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81. 发明授权

US07906823B2 MEMS apparatus and method of manufacturing the same 失效
标题翻译： MEMS装置及其制造方法
公开(公告)号：US07906823B2
公开(公告)日：2011-03-15
申请号：US12195587
申请日：2008-08-21
申请人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Michihiko Nishigaki , Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H01L29/84
CPC分类号： B81C1/00269 , B81C2203/0145
摘要： A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.
摘要翻译： MEMS器件包括形成在半导体衬底上的MEMS单元和设置有孔并用于密封MEMS单元的盖。孔用密封材料密封，形状为球形或半球形。

82. 发明授权

US07875481B2 Semiconductor apparatus and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07875481B2
公开(公告)日：2011-01-25
申请号：US12200177
申请日：2008-08-28
申请人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
发明人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H01L21/00
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译：即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

83. 发明授权

US07709999B2 Thin film piezoelectric resonator and method of manufacturing the same 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US07709999B2
公开(公告)日：2010-05-04
申请号：US10582229
申请日：2006-03-29
申请人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
发明人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
IPC分类号： H01L41/047
CPC分类号： H03H9/132 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/174 , Y10T29/42
摘要： A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
摘要翻译：薄膜压电谐振器包括具有空腔的基板; 在空腔上延伸的第一电极; 放置在第一电极上的压电薄膜; 以及放置在所述压电膜上的第二电极，所述第二电极具有在所述空腔上部分重叠的周边，并且具有锥形以具有由其周边的一部分及其底部限定的30度或更小的内角。

84. 发明授权

US07705611B2 Sensor device, and portable communication terminal and electronic device using the sensor device 失效
标题翻译：传感器装置，以及使用传感器装置的便携式通信终端和电子装置
公开(公告)号：US07705611B2
公开(公告)日：2010-04-27
申请号：US11858822
申请日：2007-09-20
申请人： Masako Ogata , Kazuhiro Suzuki , Hideyuki Funaki , Kazuhiko Itaya
发明人： Masako Ogata , Kazuhiro Suzuki , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： G01R27/26
CPC分类号： H03K17/955 , G01D5/2417 , H03K2217/960755
摘要： A sensor device for detecting a positional relationship between a first member and a second member, includes a first charge-holding electrode provided on a surface of the first member and holding a charge, a second charge-holding electrode provided on the surface of the first member and holding a charge differing from the charge held by the first charge-holding electrode, a first charge-induced electrode provided on a surface of the second member, the first charge-induced electrode having a charge induced therein in accordance with the charge held by the first charge-holding electrode, when the first charge-holding electrode approaches the first charge-induced electrode, a second charge-induced electrode provided on the surface of the second member, the second charge-induced electrode having a charge induced therein in accordance with the charge held by the second charge-holding electrode, when the second charge-holding electrode approaches the second charge-induced electrode.
摘要翻译：一种用于检测第一构件和第二构件之间的位置关系的传感器装置，包括设置在第一构件的表面上并保持电荷的第一电荷保持电极，设置在第一构件和第二构件的表面上的第二电荷保持电极并且保持与第一电荷保持电极所保持的电荷不同的电荷，设置在第二部件的表面上的第一电荷感应电极，第一电荷感应电极根据电荷保持在其中诱导电荷通过第一电荷保持电极，当第一电荷保持电极接近第一电荷感应电极时，设置在第二元件的表面上的第二电荷感应电极，其中在其中引入电荷的第二电荷感应电极根据第二电荷保持电极保持的电荷，当第二电荷保持电极接近第二电荷感应电极时。

85. 发明授权

US07525399B2 Thin-film piezoelectric resonator, filter and voltage-controlled oscillator 有权
标题翻译：薄膜压电谐振器，滤波器和压控振荡器
公开(公告)号：US07525399B2
公开(公告)日：2009-04-28
申请号：US11376266
申请日：2006-03-16
申请人： Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Ryoichi Ohara , Kazuhiko Itaya
发明人： Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Ryoichi Ohara , Kazuhiko Itaya
IPC分类号： H03H9/54 , H03H9/15
CPC分类号： H03H3/02 , H03H9/02125 , H03H9/02157 , H03H9/564 , H03H9/568 , H03H2003/023 , H03H2003/025
摘要： A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.
摘要翻译：薄膜压电谐振器包括基板以及第一和第二激励部分。衬底包括第一和第二腔。第一激励部分设置在第一腔上方，并且包括依次层压的第一电极，第一压电材料和第二电极。第一电极，第一压电材料和第二电极之间的重叠区域限定第一激励部分的周边的轮廓。第一距离被定义为从第一激励部分的端部到第一腔体的开口端的距离。第二激励部分设置在第二腔上，并且包括依次层压的第三电极，第二压电材料和第四电极。第二距离被定义为从第二激励部分的端部到第二腔体的开口端的距离，并且与第一距离不同。

86. 发明申请

US20070273018A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070273018A1
公开(公告)日：2007-11-29
申请号：US11678996
申请日：2007-02-26
申请人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
发明人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译：即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

87. 发明申请

US20070222540A1 ANTENNA SHARING DEVICE AND PORTABLE TELEPHONE 失效
标题翻译：天线共享设备和便携式电话
公开(公告)号：US20070222540A1
公开(公告)日：2007-09-27
申请号：US11689848
申请日：2007-03-22
申请人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
发明人： Michihiko Nishigaki , Ryoichi Ohara , Minoru Kawase , Kazuhiko Itaya
IPC分类号： H03H9/70
CPC分类号： H03H9/706 , H03H9/0571
摘要： An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.
摘要翻译：天线共享装置具有公共信号端子对，第一端子对，第二端子对，第一滤波器，第二滤波器，第一电感器元件，第二电感器元件，第三电感器元件。第二和第三电感元件分别具有多个电感器元件。包括在第二电感器元件中的电感器元件中最接近第一端子对的电感器元件和最靠近第三电感器元件中的第二端子对的电感器元件被布置成远离第一电感器元件，而不是包括在其中的其它电感器元件第二和第三电感器元件，或形成在不同于其上形成有第一电感器元件的衬底的衬底上，或者通过夹持屏蔽图案与第一电感器元件相对形成。

88. 发明申请

US20070196920A1 Method and device of metamorphosing cells, and treatment apparatus using the same 审中-公开
标题翻译：变形细胞的方法和装置，以及使用其的处理装置
公开(公告)号：US20070196920A1
公开(公告)日：2007-08-23
申请号：US11507674
申请日：2006-08-22
申请人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
发明人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
IPC分类号： C12N15/09 , C12N15/00 , C12M3/00
CPC分类号： A61N5/00 , A61N1/406 , A61N5/0601
摘要： A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.
摘要翻译：细胞变形装置包括用作隔膜并保持含有有害细胞和纳米级粒子的混合介质，AC电压源，加热器和电感器的微型盘。交流电压供给面与微型菜肴2具有空间，并向微型菜肴2施加偏压，使得纳米级颗粒被轰击到有害细胞上并将其破坏。

89. 发明授权

US6147364A Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan 失效
标题翻译：化合物半导体器件由含氮镓化合物如甘油，甘氨酸或者甘氨酸形成
公开(公告)号：US6147364A
公开(公告)日：2000-11-14
申请号：US196221
申请日：1998-11-20
申请人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
发明人： Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , Mariko Suzuki , Lisa Sugiura
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01L31/256
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/325 , H01S5/305 , H01S5/32341 , H01S5/343 , H01S5/0422 , H01S5/3063 , H01S5/3201 , H01S5/34333
摘要： A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x) N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.bg1, N is equal to an Mg background level in additive-free Ga.sub.1-x Al.sub.x N.
摘要翻译：基于氮化镓（GaN）的半导体器件包括基板，主要由Mg（Mg）浓度为Nbg1cm-3的GaN组成的单晶层，单晶层设置在基板附近并具有厚度以及主要由Al组分x为至少0.02且不高于1且厚度为d2μm的Ga1-xAlxN组成的半导体层。单晶层位于基板和半导体层之间，并以NMg cm-3的浓度将Mg添加到半导体层。 Al组分x，浓度NMg，浓度Nbg1，厚度d1和厚度d2具有以下关系式1 /（1600xx） Nbg1，N cm-3 = NMg-Nbg1，当NMg = Nbg1时，N等于添加剂Ga1-xAlxN中的Mg背景水平。

90. 发明授权

US6067309A Compound semiconductor light-emitting device of gallium nitride series 失效
标题翻译：氮化镓系复合半导体发光元件
公开(公告)号：US6067309A
公开(公告)日：2000-05-23
申请号：US921693
申请日：1997-09-02
申请人： Masaaki Onomura , Kazuhiko Itaya , Genichi Hatakoshi
发明人： Masaaki Onomura , Kazuhiko Itaya , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/30 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： H01S5/0421 , H01S2301/173 , H01S5/0425 , H01S5/3063 , H01S5/32341
摘要： There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentration, which can easily form a low resistance p-side electrode, and which can uniformly implant carriers to an active layer highly efficiently. A p electrode contact layer having Mg added thereto is used as a p-type semiconductor layer. At least a Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0
摘要翻译：公开了一种具有高可靠性的氮化镓系化合物半导体发光元件，可以通过低阈值电流和低工作电压进行操作而不劣化。该装置包括具有高载流子浓度的p型半导体结构，其可以容易地形成低电阻p侧电极，并且可以高效地均匀地将载流子注入活性层。使用具有Mg的p电极接触层作为p型半导体层。在有源层上形成至少一个Gax2Iny2Alz2N（x2 + y2 + z2 = 1,0，x2，z2，...，0

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