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81. 发明授权

US08027982B2 Self-service sources for secure search 有权
标题翻译：用于安全搜索的自助服务源
公开(公告)号：US08027982B2
公开(公告)日：2011-09-27
申请号：US11680570
申请日：2007-02-28
申请人： Mark Ture , Muralidhar Krishnaprasad , Thomas Chang , Chi-Ming Yang , Vishu Krishnamurthy
发明人： Mark Ture , Muralidhar Krishnaprasad , Thomas Chang , Chi-Ming Yang , Vishu Krishnamurthy
IPC分类号： G06F17/30
CPC分类号： G06F21/6227 , H04L63/08
摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要翻译：灵活可扩展的架构允许跨企业进行安全搜索。这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。该架构允许在整个企业中爬行和搜索各种源，而不管这些源是否符合常规用户角色模型。该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

82. 发明申请

US20100210041A1 MULTI-ZONE TEMPERATURE CONTROL FOR SEMICONDUCTOR WAFER 有权
标题翻译：用于半导体波形的多区温度控制
公开(公告)号：US20100210041A1
公开(公告)日：2010-08-19
申请号：US12370746
申请日：2009-02-13
申请人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
发明人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
IPC分类号： H01L21/66 , H01L21/306 , H01L21/26 , H01L21/265
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
摘要： An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
摘要翻译：一种装置包括被配置为执行离子注入工艺的处理室。在处理室内设有冷却台板或静电吸盘。冷却台板或静电卡盘构造成支撑半导体晶片。冷却台板或静电卡盘具有多个温度区域。每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体管道，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。冷却剂源分别包括不同的冷却或制冷装置。

83. 发明申请

US20070268104A1 HIGH VOLTAGE TRANSFORMER FOR CONTROLLING INDUCTANCE LEAKAGE 失效
标题翻译：用于控制电感泄漏的高压变压器
公开(公告)号：US20070268104A1
公开(公告)日：2007-11-22
申请号：US11434159
申请日：2006-05-16
申请人： Chun-Kong Chan , Jeng-Shong Wang , Jin-Jiun Jiang , Chi-Ming Yang
发明人： Chun-Kong Chan , Jeng-Shong Wang , Jin-Jiun Jiang , Chi-Ming Yang
IPC分类号： H01F5/00
CPC分类号： H01F38/10
摘要： A high voltage transformer for controlling inductance leakage used for a multiple lamp driving system includes at least one wire frame, a first winding, a second winding, a first magnetic unit, and a second magnetic unit. There is a receiving space in the wire frame for receiving the first magnetic unit, and a first region and a second region is formed on its surface. The first winding and the second winding are individually wound at the first region and the second region. The second magnetic unit is covered on the side of the wire frame. On an appropriate location of the bottom of the second magnetic unit, a transverse beam extends. Thereby, the transverse beam fully separates the low voltage magnetic flux path produced on the first magnetic unit by the first winding and the second winding and the high voltage magnetic flux path produced by the AC.
摘要翻译：用于控制用于多灯驱动系统的电感泄漏的高压变压器包括至少一个线架，第一绕组，第二绕组，第一磁单元和第二磁单元。在线框架中具有用于接收第一磁性单元的接收空间，并且在其表面上形成第一区域和第二区域。第一绕组和第二绕组在第一区域和第二区域单独地卷绕。第二磁性单元被覆盖在线框架的侧面上。在第二磁性单元的底部的适当位置，横梁延伸。由此，横梁通过第一绕组和第二绕组以及由AC产生的高压磁通路完全分离在第一磁性单元上产生的低压磁通路径。

84. 发明申请

US20070214129A1 Flexible Authorization Model for Secure Search 审中-公开
标题翻译：灵活的安全搜索授权模型
公开(公告)号：US20070214129A1
公开(公告)日：2007-09-13
申请号：US11680558
申请日：2007-02-28
申请人： Mark Ture , Muralidhar Krishnaprasad , Mark Davis , Cindy Hsin , Meeten Bhavsar , Hiroshi Koide , Joaquin Delgado , Chi-Ming Yang , Visar Nimani , Hui Ouyang , Sachin Bhatkar
发明人： Mark Ture , Muralidhar Krishnaprasad , Mark Davis , Cindy Hsin , Meeten Bhavsar , Hiroshi Koide , Joaquin Delgado , Chi-Ming Yang , Visar Nimani , Hui Ouyang , Sachin Bhatkar
IPC分类号： G06F17/30
CPC分类号： G06F16/951
摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要翻译：灵活可扩展的架构允许跨企业进行安全搜索。这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。该架构允许在整个企业中爬行和搜索各种或多个源，无论这些源是否符合常规用户角色模型。该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

85. 发明授权

US4414025A Process for addition of silicon to iron 失效
标题翻译：将硅加入铁的工艺
公开(公告)号：US4414025A
公开(公告)日：1983-11-08
申请号：US400183
申请日：1982-07-20
申请人： Chi-Ming Yang
发明人： Chi-Ming Yang
IPC分类号： C21C1/02 , C21C1/04 , C22C33/00
CPC分类号： C21C1/02 , C21C1/04
摘要： Ferro-silicon powder after pulverzation to a predetermined grain size is injected, preferably by a pneumatic medium, into molten iron to increase its silicon content, either alone or prior to a desulfurization treatment to make foundry pig iron with a low sulfur content.
摘要翻译：将粉碎后的铁硅粉末优选通过气动介质注入铁水中以增加其含硅量，单独地或在脱硫处理之前，以制备低硫含量的铸造生铁。

86. 发明授权

US08173504B2 Method of fabricating gate electrode using a treated hard mask 有权
标题翻译：使用经处理的硬掩模制造栅电极的方法
公开(公告)号：US08173504B2
公开(公告)日：2012-05-08
申请号：US12758491
申请日：2010-04-12
申请人： Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
发明人： Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
IPC分类号： H01L21/8238
CPC分类号： H01L21/823828 , H01L21/26513 , H01L21/26586 , H01L21/28035 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/4916 , H01L29/66545 , H01L29/6659 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.
摘要翻译：公开了一种用于制造集成器件的方法。在基板上设置多晶硅栅电极层。在一个实施例中，在多晶硅栅极电极层上提供处理以在栅电极层中引入物质并在其中形成电中和部分。然后，将具有有限厚度的硬掩模层施加在经处理的多晶硅栅极电极层上。因此，在将硬掩模层和经处理的多晶硅栅电极图案化之后，在栅极结构上对基板进行倾斜角度离子注入。

87. 发明申请

US20100240224A1 MULTI-ZONE SEMICONDUCTOR FURNACE 审中-公开
标题翻译：多区半导体炉
公开(公告)号：US20100240224A1
公开(公告)日：2010-09-23
申请号：US12408427
申请日：2009-03-20
申请人： Hsin-Hsien Wu , Chun-Lin Chang , Chi-Ming Yang
发明人： Hsin-Hsien Wu , Chun-Lin Chang , Chi-Ming Yang
IPC分类号： H01L21/26 , F27D11/00
CPC分类号： H01L21/67109 , F27B17/0025
摘要： A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers.
摘要翻译：适用于晶圆化学气相沉积处理的半导体炉。该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。提供一种加热系统，其包括布置并可操作以加热该腔室的多个加热器。加热系统包括至少一个顶部加热器; 至少一个底部加热器和沿着反应室的高度间隔开的多个侧壁加热器，以控制室内的温度变化，并促进晶片上均匀的膜沉积厚度。

88. 发明申请

US20080194091A1 Method for fabricating nitrided oxide layer 审中-公开
标题翻译：氮化氧化物层的制造方法
公开(公告)号：US20080194091A1
公开(公告)日：2008-08-14
申请号：US11705435
申请日：2007-02-13
申请人： Su-Horng Lin , Hsuan-Yih Chu , Chi-Ming Yang
发明人： Su-Horng Lin , Hsuan-Yih Chu , Chi-Ming Yang
IPC分类号： H01L21/31 , H01L21/3205
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/31155 , H01L21/3143 , H01L21/3144
摘要： A method for fabricating a nitrided oxide layer. A plasma reactor including a pedestal for supporting a substrate is provided. A substrate having an oxide layer thereon is placed on the pedestal. Nitridation of the oxide layer is performed by exposing the substrate to decoupled nitrogen plasma, wherein a positive bias is applied to the pedestal during the nitridation to reduce a potential drop between the plasma and the substrate surface.
摘要翻译：一种氮化氧化物层的制造方法。提供了包括用于支撑基板的基座的等离子体反应器。其上具有氧化物层的基板放置在基座上。通过将衬底暴露于解耦氮等离子体来进行氧化层的氮化，其中在氮化期间将正偏压施加到基座以减小等离子体和衬底表面之间的电位降。

89. 发明授权

US08404572B2 Multi-zone temperature control for semiconductor wafer 有权
标题翻译：半导体晶圆的多区域温度控制
公开(公告)号：US08404572B2
公开(公告)日：2013-03-26
申请号：US12370746
申请日：2009-02-13
申请人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
发明人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
IPC分类号： H01L21/425
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
摘要： An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
摘要翻译：一种装置包括被配置为执行离子注入工艺的处理室。在处理室内设有冷却台板或静电吸盘。冷却台板或静电卡盘构造成支撑半导体晶片。冷却台板或静电卡盘具有多个温度区域。每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体导管，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。冷却剂源分别包括不同的冷却或制冷装置。

90. 发明授权

US07301430B1 High voltage transformer for controlling inductance leakage 失效
标题翻译：用于控制电感泄漏的高压变压器
公开(公告)号：US07301430B1
公开(公告)日：2007-11-27
申请号：US11434159
申请日：2006-05-16
申请人： Chun-Kong Chan , Jeng-Shong Wang , Jin-Jiun Jiang , Chi-Ming Yang
发明人： Chun-Kong Chan , Jeng-Shong Wang , Jin-Jiun Jiang , Chi-Ming Yang
IPC分类号： H01F5/00
CPC分类号： H01F38/10
摘要： A high voltage transformer for controlling inductance leakage used for a multiple lamp driving system includes at least one wire frame, a first winding, a second winding, a first magnetic unit, and a second magnetic unit. There is a receiving space in the wire frame for receiving the first magnetic unit, and a first region and a second region is formed on its surface. The first winding and the second winding are individually wound at the first region and the second region. The second magnetic unit is covered on the side of the wire frame. On an appropriate location of the bottom of the second magnetic unit, a transverse beam extends. Thereby, the transverse beam fully separates the low voltage magnetic flux path produced on the first magnetic unit by the first winding and the second winding and the high voltage magnetic flux path produced by the AC.
摘要翻译：用于控制用于多灯驱动系统的电感泄漏的高压变压器包括至少一个线架，第一绕组，第二绕组，第一磁单元和第二磁单元。在线框架中具有用于接收第一磁性单元的接收空间，并且在其表面上形成第一区域和第二区域。第一绕组和第二绕组在第一区域和第二区域单独地卷绕。第二磁性单元被覆盖在线框架的侧面上。在第二磁性单元的底部的适当位置，横梁延伸。由此，横梁通过第一绕组和第二绕组以及由AC产生的高压磁通路完全分离在第一磁性单元上产生的低压磁通路径。

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