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81. 发明授权

US08237195B2 Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate 有权
标题翻译：功率MOSFET在金属衬底上的半导体异质结构中具有应变通道
公开(公告)号：US08237195B2
公开(公告)日：2012-08-07
申请号：US12248874
申请日：2008-10-09
申请人： Tat Ngai , Qi Wang , Joelle Sharp
发明人： Tat Ngai , Qi Wang , Joelle Sharp
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L21/6835 , H01L29/1054 , H01L29/165 , H01L29/407 , H01L29/41741 , H01L29/45 , H01L29/66734 , H01L29/7813 , H01L2221/6835 , H01L2924/30105 , H01L2924/3025
摘要： A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a first metal layer. The first semiconductor layer has a first semiconductor material and a second semiconductor material in a relaxed heterostructure and is heavily doped. A second semiconductor layer overlies the first semiconductor layer and has a first semiconductor material and a second semiconductor material in a relaxed heterostructure. The second semiconductor layer is more lightly doped than the first semiconductor layer. A trench extends into the second semiconductor layer and a channel region has a strained layer of the first semiconductor material adjacent a trench sidewall. The strained channel region provides enhanced carrier mobility and improves performance of the field effect transistor.
摘要翻译：具有覆盖金属基板上的异质结构半导体的应变半导体沟道区域的场效应晶体管器件包括覆盖第一金属层的第一半导体层。第一半导体层在松弛异质结构中具有第一半导体材料和第二半导体材料，并且是重掺杂的。第二半导体层覆盖在第一半导体层上，并且在松弛的异质结构中具有第一半导体材料和第二半导体材料。第二半导体层比第一半导体层更轻掺杂。沟槽延伸到第二半导体层中，并且沟道区具有邻近沟槽侧壁的第一半导体材料的应变层。应变通道区域提供增强的载流子迁移率并且改善场效应晶体管的性能。

82. 发明授权

US08193413B2 Temporal seed promoters for expressing genes in plants 有权
标题翻译：用于在植物中表达基因的时间种子启动子
公开(公告)号：US08193413B2
公开(公告)日：2012-06-05
申请号：US12572816
申请日：2009-10-02
申请人： Qi Wang , Lisa M. Weaver , Tim N. Oulmassov , Jeffrey Ahrens , Patrice Dubois , Jeffrey Q. Shen
发明人： Qi Wang , Lisa M. Weaver , Tim N. Oulmassov , Jeffrey Ahrens , Patrice Dubois , Jeffrey Q. Shen
IPC分类号： C12N15/79 , C12N15/82
CPC分类号： C12N15/8234 , C12N15/8245 , C12N15/8247 , C12N15/8254
摘要： The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression during a defined period of embryogenesis. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.
摘要翻译：本发明涉及植物遗传工程领域。更具体地，本发明涉及在胚胎发生的确定时期内的种子特异性基因表达。本发明提供能够转录种子中的异源核酸序列的启动子，以及修饰，产生和使用它们的方法。

83. 发明申请

US20120090049A1 SEED SPECIFIC USP PROMOTERS FOR EXPRESSING GENES IN PLANTS 有权
标题翻译：用于在植物中表达基因的特定的USP促销剂
公开(公告)号：US20120090049A1
公开(公告)日：2012-04-12
申请号：US12896713
申请日：2010-10-01
申请人： Qi Wang , Tanya Fagaly , Ronald Bassuner , Jihong Liang , Tim N. Oulmassov , John Dabrowski
发明人： Qi Wang , Tanya Fagaly , Ronald Bassuner , Jihong Liang , Tim N. Oulmassov , John Dabrowski
IPC分类号： A01H1/00 , A23K1/00 , C12N5/10 , A01H5/10 , C12N1/15 , C07H21/04 , C11B1/00 , A01H5/00 , A23L1/212 , C12N1/21
CPC分类号： C12N15/8254
摘要： The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.
摘要翻译：本发明涉及植物遗传工程领域。更具体地，本发明涉及种子特异性基因表达。本发明提供能够转录种子中的异源核酸序列的启动子，以及修饰，产生和使用它们的方法。

84. 发明授权

US08101500B2 Semiconductor device with (110)-oriented silicon 有权
标题翻译：具有（110）取向硅的半导体器件
公开(公告)号：US08101500B2
公开(公告)日：2012-01-24
申请号：US12174030
申请日：2008-07-16
申请人： Qi Wang , Minhua Li , Yuri Sokolov
发明人： Qi Wang , Minhua Li , Yuri Sokolov
IPC分类号： H01L21/30
CPC分类号： H01L29/7813 , H01L21/30608 , H01L21/76254 , H01L29/045 , H01L29/407 , H01L29/41741 , H01L29/66348 , H01L29/66363 , H01L29/66734
摘要： A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.
摘要翻译：在金属衬底上的重掺杂P型（110）半导体层上形成半导体器件的方法包括提供第一支撑衬底并形成覆盖在第一支撑衬底上的P型重掺杂（110）硅层。至少第一支撑衬底的顶层可通过相对于P型重掺杂（110）硅层的选择性蚀刻工艺而移除。在（110）硅层中和上方形成垂直半导体器件结构。垂直装置结构包括顶部金属层，其特征在于沿<110>方向的电流传导。该方法包括使用机械研磨和选择性蚀刻工艺将第二支撑衬底接合到顶部金属层并去除第一支撑衬底，以暴露P型重掺杂（110）硅层的表面并允许金属层在表面上形成。

85. 发明申请

US20110298047A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE STRUCTURES AND METHODS 有权
标题翻译：三维半导体器件结构与方法
公开(公告)号：US20110298047A1
公开(公告)日：2011-12-08
申请号：US13212175
申请日：2011-08-18
申请人： Qi Wang
发明人： Qi Wang
IPC分类号： H01L21/768 , H01L27/088
CPC分类号： H01L21/6835 , H01L23/481 , H01L23/49541 , H01L23/49562 , H01L24/11 , H01L24/17 , H01L24/31 , H01L24/83 , H01L25/074 , H01L29/41741 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403 , H01L2224/2919 , H01L2224/83851 , H01L2924/01019 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3025 , H01L2924/0665 , H01L2924/00014 , H01L2924/00
摘要： A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor devices. The first semiconductor device has a first plurality of terminals on a front side of the first semiconductor device and a first metal substrate on its back side, wherein one of the first plurality of terminals in the first semiconductor device is electrically coupled to the first metal substrate. The second semiconductor device has a second plurality of terminals on a front side of the second semiconductor device and a second metal substrate on its back side, wherein the second semiconductor device further includes a second metal substrate on its back side. The patterned conductive layer includes a plurality of conductive regions. Each of the conductive regions is bonded to a conductor coupled to one of the first plurality of terminals and another conductor coupled to one of the second plurality of terminals.
摘要翻译：三维半导体器件包括第一半导体器件，第二半导体器件和设置在第一和第二半导体器件之间的图案化导电层。第一半导体器件在第一半导体器件的前侧具有第一多个端子，在其背面具有第一金属基板，其中第一半导体器件中的第一多个端子中的一个电连接到第一金属基板。第二半导体器件在第二半导体器件的前侧具有第二多个端子，在其后侧具有第二金属基板，其中第二半导体器件在其后侧还包括第二金属基板。图案化导电层包括多个导电区域。每个导电区域被结合到耦合到第一多个端子中的一个的导体和耦合到第二多个端子中的一个的另一个导体。

86. 发明申请

US20110284755A1 HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR 有权
标题翻译：高灵敏度，固态中性探测器
公开(公告)号：US20110284755A1
公开(公告)日：2011-11-24
申请号：US13146780
申请日：2009-01-30
申请人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
发明人： Pauls Stradins , Howard M. Branz , Qi Wang , Harold R. Mchugh
IPC分类号： G01T3/08 , H01L21/28
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L31/02
摘要： An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer (860) may be deposited on the contact pixels (830) such as with use of inkjet printing of nanoparticle ink.
摘要翻译：一种用于检测包括作为氢化非晶硅p-i-n二极管结构的α粒子检测层（240）的慢或热中子（160）的装置（200）。该装置包括底部金属触点（220）和顶部金属触点（250），二极管结构（240）位于两个触点（220,250）之间，以便于检测α粒子（170）。装置（200）包括由含有硼-10同位素的材料形成的中子转换层（230）。顶部接触（250）被像素化，每个接触像素延伸到或靠近设备的边缘以促进电接触。接触像素具有细长体以允许它们跨越装置表面（242）延伸，每个像素具有小的表面积，以基于连接到每个像素的电流尖峰检测电路或放大器匹配电容。中子转换层（860）可以沉积在接触像素（830）上，例如使用纳米颗粒油墨的喷墨印刷。

87. 发明申请

US20110185381A1 System and Method for Matching Targeted Advertisements for Video Content Delivery 有权
标题翻译：用于匹配视频内容传送的目标广告的系统和方法
公开(公告)号：US20110185381A1
公开(公告)日：2011-07-28
申请号：US12958102
申请日：2010-12-01
申请人： Qi Wang , Shu Wang , Yu Huang , Hong Heather Yu , Dong-Qing Zhang
发明人： Qi Wang , Shu Wang , Yu Huang , Hong Heather Yu , Dong-Qing Zhang
IPC分类号： H04N7/025
CPC分类号： H04N21/84 , G06Q30/02 , G06Q30/0255 , G06Q30/0269 , H04N21/23424 , H04N21/25891 , H04N21/4756 , H04N21/6582 , H04N21/8456
摘要： In accordance with an embodiment, a method of matching video content to advertising content includes electronically receiving a video content metadata from a content provider, and matching the video content metadata to advertising content metadata of a global list of advertisements. The video content metadata corresponds to video content being sent to a user device and includes at least one keyword. Furthermore, the advertising content metadata corresponds to advertising content and includes at least one keyword. Matching the video content metadata to advertising content metadata includes comparing the at least one keyword of the video content metadata to the at least one keyword of the advertising content metadata.
摘要翻译：根据实施例，将视频内容与广告内容相匹配的方法包括从内容提供商电子地接收视频内容元数据，并且将视频内容元数据与全球广告列表的广告内容元数据相匹配。视频内容元数据对应于被发送到用户设备的视频内容，并且包括至少一个关键字。此外，广告内容元数据对应于广告内容，并且包括至少一个关键字。将视频内容元数据与广告内容元数据相匹配包括将视频内容元数据的至少一个关键字与广告内容元数据的至少一个关键字进行比较。

88. 发明授权

US07934088B2 Method of secure communication between endpoints 有权
标题翻译：端点之间安全通信的方法
公开(公告)号：US07934088B2
公开(公告)日：2011-04-26
申请号：US11587562
申请日：2005-03-31
申请人： Qi Wang
发明人： Qi Wang
IPC分类号： H04L29/06 , H04L9/32 , H04L9/00 , G06F7/04 , G06Q20/00
CPC分类号： H04L63/0428 , G06Q20/027 , H04L9/0844 , H04L63/06 , H04L63/08 , H04L2463/062
摘要： The method of secure communication between the endpoints is used for the secret communication between endpoints locating in different gatekeeper management area, and the method includes: in the process of the caller endpoint calling the callee endpoint, the home gatekeeper of the callee endpoint generates the share secret key between the caller endpoint and the callee endpoint; the secure communication process is performed between the caller endpoint and the callee endpoint according to the share secret key. According to the secure communication method between the endpoints, the invention makes that secret communication mechanism between the endpoints locating the different gatekeeper management area has better expansibility and higher efficiency.
摘要翻译：端点之间的安全通信方法用于定位在不同网守管理区域的端点之间的秘密通信，该方法包括：在主叫端点呼叫被叫端点的过程中，被叫方端点的归属网守产生共享主叫端点和被叫终端之间的秘密密钥; 根据共享秘密密钥在呼叫者端点和被叫方端点之间执行安全通信处理。根据端点之间的安全通信方式，本发明使定位不同网守管理区域的端点之间的秘密通信机制具有更好的可扩展性和更高的效率。

89. 发明申请

US20100298146A1 S-ADENOSYLMETHIONINE SYNTHETASE EXPRESSION ELEMENTS IDENTIFIED FROM ARABIDOPSIS THALIANA 有权
标题翻译：从ARABIDOPSIS THALIANA鉴定的S-腺嘧啶合成酶表达元件
公开(公告)号：US20100298146A1
公开(公告)日：2010-11-25
申请号：US12781663
申请日：2010-05-17
申请人： Wei Wu , Kim Beazley , Jill Deikman , Michael Edgerton , Bei Zhang , Qi Wang , Michael Petersen
发明人： Wei Wu , Kim Beazley , Jill Deikman , Michael Edgerton , Bei Zhang , Qi Wang , Michael Petersen
IPC分类号： A01N57/18 , A01H5/00 , C07H21/04 , C12N15/82 , C12N5/10
CPC分类号： C12N15/8216 , A01H5/00 , C12N9/1085 , C12N15/8289 , C12Y205/01006
摘要： The present invention provides non-coding regulatory element polynucleotide molecules isolated from the S-adenosyl methionine synthetase (SAMS3) gene of Arabidopsis thaliana and useful for expressing transgenes in plants. The invention further discloses compositions, polynucleotide constructs, transformed host cells, transgenic plants and seeds containing the Arabidopsis thaliana regulatory polynucleotide sequences, and methods for preparing and using the same.
摘要翻译：本发明提供从拟南芥的S-腺苷甲硫氨酸合成酶（SAMS3）基因中分离的非编码调控元件多核苷酸分子，并且可用于在植物中表达转基因。本发明还公开了组合物，多核苷酸构建体，转化的宿主细胞，转基因植物和含有拟南芥调节多核苷酸序列的种子，以及制备和使用拟南芥调节多核苷酸序列的方法。

90. 发明授权

US07813389B2 Generating laser pulses of prescribed pulse shapes programmed through combination of separate electrical and optical modulators 有权
标题翻译：通过单独的电和光调制器的组合产生规定脉冲形状的激光脉冲
公开(公告)号：US07813389B2
公开(公告)日：2010-10-12
申请号：US12268203
申请日：2008-11-10
申请人： Xiaoyuan Peng , David Barsic , William J. Jordens , Qi Wang
发明人： Xiaoyuan Peng , David Barsic , William J. Jordens , Qi Wang
IPC分类号： H01S3/30 , H01S3/10 , H01S3/13
CPC分类号： H01S3/06754 , H01S3/2316 , H01S3/2383 , H01S5/005 , H01S5/0092 , H01S5/0428 , H01S5/12
摘要： A programmable laser pulse combines electrical modulation of the pulse frequency and optical modulation of the pulse shape to form laser pulses of prescribed pulse shapes. A prescribed pulse shape features high peak power and low average power. The laser system disclosed also allows for power-scaling and nonlinear conversions to other (shorter or longer) wavelengths. The system provides an economical reliable alternative to using a laser source with high repetition rates to achieve shaped pulses at a variety of wavelengths. The combinatorial scheme disclosed is inherently more efficient than existing subtractive methods.
摘要翻译：可编程激光脉冲组合脉冲频率的电调制和脉冲形状的光调制形成规定脉冲形状的激光脉冲。规定的脉冲形状具有高峰值功率和低平均功率。所公开的激光系统还允许对其它（更短或更长）波长进行功率缩放和非线性转换。该系统提供了使用具有高重复率的激光源实现各种波长的成形脉冲的经济可靠的替代方案。所公开的组合方案固有地比现有的减法方法更有效。

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