专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20120221773A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20120221773A1
公开(公告)日：2012-08-30
申请号：US13404883
申请日：2012-02-24
申请人： Shinichi SHUTO , Takayuki Tamura , Noriyuki Kotani , Hiroyasu Tominaga
发明人： Shinichi SHUTO , Takayuki Tamura , Noriyuki Kotani , Hiroyasu Tominaga
IPC分类号： G06F12/00
CPC分类号： G06F11/1068 , G11C16/3431
摘要： The disclosed invention provides a technique for efficiently avoiding read disturbance. A nonvolatile semiconductor memory device includes a nonvolatile memory unit and a controller that can control refresh processing for rewriting data in a block of blocks assumed to be erasable units in the nonvolatile memory unit into anther block different from the block. The controller sets up a first area and a second area different from the first area in the nonvolatile memory unit and, each time a refresh trigger occurs, executes refresh processing for the first area and the second area, such that a refresh frequency of data in the first area will become higher than a refresh frequency of data in the second area. Thereby, it is possible to efficiently avoid read disturbance when read access is repeated.
摘要翻译：所公开的发明提供了一种有效避免读取干扰的技术。非易失性半导体存储器件包括非易失性存储器单元和控制器，其可以控制刷新处理，以将在非易失性存储器单元中被假定为可擦除单元的块中的数据重写为与该块不同的另一块。所述控制器设置与所述非易失性存储器单元中的所述第一区域不同的第一区域和第二区域，并且每次刷新触发发生时，对所述第一区域和所述第二区域执行刷新处理，第一区域将变得高于第二区域中的数据刷新频率。因此，当重复读取访问时，可以有效地避免读取干扰。

82. 发明申请

US20110197108A1 MEMORY CARD AND MEMORY CONTROLLER 有权
标题翻译：内存卡和内存控制器
公开(公告)号：US20110197108A1
公开(公告)日：2011-08-11
申请号：US13089310
申请日：2011-04-18
申请人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota
发明人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota
IPC分类号： G06F11/08
CPC分类号： G11C29/76 , G06F11/1068 , G06F13/1673 , G11C5/04 , G11C29/72 , G11C2029/0409
摘要： A memory card has a plurality of non-volatile memories and a main controller for controlling the operation of the non-volatile memories. The main controller performs an access control to the non-volatile memories in response to an external access instruction, and an alternate control for alternating an access error-related storage area of the non-volatile memory with other storage area. In the access control, the speeding up of the data transfer between flash memories is achieved by causing the plurality of non-volatile memories to parallel access operate. In the alternation control, the storage areas is made alternative for each non-volatile memory in which an access error occurs.
摘要翻译：存储卡具有多个非易失性存储器和用于控制非易失性存储器的操作的主控制器。主控制器响应于外部访问指令对非易失性存储器执行访问控制，以及用于将非易失性存储器的访问错误相关存储区域与其他存储区域交替的替代控制。在访问控制中，通过使多个非易失性存储器并行访问操作来实现闪速存储器之间的数据传输的加速。在交替控制中，对于发生访问错误的每个非易失性存储器，存储区域被替代。

83. 发明授权

US07872148B2 Cage-shaped cyclobutanoic dianhydrides and process for production thereof 有权
标题翻译：笼形环丁酸二酐及其生产方法
公开(公告)号：US07872148B2
公开(公告)日：2011-01-18
申请号：US11665024
申请日：2005-10-18
申请人： Hideo Suzuki , Takayuki Tamura
发明人： Hideo Suzuki , Takayuki Tamura
IPC分类号： C07D493/08
CPC分类号： C07C67/11 , C07C51/09 , C07C51/56 , C07C67/08 , C07C67/12 , C07C67/333 , C07C69/74 , C07C2601/04 , C07D493/04 , C07D493/08 , C07C61/04
摘要： A process which comprises reacting a 1,2,3,4-cyclobutanetetracarboxylic-1,2:3,4-dianhydride [1] with an alcohol [2] in the presence of an acid catalyst to obtain a compound [3], isomerizing the compound [3] with a base catalyst into a compound [4], reacting the compound [4] with an organic acid to obtain a compound [5], and reacting the compound [5] with a dehydrating agent to obtain a 1,2,3,4-cyclobutanetetracarboxylic-1,3:2,4-dianhydride: wherein R1 and R2 are each independently hydrogen, halogeno, alkyl of 1 to 10 carbon atoms, halogenated alkyl of 1 to 10 carbon atoms, cycloalkyl of 3 to 8 carbon atoms, phenyl, or cyano; and R3 is alkyl of 1 to 10 carbon atoms.
摘要翻译：一种方法包括在酸催化剂存在下使1,2,3,4-环丁烷四羧酸-1,2：3,4-二酐[1]与醇[2]反应，得到化合物[3]，异构化化合物[3]与碱催化剂合成化合物[4]，使化合物[4]与有机酸反应，得到化合物[5]，并使化合物[5]与脱水剂反应，得到1， 2,3,4-环丁烷四羧酸-1,3：2,4-二酐：其中R1和R2各自独立地为氢，卤代，1-10个碳原子的烷基，1-10个碳原子的卤代烷基，3〜 8个碳原子，苯基或氰基; 并且R 3是1至10个碳原子的烷基。

84. 发明申请

US20100130755A1 PROCESS FOR PRODUCTION OF COUMARIN DIMER COMPOUND 有权
标题翻译：生产欧司素二聚体化合物的方法
公开(公告)号：US20100130755A1
公开(公告)日：2010-05-27
申请号：US12451213
申请日：2008-04-28
申请人： Hideo Suzuki , Takayuki Tamura
发明人： Hideo Suzuki , Takayuki Tamura
IPC分类号： C07D493/04
CPC分类号： C07D493/04
摘要： There is provided a one-step process for producing a dihydroxy-substituted coumarin dimer compound by a photodimerization reaction of a hydroxy-substituted coumarin compound. The process comprises subjecting a hydroxy-substituted coumarin compound to a photodimerization reaction in a solvent selected from aliphatic ketones having 3 to 10 carbon atoms, aliphatic carboxylic acid esters having 2 to 10 carbon atoms, aliphatic alcohols having 1 to 10 carbon atoms, aliphatic nitriles having 2 to 10 carbon atoms, ethers having 4 to 10 carbon atoms, amides having 3 to 10 carbon atoms, and a mixture thereof to obtain a dihydroxy-substituted coumarin dimer compound.
摘要翻译：提供了通过羟基取代的香豆素化合物的光二聚反应制备二羟基取代的香豆素二聚体化合物的一步法。该方法包括使羟基取代的香豆素化合物在选自具有3至10个碳原子的脂族酮，2至10个碳原子的脂肪族羧酸酯，1至10个碳原子的脂族醇，脂族醇，脂族腈具有2至10个碳原子，具有4至10个碳原子的醚，具有3至10个碳原子的酰胺及其混合物，以获得二羟基取代的香豆素二聚体化合物。

85. 发明申请

US20100021584A1 PROCESS FOR PRODUCING FRUIT WITH ENHANCED y-AMINOBUTYRIC ACID CONTENT 审中-公开
标题翻译：用于生产具有增强的γ-氨基丁酸含量的水果的方法
公开(公告)号：US20100021584A1
公开(公告)日：2010-01-28
申请号：US11992597
申请日：2006-09-27
申请人： Takayuki Tamura , Tetsuhiro Yamazaki , Yumiko Suzuki , Hideki Takase , Toshiyuki Ohkubo , Tomonori Konno
发明人： Takayuki Tamura , Tetsuhiro Yamazaki , Yumiko Suzuki , Hideki Takase , Toshiyuki Ohkubo , Tomonori Konno
IPC分类号： C12G1/00 , A23L2/02 , A23L2/52 , C12H1/00
CPC分类号： A23L2/02 , A23L19/00 , A23L33/10 , A23V2002/00 , C12G1/00 , C12G3/02 , A23V2250/038
摘要： The object of the present invention is to provide a method for manufacturing effectively fruit, fruit juice and alcoholic beverage containing a higher concentration of gamma-aminobutyric acid by a relatively simple operation. A fruit of increased gamma-aminobutyric acid content is manufactured by conducting once, or repeatedly conducting two or more times, an operation comprising anaerobic processing followed by aerobic processing of starting material fruit; and further anaerobically processing said fruit to obtain fruit of greater gamma-aminobutyric acid content than the starting material fruit. A fruit juice and an alcoholic beverage are manufactured with the fruit of increased gamma-aminobutyric acid content.
摘要翻译：本发明的目的是提供一种通过相对简单的操作有效制造含有较高浓度的γ-氨基丁酸的水果，果汁和酒精饮料的方法。通过进行一次或重复进行两次或更多次的包含厌氧处理，然后进行原料水果的需氧处理的操作，制造γ-氨基丁酸含量增加的果实; 进一步厌氧处理所述水果以获得比原料水果更大的γ-氨基丁酸含量的果实。制造果汁和酒精饮料，其具有增加的γ-氨基丁酸含量的果实。

86. 发明授权

US07334080B2 Nonvolatile memory with independent access capability to associated buffer 有权
标题翻译：非易失性存储器，具有对相关缓冲区的独立访问能力
公开(公告)号：US07334080B2
公开(公告)日：2008-02-19
申请号：US10510150
申请日：2002-11-15
申请人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
发明人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/0893 , G06F2212/2022 , G06F2212/7203 , G11C16/06 , G11C16/10 , G11C16/26 , G11C2216/22
摘要： A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside. Consequently, it is possible to reduce the overhead of a data transfer for reading/writing data from/to the non-volatile storage device.
摘要翻译：非易失性存储设备（1）具有非易失性存储单元（FARY 0至FARY 3），缓冲单元（BMRY 0至BMRY 3）和控制单元（CNT）），并且控制单元可以控制第一访问处理在外部和缓冲单元之间以及从外部分别接收到伪指令之后的非易失性存储单元和缓冲单元之间的第二访问处理。控制单元可以分别根据从外部发送的指令独立地对非易失性存储器单元和缓冲单元执行访问控制。因此，可以与非易失性存储器单元的擦除操作同时地将缓冲单元的下一个写入数据设置为缓冲单元，或者按照高速缓存存储器操作中的高速将高速存储信息一次性地输出到缓冲器单元指令从外面发出。因此，可以减少用于从/向非易失性存储装置读/写数据的数据传输的开销。

87. 发明授权

US07116578B2 Non-volatile memory device and data storing method 有权
公开(公告)号：US07116578B2
公开(公告)日：2006-10-03
申请号：US10796995
申请日：2004-03-11
申请人： Motoki Kanamori , Takayuki Tamura , Kenji Kozakai , Atsushi Shikata , Shinsuke Asari
发明人： Motoki Kanamori , Takayuki Tamura , Kenji Kozakai , Atsushi Shikata , Shinsuke Asari
IPC分类号： G11C14/00 , G11C16/04 , G11C7/10 , G11C8/00 , G06F13/00
CPC分类号： G11C16/10 , G11C2207/229
摘要： In a card storage device containing a non-volatile memory and a buffer memory, the buffer memory includes a plurality of banks. Data is transferred sequentially from a host CPU to the banks of the buffer memory, data is transferred to the non-volatile memory from a bank that becomes full, a write operation is started when one unit of data to be written into the non-volatile memory at a time has been transferred and, without waiting for the data to be written, the next write data is transferred from the host CPU to a bank from which write data has been transferred.

88. 发明授权

US07070113B2 Nonvolatile memory card 有权
标题翻译：非易失性存储卡
公开(公告)号：US07070113B2
公开(公告)日：2006-07-04
申请号：US10667663
申请日：2003-09-23
申请人： Atsushi Shiraishi , Takayuki Tamura , Chiaki Kumahara , Shinsuke Asari
发明人： Atsushi Shiraishi , Takayuki Tamura , Chiaki Kumahara , Shinsuke Asari
IPC分类号： G06K19/06
CPC分类号： G11C16/3418 , G06F12/0246 , G06F2212/1016 , G06F2212/1036 , G06F2212/7205 , G06F2212/7207 , G11C16/349
摘要： A nonvolatile memory has an erase table in which a free-space information flag is associated with each physical address of a memory area and an address translation table in which a physical address of a memory area is associated with each logical address. The free-space information flag indicates whether a corresponding memory area is permitted to be erased. A control circuit determines a memory area to which rewrite data is to be written by referring to the free-space information flag, reflects the physical address and the logical address of the memory area to which the data is written into the address translation table, and updates the free-space information flag. The memory area to which rewrite data is to be written is determined by referring to the free-space information flag, and rewriting is not performed in the same memory area.
摘要翻译：非易失性存储器具有擦除表，其中空闲信息标志与存储区域的每个物理地址相关联，以及地址转换表，其中存储区域的物理地址与每个逻辑地址相关联。自由空间信息标志指示相应的存储区域是否被允许被擦除。控制电路通过参考自由空间信息标志来确定要写入重写数据的存储器区域，将数据写入地址转换表的存储区域的物理地址和逻辑地址反映，更新可用空间信息标志。通过参考自由空间信息标志来确定要写入重写数据的存储区域，并且不在同一存储区域中进行重写。

89. 发明申请

US20050248999A1 Memory card and memory controller 失效
标题翻译：存储卡和存储控制器
公开(公告)号：US20050248999A1
公开(公告)日：2005-11-10
申请号：US11180538
申请日：2005-07-14
申请人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota , Yasuhiro Nakamura
发明人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota , Yasuhiro Nakamura
IPC分类号： G06F12/16 , G06F11/10 , G06K19/07 , G11C7/00 , G11C29/00 , H03M13/00
CPC分类号： G06F11/1068
摘要： A memory card includes a non-volatile memory, a memory controller for controlling the operation of the memory card. The memory controller is capable of providing an interface with outside according to a predetermined protocol, and performs error detection and correction of the memory information at regular time intervals or at the timing of connection of electric power supply, independently of reading out the memory information according to external access request. Therefore, it is possible to improve reliability of data retention in the non-volatile memory without the host device reading out the memory information from the non-volatile memory of the memory card.
摘要翻译：存储卡包括非易失性存储器，用于控制存储卡的操作的存储器控制器。存储器控制器能够根据预定协议向外部提供接口，并且以规定的时间间隔或在电力供应连接的定时执行存储器信息的错误检测和校正，而不依赖于根据到外部访问请求。因此，无需主机装置从存储卡的非易失性存储器中读出存储器信息，可以提高非易失性存储器中的数据保持的可靠性。

90. 发明申请

US20050228962A1 Non-volatile storage device 有权
标题翻译：非易失性存储设备
公开(公告)号：US20050228962A1
公开(公告)日：2005-10-13
申请号：US10510150
申请日：2002-11-15
申请人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
发明人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
IPC分类号： G06F12/00 , G06F12/02 , G06F12/08 , G06F13/00 , G11C16/06 , G11C16/10 , G11C16/26
CPC分类号： G06F12/0246 , G06F12/0893 , G06F2212/2022 , G06F2212/7203 , G11C16/06 , G11C16/10 , G11C16/26 , G11C2216/22
摘要： A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside. Consequently, it is possible to reduce the overhead of a data transfer for reading/writing data from/to the non-volatile storage device.
摘要翻译：非易失性存储设备（1）具有非易失性存储单元（FARY 0至FARY 3），缓冲单元（BMRY 0至BMRY 3）和控制单元（CNT）），并且控制单元可以控制第一访问处理在外部和缓冲单元之间以及从外部分别接收到伪指令之后的非易失性存储单元和缓冲单元之间的第二访问处理。控制单元可以分别根据从外部发送的指令独立地对非易失性存储器单元和缓冲单元执行访问控制。因此，可以与非易失性存储器单元的擦除操作同时地将缓冲单元的下一个写入数据设置为缓冲单元，或者按照高速缓存存储器操作中的高速将高速存储信息一次性地输出到缓冲器单元指令从外面发出。因此，可以减少用于从/向非易失性存储装置读/写数据的数据传输的开销。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式