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81. 发明申请

US20070048979A1 Heating apparatus, and coating and developing apparatus 有权
标题翻译：加热装置和涂装显影装置
公开(公告)号：US20070048979A1
公开(公告)日：2007-03-01
申请号：US11505810
申请日：2006-08-18
申请人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshi Kimura , Shinichi Hayashi , Hikaru Ito
发明人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshi Kimura , Shinichi Hayashi , Hikaru Ito
IPC分类号： C30B11/00
CPC分类号： C30B33/02 , C30B35/00 , H01L21/67098 , H01L21/67748
摘要： A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.
摘要翻译：加热装置2包括壳体20; 平面加热室4，其设置在壳体2中并且适于加热用作基板的晶片W，加热室4的一侧开口用于承载和执行晶片; 以及设置在加热室4中的加热板44,45，使得晶片W能够从上下两者加热。冷却板3设置在位于加热室4的开口附近的壳体20中，用于在被加热板44,45加热之后冷却晶片W.此外，在壳体20中设置有承载装置用于在冷却板3的上部位置和加热室4的内部之间承载晶片W，使得可以在将晶片W保持在加热室4中的情况下进行晶片W的热处理。

82. 发明申请

US20060165408A1 Coating and developing apparatus and coating and developing method 有权
标题翻译：涂装开发设备及涂层开发方法
公开(公告)号：US20060165408A1
公开(公告)日：2006-07-27
申请号：US11239403
申请日：2005-09-30
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka
IPC分类号： G03D11/00
CPC分类号： H01L21/67276 , H01L21/67173 , H01L21/67178 , H01L21/67754
摘要： A coating and developing apparatus comprises a process block which forms a resist film on a wafer, then transfers the wafer to an exposure apparatus, and performs a developing process on the wafer after exposure, and an interface transfer mechanism provided between the process block and the exposure apparatus. The process block includes unit blocks for coating-film formation and unit blocks for development laid out in a stacked manner. When an abnormality occurs in the interface transfer mechanism, an ordinary process in the unit block for coating-film formation is performed on those substrates which are present in that unit block for coating-film formation, after which processed wafers are retreated to a retaining unit and transfer of any wafer into the unit block for coating-film formation is inhibited.
摘要翻译：涂层显影装置包括在晶片上形成抗蚀剂膜的处理块，然后将晶片转移到曝光装置，并且在曝光后对晶片进行显影处理，以及设置在处理块和曝光装置处理块包括用于涂膜形成的单元块和以堆叠方式布置的用于显影的单元块。当在界面转移机构发生异常时，在用于涂膜形成的单元块中存在的那些基板上进行用于涂膜形成的单元块中的常规工艺，之后将处理的晶片退回到保持单元并且将任何晶片转移到用于涂膜形成的单元块中被抑制。

83. 发明申请

US20050155550A1 Coating film forming apparatus and coating unit 失效
公开(公告)号：US20050155550A1
公开(公告)日：2005-07-21
申请号：US11080756
申请日：2005-03-16
申请人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
发明人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
IPC分类号： H01L21/027 , G03F7/16 , H01L21/00 , B05D3/12 , B05C11/00
CPC分类号： H01L21/6715 , G03F7/162 , Y10S134/902
摘要： A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

84. 发明授权

US06872256B2 Film forming unit 有权
标题翻译：成膜单元
公开(公告)号：US06872256B2
公开(公告)日：2005-03-29
申请号：US10611991
申请日：2003-07-03
申请人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
发明人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
IPC分类号： H01L21/027 , B05C11/08 , G03F7/16 , H01L21/00 , B05C5/00 , B05B15/02
CPC分类号： H01L21/6715 , B05B15/55 , B05C11/08 , G03F7/16 , G03F7/162 , H01L21/67051
摘要： The present invention is a film forming unit for discharging a coating solution from a coating solution discharge nozzle toward a substrate to form a layer on a surface of the substrate, which has a supply flow path for supplying a cleaning fluid to a discharge flow path continuing to a discharging port of the coating solution discharge nozzle. When the cleaning fluid is positively supplied directly to the discharge flow path of the coating solution discharge nozzle, the supply pressure of the cleaning fluid as well as the capability of cleaning is added. Therefore, further effective cleaning is attained in compare with the conventional case where a coating solution discharge nozzle is simply dipped into a cleaning fluid. In consequence, even when the discharging port of the nozzle is minute, it is possible to perfectly remove the contamination. This allows the discharge pressure to remain constant so as to form a uniform coating layer on the substrate.
摘要翻译：本发明是一种成膜单元，其用于将涂布液从涂布液排出喷嘴朝向基板排出以在基板的表面上形成层，该基板的表面具有用于将清洁流体供应到排出流路连续的供给流路到涂布液排出喷嘴的排出口。当清洁液被直接供给到涂布液排出喷嘴的排出流路时，添加清洗液的供给压力和清洗能力。因此，与将涂布液排出喷嘴简单地浸入清洗液中的常规情况相比，可以进一步有效地清洗。因此，即使喷嘴的排出口微小，也可以完全除去污染物。这允许排出压力保持恒定，从而在基底上形成均匀的涂层。

85. 发明授权

US06716478B2 Coating film forming apparatus and coating film forming method 失效
标题翻译：涂膜成膜装置和涂膜成型方法
公开(公告)号：US06716478B2
公开(公告)日：2004-04-06
申请号：US10095439
申请日：2002-03-13
申请人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
发明人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
IPC分类号： B05D512
CPC分类号： H01L21/6715 , B05C5/0208 , B05C5/0216 , B05C5/0291 , H01L21/0271
摘要： A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.
摘要翻译：晶片W的涂布区域分为例如三个区域。晶片W和/或供给喷嘴以预定的涂布方向和/或涂布方向被驱动，使得相邻分割区域的涂层开始位置彼此不相邻和/或涂层不是按照当相邻分割区域的一个区域的涂覆结束位置和另一个区域的涂层开始位置彼此相邻时，涂覆结束位置和涂布开始位置，从而形成每个分割区域的抗蚀剂液体的液体膜晶片W的表面的结果。结果，仅在对应的区域中发生将抗蚀剂液体吸引到涂层开始位置以增加该部分的膜厚度的现象。因此，可以提高膜厚度的内表面的均匀性。

86. 发明授权

US06670287B2 Coating method and coating apparatus 失效
公开(公告)号：US06670287B2
公开(公告)日：2003-12-30
申请号：US10151967
申请日：2002-05-22
申请人： Masami Akimoto , Yoichi Deguchi
发明人： Masami Akimoto , Yoichi Deguchi
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , B05D1/005 , B05D3/0263 , B05D3/0486 , B05D3/0493 , B05D3/068 , B05D5/00 , H01L21/31 , H01L21/3105
摘要： A closed space is formed in a reduced pressure drying station, and the closed space is brought to a vacuum state. In this state, an EB unit irradiates a wafer mounted on a hot plate with an electron beam to foam an insulating film material. Subsequently, the hot plate is raised to a predetermined temperature, and drying processing is performed under a reduced pressure. As described above, since the foaming processing is performed in the reduced pressure drying station, bubbles remain in the insulating film, so that the existence of the bubbles can decrease the relative dielectric constant.

87. 发明授权

US06616760B2 Film forming unit 失效
公开(公告)号：US06616760B2
公开(公告)日：2003-09-09
申请号：US09736397
申请日：2000-12-15
申请人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
发明人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
IPC分类号： B05B1502
CPC分类号： H01L21/6715 , B05B15/55 , B05C11/08 , G03F7/16 , G03F7/162 , H01L21/67051
摘要： The present invention is a film forming unit for discharging a coating solution from a coating solution discharge nozzle toward a substrate to form a layer on a surface of the substrate, which has a supply flow path for supplying a cleaning fluid to a discharge flow path continuing to a discharging port of the coating solution discharge nozzle. When the cleaning fluid is positively supplied directly to the discharge flow path of the coating solution discharge nozzle, the supply pressure of the cleaning fluid as well as the capability of cleaning is added. Therefore, further effective cleaning is attained in compare with the conventional case where a coating solution discharge nozzle is simply dipped into a cleaning fluid. In consequence, even when the discharging port of the nozzle is minute, it is possible to perfectly remove the contamination. This allows the discharge pressure to remain constant so as to form a uniform coating layer on the substrate.

88. 发明授权

US06536964B1 Substrate processing system and substrate processing method 失效
标题翻译：基板加工系统和基板加工方法
公开(公告)号：US06536964B1
公开(公告)日：2003-03-25
申请号：US09652141
申请日：2000-08-31
申请人： Takahiro Kitano , Masami Akimoto , Takafumi Toshimitsu
发明人： Takahiro Kitano , Masami Akimoto , Takafumi Toshimitsu
IPC分类号： G03D504
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , G03F7/3028
摘要： In an FAB having a plurality of coating and developing processing apparatus, atmospheric pressure is measured by a barometer provided in the FAB, and a measured value is sent to each of the coating and developing processing apparatus via a host computer. In each coating and developing processing apparatus, based on the value, the rotation speed of a substrate in a resist solution coating unit is regulated only when the atmospheric pressure value exceeds a predetermined allowable value which is preset according to the type of chemical. As a result, without causing the complication of the apparatus, plant and equipment investment can be held to minimum, and the coating film thickness of a substrate can be maintained at a predetermined thickness.
摘要翻译：在具有多个涂布显影处理装置的FAB中，通过设置在FAB中的气压计来测量大气压，经由主计算机将测定值发送给各涂装显影处理装置。在每个涂覆和显影处理装置中，基于该值，只有当大气压力值超过根据化学品类型预设的预定容许值时，才调节抗蚀剂溶液涂布单元中的基底的旋转速度。结果，不会导致装置的复杂化，可以将植物和设备投资保持最小，并且可以将基板的涂膜厚度保持在预定厚度。

89. 发明授权

US06383948B1 Coating film forming apparatus and coating film forming method 失效
公开(公告)号：US06383948B1
公开(公告)日：2002-05-07
申请号：US09734922
申请日：2000-12-13
申请人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
发明人： Takahiro Kitano , Masateru Morikawa , Yukihiko Esaki , Nobukazu Ishizaka , Norihisa Koga , Kazuhiro Takeshita , Hirofumi Ookuma , Masami Akimoto
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , B05C5/0208 , B05C5/0216 , B05C5/0291 , H01L21/0271
摘要： A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.

90. 发明授权

US06332724B1 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US06332724B1
公开(公告)日：2001-12-25
申请号：US09653162
申请日：2000-09-01
申请人： Mitsuteru Yano , Norio Semba , Kouzou Kanagawa , Issei Ueda , Masami Akimoto , Kazuhiko Ohi
发明人： Mitsuteru Yano , Norio Semba , Kouzou Kanagawa , Issei Ueda , Masami Akimoto , Kazuhiko Ohi
IPC分类号： H01L21027
CPC分类号： H01L21/67248 , G03F7/16 , G03F7/30 , H01L21/67109 , Y10S134/902
摘要： Outside air taken in from the outside is cooled to a predetermined temperature by a cooler, and the air cooled by the cooler flows through a low temperature side flow path in a heat exchanger, whereas outside air flows through a high temperature side flow path in the heat exchanger, which allows heat to be exchanged between the cooled air and the outside air. The air, flowing through the low temperature side flow path in the heat exchanger and warmed up by the outside air flowing through the high temperature side flow path, is warmed and humidified by a warmer and a humidifier, and the air with predetermined temperature and humidity is supplied to a coating processing unit. Moreover, the outside air, flowing through the high temperature side flow path in the heat exchanger and cooled by the air flowing through the low temperature side flow path, is warmed by a warmer, and the air with a predetermined temperature is supplied to a developing processing unit. Thus, an apparatus for regulating the temperature and humidity of air to be supplied to the coating processing unit and the developing processing unit can be downsized, and running costs for electric power consumption and the like can be reduced.
摘要翻译：从外部吸入的外部空气通过冷却器被冷却到预定温度，并且由冷却器冷却的空气在热交换器中流过低温侧流路，而外部空气流过高温侧流路热交换器，其允许在冷却的空气和外部空气之间进行热交换。在热交换器中流过低温侧流路的空气被流经高温侧流路的外部空气加热，通过加温器和加湿器进行加热和加湿，并且具有预定温度和湿度的空气被供给到涂布处理单元。此外，在热交换器中流过高温侧流路并通过流经低温侧流路的空气进行冷却的外部空气被加热器加热，并且将具有预定温度的空气供给到显影处理单元。因此，可以将用于调节供给到涂布处理单元和显影处理单元的空气的温度和湿度的装置小型化，并且可以减少耗电量等的运行成本。

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