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    • 81. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US06638683B1
    • 2003-10-28
    • US09103544
    • 1998-06-24
    • Shiro TanToshiaki AoaiToru Fujimori
    • Shiro TanToshiaki AoaiToru Fujimori
    • G03C173
    • G03F7/039G03F7/0045Y10S430/106Y10S430/115
    • A positive photoresist composition comprises the combination of (a) Resin A obtained from an alkali-soluble resin containing phenolic hydroxyl groups by replacing from 10 to 80% of the phenolic hydroxyl groups each with a group represented by formula (I) and (b) Resin B obtained from an alkali-soluble resin containing phenolic hydroxyl groups by replacing from 10 to 80% of the phenolic hydroxyl groups each with a group represented by formula (II) or (III) or a nonpolymeric dissolution inhibitive compound which has at least one kind of group selected from tertiary alkyl ester groups and tertiary alkyl carbonate groups; wherein R1, W, n, and R4 are as defined in the specification.
    • 正型光致抗蚀剂组合物包含(a)由含有酚羟基的碱溶性树脂得到的树脂A的组合,通过用式(I)和(b)表示的基团代替10至80%的酚羟基, 通过用式(II)或(III)表示的基团代替10〜80%的酚羟基或由至少一种以上的非聚合物溶解抑制化合物代替的酚醛羟基的碱溶性树脂得到的树脂B 选自叔烷基酯基和叔烷基碳酸酯基的一类基团;其中R 1,W,n和R 4如说明书中所定义。
    • 82. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US06630280B1
    • 2003-10-07
    • US09512664
    • 2000-02-24
    • Toru FujimoriShiro Tan
    • Toru FujimoriShiro Tan
    • G03F700
    • G03F7/0392G03F7/0397Y10S430/106Y10S430/115
    • A positive photoresist composition comprising: (a) a resin having structural units represented by the following formulae (X) and being capable of decomposing by, the action of an acid to increase the solubility in an alkali developer, and (b) a compound capable of generating an acid with irradiation of actinic ray or radiation: wherein R1 and R2, which may be the same or different, each represents a hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, R3 and R4, which may be the same or different, each represents a hydrogen atom or a linear, branched or cyclic alkyl group which may have a substituent, R5 represents a linear, branched or cyclic alkyl group which may have a substituent, an aryl group which may have a substituent or an aralkyl group which may have a substituent, m represents an integer of from 1 to 20, and n represents an integer of from 0 to 5.
    • 一种正型光致抗蚀剂组合物,其包含:(a)具有由下式(X)表示的结构单元的树脂,并且能够通过酸的作用分解以提高在碱性显影剂中的溶解度,和(b)能够 通过光化射线或辐射的照射产生酸:其中可以相同或不同的R 1和R 2各自表示氢原子或具有1至4个碳原子的烷基,R 3和R 4可以是 相同或不同,各自表示氢原子或可具有取代基的直链,支链或环状烷基,R5表示可具有取代基的直链,支链或环状烷基,可具有取代基的芳基或 可以具有取代基的芳烷基,m表示1〜20的整数,n表示0〜5的整数。
    • 83. 发明授权
    • Positive photoresist composition for exposure to far ultraviolet ray
    • 用于暴露于远紫外线的正光致抗蚀剂组合物
    • US06537718B2
    • 2003-03-25
    • US09742368
    • 2000-12-22
    • Fumiyuki NishiyamaToru Fujimori
    • Fumiyuki NishiyamaToru Fujimori
    • G03F7039
    • G03F7/0045G03F7/0048G03F7/039Y10S430/106
    • A positive photoresist composition for exposure to a far ultraviolet ray which comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, (B) a resin which contains a repeating unit corresponding to hydroxystyrene and solubility of which increases in an alkaline developing solution by the action of an acid, and (C) (1) at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether propionate, and (2) at least one solvent selected from the group consisting of propylene glycol monomethyl ether and ethoxyethyl propionate. The positive photoresist composition of the present invention is suitable for exposure to a far ultraviolet ray, particularly a KrF excimer laser beam, is improved in line edge roughness and micro grain, is excellent in uniformity of carting on a substrate and has less particles in its resist solution.
    • 用于暴露于远紫外线的正性光致抗蚀剂组合物,其包含(A)在用光化射线或辐射照射时产生酸的化合物,(B)含有对应于羟基苯乙烯的重复单元的树脂,其溶解度增加 (C)(1)选自丙二醇单甲醚乙酸酯和丙二醇单甲醚丙酸酯中的至少一种溶剂,和(2)至少一种溶剂,其选自: 由丙二醇单甲醚和丙酸乙氧基乙酯组成的组。 本发明的正型光致抗蚀剂组合物适用于暴露于远紫外线,特别是KrF准分子激光束,在线边缘粗糙度和微晶粒方面得到改善,在基材上贴合的均匀性优异,在其中较少的颗粒 抗溶液。
    • 84. 发明授权
    • Positive photosensitive composition
    • 正光敏组合物
    • US06379860B1
    • 2002-04-30
    • US09220682
    • 1998-12-23
    • Toru FujimoriYasunori TakataShiro TanToshiaki Aoai
    • Toru FujimoriYasunori TakataShiro TanToshiaki Aoai
    • G03F7004
    • G03F7/0392G03F7/0397Y10S430/115
    • A positive photosensitive composition is disclosed which comprises a compound generating an acid upon irradiation with actinic rays or a radiation and a resin having groups which decompose by the action of an acid to enhance solubility in an alkaline developing solution, said resin being obtained by reacting an alkali-soluble resin having phenolic hydroxyl groups with at least one specific enol ether compound under acid conditions in a specific organic solvent. The positive photosensitive composition shows improved discrimination between nonimage areas and image areas, has high sensitivity, high resolving power, and high heat resistance, suffers little change in performance with the lapse of time from exposure to light to heat treatment (PED), and is free from defects, e.g., development defects.
    • 公开了一种正型感光性组合物,其包含在用光化射线照射时产生酸的化合物或辐射,以及具有通过酸作用分解的基团的树脂,以增强在碱性显影液中的溶解度,所述树脂是通过使 具有酚羟基的碱溶性树脂与至少一种特定的烯醇醚化合物在酸性条件下在特定的有机溶剂中。 正型感光性组合物显示出非图像区域和图像区域之间的区分改善,具有高灵敏度,高分辨率和高耐热性,随着从曝光到热处理(PED)的时间的流逝,性能几乎没有变化,并且是 没有缺陷,例如发展缺陷。
    • 86. 发明授权
    • Chemically amplified positive resist composition
    • 化学放大正光刻胶组合物
    • US5939234A
    • 1999-08-17
    • US655233
    • 1996-06-05
    • Tsukasa YamanakaToshiaki AoaiToru Fujimori
    • Tsukasa YamanakaToshiaki AoaiToru Fujimori
    • G03F7/004G03F7/039H01L21/027
    • G03F7/0045Y10S430/106Y10S430/111Y10S430/121
    • Disclosed is a chemically amplified positive resist composition which comprises (A) a compound which contains at least one group selected among tert-alkyl ester groups and tert-alkyl carbonate groups and is capable of increasing solubility of the compound in an alkali aqueous solution by the action of an acid, (B) a compound which contains at least one group selected among acetal groups and silyl ether groups and is capable of increasing solubility of the compound in an alkali aqueous solution by the action of an acid, (C) a compound which is capable of generating an acid by irradiation with an active ray or radiation, and (D) an organic basic compound. The resist composition has high resolving power and forms a satisfactory pattern free from undergoing sensitivity decrease, T-top formation, and change in line width which are caused from exposure to post exposure bake.
    • 公开了一种化学放大型正性抗蚀剂组合物,其包含(A)含有至少一个选自叔烷基酯基和碳酸叔烷基酯基的基团的化合物,并且能够增加化合物在碱性水溶液中的溶解度 酸的作用,(B)含有至少一个选自缩醛基团和甲硅烷基醚基团的基团并且能够通过酸的作用增加化合物在碱性水溶液中的溶解度的化合物,(C)化合物 其能够通过用活性射线或辐射照射产生酸,和(D)有机碱性化合物。 抗蚀剂组合物具有高分辨能力,并且形成了不受曝光曝光烘烤引起的敏感性降低,T顶形成和线宽变化的令人满意的图案。