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81. 发明申请

US20120199726A1 IMAGING APPARATUS AND PROCESSING METHOD THEREOF 有权
标题翻译：成像装置及其处理方法
公开(公告)号：US20120199726A1
公开(公告)日：2012-08-09
申请号：US13446003
申请日：2012-04-13
申请人： Toru Koizumi
发明人： Toru Koizumi
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H04N5/3742 , H04N5/2355 , H04N5/35572 , H04N5/374 , H04N5/37457
摘要： A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.
摘要翻译：通过在单个载波累积时间周期内多次读出在载波累积单元中累积的载波来扩大动态范围的固态成像装置。

82. 发明授权

US08138528B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08138528B2
公开(公告)日：2012-03-20
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

83. 发明申请

US20110194005A1 SIGNAL READING APPARATUS AND IMAGE PICKUP SYSTEM USING THE SIGNAL READING APPARATUS 有权
标题翻译：信号读取装置和使用信号读取装置的图像拾取系统
公开(公告)号：US20110194005A1
公开(公告)日：2011-08-11
申请号：US13089514
申请日：2011-04-19
申请人： Toru Koizumi , Hideaki Takada
发明人： Toru Koizumi , Hideaki Takada
IPC分类号： H04N5/335
CPC分类号： H04N5/3742
摘要： A signal reading apparatus includes first and second common signal lines from which a signal from a signal generation unit is output and first and second amplifier circuits and a switch configured to control a conductive state of the first and the second common signal lines. The signal reading apparatus includes a first signal reading method of reading a signal from the first common signal line after being amplified in the first amplifier circuit and reading a signal from the second common signal line after being amplified in the second amplifier circuit and a second signal reading method of turning ON the switch to read the signal from the first common signal line and the signal from the second common signal line individually after being amplified in the first amplifier circuit. The signal reading apparatus includes a control unit for controlling between the first and second signal reading methods.
摘要翻译：信号读取装置包括从信号产生单元输出信号的第一和第二公共信号线以及第一和第二放大器电路以及被配置为控制第一和第二公共信号线的导通状态的开关。信号读取装置包括第一信号读取方法，在第一放大器电路中被放大后读取来自第一公共信号线的信号，并且在第二放大器电路中被放大后读取来自第二公共信号线的信号，以及第二信号在第一放大器电路中被放大后，接通开关的第一公共信号线的信号和来自第二公共信号线的信号的读取方法。信号读取装置包括用于在第一和第二信号读取方法之间进行控制的控制单元。

84. 发明申请

US20110157440A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110157440A1
公开(公告)日：2011-06-30
申请号：US13045775
申请日：2011-03-11
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H04N5/335
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要翻译：为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

85. 发明授权

US07936487B2 Solid-state imaging device 有权
公开(公告)号：US07936487B2
公开(公告)日：2011-05-03
申请号：US12958817
申请日：2010-12-02
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H04N1/04
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

86. 发明授权

US07745247B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US07745247B2
公开(公告)日：2010-06-29
申请号：US12250282
申请日：2008-10-13
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

87. 发明授权

US07723548B2 Bis(phosphine) boronium salt, production method of bis(phosphine) boronium salt, and bis(phosphine) boronium salt produced by the production method 有权
标题翻译：双（膦）硼鎓盐，双（膦）硼鎓盐的制备方法和通过制备方法生产的双（膦）硼鎓盐
公开(公告)号：US07723548B2
公开(公告)日：2010-05-25
申请号：US12067069
申请日：2007-01-30
申请人： Kentaro Yamaguchi , Hiroshi Danjo , Toru Koizumi , Tsuneo Imamoto
发明人： Kentaro Yamaguchi , Hiroshi Danjo , Toru Koizumi , Tsuneo Imamoto
IPC分类号： C07F5/02
CPC分类号： C07F9/5027 , C07F9/65688
摘要： The present invention aims to provide a bis(phosphine) boronium salt to be used as a building block or the like for producing a diphosphine compound effective mainly for various kinds of transition metal-catalyzed reactions and further to provide a preferable production method of the bis(phosphine) boronium salt and a bis(phosphine) boronium salt to be produced by the production method.The present invention provides a bis(phosphine) boronium salt having the structure defined by the following formula (1).
摘要翻译：本发明的目的在于提供一种双（膦）硼鎓盐，用作制造主要用于各种过渡金属催化反应的二膦化合物的结构单元等，并且还提供优选的双（膦）硼鎓盐和通过制备方法生产的双（膦）硼鎓盐。本发明提供具有由下式（1）定义的结构的双（膦）硼鎓盐。

88. 发明授权

US07705373B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07705373B2
公开(公告)日：2010-04-27
申请号：US11773731
申请日：2007-07-05
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极半导体区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

89. 发明授权

US07679114B2 Image pickup device and camera for converting charges into voltage 有权
标题翻译：用于将电荷转换成电压的图像拾取装置和相机
公开(公告)号：US07679114B2
公开(公告)日：2010-03-16
申请号：US11782295
申请日：2007-07-24
申请人： Toru Koizumi
发明人： Toru Koizumi
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.
摘要翻译：本发明的目的是提供一种在光学特性，饱和电荷量等方面不会使传感器性能恶化的固体摄像装置和照相机。包括具有多个像素的像素区域的固态图像传感器至少包括光电二极管和放大部分，放大从像素区域中的光电二极管输出的光电荷，并且还包括阱电极，用于获得阱区的良好电位，其中布置放大部分。在阱电极和光电二极管之间，没有布置绝缘膜的元件隔离区域。此外，在光电二极管存储电荷的第一半导体区域的表面上，设置与第一半导体区域相反的导电类型的第二半导体层。

90. 发明授权

US07616355B2 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US07616355B2
公开(公告)日：2009-11-10
申请号：US11104538
申请日：2005-04-13
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H04N1/04
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要翻译：为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

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