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1. 发明授权

US06544656B1 Production method for silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US06544656B1
公开(公告)日：2003-04-08
申请号：US09674841
申请日：2000-11-07
申请人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
发明人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T428/21
摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.
摘要翻译：通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片，晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

2. 发明授权

US06538285B2 Silicon wafer 有权
公开(公告)号：US06538285B2
公开(公告)日：2003-03-25
申请号：US09983205
申请日：2001-10-23
申请人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
发明人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
IPC分类号： H01L2701
CPC分类号： H01L21/02008 , C30B29/06 , C30B33/00 , H01L21/322
摘要： The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.

3. 发明授权

US06333279B1 Method for producing silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的制造方法
公开(公告)号：US06333279B1
公开(公告)日：2001-12-25
申请号：US09600819
申请日：2000-07-24
申请人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
发明人： Norihiro Kobayashi , Shoji Akiyama , Takao Abe
IPC分类号： H01L2100
CPC分类号： H01L21/02008 , C30B29/06 , C30B33/00 , H01L21/322
摘要： The present invention provides a method for producing a silicon wafer characterized in that at least one surface of the wafer is subjected to a multi-step polishing process, in which a heat treatment in a mixed gas atmosphere of hydrogen and argon through use of a rapid heating/rapid cooling apparatus is substituted for a final polishing in the multi-step polishing process, and a silicon wafer produced by the method. Thereby, there can be provided a silicon wafer in high productivity wherein there is neither mechanical damages nor scratches on the surface of the wafer, surface roughness is significantly improved, and there is no slip dislocation.
摘要翻译：本发明提供了一种制造硅晶片的方法，其特征在于，对晶片的至少一个表面进行多步抛光工艺，其中在氢和氩的混合气体气氛中通过使用快速加热/快速冷却装置代替多步抛光工艺中的最终抛光，以及通过该方法制造的硅晶片。由此，可以提供高生产率的硅晶片，其中在晶片表面上既不存在机械损伤也不刮伤，表面粗糙度显着提高，并且不存在滑移位错。

4. 发明授权

US09610750B2 Composite structure and manufacturing method therefor 有权
公开(公告)号：US09610750B2
公开(公告)日：2017-04-04
申请号：US14131730
申请日：2012-06-15
申请人： Tomomi Yukumoto , Takeshi Yamasaki , Shoji Akiyama , Yuji Akiyama
发明人： Tomomi Yukumoto , Takeshi Yamasaki , Shoji Akiyama , Yuji Akiyama
IPC分类号： B32B3/26 , B32B3/20 , B32B3/30 , B32B27/08 , B32B3/08 , B01L3/00 , G01N21/51
CPC分类号： B32B3/30 , B01L3/502707 , B01L3/502715 , B01L2200/0636 , B01L2200/0689 , B01L2200/12 , B01L2300/0645 , B01L2300/0654 , B01L2300/0816 , B01L2300/0838 , B01L2300/0877 , B01L2300/0887 , B32B3/08 , B32B3/266 , B32B27/08 , B32B2307/412 , G01N21/51 , G01N21/645 , G01N2021/513 , G01N2021/6482 , G01N2201/06113 , Y10T428/24612
摘要： There is provided a composite structure including: at least two substrates which are made of thermoplastic resin and which are bonded by thermocompression; and at least one member which is made of a material whose heat distortion temperature is higher than a heat distortion temperature of the thermoplastic resin and which is inserted into a space formed in at least one of the substrates. The member inserted in the space is fixed and held by wall surfaces which form the space of the substrates and which are thermally deformed by thermocompression.

5. 发明申请

US20140308800A1 METHOD FOR MANUFACTURING COMPOSITE WAFERS 有权
标题翻译：制造复合波导的方法
公开(公告)号：US20140308800A1
公开(公告)日：2014-10-16
申请号：US14343515
申请日：2012-09-14
申请人： Shoji Akiyama , Kazutoshi Nagata
发明人： Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02002 , H01L21/2007 , H01L21/2011 , H01L21/76243 , H01L21/76251
摘要： This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.
摘要翻译：本发明提供一种制造复合晶片的方法，其中可以从一个施主晶片获得至少两个复合晶片，并且其中可以省略倒角步骤。提供了一种用于制造复合晶片的方法，包括：将至少两个手柄晶片的接合表面和施主晶片的表面直接大于或等于至少两个手柄晶片的直径之和，并且具有氢通过从施主晶片的表面注入氢离子形成在其内部的离子注入层，以获得接合晶片; 将粘合晶片在200℃加热至400℃; 以及沿加热的接合晶片的氢离子注入层从施主晶片分离膜，以获得具有转移到至少两个处理晶片上的膜的复合晶片。

6. 外观设计

USD704580S1 Micro flow channel chip for flow cytometer 有权
标题翻译：用于流式细胞仪的微流通芯片
公开(公告)号：USD704580S1
公开(公告)日：2014-05-13
申请号：US29421304
申请日：2012-06-29
申请人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki
设计人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki

7. 发明申请

US20130003036A1 PHOTO MASK UNIT COMPRISING A PHOTOMASK AND A PELLICLE AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包含光电照相机和胶囊的照片遮罩单元及其制造方法
公开(公告)号：US20130003036A1
公开(公告)日：2013-01-03
申请号：US13608716
申请日：2012-09-10
申请人： Shoji Akiyama , Yoshihiro Kubota
发明人： Shoji Akiyama , Yoshihiro Kubota
IPC分类号： G03B27/58 , B23P11/00
CPC分类号： G03F1/24 , G03F1/62 , G03F1/64 , Y10T29/49826
摘要： It is an object of the present invention to provide a photomask unit suitable for forming a microscopic pattern of 32 nm or smaller on a photoresist film using the EUV exposure technique and being able to reliably prevent the flatness of a photomask from being lowered. The photomask unit 1 according to the present invention includes a pellicle membrane 6, a pellicle frame 7 onto one surface of which a region of the pellicle membrane 6 in the vicinity of side portions of the pellicle membrane 6 is fixed, a photomask 2 and a stage 3 onto one surface of which the photomask 2 and the pellicle frame 7 are fixed, and the pellicle frame 7 is fixed onto the stage 3 at a region outside of a region of the stage 3 onto which the photomask 2 is fixed.
摘要翻译：本发明的目的是提供一种适用于使用EUV曝光技术在光致抗蚀剂膜上形成32nm或更小的微观图案并能够可靠地防止光掩模的平坦度降低的光掩模单元。根据本发明的光掩模单元1包括防护薄膜6，防护薄膜框架7，其一个表面上防护薄膜6的侧部附近的防护薄膜6的区域被固定，光掩模2和阶段3在其一个表面上固定光掩模2和防护薄膜组件框架7，并且防护膜框架7在固定有光掩模2的载物台3的区域外部的区域固定到载物台3上。

8. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

9. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

10. 发明授权

US07993818B2 Optical disk manufacturing method 失效
标题翻译：光盘制造方法
公开(公告)号：US07993818B2
公开(公告)日：2011-08-09
申请号：US11613062
申请日：2006-12-19
申请人： Hidetoshi Watanabe , Shoji Akiyama
发明人： Hidetoshi Watanabe , Shoji Akiyama
IPC分类号： B29D17/00
CPC分类号： B29D17/005 , G11B7/24038 , G11B7/26
摘要： A method for manufacturing an optical disk having a middle layer on a substrate includes the steps of coating an ultraviolet curing resin over the substrate, irradiating ultraviolet rays to the ultraviolet curing resin and prepolymerizing the ultraviolet curing resin, and forming the middle layer by pressing a stamper against the prepolymerized ultraviolet curing resin, irradiating ultraviolet rays to the ultraviolet curing resin and thus curing the ultraviolet curing resin.
摘要翻译：一种在基板上具有中间层的光盘的制造方法，其特征在于，在基板上涂布紫外线固化树脂，向紫外线固化树脂照射紫外线，使紫外线固化树脂预聚合，通过按压压制预聚合的紫外线固化树脂，向紫外线固化树脂照射紫外线，从而固化紫外线固化树脂。

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