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81. 发明专利

JPS5735374A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5735374A
公开(公告)日：1982-02-25
申请号：JP11195980
申请日：1980-08-11
申请人： Mitsubishi Electric Corp
发明人： OOHAYASHI YOSHIKAZU , DENDA MASAHIKO , SATOU SHINICHI , KINOSHITA SHIGEJI , TSUBOUCHI NATSUO
IPC分类号： H03F1/52 , H01L27/02 , H01L27/06 , H01L29/78 , H02H7/20 , H03F1/42
CPC分类号： H01L27/0255
摘要： PURPOSE:To lower the reverse voltage resisting capability of a protective diode by a method wherein impurity concentration is kept low in a substrate surface. CONSTITUTION:A highly doped P type semiconductor substrate 1 is covered with an epitaxially grown single crystal semiconductor layer 2 that possesses the same type of conductivity as the substrate 1 but is sufficiently lower as regards impurity concentration than in the substrate 1. The surface of the single crystal semiconductor layer 2 is then subjected to such a heat treatment process as ion injection or diffusion which results in the formation of a semiconductor domain 3 conductive feature whereof is different from the substrate 1 thanks to the introduction of highly concentrated impurities with a different conductive feature. The domain 3 extends to the highly doped substrate 1. The domain 3 thus has two junctions: a P-N type junction wherein the bottom of the domain 3 meets the substrate 1 at a junction 4 and the other wherein the side of the domain 3 meets the semiconductor 2 at a junction 5.
摘要翻译：目的：通过在衬底表面中保持低浓度的方法降低保护二极管的反向耐压能力。构成：高掺杂P型半导体衬底1被外延生长的单晶半导体层2覆盖，该外延生长单晶半导体层2具有与衬底1相同的导电性，但是相对于衬底1而言，杂质浓度足够低。然后将单晶半导体层2进行离子注入或扩散的这种热处理工艺，由于引入了具有不同导电性的高浓度杂质，导致半导体区域3的导电特征不同于衬底1 特征。结构域3延伸到高度掺杂的衬底1.畴3因此具有两个结：PN型结，其中结构域3的底部在结4处与衬底1相遇，另一个结合域3的一侧与半导体2在5号接头处。

82. 发明专利

JPS571252A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS571252A
公开(公告)日：1982-01-06
申请号：JP7520680
申请日：1980-06-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： DENDA MASAHIKO , SATOU SHINICHI , TSUBOUCHI NATSUO , KINOSHITA SHIGEJI , OOHAYASHI YOSHIKAZU
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108
摘要： PURPOSE:To obtain a memory unit being strong to alpha rays by a method wherein in a semiconductor substrate, specific resistance of the substrate is made t differ between a capacitor part and a transistor part. CONSTITUTION:Specific resistance of the P type Si substrate 6 having crystal orientation of is made as 1-0.01OMEGAcm. Specific resistance of an ion implanting part 8 is enhanced by selective ion implantation of an N type impurity having a diffusion coefficient being the same grade with the P type impurity. Then a P type layer 7 having specific resistance of about 10OMEGAcm being the same grade with the layer 8 is formed by vapor growth. When heat treatment is performed in succession, the layer on the inside region 6a of the substrate is held as a P type layer, but on the layer 8, because impurities of P type and N type are compensated, specific resistance of the substrate is held at high. Because the life of electrons and holes in the region 6a is short, almost no electron reaches the capacitor part, therefore almost no effect is applied by electrons generated in the P layer 6a part. Moreover because the layer 8 under a gate electrode 3 of the transistor has high specific resistance, almost no effect is applied to characteristic of the transistor. Accordingly the memory being strong to alpha rays can be obtained without deterioration of characteristic.

83. 发明专利

JPS56158453A FORMATION OF PATTERN 失效
公开(公告)号：JPS56158453A
公开(公告)日：1981-12-07
申请号：JP6430880
申请日：1980-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： ABE HARUHIKO , TSUBOUCHI NATSUO , HARADA HIROJI
IPC分类号： H01L21/027 , G03F7/20 , H01L21/30 , H01L21/3205
摘要： PURPOSE:To obtain the minute pattern directly by a method wherein a part of a film of molybdenum or molybedenum silicide is selectively converted into molybdenum oxide, and the thermic subliming quality thereof is utilized. CONSTITUTION:An SiO2 ground film 2 is provided on a ground substrate 1, Mo3 is evaporated thereon and is held in an oxidizing gas atmosphere containing O2 at about 500 deg.C. When a laser beam 6 having the prescribed diameter and energy is irradiated on the surface of Mo3 for the prescribed time, a part thereof is heated and sublimed and is removed from the surface of the ground film 2. When the laser beam is controlled by a computor to select the irradiating position automatically and is made to be transferred irradiating the position for the prescribed time, the optional shaped minute pattern can be drawn directly on the Mo film face. The same result can be obtained with the molybdenum silicide film.

84. 发明专利

JPS56152736A CHEMICAL VAPOR DEPOSITION DEVICE USING DECREASED PRESSURE 失效
公开(公告)号：JPS56152736A
公开(公告)日：1981-11-26
申请号：JP5663980
申请日：1980-04-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , HARADA HIROJI , WAKAMIYA WATARU , KINOSHITA SHIGEJI , NOMOTO SUMIO
IPC分类号： C30B25/02 , B01J19/08 , C01B21/068 , C23C16/44 , C23C16/455 , C23C16/507 , H01L21/205
摘要： PURPOSE:To prevent the deterioration of a rotary pump and reduce its repair time by providing a plasma generating section between a chemical vapor phase reaction section and a vacuum exhaust system of a chemical vapor deposition device using decreased pressure. CONSTITUTION:A high-frequency power source 17 of the outside is connected between the 1st and 2nd electrodes 13, 15 and a plasma generating section C is provided between the chemical vapor phase reaction section A and vacuum exhaust system B of the decompression type chemical vapor phase growing device. A reacting gas 6 is put in a plasma state. Then, the unreacted gas or reacted formed gas cracks or electrolytically dissociates, and since this reduces the absorption in the oil of a rotary pump 11 or the decomposition of the oil, the deterioration of the rotary pump is prevented and its repair times are reduced.

85. 发明专利

JPS56134733A PRODUCTION OF SEMICONDUCTOR 失效
公开(公告)号：JPS56134733A
公开(公告)日：1981-10-21
申请号：JP3979180
申请日：1980-03-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITOU KAZUO , DENDA MASAHIKO , TSUBOUCHI NATSUO , SATOU SHINICHI
IPC分类号： H01L21/28 , H01L21/768
摘要： PURPOSE:To prevent cracking and disconnection in a wiring conductive film by making the surrounding wall of a contact hole like a staircase. CONSTITUTION:An insulator film 3 is formed on the surface of an n type substrate 1 provided with a p type diffused film 2. Then, with a resist mask 5, the insulator film 3 on an n type region is selectively etched to form a concave section 8 at a depth 1/2 of the film thickness for instance. After removal of the resist 5, a resist mask 9 is formed with a surrounding wall for a window 4a inside the surrounding wall of the concave section 8 and the insulator film 3 is etched to form a contact hole 11. After the removal of the resist 7, a wiring conductive film 12 is formed and connected to the surface of the p type diffused layer 2. In this contact hole 11, the step on the surrounding wall represents a staircase at a height almost 1/2 of the thickness of the insulator film 3, preventing cracking and disconnection in the wiring conductive film 12.

86. 发明专利

JPS56126693A ROTARY PUMP 失效
公开(公告)号：JPS56126693A
公开(公告)日：1981-10-03
申请号：JP3140180
申请日：1980-03-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA SHIGEJI , HARADA HIROTSUGU , TSUBOUCHI NATSUO , WAKAMIYA WATARU , NOMOTO SUMIO
IPC分类号： C23C14/24 , F04B25/02 , F04C25/02
摘要： PURPOSE:To prevent the deterioration and failure of a pump by plasmatizing the exhaust gas being introduced into the rotary pump boody, thus preventing introduction of unreacted gases to the pump. CONSTITUTION:Corrosive gases such as NH3, NH4Cl, etc. and extremely reactive gases such as SiH2Cl2, etc. are discharged from a chamber 31 when forming a silicon nitride film on a semiconductor wafer 5, such exhaust gas being introduced into a rotary pump 6 through a piping 2b. However, the deterioration and failure of the rotary pump 6 can be prevented as such gases supplied to the pump body 62 after being plasmatized in a plasma generating chamber 61.

87. 发明专利

JPS5666063A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5666063A
公开(公告)日：1981-06-04
申请号：JP14178279
申请日：1979-10-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： DENDA MASAHIKO , SATOU SHINICHI , TSUBOUCHI NATSUO
IPC分类号： H01L27/10 , H01L21/8234 , H01L21/8242 , H01L27/06 , H01L27/088 , H01L27/108 , H01L29/78
摘要： PURPOSE:To prevent the influence of alpha rays irradiating from the outside to a semiconductor device by a method wherein an oxide film is formed corresponding to a capacitor region on the semiconductor substrate, the film is covered with a polycrystalline Si layer of the same conductive type with the substrate, and a polycrystalline Si gate electrode is provided at one side face installing a gate oxide film between them. CONSTITUTION:The SiO2 film 12 is formed corresponding to the capacitor region on the P type Si substrate 11, the exposed upper surface and the side faces are surrounded with the polycrystalline Si film 14 and the same impurity with the substrate 11 is doped therein to impart the conductively. The first gate oxide film 15 is formed covering it, and the first polycrystalline Si film 16 is adhered on it. The gate electrode 18 consisting of the second polycrystalline Si film 17 is provided on its one side face with the entermediary of the second gate oxide film 17, and an N type region 19 is diffusion formed in the substrate to be in contact with the electrode 18 to form a memory cell. By this constitution, even if electrons or holes may be generated by the irradiation of alpha rays from the outside, they can not reach the cell.

88. 发明专利

JPS5658245A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5658245A
公开(公告)日：1981-05-21
申请号：JP13406679
申请日：1979-10-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , SATOU SHINICHI , DENDA MASAHIKO
IPC分类号： H01L21/768 , H01L21/28
摘要： PURPOSE:To obtain a fine connection with a high accuracy easily by connecting an Al wiring and a semiconductor substrate through a poly Si left at the connection following the total conversion thereof of into SiO2. CONSTITUTION:An opening is etched through an SiO2 film 2 on an Si substrate 1 and a poly Si wiring 3 is provided thereon. P-doped poly Si 7 is laminated by a decompression CVD method and a mask of Si3N4 8 is applied thereon. The poly Si 7 is converted into PSG 9 by a high pressure oxidation. After Si3N4 8 is etched by a solution of phosphoric acid, PSG 9 is smoothed by treatment at about 1,000 deg.C while a P-diffusion layer is formed in the substrate 1. When an Al wiring 6 is laminated thereon, the PSG layer is electrically connected to the substrate through the poly Si 7. Accordingly, the smooth step allows P to be diffused through the substrate from the PSG eliminating disconnection. There is no penetrating of Al thereby improving the reliability.

89. 发明专利

JPS5654053A FORMATION OF MULTILAYER WIRING 失效
公开(公告)号：JPS5654053A
公开(公告)日：1981-05-13
申请号：JP13037879
申请日：1979-10-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： DENDA MASAHIKO , SATOU SHINICHI , WAKAMIYA WATARU , HARADA HIROJI , TSUBOUCHI NATSUO , MIYOSHI HIROKAZU
IPC分类号： H01L21/31 , H01L21/768
摘要： PURPOSE:To prevent the mutual diffusion between the wiring layer made of an Al or Al alloy by imparting the surface of a plasma CVD nitride film an oxidizing property. CONSTITUTION:An opening 3 is made in an oxide film 3 on a semiconductor substrate 1 and an Al wiring layer 4 is made thereon. Then, plasma is generated in a gas mixture of SiH4, MH3 and N2 to have a nitride film 5 grown and then, a gas having an oxidizing property such as O2 is mixed to have an SixOyNy layer 5' grown on the surface layer. Then, a through hole 6 is provided to form an Al wiring layer 7 as in the past. With such an arrangement, there is no short-circuit between the Al wiring layers 4 and 7 despite several hours of sintering at 500 deg.C thereby improving the reliability of the device. the same effect can be obtained when a thin Si-rich layer is made on he surface layer in addition to the oxynitride layer by increasing the mixing ratio of NH3.

90. 发明专利

JPS5654044A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5654044A
公开(公告)日：1981-05-13
申请号：JP13065079
申请日：1979-10-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , HARADA HIROJI , MIYOSHI HIROKAZU , SATOU SHINICHI , WAKAMIYA WATARU , DENDA MASAHIKO
IPC分类号： H01L21/318 , H01L21/31
摘要： PURPOSE:To obtain an interlayer insulating layer, surface thereof is planed, by a method wherein an Si3N4 film formed at a comparatively low temperature under normal pressure or less used in place of PSG and the interlayer insulating layer by the flowing of PSG. CONSTITUTION:When forming an insulating film burying an eaves part (a) of a device, SiH2Cl2 and NH3 are reacted in NH3 gas at a temperature such as 750 deg.C under pressure such as 0.5torr. According to this pressure reduction CVD method, reaction gas also infiltrates in extremely narrow space easily and deposits, and a surface of the first conductive layer 2 is flatly coated with an Si3N4 film 5. The film 5 is opened 6, and the second conductive layer 4 is formed. On the other hand, a reaction of a complete different nature is formed in the formation of a SiO2 film even according to the same pressure reduction CVD method, such an intermediate depositing layer is not made up, and space continuously remains in the eaves part.

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