/136 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H05K1/0271 , H05K3/244 , H05K3/3436 , H05K2201/0212 , Y02P70/613 , H01L2924/01015 , H01L2924/00 , H01L2224/11
摘要： A terminal pad is formed on an active surface of an LSI chip, and a composite barrier metal layer is provided over this terminal pad. In the composite barrier metal layer, a plurality of low-elasticity particles composed of a silicone resin is dispersed throughout a metal base phase composed of NiP. The composite barrier metal layer has a thickness of, e.g., 3 μm, and the low-elasticity particles have a diameter of, e.g., 1 μm. A semiconductor device is mounted on a wiring board by bonding a solder bump to the composite barrier metal layer. The low-elasticity particles are thereby allowed to deform according to the applied stress when the semiconductor device is bonded to the wiring board via the solder bump, whereby the stress can be absorbed.
摘要翻译：在LSI芯片的有源面上形成端子焊盘，在该端子焊盘上设置复合阻挡金属层。在复合阻挡金属层中，将由硅树脂构成的多个低弹性粒子分散在由NiP构成的金属基体相中。复合阻挡金属层的厚度例如为3μm，低弹性颗粒的直径例如为1μm。通过将焊料凸块粘合到复合阻挡金属层上，将半导体器件安装在布线板上。因此，当半导体器件通过焊料凸块接合到布线板时，低弹性粒子根据施加的应力而变形，从而能够吸收应力。

87. 发明申请

US20110199447A1 IMAGE FORMING APPARATUS AND DRYING METHOD USED IN IMAGE FORMING APPARATUS 审中-公开
标题翻译：在图像形成装置中使用的图像形成装置和干燥方法
公开(公告)号：US20110199447A1
公开(公告)日：2011-08-18
申请号：US13024488
申请日：2011-02-10
申请人： Nobuaki Takahashi , Satoshi Kinouchi , Satoshi Kaiho
发明人： Nobuaki Takahashi , Satoshi Kinouchi , Satoshi Kaiho
IPC分类号： B41J2/01
CPC分类号： B41J11/0015
摘要： According to one embodiment, an image forming apparatus has an image forming unit, a heat pump, and a blow-out port. The image forming unit forms an image on a medium. The heat pump generates air of a decreased low humidity. The low-humidity air generated by the heat pump is blown from the blow-out port to the medium on which the image is formed by the image forming unit.
摘要翻译：根据一个实施例，图像形成装置具有图像形成单元，热泵和吹出口。图像形成单元在介质上形成图像。热泵产生低湿度的空气。由热泵产生的低湿空气从吹出口吹送到由图像形成单元形成图像的介质。

88. 发明授权

US07770428B2 Hot bend pipe and a process for its manufacture 有权
标题翻译：热弯管及其制造工艺
公开(公告)号：US07770428B2
公开(公告)日：2010-08-10
申请号：US12318882
申请日：2009-01-12
申请人： Nobuaki Takahashi , Akio Yamamoto , Masahiko Hamada
发明人： Nobuaki Takahashi , Akio Yamamoto , Masahiko Hamada
IPC分类号： B21D9/00
CPC分类号： B21C37/08 , B23K33/006 , B23K2101/06 , B23K2103/04 , C21D9/08 , C21D9/50 , C22C38/02 , C22C38/04 , C22C38/06
摘要： A high-strength hot bend pipe which has a balance between an excellent strength of at least X70 grade and toughness and which has excellent tensile properties and a weld metal with excellent low temperature toughness is manufactured. A UOE steel pipe having a base metal with a composition of C: 0.03-0.12%, Si: 0.05-0.50%, Mn: 1.4-2.2%, S: at most 0.01%, Al: at most 0.06%, N: at most 0.008%, and a remainder of Fe and impurities, with the carbon equivalent (Ceq) being at most 0.36% and the weld cracking parameter (Pcm) being at most 0.22%, and having a weld metal with a weld cracking parameter (Pcm) of at most 0.28%, a B content of at most 5 ppm, and an O content of at most 280 ppm is heated to a temperature range of 900-1100° C. and subjected to bending, and then is immediately cooled to a temperature range of 300° C. or lower at a cooling rate of at least 3° C./sec, and then is tempered in a temperature range of 300-500° C.
摘要翻译：制造具有至少X70等级的优异强度和具有优异的拉伸性能的优异强度与具有优异的低温韧性的焊接金属之间的平衡的高强度热弯管。具有组成为C：0.03〜0.12％，Si：0.05〜0.50％，Mn：1.4〜2.2％，S：0.01％以下，Al：0.06％以下的贱金属的UOE钢管，N：最多0.008％，余量为Fe和杂质，碳当量（Ceq）最大为0.36％，焊接裂纹参数（Pcm）为0.22％以下，具有焊缝裂纹参数（Pcm ）为0.28％以下，B含量为5ppm以下，O含量为280ppm以下，加热到900〜1100℃的温度范围，进行弯曲，然后立即冷却至温度范围为300℃以下，冷却速度为3℃/秒以上，然后在300-500℃的温度范围内回火。

89. 发明申请

US20090174052A1 ELECTRONIC COMPONENT, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：电子元件，半导体封装和电子器件
公开(公告)号：US20090174052A1
公开(公告)日：2009-07-09
申请号：US12298285
申请日：2007-05-22
申请人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
发明人： Yoshimichi Sogawa , Takao Yamazaki , Nobuaki Takahashi
IPC分类号： H01L23/52
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. An electronic component comprises the electronic component includes an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60 at % of Cu and 40 to 85 at % of Ni.
摘要翻译：在由例如Cu，Ni或NiP制成的常规UBM中，存在如下问题：当电子部件长时间保持在高温条件下时，UBM的阻挡特性丧失，由于在接合界面处形成脆性合金层，强度降低。本发明改善了在高温下储存之后焊料连接部分的长期连接可靠性降低的问题。电子部件包括电子部件，其包括形成在基板或半导体元件上的电极焊盘和形成为覆盖电极焊盘的阻挡金属层，并且阻挡金属层在与所述电极焊盘接触的一侧相反的一侧包括CuNi合金层电极焊盘，含有15〜60at％的Cu和40〜85at％的Ni的CuNi合金层。

90. 发明申请

US20090173715A1 LIGHT SOURCE DEVICE, SUBSTRATE TREATING DEVICE, AND SUBSTRATE TREATING METHOD 审中-公开
标题翻译：光源装置，基板处理装置和基板处理方法
公开(公告)号：US20090173715A1
公开(公告)日：2009-07-09
申请号：US12162617
申请日：2007-01-29
申请人： Yasuhiro Oshima , Nobuaki Takahashi
发明人： Yasuhiro Oshima , Nobuaki Takahashi
IPC分类号： H01L21/306 , C23C14/28
CPC分类号： H01J37/32192 , H01J65/044
摘要： A light source device is formed by a plasma formation chamber including a plasma formation region where plasma is formed by electrodeless discharge to generate light and an optical window defining the lower end of the plasma region in the plasma formation chamber and transmitting the light. A microwave transmitting window is formed in the plasma chamber for introducing microwaves for generating the plasma. Furthermore, outside of the microwave transmitting window, a microwave antenna is connected to the microwave window for introducing the microwaves.
摘要翻译：光源装置由等离子体形成室形成，该等离子体形成室包括等离子体形成区域，其中通过无电极放电形成等离子体以产生光，以及限定等离子体形成室中的等离子体区域的下端并传输光的光学窗口。在等离子体室中形成微波传输窗，用于引入用于产生等离子体的微波。此外，在微波发射窗外，将微波天线连接到微波窗口以引入微波。

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