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81. 发明授权

US4844773A Process for etching silicon nitride film 失效
标题翻译：氮化硅膜蚀刻工艺
公开(公告)号：US4844773A
公开(公告)日：1989-07-04
申请号：US188138
申请日：1988-04-26
申请人： Lee M. Loewenstein , Cecil J. Davis
发明人： Lee M. Loewenstein , Cecil J. Davis
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated form a mixture of a source of Fluorine and Helium with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：在低压工艺模块中利用远程和原位等离子体的组合的多晶硅膜的蚀刻工艺和等离子体是由氟和氦源与处理模块内的处理室的混合物形成的，通常处于环境温度温度。

82. 发明授权

US4842687A Method for etching tungsten 失效
标题翻译：蚀刻钨的方法
公开(公告)号：US4842687A
公开(公告)日：1989-06-27
申请号：US203512
申请日：1988-05-25
申请人： Rhett B. Jucha , Cecil J. Davis
发明人： Rhett B. Jucha , Cecil J. Davis
IPC分类号： C23F4/00 , H01L21/00 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/67069 , C23F4/00 , H01L21/3085 , H01L21/32136
摘要： A thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source, such as SF.sub.6, plus a bromine source, such as HBr, plus a hydrocarbon source, e.g., an alkyl, such as methane. This passivating chemistry provides a very robust passivant which will provide highly anisotropic high rate flow etching, and will also improve the selectivity to photoresist.
摘要翻译：在等离子体轰击条件下，通过使用包括氟源（例如SF 6），溴源如HBr加上烃源（例如烷基）的进料气体混合物，各向异性地蚀刻薄膜金属（例如钨）如甲烷。这种钝化化学提供了非常坚固的钝化剂，其将提供高度各向异性的高速率流动蚀刻，并且还将提高对光致抗蚀剂的选择性。

83. 发明授权

US4838984A Method for etching films of mercury-cadmium-telluride and zinc sulfid 失效
标题翻译：镉 - 碲化镉和硫化锌蚀刻薄膜的方法
公开(公告)号：US4838984A
公开(公告)日：1989-06-13
申请号：US74451
申请日：1987-07-16
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
IPC分类号： H01L21/465
CPC分类号： H01L21/465
摘要： A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.
摘要翻译：使用包括含氢气和/或含烷烃的气体提供各向异性蚀刻的气体混合物，利用远程等离子体和原位等离子体对各种各向异性蚀刻汞 - 碲化镉（HgCdTe）或硫化锌（ZnS）的膜。

84. 发明授权

US4832777A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4832777A
公开(公告)日：1989-05-23
申请号：US198634
申请日：1988-05-18
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A process module having a heating module with two heating rings and a reflector. The heating rings are separately controlled in order to provide a variety of heating configurations to a wafer. A transparent wall or a conductive substrate is provided between the heating rings and a workpiece which is to be heated.
摘要翻译：一种具有具有两个加热环的加热模块和反射器的处理模块。加热环被单独控制，以便向晶片提供各种加热构型。在加热环和待加热的工件之间设置有透明壁或导电基板。

85. 发明授权

US4830705A Method for etch of GaAs 失效
标题翻译： GaAs蚀刻方法
公开(公告)号：US4830705A
公开(公告)日：1989-05-16
申请号：US188140
申请日：1988-04-26
申请人： Lee M. Loewenstein , Cecil J. Davis
发明人： Lee M. Loewenstein , Cecil J. Davis
IPC分类号： H01L21/306
CPC分类号： H01L21/02019 , H01L21/30621
摘要： A process for etch of GaAs wafers which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, CH.sub.4 ; and one of a group of CF.sub.4 or F.sub.2 with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：用于蚀刻GaAs晶片的方法，其利用低压工艺模块中的远程和原位等离子体的组合，并且等离子体由氦，CH 4的混合物产生; 并且处理室内的一组CF4或F2中的一个通常处于环境温度。

86. 发明授权

US4818327A Wafer processing apparatus 失效
标题翻译：晶圆加工设备
公开(公告)号：US4818327A
公开(公告)日：1989-04-04
申请号：US74419
申请日：1987-07-16
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/00 , B44C1/22 , C23C14/00 , C23F1/02 , H01L21/306
CPC分类号： H01L21/67115
摘要： A processing apparatus and method for rapid thermal processing wherein the radiant heat source is dynamically reconfigurable to change the heating distribution across the radii of the wafer. Since the radiative and conductive heat flow paths from parts of the wafer near the center are different from the heat flow paths for the parts of the wafer near the edge, the loadings will change dynamically as the wafer is heated and cooled. This temperature dependence in the relative couplings across the wafer makes it very difficult to maintain a flat temperature profile during heatup and cooldown, and failure to maintain a flat temperature profile can cause wafer damage (especially wafer warpage). The present application describes a processing apparatus and method which changes the distribution dynamically, so that a higher fraction of the total power is provided to the wafer edge regions after the wafer is at high temperature. This can be done by using (as a radiant heat source) a lamp module wherein the central portion of the lamp reflector module is mechanically moved in and out to change the center to edge distribution of heating power.
摘要翻译：一种用于快速热处理的处理装置和方法，其中辐射热源是动态可重构的，以改变横跨晶片半径的加热分布。由于靠近中心的晶片部分的辐射和导电热流路径不同于靠近边缘的晶片部分的热流路径，所以当晶片被加热和冷却时，负载将动态变化。在晶圆相对耦合中的这种温度依赖性使得在加热和冷却期间保持平坦的温度分布非常困难，并且不能保持平坦的温度分布可能导致晶片损坏（特别是晶片翘曲）。本申请描述了动态地改变分布的处理装置和方法，使得在晶片处于高温之后，将总功率的较高部分提供给晶片边缘区域。这可以通过使用（作为辐射热源）灯模块来完成，其中灯反射器模块的中心部分被机械地移入和移出以改变加热功率的中心到边缘分布。

87. 发明授权

US4818326A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4818326A
公开(公告)日：1989-04-04
申请号：US188139
申请日：1988-04-26
申请人： Jiann Liu , Cecil J. Davis , Lee M. Loewenstein
发明人： Jiann Liu , Cecil J. Davis , Lee M. Loewenstein
IPC分类号： H01L21/00 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L21/67109
摘要： A processing apparatus and method for providing a process module with a low pressure, low energy ion implanter and a remote microwave plasma generator and a source of thermal energy, which is adapted to receive wafers for processing in a low pressure carrier.
摘要翻译：一种用于向处理模块提供低压，低能量离子注入机和远程微波等离子体发生器和热能源的处理装置和方法，其适于接收用于在低压载体中处理的晶片。

88. 发明授权

US4816116A Semiconductor wafer transfer method and arm mechanism 失效
标题翻译：半导体晶片转移方法和臂机构
公开(公告)号：US4816116A
公开(公告)日：1989-03-28
申请号：US116922
申请日：1987-11-03
申请人： Cecil J. Davis , Robert Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Robert Matthews , Randall C. Hildenbrand
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687 , B44C1/22
CPC分类号： H01L21/67748 , H01L21/67201 , H01L21/67772 , Y10S414/137 , Y10S414/139 , Y10S414/141
摘要： A complete integrated circuit processing module, wherein multiple processing stations, each with its own vacuum isolation, are located inside a single module which is held at hard vacuum. A wafer transport arm mechanism permits interchange of wafers among the processing stations and a load lock. The load lock is equipped to remove and replace wafers from a vacuum-sealed wafer carrier. The wafers remain face-down and under hard vacuum during all the wafers handling steps.
摘要翻译：一个完整的集成电路处理模块，其中具有其自身真空隔离的多个处理站位于保持在硬真空下的单个模块内部。晶片传送臂机构允许在处理站之间交换晶片和加载锁定。负载锁被设置为从真空密封的晶片载体中移除和替换晶片。在所有晶片处理步骤期间，晶片保持面朝下且在硬真空下。

89. 发明授权

US4657620A Automated single slice powered load lock plasma reactor 失效
标题翻译：自动单片动力装载等离子体反应堆
公开(公告)号：US4657620A
公开(公告)日：1987-04-14
申请号：US663905
申请日：1984-10-22
申请人： Cecil J. Davis , John E. Spencer , Dan T. Hockersmith , Randall C. Hildenbrand , Frederick W. Brown , Stanford P. Kohan
发明人： Cecil J. Davis , John E. Spencer , Dan T. Hockersmith , Randall C. Hildenbrand , Frederick W. Brown , Stanford P. Kohan
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32
摘要： A plasma reactor for the manufacturing of semiconductor devices has powered loadlocks and a main process chamber where slices can be processed one slice at a time with pre-etch plasma treatments before the main etching processing and afterwards receive a post etch treatment. The system comprises powered loadlocks, a main chamber, vacuum pumps radio frequency power supplier, radio frequency matching networks, heat exchangers and throttle valve and pressure controllers, gas flow distribution and microprocessor controllers. The semiconductor wafers are automatically fed one at a time from storage cassettes through isolation gates with articulated mechanical arms to a powered entry loadlock for pre-etching processes. At the completion of the pre-etching processing, the semiconductor wafer is transferred to the main chamber automatically for the main etch process and then to the powered exit loadlock for post etch treatment and finally to an output cassette.
摘要翻译：用于制造半导体器件的等离子体反应器具有动力负载锁和主处理室，其中可以在主蚀刻处理之前用预蚀刻等离子体处理一次一片地处理切片，然后进行后蚀刻处理。该系统包括动力装载锁，主室，真空泵射频电源，射频匹配网，热交换器和节流阀和压力控制器，气流分配和微处理器控制器。半导体晶片一次一个地从存储盒通过具有关节式机械臂的隔离门自动馈送到用于预蚀刻工艺的动力入口负载锁。在完成预蚀刻处理之前，将半导体晶片自动转移到主室用于主蚀刻工艺，然后转移到用于后蚀刻处理的动力出口负载锁，最后转移到输出盒。

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