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81. 发明申请

US20060169207A1 Semiconductor manufacturing apparatus capable of preventing adhesion of particles 审中-公开
标题翻译：能够防止颗粒附着的半导体制造装置
公开(公告)号：US20060169207A1
公开(公告)日：2006-08-03
申请号：US11068780
申请日：2005-03-02
申请人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa , Kenji Maeda , Tomoyuki Tamura
发明人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa , Kenji Maeda , Tomoyuki Tamura
IPC分类号： G01N5/02 , H01L21/44 , C23C16/00
CPC分类号： H01L21/67742 , C23C16/4401 , H01J2237/022 , H01L21/67017 , H01L21/67748
摘要： A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the processing chamber and the transportation chamber, a transportation device including a transportation arm disposed in the transportation chamber and a sample holding portion disposed at a tip of the arm to hold the sample on the sample holding portion, transport the sample from the transportation chamber to the processing chamber, and transport the processed sample from the processing chamber to the transportation chamber, and a gas blowing unit for blowing gas against the sample so as to be interlocked with a transportation position of the sample being transported to prevent adhesion of floating particles to a surface of the sample.
摘要翻译：半导体制造装置包括真空处理室和输送室，每个真空处理室和输送室均包括气体供给单元和排气单元，用于将样品放置在其上并将样品保持在处理室中的样品放置电极，用于打开/关闭的闸阀所述处理室与所述输送室之间的通道，包括设置在所述输送室中的输送臂的输送装置和设置在所述臂的前端的样品保持部，以将样品保持在所述样品保持部上，运送室到处理室，并将处理后的样品从处理室输送到运送室;以及气体吹送单元，用于将气体吹向样品，以与被运送的样品的运输位置互锁，以防止粘附漂浮的颗粒到样品的表面。

82. 发明申请

US20050017178A1 Micro-spectroscopic measuring device and micro-chemical system 失效
标题翻译：微光谱测量装置和微观化学系统
公开(公告)号：US20050017178A1
公开(公告)日：2005-01-27
申请号：US10788275
申请日：2004-03-01
申请人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
发明人： Taro Ogawa , Toshiki Sugawara , Kazuhiko Hosomi , Masataka Shirai , Toshio Katsuyama , Kaoru Umemura , Masaru Izawa , Kazuhiko Sagara , Hiroshi Kakibayashi
IPC分类号： G01J3/14 , B01J19/00 , B01L3/00 , G01J3/42 , G01N21/05 , G01N21/31 , G01N21/35 , G01N21/3577 , G01N37/00
CPC分类号： G01N21/31 , B01L3/502715 , B01L2200/027 , B01L2300/0654 , B01L2300/0816 , B01L2300/0887 , G01N21/05 , G01N2021/0346 , G01N2021/058 , G01N2201/0873
摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.
摘要翻译：具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

83. 发明授权

US06677244B2 Specimen surface processing method 有权
标题翻译：试样表面处理方法
公开(公告)号：US06677244B2
公开(公告)日：2004-01-13
申请号：US10135516
申请日：2002-05-01
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.
摘要翻译：用于蚀刻具有栅极氧化膜的样品的等离子体处理方法包括使用电磁波在真空室中产生等离子体，向样品施加rf偏置功率，在样品的充电电压达到击穿之前关闭rf偏置功率电压，在样品的充电电压基本上下降之后接通rf偏置功率，并且重复接通和关断rf偏置功率以处理样品。关闭时间至少比准时更长。

84. 发明授权

US06673685B2 Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06673685B2
公开(公告)日：2004-01-06
申请号：US10083397
申请日：2002-02-27
申请人： Masahito Mori , Naoshi Itabashi , Masaru Izawa
发明人： Masahito Mori , Naoshi Itabashi , Masaru Izawa
IPC分类号： H01L21336
CPC分类号： H01L21/28123 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment. The process can be implemented to provide the effects of forming a gate no longer than 50 nm (beyond the limit of exposure) without restrictions on the resist thickness; reducing contamination resulting from transfer of wafers from one step to next, thereby improving yields; preventing resist from hydrolysis by ArF laser, thereby reducing roughening which adversely affects the gate width; and ensuring stable yields despite variation in dimensions and contamination owing to the additional dry cleaning step and feed-forward control based on CD inspection and contamination inspection.
摘要翻译：用于经济有效地制造不超过50nm的栅电极的方法，其超出了曝光的限度，其特征在于组合执行的具有高抗蚀剂选择性的栅电极修整和掩模修剪。该方法还优选的特征在于在真空环境中进行修整和干燥清洁，并且还可以包括在真空环境中检查尺寸和污染的步骤。可以实现该过程以提供形成栅极不超过50nm（超过曝光极限）而不限制抗蚀剂厚度的效果; 减少晶片从一步转移到下一步导致的污染，从而提高产量; 防止ArF激光器的抗水解，从而减少对栅极宽度有不利影响的粗糙化; 并确保稳定的产量，尽管由于额外的干洗步骤和基于CD检查和污染检查的前馈控制而导致尺寸和污染的变化。

85. 发明授权

US06643893B2 Apparatus for cleaning semiconductor wafers in a vacuum environment 失效
标题翻译：用于在真空环境中清洁半导体晶片的装置
公开(公告)号：US06643893B2
公开(公告)日：2003-11-11
申请号：US09809202
申请日：2001-03-16
申请人： Yoshinori Momonoi , Kenetsu Yokogawa , Masaru Izawa , Shinichi Tachi
发明人： Yoshinori Momonoi , Kenetsu Yokogawa , Masaru Izawa , Shinichi Tachi
IPC分类号： B08B1100
CPC分类号： H01L21/67028 , B08B5/02 , B08B7/0035
摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.
摘要翻译：一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在用高速气流除去晶片的表面。此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。

86. 发明授权

US06506674B2 Method of manufacturing a semiconductor integrated circuit device 有权
公开(公告)号：US06506674B2
公开(公告)日：2003-01-14
申请号：US09964628
申请日：2001-09-28
申请人： Takenobu Ikeda , Masahiro Tadokoro , Masaru Izawa , Takashi Yunogami
发明人： Takenobu Ikeda , Masahiro Tadokoro , Masaru Izawa , Takashi Yunogami
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/76802 , H01L21/76814
摘要： A hole is formed on an insulating film made of silicon oxide by selectively plasma-etching the insulating film with an etching gas containing C5F8, O2, and Ar firstly under a condition in which the deposition property of a polymer layer is weak and secondly under a condition in which that of the polymer layer is strong.

87. 发明授权

US5928441A Hot rolling method of steel products and hot rolling roll for steel products 失效
标题翻译：钢铁产品热轧方法和钢铁产品热轧辊
公开(公告)号：US5928441A
公开(公告)日：1999-07-27
申请号：US809561
申请日：1997-03-24
申请人： Masaru Izawa , Yoshiaki Kusaba , Kenji Tsubouchi
发明人： Masaru Izawa , Yoshiaki Kusaba , Kenji Tsubouchi
IPC分类号： B21B1/08 , B21B27/10 , C23C22/00
CPC分类号： B21B27/10 , B21B1/088
摘要： A hot rolling method of steel products comprises rolling steel products while forming a film of an oxalate (such as iron oxalate, calcium oxalate and the like) on the roll surfaces which have contact with the steel products to be rolled and a hot rolling roll for steel products which has an oxalate film on the roll surfaces having contact with the steel products to be rolled. The oxalate film is effective in preventing steel products, particularly stainless steel products, from seizing between the rolls and the steel products to be rolled, preventing wear of the rolls, and preventing the deterioration of both the rolls and the steel products, when the steel products are subjected to hot rolling.
摘要翻译： PCT No.PCT / JP96 / 02287。 371日期1997年3月24日 102（e）1997年3月24日PCT PCT 1996年8月12日PCT公布。出版物WO97 / 06900 日期1997年2月27日钢铁制品的热轧方法包括轧制钢产品，同时在与要轧制的钢产品接触的辊表面上形成草酸盐（如草酸铁，草酸钙等）的膜，在与要轧制的钢制品接触的辊表面上具有草酸盐膜的钢产品用热轧辊。草酸盐膜能够有效地防止钢材，特别是不锈钢制品在辊和被轧钢产品之间的卡住，防止辊的磨损，防止轧辊和钢材的劣化，当钢产品经受热轧。

88. 发明授权

US09070724B2 Vacuum processing apparatus and plasma processing apparatus with temperature control function for wafer stage 有权
标题翻译：具有晶片台温度控制功能的真空处理装置和等离子体处理装置
公开(公告)号：US09070724B2
公开(公告)日：2015-06-30
申请号：US13546071
申请日：2012-07-11
申请人： Takumi Tandou , Masaru Izawa
发明人： Takumi Tandou , Masaru Izawa
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , H01L21/67
CPC分类号： H01L21/67109 , H01L21/67017
摘要： A plasma processing apparatus includes a processing chamber, a wafer table, a refrigerant passage disposed inside the wafer table in which a refrigerant flows, a refrigeration cycle comprising the refrigerant passage in the wafer table as a first evaporator in which the refrigerant is evaporated as a result of a heat-exchange therein, a compressor, a condenser and an expansion valve, a second evaporator, and a controlling unit which adjusts a number of rotations of the compressor based upon a degree of dryness of the refrigerant at a position on the refrigeration cycle after passing through the first evaporation in a range in which dry-out does not occur in the first evaporator, and the dryness of the refrigerant being determined based upon an amount of a heat exchange during the evaporation of the refrigerant in the second evaporator.
摘要翻译：等离子体处理装置包括处理室，晶片台，布置在制冷剂流动的晶片台内部的制冷剂通道，制冷循环，其包括作为制冷剂蒸发的第一蒸发器的晶片台中的制冷剂通路，其中热交换的结果，压缩机，冷凝器和膨胀阀，第二蒸发器和控制单元，其基于制冷剂位置上的制冷剂的干燥程度来调节压缩机的转数在第一蒸发器中不发生干燥的范围内经过第一蒸发之后的循环，并且基于在第二蒸发器中的制冷剂的蒸发期间的热交换量来确定制冷剂的干燥度。

89. 发明授权

US08632688B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08632688B2
公开(公告)日：2014-01-21
申请号：US13236800
申请日：2011-09-20
申请人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
发明人： Masaru Izawa , Kouichi Yamamoto , Kenji Nakata , Atsushi Itou
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32972 , H01J37/32899 , H01L21/32137
摘要： In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.
摘要翻译：在等离子体处理装置中，其中通过匹配箱向电抗器内的处理室内的设置在样品台中的电极提供射频功率，通过匹配在at的数据值的转换点处的功率的特定值来处理晶片特征数据中包括等离子体的发光强度，其时间变化的大小，匹配箱的匹配位置以及提供给电极的射频功率的电压值的变化等特性数据中的至少两种，在处理期间利用通过使用在不同反应器中的相同晶片上执行的处理期间检测到的特征数据检测到的值而获得多个值的功率，多个处理室或等离子体之间的状态之间的差异的半导体处理装置或反应堆。

90. 发明申请

US20130228550A1 DRY ETCHING APPARATUS AND METHOD 审中-公开
标题翻译：干蚀设备和方法
公开(公告)号：US20130228550A1
公开(公告)日：2013-09-05
申请号：US13571018
申请日：2012-08-09
申请人： Masahito MORI , Masaru Izawa , Katsushi Yagi
发明人： Masahito MORI , Masaru Izawa , Katsushi Yagi
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01L21/3065 , H01J37/321 , H01J37/32706 , H03H7/40 , H05H2001/4682
摘要： There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.
摘要翻译：提供了包括其上放置晶片的台，天线电极，高频电源，喷淋板和RF偏置电源的干式蚀刻装置。此外，偏置路径控制器设置在天线电极的一侧。偏置路径控制器与由淋浴板形成的相对于RF偏压的频率的静电抗器串联谐振。然后，偏置路径控制器通过可变感抗来改变和接地阻抗。利用这种机制，即使使用石英喷淋板用于腐蚀性气体，也可以实现高度均匀的蚀刻。

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