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81. 发明申请

US20070064337A1 Storage apparatus, storage apparatus control method, and computer product 失效
标题翻译：存储装置，存储装置控制方法和计算机产品
公开(公告)号：US20070064337A1
公开(公告)日：2007-03-22
申请号：US11322025
申请日：2005-12-29
申请人： Takahiro Aoki , Shunji Saitou , Takao Abe
发明人： Takahiro Aoki , Shunji Saitou , Takao Abe
IPC分类号： G11B5/596
CPC分类号： G11B7/08505 , G11B5/5547
摘要： A seek-information storing unit stores seek information including a correlation between a seek distance indicating a shift distance from a current track to a target track where a target frame for a data input/out is located and a seek time indicating a shifting time that takes for a head to shift from the current track to the target track, based on an actual measurement. A head-shift control unit controls a shift of the head based on an estimated time obtained by adding a rotational delay time that takes until the target frame arrives at the head position after the head arrives at the target track to the seek time acquired from the seek information.
摘要翻译：搜索信息存储单元存储包括指示从当前轨道到目标轨道的移动距离的寻找距离与用于数据输入/输出的目标帧所在的目标轨迹之间的相关性的寻道信息，以及指示采取的移动时间的寻道时间根据实际测量，使头从当前轨道转移到目标轨道。头移动控制单元基于通过将头到达目标轨迹之后的目标帧到达头部位置的旋转延迟时间与从寻求信息。

82. 发明申请

US20060191481A1 Apparatus for the formation of a metal film 审中-公开
标题翻译：用于形成金属膜的装置
公开(公告)号：US20060191481A1
公开(公告)日：2006-08-31
申请号：US11391241
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.
摘要翻译：一种用于形成金属膜的装置，包括用于容纳基底的反应容器，用于使载气鼓泡通过液体有机金属络合物的前体进料装置，汽化有机金属配合物，从蒸发的有机金属络合物制备前体，以及将前体旋转磁场发生器，用于在衬底上方的空间中产生旋转磁场;以及第二等离子体发生器，用于从进料到反应容器中的还原气体产生等离子体。

83. 发明申请

US20060191477A1 Apparatus for the formation of a metal film 审中-公开
标题翻译：用于形成金属膜的装置
公开(公告)号：US20060191477A1
公开(公告)日：2006-08-31
申请号：US11391251
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas feed pipe, having a raw material gas flow passage whose inner surface is made of copper, and equipped with a heating element, an atomic reducing gas producing device for producing an atomic reducing gas within the reaction vessel, at least in the neighborhood of the substrate to be treated, and an evacuation device for evacuating any gas from the reaction vessel and the raw material gas flow passage.
摘要翻译：一种用于形成金属膜的装置，包括其中放置待处理基板的反应容器，插入入口容器中用于供给氯或氯化氢的原料气体进料管，附接到待处理基材的内端的螺旋管原料气体供给管，其内表面由铜制成的原料气体流路，配置有加热元件，至少在邻近区域内配置有用于在反应容器内制造原子还原气体的原子生成气体生成装置以及用于从反应容器和原料气体流路中排出任何气体的排气装置。

84. 发明申请

US20060177583A1 Method for the formation of a metal film 审中-公开
标题翻译：形成金属膜的方法
公开(公告)号：US20060177583A1
公开(公告)日：2006-08-10
申请号：US11391242
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00 , B44C1/22
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.
摘要翻译：一种形成金属膜的方法，包括使含有卤素的原料气体与热金属细丝接触，由此用原料气体蚀刻细丝，以制造由长丝中包含的金属成分构成的前体和卤素包含在原料气体中，通过将还原气体加热至高温来制造原子还原气体，使前体通过原子还原气体从前体除去卤素，并将得到的金属离子或中性金属导向基板以在基板上形成薄金属膜。

85. 发明授权

US06620505B1 Poly(trimethylene terephthalate) modified cross-section yarn 失效
标题翻译：聚（对苯二甲酸丙二醇酯）改性横截面纱
公开(公告)号：US06620505B1
公开(公告)日：2003-09-16
申请号：US10069373
申请日：2002-02-25
申请人： Takao Abe , Yoichiro Azuma , Tadashi Koyanagi
发明人： Takao Abe , Yoichiro Azuma , Tadashi Koyanagi
IPC分类号： D01F600
CPC分类号： D01F6/62 , D01D5/253 , Y10T428/2913 , Y10T428/2969 , Y10T428/2973
摘要： The present invention is to provide a polytrimethylene terephthalate fiber having a trilobal type modified cross-section, composed of 95 mol % or more of trimethylene terephthalate repeating units and 5 mol % or less of other ester repeating units to have an intrinsic viscosity in a range from 0.7 to 1.3 (dl/g), wherein the outer periphery of the trilobal type cross-section consists of outwardly convex sections or of outwardly convex section and straight sections. According to the inventive method, it is possible to produce the above-mentioned fiber of the modified cross-section in an industrially stable manner while minimizing the adhesion of polymer scum to the spinning orifice or the contamination thereof to suppress the generation of fluff or yarn breakage.
摘要翻译：本发明提供一种具有三叶形改性截面的聚对苯二甲酸丙二醇酯纤维，其组成为95摩尔％以上的三亚甲基对苯二甲酸酯重复单元和5摩尔％以下的其它酯重复单元，其特性粘度在一定范围内从0.7到1.3（dl / g），其中三叶形横截面的外周由向外的凸部或向外凸的部分和直的部分组成。根据本发明的方法，可以以工业上稳定的方式制造上述改性截面的纤维，同时最小化聚合物浮渣对纺丝孔的粘附或其污染，以抑制绒毛或纱线的产生破损。

86. 发明授权

US06544656B1 Production method for silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US06544656B1
公开(公告)日：2003-04-08
申请号：US09674841
申请日：2000-11-07
申请人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
发明人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T428/21
摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.
摘要翻译：通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片，晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

87. 发明授权

US06473822B1 Digital signal processing apparatus 有权
标题翻译：数字信号处理装置
公开(公告)号：US06473822B1
公开(公告)日：2002-10-29
申请号：US09309433
申请日：1999-05-11
申请人： Akira Nakamatsu , Takao Abe , Nobuo Nakamura
发明人： Akira Nakamatsu , Takao Abe , Nobuo Nakamura
IPC分类号： G06F1300
CPC分类号： H04N21/4143 , H04N7/24
摘要： A digital signal processing apparatus for processing a plurality of video signals and a plurality of audio signals is provided, and comprises a computer comprising a system bus and a main CPU connected to the system bus and an extension processor comprising a plurality of signal processing circuits for processing the plurality of video signals and/or the plurality of audio signals, and a local CPU for controlling the plurality of signal processing circuits so as to allow for the processing of the video signals and audio signals in real time. The extension processor further comprises an extension system bus extended from the system bus, a digital audio video (DAV) bus for transmitting the plurality of video signals and the plurality of audio signals between the plurality of signal processing circuits and a local CPU bus for transmitting control signals outputted from the local CPU. Each processing circuit has a common interface which is capable of being connected to the extension system bus, the DAV bus and the local CPU bus in any position, thereby allowing for the processing of the video signals and audio signals regardless of the mounting positions of the processing circuits.
摘要翻译：提供了一种用于处理多个视频信号和多个音频信号的数字信号处理装置，包括一个计算机，该计算机包括连接到系统总线的系统总线和主CPU，以及一个扩展处理器，包括多个信号处理电路，处理多个视频信号和/或多个音频信号;以及本地CPU，用于控制多个信号处理电路，以便实时地处理视频信号和音频信号。扩展处理器还包括从系统总线延伸的扩展系统总线，用于在多个信号处理电路之间传输多个视频信号和多个音频信号的数字音频视频（DAV）总线和用于发送的本地CPU总线从本地CPU输出的控制信号。每个处理电路具有能够连接到扩展系统总线，DAV总线和本地CPU总线在任何位置的公共接口，从而允许对视频信号和音频信号的处理，而不管安装位置如何处理电路。

88. 发明授权

US06333279B1 Method for producing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的制造方法
公开(公告)号：US06333279B1
公开(公告)日：2001-12-25
申请号：US09600819
申请日：2000-07-24
申请人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
发明人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
IPC分类号： H01L2100
CPC分类号： H01L21/02008 , C30B29/06 , C30B33/00 , H01L21/322
摘要： The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.
摘要翻译：本发明提供了一种制造硅晶片的方法，其特征在于，对晶片的至少一个表面进行多步抛光工艺，其中在氢和氩的混合气体气氛中通过使用快速加热/快速冷却装置代替多步抛光工艺中的最终抛光，以及通过该方法制造的硅晶片。由此，可以提供高生产率的硅晶片，其中在晶片表面上既不存在机械损伤也不刮伤，表面粗糙度显着提高，并且不存在滑移位错。

89. 发明授权

US5911822A Method of manufacturing silicon monocrystal, and seed crystal used in the method 失效
标题翻译：制造硅单晶的方法和用于该方法的晶种
公开(公告)号：US5911822A
公开(公告)日：1999-06-15
申请号：US7614
申请日：1998-01-15
申请人： Takao Abe , Masanori Kimura
发明人： Takao Abe , Masanori Kimura
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208 , C30B15/32
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/911
摘要： In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the size of the tip portion increases to a desired value. Subsequently, the seed crystal is slowly pulled upwardly in order to grow a silicon monocrystalline ingot having a desired diameter without performing necking operation. This method enables a heavy silicon monocrystal to be pulled quite simply without performance of necking operation, while eliminating the necessity of using a complicated apparatus such as a crystal holding mechanism.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，使用尖端具有尖锐形状或截短的晶种。晶种的尖端与硅熔体轻轻地接触，然后以低速将晶种降低，以熔化晶种的末端部分，直到尖端部分的尺寸增加到所需值。随后，将晶种向上缓慢地向上拉，以便生长具有期望直径的硅单晶锭，而不进行颈缩操作。这种方法使得重硅单晶可以非常简单地拉伸而不进行颈缩操作，而不需要使用诸如晶体保持机构的复杂装置。

90. 发明授权

US5886172A Carbapenem-3-carboxylic acid ester derivatives 失效
标题翻译：碳青霉烯-3-羧酸酯衍生物
公开(公告)号：US5886172A
公开(公告)日：1999-03-23
申请号：US875131
申请日：1997-07-17
申请人： Takao Abe , Toshio Kumagai
发明人： Takao Abe , Toshio Kumagai
IPC分类号： C07D477/00 , A61K31/397 , A61K31/425 , A61P31/04 , C07D477/20 , A61K31/40
CPC分类号： C07D477/20
摘要： Disclosed are carbapenem-3-carboxylic acid ester derivatives of formula (I), wherein R.sup.1 is a hydrogen atom or a lower alkyl group, R.sup.2 is an alkyl group which may be substituted by a cycloalkyl group having about 4 to 7 carbon atoms and which may be substituted by a lower alkyl group, or is a cycloalkyl group having 4 to 7 carbon atoms which may be substituted by a lower alkyl group and n is 0 or 1. The compounds are highly absorbable through the digestive tract and are rapidly converted in the body to the active compound, which shows strong antibacterial activity. ##STR1##
摘要翻译： PCT No.PCT / JP96 / 03540 Sec。 371日期1997年7月17日 102（e）日期1997年7月17日PCT提交1996年12月4日PCT公布。出版物WO97 / 21712 PCT 日期：1997年6月19日公开是式（I）的碳青霉烯-3-羧酸酯衍生物，其中R 1是氢原子或低级烷基，R 2是可以被具有约4〜 7个碳原子，并且可以被低级烷基取代，或者是可以被低级烷基取代的具有4至7个碳原子的环烷基，n是0或1.该化合物通过消化道高度可吸收并迅速转化为活性化合物，具有很强的抗菌活性。（一）

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