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    • 81. 发明授权
    • Semiconductor laser diodes
    • 半导体激光二极管
    • US08831062B2
    • 2014-09-09
    • US13639833
    • 2011-04-06
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • H01S5/00H01S5/042H01S5/22H01S5/20H01S5/10H01S5/16
    • H01S5/0425H01S5/0014H01S5/1039H01S5/1053H01S5/1064H01S5/16H01S5/2004H01S5/22
    • A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
    • 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区域和p区域之间设置有有源区域,其具有前端部分和后端部分,邻近n区域的n-金属化层,并且具有用于将电流注入到第一注入器中的第一注入器 有源区和与n金属化层相对并且邻近p区的p金属化层,并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度,以便与有源区域的另一部分中的电流注入相比,控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地,这种均匀的电流密度显着提高了激光二极管的可靠性。
    • 83. 发明申请
    • SEMICONDUCTOR LASER DIODES
    • 半导体激光二极管
    • US20130070800A1
    • 2013-03-21
    • US13639833
    • 2011-04-06
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • Hans-Ulrich PfeifferAndrew Cannon CarterJörg TrogerNorbert LichtensteinMichael SchwarzAbram JakubowiczBoris Sverdlov
    • H01S5/40H01L21/28
    • H01S5/0425H01S5/0014H01S5/1039H01S5/1053H01S5/1064H01S5/16H01S5/2004H01S5/22
    • A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
    • 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区和p区之间设置有一有源区,该区具有一前端和一后端段,n-金属化层位于邻近该n-区并具有用于将电流注入 有源区和与n金属化层相对并且邻近p区的p金属化层,并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度,以便与有源区域的另一部分中的电流注入相比,控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地,这种均匀的电流密度显着提高了激光二极管的可靠性。
    • 86. 发明授权
    • High power semiconductor opto-electronic device
    • 大功率半导体光电器件
    • US08111727B2
    • 2012-02-07
    • US11993247
    • 2006-06-28
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • Christoph HarderAbram JakubowiczNicolai MatuschekJoerg TrogerMichael Schwarz
    • H01S5/00
    • H01S5/0425H01S5/1053H01S5/1064H01S5/168H01S5/2036H01S5/2216H01S5/2231
    • Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
    • 半导体激光二极管,特别是具有高光输出功率的广域单发射极(BASE)激光二极管,通常用于光电子。 这种激光二极管的光输出功率和稳定性是至关重要的,并且在正常使用期间的任何劣化是显着的缺点。 本发明涉及这种激光二极管的改进设计,特别是通过以限定的方式控制激光二极管中的电流而在非常高的光输出功率下显着地最小化或避免这种激光二极管的劣化的改进。 与现有技术的设计相比,这种激光二极管(前端)部分退化的最小化或避免显着增加了长期稳定性。 这是通过控制在其小面附近的激光二极管的载流子注入,以避免突然的注入电流峰值来实现的。 为此,电流阻挡隔离层(14)在其边缘或边界处成形为使得其显示不均匀或部分不连续的机械结构,导致朝向所述隔离层的边缘的有效隔离减小,从而提供 在隔离区域和非隔离区域之间基本上非突然或甚至近似连续的过渡。
    • 87. 发明授权
    • System for updating advertisement bids
    • 广告出价更新系统
    • US07974880B2
    • 2011-07-05
    • US11701275
    • 2007-01-31
    • Michael Schwarz
    • Michael Schwarz
    • G06Q30/00
    • G06Q30/08G06Q30/02G06Q30/0207G06Q30/0243G06Q30/0244G06Q30/0247G06Q30/0273G06Q30/0275G06Q40/04
    • A system for updating advertisement bids including a query engine and an advertisement selection engine. The query engine provides an advertisement query to the advertisement selection engine. The advertisement selection engine includes a query processing module that retrieves advertisements associated with the advertisement query based on bids. The bid update module generates a suggested bid for an advertiser. The bid update module may be configured to automatically update the current bid for an advertisement based on the suggested bid. Further, the bid update module may be configured to determine the suggested bid by calculating a maximum profit position for the advertisement and projecting an envy free point for the maximum profit position.
    • 一种用于更新广告投标的系统,包括查询引擎和广告选择引擎。 查询引擎向广告选择引擎提供广告查询。 广告选择引擎包括查询处理模块,其基于出价检索与广告查询相关联的广告。 出价更新模块为广告客户生成建议的出价。 出价更新模块可以被配置为基于所建议的出价自动地更新广告的当前出价。 此外,出价更新模块可以被配置为通过计算广告的最大利润位置并且为最大利润位置投射嫉妒点来确定建议的出价。