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1. 发明授权

US06656540B2 Method for forming metallic film and apparatus for forming the same 有权
公开(公告)号：US06656540B2
公开(公告)日：2003-12-02
申请号：US09926624
申请日：2001-11-27
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C1608
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, the present invention relates to a method for the formation of a thin metal film which comprises the steps of feeding a chlorine-containing raw material gas 55 into an inlet vessel 11 having a perforated plate 12 made of Cu; converting the raw material gas 55 into a plasma; etching the perforated plate 12 with the raw material gas plasma to produce a precursor 13 composed of the Cu component contained in the perforated plate 12 and the chlorine contained in the raw material gas 55; converting hydrogen gas into a plasma; after discharging the precursor 13 from the inlet vessel 11, passing the precursor 13 through a rotating magnetic field so as to cause the precursor 13 to travel toward a substrate 15 in an accelerated manner; and passing the precursor 13 through the reducing gas plasma to remove chlorine from the precursor 13 and directing the resulting Cu ions onto the substrate 15 to form a thin Cu film 62 on the substrate 15, as well as an apparatus for carrying out this method.

2. 发明申请

US20060191481A1 Apparatus for the formation of a metal film 审中-公开
标题翻译：用于形成金属膜的装置
公开(公告)号：US20060191481A1
公开(公告)日：2006-08-31
申请号：US11391241
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.
摘要翻译：一种用于形成金属膜的装置，包括用于容纳基底的反应容器，用于使载气鼓泡通过液体有机金属络合物的前体进料装置，汽化有机金属配合物，从蒸发的有机金属络合物制备前体，以及将前体旋转磁场发生器，用于在衬底上方的空间中产生旋转磁场;以及第二等离子体发生器，用于从进料到反应容器中的还原气体产生等离子体。

3. 发明申请

US20060191477A1 Apparatus for the formation of a metal film 审中-公开
标题翻译：用于形成金属膜的装置
公开(公告)号：US20060191477A1
公开(公告)日：2006-08-31
申请号：US11391251
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas feed pipe, having a raw material gas flow passage whose inner surface is made of copper, and equipped with a heating element, an atomic reducing gas producing device for producing an atomic reducing gas within the reaction vessel, at least in the neighborhood of the substrate to be treated, and an evacuation device for evacuating any gas from the reaction vessel and the raw material gas flow passage.
摘要翻译：一种用于形成金属膜的装置，包括其中放置待处理基板的反应容器，插入入口容器中用于供给氯或氯化氢的原料气体进料管，附接到待处理基材的内端的螺旋管原料气体供给管，其内表面由铜制成的原料气体流路，配置有加热元件，至少在邻近区域内配置有用于在反应容器内制造原子还原气体的原子生成气体生成装置以及用于从反应容器和原料气体流路中排出任何气体的排气装置。

4. 发明申请

US20060177583A1 Method for the formation of a metal film 审中-公开
标题翻译：形成金属膜的方法
公开(公告)号：US20060177583A1
公开(公告)日：2006-08-10
申请号：US11391242
申请日：2006-03-29
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C16/00 , B44C1/22
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.
摘要翻译：一种形成金属膜的方法，包括使含有卤素的原料气体与热金属细丝接触，由此用原料气体蚀刻细丝，以制造由长丝中包含的金属成分构成的前体和卤素包含在原料气体中，通过将还原气体加热至高温来制造原子还原气体，使前体通过原子还原气体从前体除去卤素，并将得到的金属离子或中性金属导向基板以在基板上形成薄金属膜。

5. 发明授权

US08481848B2 Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US08481848B2
公开(公告)日：2013-07-09
申请号：US12670557
申请日：2009-01-07
申请人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
发明人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/02366 , H01L31/077 , H01L31/18 , Y02E10/50
摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.
摘要翻译：提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。

6. 发明申请

US20120012168A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20120012168A1
公开(公告)日：2012-01-19
申请号：US13055131
申请日：2009-01-07
申请人： Saneyuki Goya , Yasuyuki Kobayashi , Satoshi Sakai
发明人： Saneyuki Goya , Yasuyuki Kobayashi , Satoshi Sakai
IPC分类号： H01L31/06
CPC分类号： H01L31/1812 , H01L31/046 , H01L31/076 , Y02E10/548
摘要： A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.
摘要翻译：适用于获得高转换效率的三结光伏器件的膜厚结构。光电器件在衬底的顶部上包括透明电极层，包含具有针状接合部的三个层叠电池层的光电转换层和背面电极层，其中设置在光入射侧的入射部电池层具有非晶形具有不小于100nm且不大于200nm的厚度的硅i层，设置在与光入射侧相反的一侧的底部单元层具有不具有厚度的晶体硅 - 锗i层小于700nm且不超过1600nm，并且锗原子相对于晶体硅锗锗层内的锗原子和硅原子之和的比例不小于15原子％且不超过25原子％并且设置在入射部分单元层和底部单元层之间的中间单元层具有厚度不小于1000nm且不大于2,000nm的晶体硅i层。

7. 发明申请

US20100206373A1 PHOTOVOLTAIC DEVICE 失效
标题翻译：光电器件
公开(公告)号：US20100206373A1
公开(公告)日：2010-08-19
申请号：US12670557
申请日：2009-01-07
申请人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
发明人： Saneyuki Goya , Eishiro Sasakawa , Hiroshi Mashima , Satoshi Sakai
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/02366 , H01L31/077 , H01L31/18 , Y02E10/50
摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.
摘要翻译：提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。此外，其中形成有光电转换层3的基板1的表面的尺寸为至少1μm见方的光电器件100，其中晶体硅i层42具有表面的基板面内分布通过不小于5且不大于8的拉曼峰比的平均值，不小于1且不大于3的拉曼峰比的标准偏差，以及拉曼峰值比的拉曼峰值比不大于4，不小于0％且不大于10％。

8. 发明授权

US08859887B2 Photovoltaic device and process for producing photovoltaic device 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US08859887B2
公开(公告)日：2014-10-14
申请号：US12997418
申请日：2009-07-08
申请人： Shigenori Tsuruga , Kengo Yamaguchi , Saneyuki Goya , Satoshi Sakai
发明人： Shigenori Tsuruga , Kengo Yamaguchi , Saneyuki Goya , Satoshi Sakai
IPC分类号： H01L31/105 , H01L31/18 , H01L27/142 , H01L31/076 , H01L31/077
CPC分类号： H01L27/1423 , H01L31/046 , H01L31/0463 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.
摘要翻译：由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。

9. 发明申请

US20120135561A1 PHOTOELECTRIC-CONVERSION-DEVICE FABRICATION METHOD 失效
标题翻译：光电转换器制造方法
公开(公告)号：US20120135561A1
公开(公告)日：2012-05-31
申请号：US13388297
申请日：2010-05-07
申请人： Hiroomi Miyahara , Saneyuki Goya , Satoshi Sakai , Tatsuyuki Nishimiya
发明人： Hiroomi Miyahara , Saneyuki Goya , Satoshi Sakai , Tatsuyuki Nishimiya
IPC分类号： H01L31/18
CPC分类号： C23C16/24 , C23C16/4402 , H01L31/022466 , H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.
摘要翻译：目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。公开了一种光电转换装置的制造方法，其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层，使其具有等于或小于确定的杂质浓度的上限的值。或者，根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限，同时在控制杂质 - 气体浓度的同时形成i层，使其具有相等的值达到或小于确定的上限。

10. 发明申请

US20070221269A1 Photovoltaic conversion cell, photovoltaic conversion module, photovoltaic conversion panel, and photovoltaic conversion system 审中-公开
标题翻译：光伏转换电池，光伏转换模块，光伏转换面板和光伏转换系统
公开(公告)号：US20070221269A1
公开(公告)日：2007-09-27
申请号：US11585073
申请日：2006-10-24
申请人： Satoshi Sakai , Yasuyuki Kobayashi , Saneyuki Goya , Youji Nakano
发明人： Satoshi Sakai , Yasuyuki Kobayashi , Saneyuki Goya , Youji Nakano
IPC分类号： H01L31/00
CPC分类号： H01L31/056 , H01L31/0236 , Y02E10/52
摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.
摘要翻译：提高薄膜Si太阳能电池的效率。在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

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