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81. 发明授权

US07220604B2 Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those 有权
公开(公告)号：US07220604B2
公开(公告)日：2007-05-22
申请号：US11091704
申请日：2005-03-29
申请人： Tohru Satake , Nobuharu Noji , Masahiro Hatakeyama , Kenji Watanabe
发明人： Tohru Satake , Nobuharu Noji , Masahiro Hatakeyama , Kenji Watanabe
IPC分类号： H01L21/00 , G01R31/26
CPC分类号： H01L22/22 , G01R31/307 , H01L21/31116 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of a suitable method, and further provides a method for manufacturing the semiconductor device using those. A method for repairing the pattern shape of a substrate having an imperfect pattern is used, which includes (a) a step for inspecting the substrate and thus detecting the imperfect pattern, and (b) a step for repairing the pattern shape by performing etching or deposition to the detected imperfect-pattern using radiation rays. Moreover, apparatus for repairing a pattern shape of a via-hole in a wafer having an imperfect via-hole is used, which has a defect inspection section for detecting the imperfect via-hole, and an etching section for etching the imperfect via-hole using a fast atom beam.

82. 发明授权

US07176459B2 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US07176459B2
公开(公告)日：2007-02-13
申请号：US10999124
申请日：2004-11-30
申请人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
发明人： Kenji Watanabe , Tohru Satake , Mamoru Nakasuji , Takeshi Murakami , Tsutomu Karimata , Nobuharu Noji , Keiichi Tohyama , Masahiro Hatakeyama
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： H01J37/28 , G01N23/225 , H01J2237/24435
摘要： An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.
摘要翻译：提供一种用于以高通量和高S / N比来评估样品的电子束装置。当从电子枪发射的电子束通过静电透镜，物镜等照射到放置在X-Y-θ台上的样品时，从样品发射二次电子或反射电子。通过控制偏转器，一次电子束入射角约为35°以上的入射角。从样品发射的电子在垂直方向上被引导，并聚焦在检测器上。检测器由MCP，荧光板，中继透镜和TDI（或CCD）组成。来自TDI的电信号被提供给用于图像处理的个人计算机以产生样本的二维图像。

83. 发明授权

US07138629B2 Testing apparatus using charged particles and device manufacturing method using the testing apparatus 有权
标题翻译：使用带电粒子的测试装置和使用该测试装置的装置制造方法
公开(公告)号：US07138629B2
公开(公告)日：2006-11-21
申请号：US10754623
申请日：2004-01-12
申请人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
发明人： Nobuharu Noji , Tohru Satake , Hirosi Sobukawa , Toshifumi Kimba , Masahiro Hatakeyama , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Kenichi Suematsu , Yutaka Tabe , Ryo Tajima , Keiichi Tohyama
IPC分类号： G21K7/00 , G21N23/99 , H01J37/28 , G01N23/225
CPC分类号： H01J37/20 , G01N23/2204 , G01N23/225 , H01J37/05 , H01J37/28 , H01J2237/202 , H01J2237/2441 , H01J2237/2446 , H01J2237/2801 , H01J2237/2817 , H01L21/6833 , H01L2223/54466
摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要翻译：提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。用于检查基板的表面的检查装置产生从电子束源25.1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。产生电子束，使照度不均匀为10％以下。由检测器25.11检测从样品W发射的电子。

84. 发明授权

US07115354B2 Microfabrication of pattern imprinting 失效
标题翻译：图案压印的微加工
公开(公告)号：US07115354B2
公开(公告)日：2006-10-03
申请号：US10699873
申请日：2003-11-04
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Tohru Satake , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/2014
摘要： An optical imprinting apparatus, and a method for producing a two-dimensional pattern, have line widths less than the wavelength of an exposure light. The evanescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises a container in which light is enclosed, an exposure-mask having a proximity field exposure pattern firmly fixed to a section of the container for exposing the exposure pattern on a photo-sensitive material through an evanescent field by the light enclosed therein; and a light source for supplying the light in the container.
摘要翻译：光学压印装置和二维图案的制造方法的线宽小于曝光光的波长。采用ev逝（邻近）场效应实现装置和方法。一种光学压印装置包括一个封闭光的容器，曝光掩模具有牢固地固定在容器的一部分上的接近场曝光图案，用于通过光封闭的曝光场曝光在感光材料上的消光场其中以及用于将光提供到容器中的光源。

85. 发明授权

US06949735B1 Beam source 失效
标题翻译：光源
公开(公告)号：US06949735B1
公开(公告)日：2005-09-27
申请号：US10030087
申请日：2000-07-14
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Tohru Satake
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Kenji Watanabe , Tohru Satake
IPC分类号： G21G4/02 , H01J27/16 , H01J37/08 , H01J37/32 , H05H3/00
CPC分类号： H01J37/32192 , H01J27/16 , H01J37/08 , H01J37/321 , H05H3/00
摘要： An object of the present invention is to provide a beam source capable of efficiently generating a high-density energy beam having good directivity and a relatively large beam diameter. The beam source of the present invention comprises a discharge tube; a gas inlet for introducing gas into the discharge tube; three electrodes mounted in the discharge tube downstream from the gas inlet, wherein the electrode on the upstream end has a plurality of openings through which the gas can pass, the middle electrode is a mesh-shaped electrode, and the electrode on the downstream end is a beam-emitting electrode having a plurality of beam-emitting holes and is disposed in a plane parallel to the middle electrode; plasma-generating means disposed between the two upstream electrodes on the outside of the discharge tube for transforming gas introduced into the discharge tube into plasma; and voltage-applying means for accelerating the beam between the two downstream electrodes and emitting the accelerated beam from the downstream beam-emitting electrode.
摘要翻译：本发明的目的是提供一种能够有效地产生具有良好方向性和较大光束直径的高密度能量束的束源。本发明的光束源包括放电管; 用于将气体引入放电管的气体入口; 三个电极安装在放气管的气体入口下游，其中上游端的电极具有多个开口，气体可以通过该开口，中间电极是网状电极，下游端的电极是具有多个光束发射孔并且布置在与中间电极平行的平面中的光束发射电极; 等离子体产生装置，设置在放电管外侧的两个上游电极之间，用于将引入放电管的气体转化为等离子体; 以及用于加速两个下游电极之间的光束并从下游光束发射电极发射加速光束的电压施加装置。

86. 发明授权

US06007969A Ultra-fine microfabrication method using an energy beam 失效
公开(公告)号：US06007969A
公开(公告)日：1999-12-28
申请号：US610235
申请日：1996-03-04
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Yotaro Hatamura
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Yotaro Hatamura
IPC分类号： G03F1/00 , G03F1/20 , G03F7/00 , G03F7/20 , H01J9/02 , H01L21/033 , H01L21/308 , G03C5/00 , B05D3/00 , B44C1/22
CPC分类号： H01L21/3086 , G03F7/00 , G03F7/001 , G03F7/2065 , G03F7/70358 , H01J9/025 , H01L21/0331 , H01L21/0337 , H01J2209/0223
摘要： An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basis technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. Applications of devices having the fine structures produced by the method include wavelength shifting in optical communications, quantum effect devices and intensive laser devices.

87. 发明授权

US5894058A Ultra-fine microfabrication method using a fast atomic energy beam 失效
标题翻译：使用快速原子能光束的超微细微细加工方法
公开(公告)号：US5894058A
公开(公告)日：1999-04-13
申请号：US870830
申请日：1997-06-06
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Yotaro Hatamura
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Yotaro Hatamura
IPC分类号： G03F1/00 , G03F1/20 , G03F7/00 , G03F7/20 , H01J9/02 , H01L21/033 , H01L21/308 , G03C5/00
CPC分类号： H01L21/3086 , G03F7/00 , G03F7/001 , G03F7/2065 , G03F7/70358 , H01J9/025 , H01L21/0331 , H01L21/0337 , H01J2209/0223
摘要： An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basic technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. The microfabrication method include radiating a Fast Atomic beam through a patterned photoresist Film to fabricate a pattern of 0.1 to 100 nm in a target object.
摘要翻译：使用能量束的超微细微加工方法是基于使用由纳米或微米尺寸的微粒提供的屏蔽来产生通过基本设计的传统光刻技术不可能的各种三维细微结构以产生二维结构。当能量束和屏蔽的辐射的基本技术与使用磁场，电场或激光束的屏蔽定位技术结合使用或不伴随反应气体粒子束或解决方案提供的附加化学效应时，非常高的精细结构纵横比可以精确地生产。微加工方法包括通过图案化的光致抗蚀剂膜辐射快原子束以在目标物体中制造0.1至100nm的图案。

88. 发明授权

US5868952A Fabrication method with energy beam 失效
标题翻译：能量束的制作方法
公开(公告)号：US5868952A
公开(公告)日：1999-02-09
申请号：US617376
申请日：1996-03-18
申请人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
发明人： Masahiro Hatakeyama , Katsunori Ichiki , Takao Kato , Yotaro Hatamura , Masayuki Nakao
IPC分类号： G03F1/00 , G03F1/20 , G03F7/00 , G03F7/20 , H01J9/02 , H01L21/033 , H01L21/308 , B44C1/22
CPC分类号： H01L21/3086 , G03F7/00 , G03F7/001 , G03F7/2065 , G03F7/70358 , H01J9/025 , H01L21/0331 , H01L21/0337 , H01J2209/0223
摘要： Three-dimensional ultra-fine micro-fabricated structures of the order of .mu.m and less are produced for use in advanced optical communication systems and quantum effect devices. The basic components are an energy beam source, a mask member and a specimen stage. Because the mask member is an independent component, various combinations of relative movements of the mask member with respect to the beam axis and/or workpiece can be made with high precision to produce curved or slanted surfaces on a workpiece, thereby producing a multiple lines or arrays of convex or concave micro-lenses. Other examples of fine-structures include deposition of thin films in a multiple line pattern or in an array pattern. Because of the flexibility of fabrication method and material of fabrication, labyrinth seals having curved surfaces with grooved structures can be used as friction reduction means for bearing components. Fine groove dimensions of the order of nm are possible. Energy beams can be any of fast atomic beams, ion beams, electron beam, laser beams, radiation beams, X-ray beams and radical particle beams. Parallel beams are often used, but when a focused beam is used, a technique of reduced projection imaging can be utilized to produce a fine-structure of the order of nm.
摘要翻译：产生了数量级小于等于30的数量级的三维超细微结构，用于先进的光通信系统和量子效应器件。基本部件是能量束源，掩模构件和样品台。由于掩模构件是独立的部件，所以可以高精度地制造掩模构件相对于射束轴线和/或工件的相对运动的各种组合，以在工件上产生弯曲或倾斜的表面，从而产生多条线或阵列的凸或微型微透镜。精细结构的其他实例包括以多线图案或阵列图案沉积薄膜。由于制造方法和制造材料的灵活性，具有带槽结构的曲面的迷宫式密封件可用作轴承部件的摩擦减小装置。可以使nm的数量级的细槽尺寸。能量束可以是快速原子束，离子束，电子束，激光束，辐射束，X射线束和自由基粒子束中的任何一种。通常使用平行光束，但是当使用聚焦光束时，可以利用降低投影成像的技术来产生大约数量级的精细结构。

89. 发明授权

US5708267A Processing method using fast atom beam 失效
标题翻译：加工方法采用快原子束
公开(公告)号：US5708267A
公开(公告)日：1998-01-13
申请号：US677166
申请日：1996-07-09
申请人： Masahiro Hatakeyama
发明人： Masahiro Hatakeyama
IPC分类号： B23K15/00 , B23K17/00 , B23K26/00 , B23K28/02 , G21K5/00 , H01J37/305 , H05H3/00
CPC分类号： H01J37/3056 , G21K5/00 , H05H3/00
摘要： A processing method using a fast atom beam wherein a surface of a substrate to be processed is covered with a masking member formed with patterned holes and the masking member is irradiated with the fast atom beam from a fast atom beam generator so that substrate is processed by the fast atom beam applied to the surface of the substrate through the patterned holes of the masking member.
摘要翻译：一种使用快速原子束的处理方法，其中待加工的衬底的表面被形成有图案的孔的掩模构件覆盖，并且掩蔽构件被来自快速原子束发生器的快速原子束照射，使得衬底由快速原子束通过掩蔽构件的图案化孔施加到衬底的表面。

90. 发明授权

US5563416A Processing apparatus using fast atom beam 失效
标题翻译：使用快原子束的加工装置
公开(公告)号：US5563416A
公开(公告)日：1996-10-08
申请号：US267741
申请日：1994-07-05
申请人： Masahiro Hatakeyama
发明人： Masahiro Hatakeyama
IPC分类号： B23K15/00 , B23K15/06 , B23K17/00 , B23K26/12 , B23K28/02 , G21K5/00 , H05H3/00
CPC分类号： H05H3/00 , G21K5/00
摘要： A processing apparatus using a fast atom beam which has at least one source selected from among a light energy source, a laser beam source, a radical source, an electron beam source, an X-ray or radiation (alpha rays, beta rays, or gamma rays) source, and an ion source, in addition to the fast atom beam source, so that an object to be processed which is disposed in a vacuum container or outside a vacuum is irradiated with a fast atom beam in combination with at least one selected from among the light energy, laser beam, electron beam, X-rays or radiation, radical particles and ion beam, to thereby increase processing speed.
摘要翻译：一种使用快原子束的处理装置，其具有选自光能源，激光束源，自由基源，电子束源，X射线或辐射中的至少一种源（α射线，β射线或伽马射线）源和离子源，以及除了快速原子束源之外的离子源，使得设置在真空容器中或真空外的被处理物体与快速原子束一起照射至少一个选自光能，激光束，电子束，X射线或辐射，自由基粒子和离子束，从而提高处理速度。

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