专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20090061626A1 Method of manunfacturing semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20090061626A1
公开(公告)日：2009-03-05
申请号：US12289271
申请日：2008-10-23
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/768
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译：公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

82. 发明授权

US07494931B2 Method for fabricating semiconductor device and polishing method 有权
标题翻译：制造半导体器件的方法和抛光方法
公开(公告)号：US07494931B2
公开(公告)日：2009-02-24
申请号：US11526671
申请日：2006-09-26
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
IPC分类号： H01L21/302
CPC分类号： C23F3/00 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad.
摘要翻译：一种半导体器件的制造方法，其特征在于，在基板的表面的上方形成铜膜，在研磨垫上形成含有铜的材料，所述铜不能从所述铜膜得到，并且在形成含铜材料之后在所述抛光垫上，利用所述抛光垫对所述铜膜进行抛光。

83. 发明申请

US20080216415A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 失效
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20080216415A1
公开(公告)日：2008-09-11
申请号：US11967584
申请日：2007-12-31
申请人： Nobuyuki KURASHIMA , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki KURASHIMA , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： C09K3/14 , H01L21/302
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，和四甲基氢氧化铵。另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

84. 发明申请

US20080045016A1 CLEANING COMPOSITION, CLEANING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁组合物，清洁方法和半导体器件的制造方法
公开(公告)号：US20080045016A1
公开(公告)日：2008-02-21
申请号：US11833534
申请日：2007-08-03
申请人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/461 , C11D3/37
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).
摘要翻译：清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。

85. 发明申请

US20070293049A1 Slurry for CMP of Cu film, polishing method and method for manufacturing semiconductor device 审中-公开
标题翻译：用于CMP膜的浆料，用于制造半导体器件的抛光方法和方法
公开(公告)号：US20070293049A1
公开(公告)日：2007-12-20
申请号：US11812185
申请日：2007-06-15
申请人： Gaku Minamihaba , Dai Fukushima , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Hiroyuki Yano
IPC分类号： H01L21/461 , H01L21/302 , C03C15/00
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A slurry for CMP of Cu film is provided, which includes water, peroxosulfuric acid or a salt thereof, basic amino acid, a complexing agent which forms a water-insoluble metal complex, a surfactant, and colloidal silica having a primary diameter ranging from 5 to 50 nm. The basic amino acid is included at a content of 0.05 to 0.5 wt %.
摘要翻译：提供了一种用于CMP膜的浆料，其包括水，过氧硫酸或其盐，碱性氨基酸，形成水不溶性金属络合物的络合剂，表面活性剂和主要直径为5 至50nm。碱性氨基酸的含量为0.05〜0.5重量％。

86. 发明申请

US20070293047A1 Polishing method and method for fabricating semiconductor device 有权
标题翻译：抛光方法及制造半导体器件的方法
公开(公告)号：US20070293047A1
公开(公告)日：2007-12-20
申请号：US11802532
申请日：2007-05-23
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/04 , B24B57/02 , H01L21/02074 , H01L21/31053
摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.
摘要翻译：抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体的相对于抛光垫的表面的倾斜方向。

87. 发明申请

US20070190770A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 失效
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20070190770A1
公开(公告)日：2007-08-16
申请号：US11552200
申请日：2006-10-24
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂基团和四甲基氢氧化铵。树脂颗粒以0.01至1重量％的浓度掺入。处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

88. 发明授权

US07144804B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07144804B2
公开(公告)日：2006-12-05
申请号：US11022644
申请日：2004-12-28
申请人： Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.
摘要翻译：一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。第二绝缘膜的底部以多个点埋在第一绝缘膜中。

89. 发明授权

US06995090B2 Polishing slurry for use in CMP of SiC series compound, polishing method, and method of manufacturing semiconductor device 失效
标题翻译：用于SiC系列化合物CMP的研磨浆料，研磨方法以及半导体装置的制造方法
公开(公告)号：US06995090B2
公开(公告)日：2006-02-07
申请号：US10326407
申请日：2002-12-23
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053 , H01L21/76834 , H01L21/7684
摘要： A polishing slurry for CMP of an SiC series compound film, includes colloidal silica having a primary particle diameter ranging from 5 nm to 30 nm, and at least one acid selected from the group consisting of an amino acid having a benzene ring and an organic acid having a heterocycle.
摘要翻译： SiC系复合膜的CMP用抛光浆料，包括一次粒径为5nm〜30nm的胶体二氧化硅，以及选自具有苯环和有机酸的氨基酸中的至少一种酸具有杂环。

90. 发明授权

US06984582B2 Method of making semiconductor device by polishing with intermediate clean polishing 有权
标题翻译：通过中间清洁抛光抛光制造半导体器件的方法
公开(公告)号：US06984582B2
公开(公告)日：2006-01-10
申请号：US10730902
申请日：2003-12-10
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Yoshikuni Tateyama
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Yoshikuni Tateyama
IPC分类号： H01L21/44
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.
摘要翻译：抛光方法包括：将抛光液供给待研磨的膜的上部，进行第一次抛光，在第一次抛光之后，将膜设置在具有预定图案的槽以便填充的层上，在向其中提供蒸馏水和清洁液之一的同时，对薄膜进行抛光以进行清洁抛光，并且在清洁抛光之后，通过提供抛光液来研磨残留在凹槽外侧的膜的剩余部分，以进行第二次抛光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式