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81. 发明申请

US20120319219A1 EPITAXIAL SILICON CMOS-MEMS MICROPHONES AND METHOD FOR MANUFACTURING 有权
标题翻译：外延硅CMOS-MEMS麦克风及其制造方法
公开(公告)号：US20120319219A1
公开(公告)日：2012-12-20
申请号：US13161194
申请日：2011-06-15
申请人： Brett M. Diamond , Franz Laermer , Andrew J. Doller , Michael J. Daley , Phillip Sean Stetson , John M. Muza
发明人： Brett M. Diamond , Franz Laermer , Andrew J. Doller , Michael J. Daley , Phillip Sean Stetson , John M. Muza
IPC分类号： H01L21/20 , H01L29/84
CPC分类号： H04R19/005 , B81B2201/0257 , B81B2203/0127 , B81C1/00158 , B81C2201/0119 , B81C2201/0177 , B81C2203/0714 , B81C2203/075 , B81C2203/0778 , H04R19/04 , H04R31/00
摘要： A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer is epitaxially deposited on the wafer surface. Portions of the hybrid silicon layer that contact the poly-crystalline silicon use the poly-crystalline silicon as a seed material and portions that contact the mono-crystalline silicon use the mono-crystalline silicon as a seed material. As such, the hybrid silicon layer includes both mono-crystalline silicon and poly-crystalline silicon in the same layer of the same wafer structure. A CMOS/membrane layer is then deposited on top of the hybrid silicon layer.
摘要翻译：使用外延生长硅制造麦克风的方法。提供了一种单片晶圆结构。该结构的晶片表面包括第一水平区域中的多晶硅和围绕第一水平区域的周边的第二水平区域中的单晶硅。杂化硅层外延沉积在晶片表面上。接触多晶硅的混合硅层的部分使用多晶硅作为种子材料，并且接触单晶硅的部分使用单晶硅作为种子材料。这样，混合硅层在同一晶片结构的相同层中包括单晶硅和多晶硅两者。然后将CMOS /膜层沉积在混合硅层的顶部。

82. 发明申请

US20120132925A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE, AND A CORRESPONDING SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：制造半导体结构的方法和相应的半导体结构
公开(公告)号：US20120132925A1
公开(公告)日：2012-05-31
申请号：US13366067
申请日：2012-02-03
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L29/24
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following steps: a crystalline semiconductor substrate (1) is supplied; a porous region (10) is provided adjacent to a surface (OF) of the semiconductor substrate (1); a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10′) of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate (1). A corresponding semiconductor structure is likewise provided.
摘要翻译：提供一种制造半导体结构的方法，包括以下步骤：提供晶体半导体衬底（1）; 邻近半导体衬底（1）的表面（OF）设置多孔区域（10）; 从表面（OF）将掺杂剂（12）引入多孔区域（10）中; 并且多孔区域（10）被热再结晶成半导体衬底（1）的结晶掺杂区域（10'），其掺杂类型和/或掺杂浓度和/或掺杂分布与半导体衬底基板（1）。同样提供相应的半导体结构。

83. 发明申请

US20120091544A1 COMPONENT HAVING A MICROMECHANICAL MICROPHONE STRUCTURE, AND METHOD FOR ITS PRODUCTION 有权
标题翻译：具有微机电麦克风结构的组分及其生产方法
公开(公告)号：US20120091544A1
公开(公告)日：2012-04-19
申请号：US13259570
申请日：2010-04-07
申请人： Frank Reichenbach , Thomas Buck , Jochen Zoellin , Franz Laermer , Ulrike Scholz , Kathrin van Teeffelen , Christina Leinenbach
发明人： Frank Reichenbach , Thomas Buck , Jochen Zoellin , Franz Laermer , Ulrike Scholz , Kathrin van Teeffelen , Christina Leinenbach
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H04R19/005 , Y10T428/31663
摘要： A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer. This allows a foil to be applied on the layer configuration of the microphone structures exposed in the wafer composite, which makes it possible to dice up the components in a standard sawing process.
摘要翻译：提供具有坚固但声学敏感的麦克风结构的部件，并且是用于其生产的简单且成本有效的方法。这种麦克风结构包括一个声学活动的隔膜，它起着麦克风电容器的可偏转电极的作用，一个固定的，声学可渗透的计数元件，起着麦克风电容器的对电极的作用，以及用于检测和分析麦克风的电容变化的装置电容器。膜片在元件的半导体衬底上方的隔膜层中实现，并覆盖衬底后部的声音开口。计数元件在膜片上方的另一层中显影。该另一层通常跨越整个组件表面延伸并补偿水平差，使得根据该附加层，整个组件表面大部分是平面的。这允许将箔施加在暴露在晶片复合材料中的麦克风结构的层结构上，这使得可以在标准锯切工艺中引导部件。

84. 发明申请

US20110281102A1 METHOD FOR MANUFACTURING POROUS MICROSTRUCTURES, POROUS MICROSTRUCTURES MANUFACTURED ACCORDING TO THIS METHOD, AND THE USE THEREOF 失效
标题翻译：用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其使用
公开(公告)号：US20110281102A1
公开(公告)日：2011-11-17
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
IPC分类号： B32B3/26 , C23F1/04
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译：一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。

85. 发明授权

US07872333B2 Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method 有权
标题翻译：包括硅层和钝化层的层系统，在硅层上制造钝化层的方法以及所述系统和方法的使用
公开(公告)号：US07872333B2
公开(公告)日：2011-01-18
申请号：US10524610
申请日：2003-05-06
申请人： Franz Laermer , Lutz Mueller , Winfried Bernhard
发明人： Franz Laermer , Lutz Mueller , Winfried Bernhard
IPC分类号： H01L23/58 , H01L21/70 , H01L29/06
CPC分类号： H01L21/02252 , B81B2203/033 , B81C1/00571 , B81C2201/016 , H01L21/02123 , H01L21/02238 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3121 , H01L21/31612 , Y10S438/958
摘要： A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.
摘要翻译：描述了一种层系统，其包括至少区域地施加到硅层表面的硅层和钝化层，钝化层具有第一至少大部分无机部分层和第二部分层，第二部分层被制成包含硅或含有这种材料的有机化合物。特别地，第二部分层以“自组装单层”的形式构成。此外，描述了一种在硅层上形成钝化层的方法，在硅层上形成第一无机部分层，以及至少在第一部分层上的某些区域中产生含有包含硅或由其制成的有机化合物的第二部分层。两个部分层形成钝化层。所描述的层系统或所描述的方法特别适用于在硅中产生自支撑结构。

86. 发明授权

US07785486B2 Method of etching structures into an etching body using a plasma 有权
标题翻译：使用等离子体将结构刻蚀成蚀刻体的方法
公开(公告)号：US07785486B2
公开(公告)日：2010-08-31
申请号：US10676295
申请日：2003-09-30
申请人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt , Volker Becker
发明人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt , Volker Becker
IPC分类号： G01L21/30 , B44C1/22 , C23F1/00
CPC分类号： B81C1/00579 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/3065
摘要： Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.
摘要翻译：描述了使用等离子体将结构蚀刻到蚀刻体中，特别是通过蚀刻掩模以精确方式侧向限定的硅体中的凹陷的方法的附加变型。另外，描述了将介电层或电介质基体和硅层中的结构（特别是具有高纵横比的沟槽）引入到这种方法中，各向同性的不均匀和/或各向同性，在由硅制成的层的情况下在至少一些区域中制造结构之后进行层蚀刻，特别是使用氟基或高度氧化性的氟化合物如ClF 3。

87. 发明申请

US20100035068A1 Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type 失效
标题翻译：具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底
公开(公告)号：US20100035068A1
公开(公告)日：2010-02-11
申请号：US12308200
申请日：2007-04-27
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： C25D5/00 , B32B17/06 , H01L21/30
CPC分类号： H01L21/02008 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/02601 , H01L21/02612 , H01L21/02656 , H01L21/02658 , H01L21/02667 , H01L33/346
摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要翻译：一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔，要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

88. 发明申请

US20100009077A1 Method for Treating a Material Having Nanoscale Pores 审中-公开
标题翻译：用于处理具有纳米级孔的材料的方法
公开(公告)号：US20100009077A1
公开(公告)日：2010-01-14
申请号：US12225504
申请日：2007-02-12
申请人： Franz Laermer , Michael Stumber , Ralf Reichenbach , Dick Scholten , Christian Maeurer
发明人： Franz Laermer , Michael Stumber , Ralf Reichenbach , Dick Scholten , Christian Maeurer
IPC分类号： B05D7/22 , B05C9/08
CPC分类号： B08B7/0021
摘要： A method and a device for treating a material having nanoscale pores), especially implant material for the treatment of living cells, as provided. The method distinguished in that the surface tension of a substance (10) provided for filling the volumes of the nanoscale pores (9) is reduced. The present invention also includes a device for carrying out this method.
摘要翻译：一种用于处理具有纳米尺度孔的材料的方法和装置），特别是用于治疗活细胞的植入材料。该方法的特征在于减少了用于填充纳米级孔（9）的体积的物质（10）的表面张力。本发明还包括用于执行该方法的装置。

89. 发明申请

US20090278214A1 Microelectromechanical Systems Encapsulation Process 有权
标题翻译：微机电系统封装工艺
公开(公告)号：US20090278214A1
公开(公告)日：2009-11-12
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L29/84
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

90. 发明申请

US20080167601A1 Microneedles to be placed in the skin for the transdermal application of pharhmaceuticals 有权
标题翻译：将微针放置在皮肤中以透皮施用药物
公开(公告)号：US20080167601A1
公开(公告)日：2008-07-10
申请号：US11897299
申请日：2007-08-29
申请人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
发明人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
IPC分类号： A61B17/20 , B81C1/00
CPC分类号： A61B17/205 , A61B2090/037 , A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053
摘要： An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.
摘要翻译：用于放置在人或动物患者的皮肤上的阵列，用于透皮施用具有位于载体基底上的微针的药物，毒素或活性剂的目的，微针在该区域中具有预设的断点过渡到载体基底。

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